JP4628954B2 - 酸化物薄膜製造方法 - Google Patents
酸化物薄膜製造方法 Download PDFInfo
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- JP4628954B2 JP4628954B2 JP2005513346A JP2005513346A JP4628954B2 JP 4628954 B2 JP4628954 B2 JP 4628954B2 JP 2005513346 A JP2005513346 A JP 2005513346A JP 2005513346 A JP2005513346 A JP 2005513346A JP 4628954 B2 JP4628954 B2 JP 4628954B2
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- gas
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- 239000010409 thin film Substances 0.000 title claims description 106
- 238000004519 manufacturing process Methods 0.000 title claims description 45
- 239000007789 gas Substances 0.000 claims description 218
- 239000010408 film Substances 0.000 claims description 99
- 229910052760 oxygen Inorganic materials 0.000 claims description 64
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 63
- 239000001301 oxygen Substances 0.000 claims description 63
- 238000006243 chemical reaction Methods 0.000 claims description 57
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- 238000000034 method Methods 0.000 claims description 22
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- 229910052751 metal Inorganic materials 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 14
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 229910002367 SrTiO Inorganic materials 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 239000012808 vapor phase Substances 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910004121 SrRuO Inorganic materials 0.000 claims description 4
- -1 Ta 2 O 5 Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
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- 241000877463 Lanio Species 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
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- 239000000463 material Substances 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
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- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
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- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 239000006227 byproduct Substances 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
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- Crystals, And After-Treatments Of Crystals (AREA)
Description
2 反応室 3 シャワープレート
4 ガス活性化手段 5 ガス混合器
6 原料ガス配管 7 気化器
7a 原料供給部 8 配管
S 基板
Claims (9)
- 酸化物薄膜用原料を気化した原料ガス、キャリアガス及び酸化ガスをガス混合器で混合し、得られた混合ガスをシャワープレートを通して化学気相成長装置の反応室内で加熱された基板上に供給して反応させ、基板上に酸化物薄膜を製造する方法において、
前記ガス混合器と前記シャワープレートとの間に設けられ、内壁表面積が4.8×10−3m2〜1.28×10−1m2である配管を備え、シャワープレートへ導入される際の原料ガスが所望の膜特性が得られる金属原子含有分子に気相分解される温度に加熱されたガス活性化手段を通して、前記混合ガスを前記反応室内に供給し、
前記酸化ガスの流量割合が混合ガス基準で60%以上であることを特徴とする酸化物薄膜製造方法。 - 酸化物薄膜用原料を気化した原料ガス、キャリアガス及び酸化ガスをガス混合器で混合し、得られた混合ガスをシャワープレートを通して化学気相成長装置の反応室内で加熱された基板上に供給して反応させ、基板上に酸化物薄膜を製造する方法において、
前記混合ガスを前記ガス混合器と前記シャワープレートとの間に設けられたガス活性化手段を通して反応室内に供給するものであって、
前記混合ガスを前記反応室内に供給してシード層としての初期層を成膜する工程と、
前記初期層を成膜する工程で供給された混合ガスよりも高い酸化ガス流量割合を有する混合ガスを前記反応室内に供給して前記初期層の上に第二層を連続して成膜する工程と、を含むことを特徴とする酸化物薄膜製造方法。 - 前記初期層を成膜する工程における酸化ガスの流量割合が混合ガス基準で60%未満であり、前記第二層を成膜する工程における酸化ガスの流量割合が混合ガス基準で60%以上であることを特徴とする請求項2記載の酸化物薄膜製造方法。
- 前記ガス活性化手段が、シャワープレートへ導入される際の原料ガスが所望の膜特性が得られる金属原子含有分子に気相分解される温度に維持されていることを特徴とする請求項2または請求項3記載の酸化物薄膜製造方法。
- 前記酸化ガスは、酸素、オゾン、N2O、及びNO2から選ばれたガスであることを特徴とする請求項1乃至請求項4のいずれか1項記載の酸化物薄膜製造方法。
- 前記キャリアガスは、窒素、ヘリウム、アルゴン、ネオン、クリプトンから選ばれた不活性ガスであることを特徴とする請求項1乃至請求項5のいずれか1項記載の酸化物薄膜製造方法。
- 前記基板は、Pt、Ir、Rh、Ru、MgO、SrTiO3、IrO2、RuO2、SrRuO3、及びLaNiO3から選ばれた材料からなる電極を有し、この電極の上に前記酸化物薄膜を製造することを特徴とする請求項1乃至請求項6のいずれか1項記載の酸化物薄膜製造方法。
- 前記酸化物薄膜は、SiO2、TiO2、Al2O3、Ta2O5、MgO、ZrO2、HfO2、(Ba,Sr)TiO2、及びSrTiO3から選ばれた常誘電体酸化物、または、Pb(Zr,Ti)O3、SrBi2Ta2O9、及びBi4Ti3O12から選ばれた強誘電体酸化物からなることを特徴とする請求項1乃至請求項7のいずれか1項記載の酸化物薄膜製造方法。
- 製造する酸化物薄膜中の所定の原子が基板中へ拡散しやすい場合、初期層中のその原子の量を拡散しにくい基板の場合より多くすることによりエピタキシャル成長を実現することを特徴とする請求項1乃至請求項8のいずれか1項記載の酸化物薄膜製造方法。
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JP2008053683A (ja) * | 2006-07-27 | 2008-03-06 | Matsushita Electric Ind Co Ltd | 絶縁膜形成方法、半導体装置、および基板処理装置 |
KR20090042285A (ko) * | 2006-08-02 | 2009-04-29 | 가부시키가이샤 아루박 | 막 형성방법 및 막 형성장치 |
JP2010080813A (ja) * | 2008-09-29 | 2010-04-08 | Fujifilm Corp | 圧電体膜とその製造方法、圧電素子、及び液体吐出装置 |
TWI452946B (zh) * | 2009-12-29 | 2014-09-11 | Univ Nat Yunlin Sci & Tech | Plasma reaction device |
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CN110586180B (zh) * | 2019-09-20 | 2022-06-14 | 湖南师范大学 | 一种具有可见光催化n2o参与选择性氧化的钌杂化十聚钨酸季铵盐的制备方法 |
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EP1662556A1 (en) | 2006-05-31 |
TWI363377B (ja) | 2012-05-01 |
KR20110116065A (ko) | 2011-10-24 |
CN100435294C (zh) | 2008-11-19 |
TW200511404A (en) | 2005-03-16 |
KR20060118418A (ko) | 2006-11-23 |
CN1842901A (zh) | 2006-10-04 |
KR101179098B1 (ko) | 2012-09-03 |
EP1662556B1 (en) | 2013-11-06 |
KR101246499B1 (ko) | 2013-03-25 |
US20070054472A1 (en) | 2007-03-08 |
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