JP4642527B2 - 積層型3次元フォトニック結晶及び発光素子及び画像表示装置 - Google Patents
積層型3次元フォトニック結晶及び発光素子及び画像表示装置 Download PDFInfo
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- JP4642527B2 JP4642527B2 JP2005102596A JP2005102596A JP4642527B2 JP 4642527 B2 JP4642527 B2 JP 4642527B2 JP 2005102596 A JP2005102596 A JP 2005102596A JP 2005102596 A JP2005102596 A JP 2005102596A JP 4642527 B2 JP4642527 B2 JP 4642527B2
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- light
- light emitting
- photonic crystal
- wavelength
- photonic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
- H01S5/426—Vertically stacked cavities
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/30—Picture reproducers using solid-state colour display devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3129—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM] scanning a light beam on the display screen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18397—Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
- H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
- Liquid Crystal (AREA)
- Lasers (AREA)
Description
12 フォトニックバンドギャップ
13 透過率
151 スイッチング層の透過率(Von)
152 スイッチング層の透過率(Voff)
211、212 スイッチング層の構成材料
221 液晶材料
222 強誘電体材料
23 欠陥共振器構造
24 線欠陥導波路構造
25 点欠陥結合型導波路構造
31 透明電極
32 電極
34 多層反射膜
1400 フォトニック結晶
1410 ヒータ
1420 駆動装置
801 上部透明電極
802 上部絶縁層
803 発光層
804 下部絶縁層
805 下部透明電極
901 背面電極
902 電子輸送層
903 発光層
904 ホール輸送層
905 透明電極
1001 欠陥共振器
1002 フォトニック結晶
1003 透明電極
1004 発光材料
1101 波長選択フィルター
1102 フォトニック結晶
1103 共振器構造
1104 紫外線光源
1201a〜c 第1〜3のフォトニック結晶からの光
1204a〜c 第1〜3のフォトニック結晶
1205a〜c 第1〜3の共振器構造
1210 電極
1211 発光部
1212a〜c スイッチング手段
1601a〜c 第1〜3の光
1602a〜c 第1〜3のフォトニック結晶
1603a〜c 第1〜3の共振器構造
1604 波長選択フィルター
1605 励起光源
1606a〜c 第1〜3のフォトニック結晶からの発光
1607a〜c スイッチング手段
1701 3次元フォトニック結晶
1702 欠陥共振器
Claims (10)
- 互いに異なるフォトニックバンドギャップを有する複数の3次元フォトニック結晶を積層して構成される積層型3次元フォトニック結晶であって、
前記複数の3次元フォトニック結晶はそれぞれの内部に周期欠陥で形成された共振器を有し、
前記周期欠陥は、励起されることにより発光する活性媒質を含んでおり、
前記複数の3次元フォトニック結晶の共振器は互いに異なる波長の光を放出し、
前記複数の3次元フォトニック結晶は、それぞれのフォトニックバンドギャップの中心波長が、光の放出方向に対して、順に短波長側へ変化するように積層されていることを特徴とする積層型3次元フォトニック結晶。 - 前記活性媒質は、電流注入により発光する活性媒質であることを特徴とする請求項1に記載の積層型3次元フォトニック結晶。
- 前記活性媒質は、励起光照射により発光する活性媒質であることを特徴とする請求項1に記載の積層型3次元フォトニック結晶。
- 請求項1乃至3のいずれかに記載の積層型3次元フォトニック結晶と、前記活性媒質を励起する励起手段とを有することを特徴とする発光素子。
- 請求項4に記載の発光素子の発光状態を切換える切換手段を有することを特徴とする発光素子。
- 前記切換手段は前記励起手段の駆動信号を切換えることを特徴とする請求項5に記載の発光素子。
- 前記切換手段は前記共振器の共振波長を変更して前記発光素子の発光状態を切換えることを特徴とする請求項5に記載の発光素子。
- 前記切換手段は前記共振器より放出される光の光路を遮断して前記発光素子の発光状態を切換えることを特徴とする請求項5に記載の発光素子。
- RGBのうち少なくとも1以上の波長領域で発光することを特徴とする請求項4乃至8のいずれかに記載の発光素子。
- 請求項4乃至9のいずれかに記載の発光素子を配置して構成されることを特徴とする画像表示装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005102596A JP4642527B2 (ja) | 2004-04-12 | 2005-03-31 | 積層型3次元フォトニック結晶及び発光素子及び画像表示装置 |
US11/100,588 US7462873B2 (en) | 2004-04-12 | 2005-04-07 | Stacked three dimensional photonic crystal, light emitting device, and image display apparatus |
DE602005008302T DE602005008302D1 (de) | 2004-04-12 | 2005-04-11 | Dreidimensional gestapelter Photonischer Kristall, Lichtquelle und Bilderzeugungsapparat |
EP05252263A EP1587186B1 (en) | 2004-04-12 | 2005-04-11 | Stacked three dimensional photonic crystal, light emitting device, and image display apparatus |
