JP4678875B2 - 低ゲート誘導ドレイン漏れ(gidl)電流を有するmosfetデバイス - Google Patents
低ゲート誘導ドレイン漏れ(gidl)電流を有するmosfetデバイス Download PDFInfo
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Description
Claims (10)
- 低ゲート誘導ドレイン漏れ(GIDL)電流を有するMOSFETデバイスであって、
ソース拡散領域と、ドレイン拡散領域と、中央ゲートと、
を含み、前記中央ゲートが、中央ゲート導体と、左側方ウイング・ゲート導体と、右側方ウイング・ゲート導体とを含み、前記左側方ウイング・ゲート導体および前記右側方ウイング・ゲート導体の各々が、薄い絶縁性の拡散バリア層によって、前記中央ゲート導体から分離しており、
前記中央ゲート導体ならびに前記左および右側方ウイング・ゲート導体が、前記左および右側方ウイング・ゲート導体の上にあり、かつ、前記中央ゲート導体の左および右の側壁に沿って導電性バリア層を介して形成された左および右金属側壁導電性層によって結びつけられており、前記左および右側方ウイング・ゲート導体の左右の横方向の縁部が、前記ソース拡散領域および前記ドレイン拡散領域の一方に重なり、
前記左および右側方ウイング・ゲート導体の下のゲート絶縁体の厚さが、前記中央ゲート導体の下のゲート絶縁体の厚さよりも厚く、
前記MOSFETデバイスはNMOSFETデバイスであり、前記中央ゲート導体がP+ポリシリコンで形成されており、前記左側方ウイング・ゲート導体および前記右側方ウイング・ゲート導体がN+ポリシリコンで形成されている、前記MOSFETデバイス。 - 低ゲート誘導ドレイン漏れ(GIDL)電流を有するMOSFETデバイスであって、
ソース拡散領域と、ドレイン拡散領域と、中央ゲートと、
を含み、前記中央ゲートが、中央ゲート導体と、左側方ウイング・ゲート導体と、右側方ウイング・ゲート導体とを含み、前記左側方ウイング・ゲート導体および前記右側方ウイング・ゲート導体の各々が、薄い絶縁性の拡散バリア層によって、前記中央ゲート導体から分離しており、
前記中央ゲート導体ならびに前記左および右側方ウイング・ゲート導体が、前記左および右側方ウイング・ゲート導体の上にあり、かつ、前記中央ゲート導体の左および右の側壁に沿って導電性バリア層を介して形成された左および右金属側壁導電性層によって結びつけられており、前記左および右側方ウイング・ゲート導体の左右の横方向の縁部が、前記ソース拡散領域および前記ドレイン拡散領域の一方に重なり、
前記左および右側方ウイング・ゲート導体の下のゲート絶縁体の厚さが、前記中央ゲート導体の下のゲート絶縁体の厚さよりも厚く、
前記MOSFETデバイスはNMOSFETデバイスであり、前記中央ゲート導体がN+ポリシリコンで形成されており、前記左側方ウイング・ゲート導体および前記右側方ウイング・ゲート導体がN+ポリシリコンで形成されている、前記MOSFETデバイス。 - 低ゲート誘導ドレイン漏れ(GIDL)電流を有するMOSFETデバイスであって、
ソース拡散領域と、ドレイン拡散領域と、中央ゲートと、
を含み、前記中央ゲートが、中央ゲート導体と、左側方ウイング・ゲート導体と、右側方ウイング・ゲート導体とを含み、前記左側方ウイング・ゲート導体および前記右側方ウイング・ゲート導体の各々が、薄い絶縁性の拡散バリア層によって、前記中央ゲート導体から分離しており、
前記中央ゲート導体ならびに前記左および右側方ウイング・ゲート導体が、前記左および右側方ウイング・ゲート導体の上にあり、かつ、前記中央ゲート導体の左および右の側壁に沿って導電性バリア層を介して形成された左および右金属側壁導電性層によって結びつけられており、前記左および右側方ウイング・ゲート導体の左右の横方向の縁部が、前記ソース拡散領域および前記ドレイン拡散領域の一方に重なり、
前記左および右側方ウイング・ゲート導体の下のゲート絶縁体の厚さが、前記中央ゲート導体の下のゲート絶縁体の厚さよりも厚く、
前記MOSFETデバイスはPMOSFETデバイスであり、前記中央ゲート導体がN+ポリシリコンで形成されており、前記左側方ウイング・ゲート導体および前記右側方ウイング・ゲート導体がP+ポリシリコンで形成されている、前記MOSFETデバイス。 - 低ゲート誘導ドレイン漏れ(GIDL)電流を有するMOSFETデバイスであって、
ソース拡散領域と、ドレイン拡散領域と、中央ゲートと、
を含み、前記中央ゲートが、中央ゲート導体と、左側方ウイング・ゲート導体と、右側方ウイング・ゲート導体とを含み、前記左側方ウイング・ゲート導体および前記右側方ウイング・ゲート導体の各々が、薄い絶縁性の拡散バリア層によって、前記中央ゲート導体から分離しており、
前記中央ゲート導体ならびに前記左および右側方ウイング・ゲート導体が、前記左および右側方ウイング・ゲート導体の上にあり、かつ、前記中央ゲート導体の左および右の側壁に沿って導電性バリア層を介して形成された左および右金属側壁導電性層によって結びつけられており、前記左および右側方ウイング・ゲート導体の左右の横方向の縁部が、前記ソース拡散領域および前記ドレイン拡散領域の一方に重なり、
前記左および右側方ウイング・ゲート導体の下のゲート絶縁体の厚さが、前記中央ゲート導体の下のゲート絶縁体の厚さよりも厚く、
前記MOSFETデバイスはPMOSFETデバイスであり、前記中央ゲート導体がP+ポリシリコンで形成されており、前記左側方ウイング・ゲート導体および前記右側方ウイング・ゲート導体がP+ポリシリコンで形成されている、前記MOSFETデバイス。 - 前記中央ゲート導体の左右の横方向の縁部が、前記ソース拡散領域および前記ドレイン拡散領域の一方に重なる、請求項1〜4のいずれか一項に記載のMOSFETデバイス。
- 前記左および右金属側壁導電性層が、前記中央ゲート導体と前記左および右側方ウイング・ゲート導体との間に整流接合が形成されるのを防ぐ、請求項1〜4のいずれか一項に記載のMOSFETデバイス。
- 前記MOSFETデバイスが高Vt(閾値電圧)NMOSFETである、請求項1に記載のMOSFETデバイス。
- 前記MOSFETデバイスが低Vt(閾値電圧)NMOSFETである、請求項2に記載のMOSFETデバイス。
- 前記MOSFETデバイスが高Vt(閾値電圧)PMOSFETである、請求項3に記載のMOSFETデバイス。
- 前記MOSFETデバイスが低Vt(閾値電圧)PMOSFETである、請求項4に記載のMOSFETデバイス。
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US10/345,472 US6841826B2 (en) | 2003-01-15 | 2003-01-15 | Low-GIDL MOSFET structure and method for fabrication |
