JP4658102B2 - 磁気的に軟らかい基準層を有する磁気抵抗素子のための読出し方法 - Google Patents
磁気的に軟らかい基準層を有する磁気抵抗素子のための読出し方法 Download PDFInfo
- Publication number
- JP4658102B2 JP4658102B2 JP2007233234A JP2007233234A JP4658102B2 JP 4658102 B2 JP4658102 B2 JP 4658102B2 JP 2007233234 A JP2007233234 A JP 2007233234A JP 2007233234 A JP2007233234 A JP 2007233234A JP 4658102 B2 JP4658102 B2 JP 4658102B2
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- Japan
- Prior art keywords
- layer
- line
- read
- tunnel junction
- bit line
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Description
11 磁気トンネル接合、
12 データ層、
14 基準層、
16 絶縁性トンネル障壁、
312 センス増幅器、
316 比較器。
Claims (3)
- データ層および基準層を含む磁気トンネル接合を有する磁気抵抗素子の読出し方法であって、
前記基準層と接触するビット線の一端から当該ビット線の他端に読出し電流を供給し、前記基準層の磁化を既知の向きに一時的に設定する段階と、
前記データ層と接触するワード線と前記ビット線の他端との間に、前記磁気トンネル接合を介して電圧を印加し、前記磁気トンネル接合にセンス電流を流す段階と、
前記読出し電流と前記センス電流との和から前記磁気トンネル接合の抵抗を判定する段階と、
を有することを特徴とする読出し方法。 - 前記センス電流は、前記磁気トンネル接合に両極性パルスを印加することによって流れることを特徴とする請求項1に記載の読出し方法。
- 前記磁気トンネル接合の抵抗を判定することは、前記抵抗の状態の移行をセンシングすることを含み、
前記抵抗状態の移行のセンシングは、
前記センス電流を電圧信号に変換する段階と、
前記電圧信号を遅延させる段階と、
遅延していない電圧信号と遅延した電圧信号とを比較する段階と、を含み、
前記比較の結果は、前記抵抗状態が高抵抗状態から低抵抗状態に移行するか、または低抵抗状態から高抵抗状態に移行するかを示すことを特徴とする請求項2に記載の読出し方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/963,851 US6538917B1 (en) | 2001-09-25 | 2001-09-25 | Read methods for magneto-resistive device having soft reference layer |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002273429A Division JP2003151263A (ja) | 2001-09-25 | 2002-09-19 | 磁気的に軟らかい基準層を有する磁気抵抗素子のための読出し方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008059746A JP2008059746A (ja) | 2008-03-13 |
JP4658102B2 true JP4658102B2 (ja) | 2011-03-23 |
Family
ID=25507809
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002273429A Withdrawn JP2003151263A (ja) | 2001-09-25 | 2002-09-19 | 磁気的に軟らかい基準層を有する磁気抵抗素子のための読出し方法 |
JP2007233234A Expired - Fee Related JP4658102B2 (ja) | 2001-09-25 | 2007-09-07 | 磁気的に軟らかい基準層を有する磁気抵抗素子のための読出し方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002273429A Withdrawn JP2003151263A (ja) | 2001-09-25 | 2002-09-19 | 磁気的に軟らかい基準層を有する磁気抵抗素子のための読出し方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6538917B1 (ja) |
EP (1) | EP1296331A3 (ja) |
JP (2) | JP2003151263A (ja) |
KR (1) | KR20030027689A (ja) |
CN (1) | CN1307643C (ja) |
TW (1) | TWI263216B (ja) |
Families Citing this family (48)
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JP2003151262A (ja) * | 2001-11-15 | 2003-05-23 | Toshiba Corp | 磁気ランダムアクセスメモリ |
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US6850433B2 (en) * | 2002-07-15 | 2005-02-01 | Hewlett-Packard Development Company, Lp. | Magnetic memory device and method |
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JP3788964B2 (ja) | 2002-09-10 | 2006-06-21 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
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US6885582B2 (en) * | 2003-06-12 | 2005-04-26 | Hewlett-Packard Development Company, L.P. | Magnetic memory storage device |
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US6836422B1 (en) * | 2003-07-07 | 2004-12-28 | Hewlett-Packard Development Company, L.P. | System and method for reading a memory cell |
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US7598555B1 (en) | 2003-08-22 | 2009-10-06 | International Business Machines Corporation | MgO tunnel barriers and method of formation |
US7274080B1 (en) | 2003-08-22 | 2007-09-25 | International Business Machines Corporation | MgO-based tunnel spin injectors |
US7027320B2 (en) * | 2003-10-21 | 2006-04-11 | Hewlett-Packard Development Company, L.P. | Soft-reference magnetic memory digitized device and method of operation |
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EP2276034B1 (en) * | 2009-07-13 | 2016-04-27 | Crocus Technology S.A. | Self-referenced magnetic random access memory cell |
EP2575135B1 (en) * | 2011-09-28 | 2015-08-05 | Crocus Technology S.A. | Magnetic random access memory (MRAM) cell and method for reading the MRAM cell using a self-referenced read operation |
US9047945B2 (en) * | 2012-10-15 | 2015-06-02 | Marvell World Trade Ltd. | Systems and methods for reading resistive random access memory (RRAM) cells |
KR20140052676A (ko) | 2012-10-25 | 2014-05-07 | 삼성디스플레이 주식회사 | 터치 센싱 패널의 제조 방법 |
US10170162B2 (en) * | 2017-05-23 | 2019-01-01 | Sandisk Technologies Llc | Sense amplifier calibration |
US11605409B2 (en) | 2020-10-27 | 2023-03-14 | International Business Machines Corporation | MTJ-based analog memory device |
US11664059B2 (en) | 2021-06-02 | 2023-05-30 | International Business Machines Corporation | Low power MTJ-based analog memory device |
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2001
- 2001-09-25 US US09/963,851 patent/US6538917B1/en not_active Expired - Lifetime
-
2002
- 2002-08-07 TW TW091117781A patent/TWI263216B/zh not_active IP Right Cessation
- 2002-09-02 EP EP02256084A patent/EP1296331A3/en not_active Withdrawn
- 2002-09-19 JP JP2002273429A patent/JP2003151263A/ja not_active Withdrawn
- 2002-09-24 CN CNB021323445A patent/CN1307643C/zh not_active Expired - Lifetime
- 2002-09-24 KR KR1020020057725A patent/KR20030027689A/ko not_active Application Discontinuation
-
2007
- 2007-09-07 JP JP2007233234A patent/JP4658102B2/ja not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
US20030058685A1 (en) | 2003-03-27 |
JP2008059746A (ja) | 2008-03-13 |
EP1296331A3 (en) | 2003-12-03 |
CN1409321A (zh) | 2003-04-09 |
CN1307643C (zh) | 2007-03-28 |
EP1296331A2 (en) | 2003-03-26 |
KR20030027689A (ko) | 2003-04-07 |
JP2003151263A (ja) | 2003-05-23 |
TWI263216B (en) | 2006-10-01 |
US6538917B1 (en) | 2003-03-25 |
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