JP4650695B2 - 圧電体磁器組成物及び圧電セラミック電子部品 - Google Patents
圧電体磁器組成物及び圧電セラミック電子部品 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims description 96
- 239000000203 mixture Substances 0.000 title claims description 79
- 238000010304 firing Methods 0.000 claims description 62
- 239000002994 raw material Substances 0.000 claims description 33
- 238000002156 mixing Methods 0.000 claims description 30
- 239000000843 powder Substances 0.000 claims description 30
- 238000005245 sintering Methods 0.000 claims description 8
- 239000002003 electrode paste Substances 0.000 claims description 6
- 230000005684 electric field Effects 0.000 description 48
- 238000013329 compounding Methods 0.000 description 18
- 229910052759 nickel Inorganic materials 0.000 description 17
- 229910052758 niobium Inorganic materials 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 229910010293 ceramic material Inorganic materials 0.000 description 10
- 239000007772 electrode material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910052746 lanthanum Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
3 内部電極
ここで、配合比a、b、c及びdは下記数式(1)〜(4)を充足している。
0.930≦a≦0.998…(1)
1.02≦b≦1.40…(2)
0.1≦c≦0.6…(3)
0.3≦d≦0.6…(4)
Aサイトを構成するPbの配合比aが0.998を超えて化学量論組成に近付くと、低温での焼成は可能であるが、高電界印加時に所望の高圧電定数を得ることができなくなる。一方、前記配合比aが0.930未満になると焼結性が低下するため、900〜1000℃といった低温焼成では高圧電定数を得ることができなくなる。
NiとNbの比率を規定する配合比bが1.02未満になるとNbに対するNiの含有量が少なくなりすぎて焼結性が低下し、低温焼成では高い圧電定数を得ることができなくなる。一方、前記配合比bが1.40を超えた場合は低温での焼成は可能であるが、高電界印加時に所望の高圧電定数を得ることができなくなる。
Bサイト中の(Ni,Nb)成分の配合比cが0.1未満の場合は低温での焼成は可能であるが、高電界印加時に高圧電定数を得ることができなくなる。一方、配合比cが0.6を超えると焼結性が低下し、低温焼成では高圧電定数を得ることができなくなる。
Bサイト中のTi成分の配合比dが0.3未満、又は0.6を超えた場合は、いずれの場合も低温焼成は可能であるが、高電界印加時に所望の高圧電定数を得ることができなくなる。
そして、このように組成式(A)が数式(1)〜(4)を充足することにより、1kV/mmの高電界を印加しても圧電定数|d31|が350pC/N以上の高圧電定数を有する圧電体磁器組成物を低温焼成で得ることができる。
これに対して試料番号32〜36、38、41〜44、47〜49、52、53、及び55は、0.930≦a≦0.998、1.02≦b≦1.40、0.1≦c≦0.6、及び0.3≦d≦0.6の範囲にあり、したがって本発明範囲内であるので、焼成温度900〜1100℃の範囲で良好な焼結性を得ることができ、しかもAサイト中に配合比で0.05のSrをPbに固溶させているので、圧電定数|d31|が450pC/N以上となり、Srを含有していない場合に比べ(表1参照)、より一層の高圧電定数を有する圧電体を得ることができることが分かった。
Claims (5)
- 組成式〔Pba{(Nib/3Nb2/3)cTidZr1-c-d}O3〕で表され、前記配合比a、b、c、及びdが、それぞれ0.930≦a≦0.998、1.02≦b≦1.40、0.1≦c≦0.6、及び0.3≦d≦0.6であることを特徴とする圧電体磁器組成物。
- 組成式〔(Pb1-xXx)a{(Nib/3Nb2/3)cTidZr1-c-d}O3〕で表されると共に、Xが、Sr、Ba、Ca、及びLaの中から選択された少なくとも1種からなり、前記配合比x、a、b、c、及びdが、それぞれ0.001≦x≦0.1、0.930≦a≦0.998、1.02≦b≦1.40、0.1≦c≦0.6、及び0.3≦d≦0.6であることを特徴とする圧電体磁器組成物。
- 焼成前の原料粉末の比表面積が5m2/g以上であることを特徴とする請求項1又は請求項2記載の圧電体磁器組成物。
- 圧電セラミック素体が、請求項1乃至請求項3のいずれかに記載の圧電体磁器組成物で形成されていることを特徴とする圧電セラミック電子部品。
- 前記圧電セラミック素体に内部電極が埋設されると共に、該内部電極は、Agを主成分とする電極ペーストが焼結されてなることを特徴とする請求項4記載の圧電セラミック電子部品。
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Application Number | Priority Date | Filing Date | Title |
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JP2004289972 | 2004-10-01 | ||