US12/262,353 US20090060410A1 (en) | 2004-04-12 | 2008-10-31 | Stacked three diminesional photonic crystal, light emitting device, and image display apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004116806 | 2004-04-12 | ||
JP2005102596A JP4642527B2 (ja) | 2004-04-12 | 2005-03-31 | 積層型3次元フォトニック結晶及び発光素子及び画像表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005328040A JP2005328040A (ja) | 2005-11-24 |
JP2005328040A5 JP2005328040A5 (ja) | 2008-12-11 |
JP4642527B2 true JP4642527B2 (ja) | 2011-03-02 |
Family
ID=34940773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005102596A Expired - Fee Related JP4642527B2 (ja) | 2004-04-12 | 2005-03-31 | 積層型3次元フォトニック結晶及び発光素子及び画像表示装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7462873B2 (ja) |
EP (1) | EP1587186B1 (ja) |
JP (1) | JP4642527B2 (ja) |
DE (1) | DE602005008302D1 (ja) |
Families Citing this family (37)
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JP4642527B2 (ja) * | 2004-04-12 | 2011-03-02 | キヤノン株式会社 | 積層型3次元フォトニック結晶及び発光素子及び画像表示装置 |
CN100507634C (zh) * | 2004-04-21 | 2009-07-01 | 松下电器产业株式会社 | 光子晶体器件 |
JP4603847B2 (ja) * | 2004-10-15 | 2010-12-22 | キヤノン株式会社 | 共振器および発光素子および波長変換素子 |
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JP2007242945A (ja) * | 2006-03-09 | 2007-09-20 | Furukawa Electric Co Ltd:The | 面発光半導体レーザ素子 |
US20110190167A1 (en) * | 2006-03-22 | 2011-08-04 | Hillis W Daniel | Electromagnetically responsive element with self resonant bodies |
US20070223858A1 (en) * | 2006-03-22 | 2007-09-27 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Electromagnetically responsive element with self resonant bodies |
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-
2005
- 2005-03-31 JP JP2005102596A patent/JP4642527B2/ja not_active Expired - Fee Related
- 2005-04-07 US US11/100,588 patent/US7462873B2/en not_active Expired - Fee Related
- 2005-04-11 DE DE602005008302T patent/DE602005008302D1/de active Active
- 2005-04-11 EP EP05252263A patent/EP1587186B1/en not_active Expired - Fee Related
-
2008
- 2008-10-31 US US12/262,353 patent/US20090060410A1/en not_active Abandoned
Patent Citations (7)
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JPH0794819A (ja) * | 1993-09-21 | 1995-04-07 | Toshiba Corp | レーザー素子 |
JPH07263752A (ja) * | 1994-03-18 | 1995-10-13 | Sony Corp | 半導体カラー発光素子 |
JP2003179315A (ja) * | 2001-12-12 | 2003-06-27 | Seiko Epson Corp | 光モジュールおよび光通信システム |
JP2004006567A (ja) * | 2002-03-26 | 2004-01-08 | Japan Science & Technology Corp | 点欠陥3次元フォトニック結晶光共振器 |
US20030235229A1 (en) * | 2002-06-19 | 2003-12-25 | Hongyu Deng | Vertical cavity surface emitting laser using photonic crystals |
US20040062505A1 (en) * | 2002-09-26 | 2004-04-01 | Mitsubishi Denki Kabushiki Kaisha | Optical active device |
JP2005157336A (ja) * | 2003-11-07 | 2005-06-16 | Canon Inc | 光素子の作製方法、3次元積層構造を有する光素子 |
Also Published As
Publication number | Publication date |
---|---|
EP1587186A2 (en) | 2005-10-19 |
US20050238310A1 (en) | 2005-10-27 |
US7462873B2 (en) | 2008-12-09 |
JP2005328040A (ja) | 2005-11-24 |
US20090060410A1 (en) | 2009-03-05 |
EP1587186A3 (en) | 2005-11-30 |
EP1587186B1 (en) | 2008-07-23 |
DE602005008302D1 (de) | 2008-09-04 |
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