JP4642047B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4642047B2 JP4642047B2 JP2007158205A JP2007158205A JP4642047B2 JP 4642047 B2 JP4642047 B2 JP 4642047B2 JP 2007158205 A JP2007158205 A JP 2007158205A JP 2007158205 A JP2007158205 A JP 2007158205A JP 4642047 B2 JP4642047 B2 JP 4642047B2
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- Prior art keywords
- electrode
- wire
- electrode pad
- fine metal
- bonding
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
また、第1のアイランド上に固着された第1の半導体チップと、前記第1のアイランドと離間して配置された第2のアイランド上に固着された第2の半導体チップと、前記第1のアイランドと前記第2のアイランドを囲むように設けられた複数のリードとを有する半導体装置に於いて、前記第1の半導体チップと前記第2の半導体チップとの対向する側辺に位置し、前記第1の半導体チップ側に設けられた複数の第1の電極パッドと、前記第1の半導体チップと前記第2の半導体チップとの対向する側辺に位置し、前記第2の半導体チップ側に設けられた第2の電極パッドと、前記第2の電極パッドに設けられたバンプ電極と、前記複数の第1の電極パッドの一つ目と前記バンプ電極とを接続する第1のボンディングワイヤと、前記複数の第1の電極パッドの二つ目と前記バンプ電極とを接続する第2のボンディングワイヤとを有し、前記バンプ電極側の前記第1のボンディングワイヤおよび前記第2のボンディングワイヤの付け根は、前記バンプ電極を形成する際に設けられる凸部の上を避けて設けられる事で解決するものである。
そして、前記ボンディングワイヤの前記バンプ電極側は、スティッチボンドで形成されることで解決するものである。
1つの電極パッドで複数本の金属細線を接続することができるので、電極パッドの形成面積を統一して形成することができる。つまり、外部と授受する電流容量の大小によらず、電極パッドの形成面積を統一することができる。また、外部と授受する電流容量の大きい場合にも、形成する電極パッドの数を必要最低限の数とすることができる。そのことで、ICチップサイズの低減も実現することができる。
キャピラリ22の水平方向の位置はそのままで、その先端と金ボール27の上端(平坦部)との距離28が10〜30μm程度となるような位置でキャピラリ22を停止する。金ワイヤ24の付け根付近はキャピラリ22内部に収納されず、露出した状態となる。
2:ICチップ
3:アイランド
6:第1のアイランド
7:第2のアイランド
15:電極パッド
Claims (4)
- 半導体素子の一主面上には電流を授受する複数の電極パッドが形成され、少なくとも1つの該電極パッド上にバンプ電極が形成された半導体装置に於いて、
前記バンプ電極が形成された1つの前記電極パッドに対し、少なくとも2本以上のボンディングワイヤが接続され、
前記バンプ電極側の前記2本以上のボンディングワイヤの付け根は、前記バンプ電極を形成する際に設けられる凸部の上を避けて設けられる事を特徴とした半導体装置。 - 前記ボンディングワイヤの前記バンプ電極側は、スティッチボンドで形成される請求項1の半導体装置。
- 第1のアイランド上に固着された第1の半導体チップと、
前記第1のアイランドと離間して配置された第2のアイランド上に固着された第2の半導体チップと、
前記第1のアイランドと前記第2のアイランドを囲むように設けられた複数のリードとを有する半導体装置に於いて、
前記第1の半導体チップと前記第2の半導体チップとの対向する側辺に位置し、前記第1の半導体チップ側に設けられた複数の第1の電極パッドと、
前記第1の半導体チップと前記第2の半導体チップとの対向する側辺に位置し、前記第2の半導体チップ側に設けられた第2の電極パッドと、
前記第2の電極パッドに設けられたバンプ電極と、
前記複数の第1の電極パッドの一つ目と前記バンプ電極とを接続する第1のボンディングワイヤと、
前記複数の第1の電極パッドの二つ目と前記バンプ電極とを接続する第2のボンディングワイヤとを有し、
前記バンプ電極側の前記第1のボンディングワイヤおよび前記第2のボンディングワイヤの付け根は、前記バンプ電極を形成する際に設けられる凸部の上を避けて設けられる事を特徴とした半導体装置。 - 前記ボンディングワイヤの前記バンプ電極側は、スティッチボンドで形成される請求項3の半導体装置。
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JP7455520B2 (ja) * | 2018-12-12 | 2024-03-26 | 浜松ホトニクス株式会社 | 光検出装置 |
US11901379B2 (en) | 2018-12-12 | 2024-02-13 | Hamamatsu Photonics K.K. | Photodetector |
WO2020121854A1 (ja) | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | 光検出装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5921035A (ja) * | 1982-07-26 | 1984-02-02 | Nec Corp | 半導体装置 |
JP2001237263A (ja) * | 2000-02-24 | 2001-08-31 | Hitachi Ltd | 高周波回路装置及びその製造方法 |
JP2001523400A (ja) * | 1998-03-06 | 2001-11-20 | マイクロチップ テクノロジー インコーポレイテッド | チップ間ボンディングを有する集積回路パッケージおよびその方法 |
JP2002016210A (ja) * | 2000-06-29 | 2002-01-18 | Sanyo Electric Co Ltd | 半導体装置 |
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2007
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5921035A (ja) * | 1982-07-26 | 1984-02-02 | Nec Corp | 半導体装置 |
JP2001523400A (ja) * | 1998-03-06 | 2001-11-20 | マイクロチップ テクノロジー インコーポレイテッド | チップ間ボンディングを有する集積回路パッケージおよびその方法 |
JP2001237263A (ja) * | 2000-02-24 | 2001-08-31 | Hitachi Ltd | 高周波回路装置及びその製造方法 |
JP2002016210A (ja) * | 2000-06-29 | 2002-01-18 | Sanyo Electric Co Ltd | 半導体装置 |
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