PCT/US2004/000968 WO2004066367A2 (en) | 2003-01-15 | 2004-01-15 | Low-gidl mosfet structure and method for fabrication |
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JP (1) | JP4678875B2 (ja) |
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DE10336876B4 (de) * | 2003-08-11 | 2006-08-24 | Infineon Technologies Ag | Speicherzelle mit Nanokristallen oder Nanodots und Verfahren zu deren Herstellung |
KR100602122B1 (ko) * | 2004-12-03 | 2006-07-19 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조방법 |
US8154088B1 (en) | 2006-09-29 | 2012-04-10 | Cypress Semiconductor Corporation | Semiconductor topography and method for reducing gate induced drain leakage (GIDL) in MOS transistors |
JP5559567B2 (ja) * | 2010-02-24 | 2014-07-23 | パナソニック株式会社 | 半導体装置 |
CN102194870B (zh) * | 2010-03-17 | 2012-08-29 | 中国科学院微电子研究所 | 一种半导体器件及其制造方法 |
US8592911B2 (en) * | 2010-03-17 | 2013-11-26 | Institute of Microelectronics, Chinese Academy of Sciences | Asymmetric semiconductor device having a high-k/metal gate and method of manufacturing the same |
CN102544098B (zh) * | 2010-12-31 | 2014-10-01 | 中国科学院微电子研究所 | Mos晶体管及其形成方法 |
US8743628B2 (en) | 2011-08-08 | 2014-06-03 | Micron Technology, Inc. | Line driver circuits, methods, and apparatuses |
CN102263133B (zh) * | 2011-08-22 | 2012-11-07 | 无锡新洁能功率半导体有限公司 | 低栅极电荷低导通电阻深沟槽功率mosfet器件及其制造方法 |
CN102446771A (zh) * | 2011-11-11 | 2012-05-09 | 上海华力微电子有限公司 | 一种减小mos io器件gidl效应的方法 |
US8501566B1 (en) * | 2012-09-11 | 2013-08-06 | Nanya Technology Corp. | Method for fabricating a recessed channel access transistor device |
US8896035B2 (en) | 2012-10-22 | 2014-11-25 | International Business Machines Corporation | Field effect transistor having phase transition material incorporated into one or more components for reduced leakage current |
US9685526B2 (en) * | 2014-02-12 | 2017-06-20 | International Business Machines Corporation | Side gate assist in metal gate first process |
CN104900504B (zh) * | 2015-05-25 | 2018-02-06 | 上海华虹宏力半导体制造有限公司 | 降低mos晶体管gidl电流的方法 |
FR3090999B1 (fr) * | 2018-12-20 | 2022-01-14 | Commissariat Energie Atomique | Procédé de fabrication d'un composant semiconducteur à base d'un composé III-N |
CN112663541B (zh) * | 2020-12-22 | 2022-10-21 | 浙江交工集团股份有限公司 | 中央分隔带生态预制装配式护栏安装施工方法 |
CN116313807B (zh) * | 2023-02-28 | 2024-05-28 | 上海维安半导体有限公司 | 一种双层侧墙结构的超结功率mosfet器件的制备方法及超结功率mosfet器件 |
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Publication number | Publication date |
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KR100754305B1 (ko) | 2007-09-03 |
ATE551727T1 (de) | 2012-04-15 |
TWI270145B (en) | 2007-01-01 |
EP1588403A2 (en) | 2005-10-26 |
TW200504887A (en) | 2005-02-01 |
US20040248356A1 (en) | 2004-12-09 |
US6841826B2 (en) | 2005-01-11 |
US20040137689A1 (en) | 2004-07-15 |
KR20050091003A (ko) | 2005-09-14 |
US6878582B2 (en) | 2005-04-12 |
EP1588403A4 (en) | 2010-03-24 |
CN101410951A (zh) | 2009-04-15 |
JP2007524984A (ja) | 2007-08-30 |
WO2004066367A2 (en) | 2004-08-05 |
EP1588403B1 (en) | 2012-03-28 |
CN101410951B (zh) | 2010-05-05 |
WO2004066367A3 (en) | 2009-05-28 |
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