JP4677311B2 - Mos型固体撮像装置及びその製造方法 - Google Patents
Mos型固体撮像装置及びその製造方法 Download PDFInfo
- Publication number
- JP4677311B2 JP4677311B2 JP2005267236A JP2005267236A JP4677311B2 JP 4677311 B2 JP4677311 B2 JP 4677311B2 JP 2005267236 A JP2005267236 A JP 2005267236A JP 2005267236 A JP2005267236 A JP 2005267236A JP 4677311 B2 JP4677311 B2 JP 4677311B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- imaging device
- state imaging
- type solid
- mos type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 40
- 239000010408 film Substances 0.000 description 38
- 238000010586 diagram Methods 0.000 description 12
- 239000010949 copper Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
電源端子44aに接続する電源線
出力端子46aに接続する出力信号線
リセット端子45aに接続するリセット制御線
行選択端子47aに接続する行選択制御線
行読出端子48aに接続する行読出制御線
の計5本が必要となる。
31 半導体基板
32 受光面
33 単位画素
33a フォトダイオード
33b N+領域
41 水平方向(X方向)のグローバル配線
41a リセット制御線
41b 行選択制御線
41c 行読出制御線
42 垂直方向(Y方向)のグローバル配線
42a 出力信号線
42b 電源線
50 単位画素
51 遮光膜
51a 矩形
52 ソース,ドレイン
54 酸化膜
54a 素子分離領域
60 カラーフィルタ層
61 マイクロレンズ
Claims (7)
- 受光面に複数の光電変換素子がアレイ状に形成された半導体基板の上に該受光面に渡る複数層の配線が絶縁層を介して積層されるMOS型固体撮像装置において、上層の前記配線に比べて下層の前記配線の線幅を広く且つ厚さを薄くしたことを特徴とするMOS型固体撮像装置。
- 前記上層の配線を長手方向に対して直角方向に切断した断面形状を、前記半導体基板の上方向を縦方向としたとき縦長形状に形成したことを特徴とする請求項1に記載のMOS型固体撮像装置。
- 前記各光電変換素子に付設形成された信号読出回路に接続される前記配線のうち該信号読出回路を構成するMOSトランジスタのゲートに接続される配線を前記下層の配線とし、前記MOSトランジスタのソースまたはドレインに接続される配線を前記上層の配線としたことを特徴とする請求項1または請求項2に記載のMOS型固体撮像装置。
- 前記上層の配線の単位長さ当たりの比抵抗が、前記下層の配線の単位長さ当たりの比抵抗よりも低いことを特徴とする請求項1乃至請求項3のいずれかに記載のMOS型固体撮像装置。
- 前記上層の配線の材料がAl又はAlを含む化合物であることを特徴とする請求項1乃至請求項4のいずれかに記載のMOS型固体撮像装置。
- 前記下層の配線の材料がCu又はCuを含む化合物であることを特徴とする請求項1乃至請求項5のいずれかに記載のMOS型固体撮像装置。
- 請求項1乃至請求項6のいずれかに記載のMOS型固体撮像装置の製造方法において、前記下層の配線を形成した後にCMP法によって該下層の配線の表面を平坦化しその後に前記上層の配線を形成することを特徴とするMOS型固体撮像装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005267236A JP4677311B2 (ja) | 2005-09-14 | 2005-09-14 | Mos型固体撮像装置及びその製造方法 |
US11/515,008 US7863659B2 (en) | 2005-09-14 | 2006-09-05 | MOS type solid-state image pickup apparatus with wiring layers of different line-width and thickness |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005267236A JP4677311B2 (ja) | 2005-09-14 | 2005-09-14 | Mos型固体撮像装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007081142A JP2007081142A (ja) | 2007-03-29 |
JP4677311B2 true JP4677311B2 (ja) | 2011-04-27 |
Family
ID=37910401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005267236A Expired - Fee Related JP4677311B2 (ja) | 2005-09-14 | 2005-09-14 | Mos型固体撮像装置及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7863659B2 (ja) |
JP (1) | JP4677311B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1930950B1 (en) * | 2006-12-08 | 2012-11-07 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
JP5059476B2 (ja) * | 2007-04-23 | 2012-10-24 | ラピスセミコンダクタ株式会社 | 半導体装置、光測定装置、光検出装置、及び半導体装置の製造方法 |