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PCT/JP2005/015251 WO2006038389A1 (ja) | 2004-10-01 | 2005-08-23 | 圧電体磁器組成物及び圧電セラミック電子部品 |
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JP5158516B2 (ja) * | 2006-12-26 | 2013-03-06 | 株式会社村田製作所 | 圧電磁器組成物及び圧電素子 |
DE102007010239A1 (de) | 2007-03-02 | 2008-09-04 | Epcos Ag | Piezoelektrisches Material, Vielschicht-Aktuator und Verfahren zur Herstellung eines piezoelektrischen Bauelements |
CN102132433B (zh) * | 2008-08-28 | 2013-11-06 | 京瓷株式会社 | 层叠型压电元件、喷射装置以及燃料喷射*** |
JP5339885B2 (ja) * | 2008-12-22 | 2013-11-13 | 京セラ株式会社 | 積層型圧電素子、これを備えた噴射装置および燃料噴射システム |
JP5675503B2 (ja) * | 2011-06-03 | 2015-02-25 | 日本碍子株式会社 | 圧電/電歪素子 |
JP5611427B2 (ja) * | 2013-07-31 | 2014-10-22 | 京セラ株式会社 | 積層型圧電素子、これを備えた噴射装置および燃料噴射システム |
JP6381246B2 (ja) * | 2014-03-25 | 2018-08-29 | 日本特殊陶業株式会社 | 圧電素子およびその製造方法 |
USD857020S1 (en) * | 2016-05-25 | 2019-08-20 | Tdk Corporation | Piezoelectric element |
JP1565481S (ja) * | 2016-05-25 | 2016-12-19 | ||
DE112018003429B4 (de) * | 2017-11-09 | 2023-01-12 | Murata Manufacturing Co., Ltd. | Piezoelektrisches Bauteil, Sensor und Aktor |
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JPH0741363A (ja) * | 1993-07-29 | 1995-02-10 | Murata Mfg Co Ltd | 圧電磁器組成物 |
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JPH02301174A (ja) * | 1989-05-16 | 1990-12-13 | Tokin Corp | 圧電磁器組成物 |
JPH02303173A (ja) * | 1989-05-18 | 1990-12-17 | Murata Mfg Co Ltd | 圧電性磁器組成物 |
JP3345974B2 (ja) | 1993-07-29 | 2002-11-18 | 株式会社村田製作所 | 圧電磁器組成物 |
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JP2000128633A (ja) * | 1998-10-21 | 2000-05-09 | Ube Ind Ltd | 圧電体磁器組成物 |
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JP2002226266A (ja) * | 2001-01-30 | 2002-08-14 | Nec Tokin Corp | 圧電磁器組成物 |
JP2003063866A (ja) * | 2001-08-28 | 2003-03-05 | Nec Tokin Corp | 圧電磁器組成物の製造方法 |
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JP4777605B2 (ja) | 2003-05-21 | 2011-09-21 | 日本碍子株式会社 | 多層型圧電/電歪素子 |
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JPH0741363A (ja) * | 1993-07-29 | 1995-02-10 | Murata Mfg Co Ltd | 圧電磁器組成物 |
JPH1129357A (ja) * | 1997-05-12 | 1999-02-02 | Matsushita Electric Ind Co Ltd | 圧電材料およびその製造方法およびそれを用いた圧電振動子および圧電発音体 |
JP2001302348A (ja) * | 2000-04-19 | 2001-10-31 | Tokin Corp | 圧電磁器組成物 |
JP2002145666A (ja) * | 2000-08-31 | 2002-05-22 | Murata Mfg Co Ltd | 弾性表面波素子用圧電磁器組成物及び弾性表面波フィルタ |
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WO2006038389A1 (ja) | 2006-04-13 |
DE112005002386T5 (de) | 2007-09-06 |
US20080036334A1 (en) | 2008-02-14 |
US7504042B2 (en) | 2009-03-17 |
JPWO2006038389A1 (ja) | 2008-05-15 |
DE112005002386B4 (de) | 2010-06-02 |
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