JP2009218382A (ja) * | 2008-03-11 | 2009-09-24 | Sony Corp | 固体撮像装置、その製造方法および撮像装置 |
KR101776955B1 (ko) | 2009-02-10 | 2017-09-08 | 소니 주식회사 | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
JP2011135100A (ja) * | 2011-03-22 | 2011-07-07 | Sony Corp | 固体撮像装置及び電子機器 |
JP5963642B2 (ja) * | 2012-10-29 | 2016-08-03 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
US10069023B2 (en) * | 2013-01-18 | 2018-09-04 | Texas Instruments Incorporated | Optical sensor with integrated pinhole |
JP2015065270A (ja) * | 2013-09-25 | 2015-04-09 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
JP2015099862A (ja) * | 2013-11-19 | 2015-05-28 | 株式会社東芝 | 固体撮像装置および固体撮像装置の製造方法 |
JP6549366B2 (ja) | 2014-09-19 | 2019-07-24 | 株式会社リコー | 光電変換素子、画像読取装置及び画像形成装置 |
US9991303B2 (en) * | 2015-03-16 | 2018-06-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device structure |
CN106601759B (zh) * | 2015-10-16 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
CN117855239B (zh) * | 2024-03-06 | 2024-05-10 | 武汉楚兴技术有限公司 | 光电转换结构、像素单元及其制备方法、图像传感器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1093067A (ja) * | 1996-09-17 | 1998-04-10 | Toshiba Corp | 増幅型固体撮像装置 |
JP2001015725A (ja) * | 1999-06-30 | 2001-01-19 | Nec Corp | 固体撮像装置 |
JP2003264281A (ja) * | 2002-03-11 | 2003-09-19 | Sony Corp | 固体撮像素子及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3664939B2 (ja) | 2000-04-14 | 2005-06-29 | 富士通株式会社 | Cmosイメージセンサ及びその製造方法 |
US7474002B2 (en) * | 2001-10-30 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having dielectric film having aperture portion |
JP2004104203A (ja) * | 2002-09-05 | 2004-04-02 | Toshiba Corp | 固体撮像装置 |
JP2004111867A (ja) * | 2002-09-20 | 2004-04-08 | Canon Inc | 固体撮像素子 |
JP3641260B2 (ja) * | 2002-09-26 | 2005-04-20 | 株式会社東芝 | 固体撮像装置 |
JP4117540B2 (ja) * | 2002-10-17 | 2008-07-16 | ソニー株式会社 | 固体撮像素子の制御方法 |
JP4401066B2 (ja) * | 2002-11-19 | 2010-01-20 | 三洋電機株式会社 | 半導体集積装置及びその製造方法 |
TWI228793B (en) * | 2003-04-28 | 2005-03-01 | Fujitsu Ltd | Semiconductor device and manufacturing method thereof |
JP2005005573A (ja) * | 2003-06-13 | 2005-01-06 | Fujitsu Ltd | 撮像装置 |
US7453109B2 (en) * | 2004-09-03 | 2008-11-18 | Canon Kabushiki Kaisha | Solid-state image sensor and imaging system |
-
2005
- 2005-09-14 JP JP2005267236A patent/JP4677311B2/ja not_active Expired - Fee Related
-
2006
- 2006-09-05 US US11/515,008 patent/US7863659B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1093067A (ja) * | 1996-09-17 | 1998-04-10 | Toshiba Corp | 増幅型固体撮像装置 |
JP2001015725A (ja) * | 1999-06-30 | 2001-01-19 | Nec Corp | 固体撮像装置 |
JP2003264281A (ja) * | 2002-03-11 | 2003-09-19 | Sony Corp | 固体撮像素子及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070080419A1 (en) | 2007-04-12 |
US7863659B2 (en) | 2011-01-04 |
JP2007081142A (ja) | 2007-03-29 |
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