JP4605399B2 - 電界効果トランジスタの形成方法 - Google Patents
電界効果トランジスタの形成方法 Download PDFInfo
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- JP4605399B2 JP4605399B2 JP2006280548A JP2006280548A JP4605399B2 JP 4605399 B2 JP4605399 B2 JP 4605399B2 JP 2006280548 A JP2006280548 A JP 2006280548A JP 2006280548 A JP2006280548 A JP 2006280548A JP 4605399 B2 JP4605399 B2 JP 4605399B2
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- 238000000034 method Methods 0.000 title claims description 76
- 230000005669 field effect Effects 0.000 title claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 87
- 239000010703 silicon Substances 0.000 claims description 87
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 73
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 38
- 239000000377 silicon dioxide Substances 0.000 claims description 34
- 235000012239 silicon dioxide Nutrition 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 27
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 20
- 229910021332 silicide Inorganic materials 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 18
- 125000006850 spacer group Chemical group 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 11
- 241000293849 Cordylanthus Species 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 44
- 230000003647 oxidation Effects 0.000 description 15
- 238000007254 oxidation reaction Methods 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 230000002708 enhancing effect Effects 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical group 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- -1 WNx Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4941—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- Computer Hardware Design (AREA)
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Description
22,108 半導体材料
26,112 金属層
28,114 絶縁キャップ
116 側壁
120 シリコン層
122 シリサイド領域
130,140 二酸化シリコン層
142 絶縁スペーサ
Claims (8)
- 電界効果トランジスタを形成する方法であって、該方法は、
半導体材料基板上にゲート絶縁層を介してドープトシリコン層と該ドープトシリコン層上の金属層とからなるパターン化されたゲートラインを形成する工程と、
前記パターン化されたゲートラインである前記ドープトシリコン層及び金属層の側壁エッジに沿って、前記ドープトシリコン層よりも不純物が低濃度にドープされている第2シリコン層を形成する工程と、
前記金属層の側壁エッジに沿ってシリサイドを形成するために、前記第2シリコン層を前記金属層と反応させる工程と、
前記シリサイドを形成した後、前記シリサイドを残して、前記ドープトシリコン層に対して前記第2シリコン層を選択的に除去する工程と、
前記半導体材料基板の表面及び前記ドープトシリコン層の側壁エッジを酸化することにより、前記ゲートラインの側壁エッジの下にバーズビークを形成する工程と、
を具備することを特徴とする電界効果トランジスタを形成する方法。 - 前記第2シリコン層の不純物濃度は、0よりも高く、かつ、約1015atoms/cm3までであることを特徴とする請求項1記載の電界効果トランジスタを形成する方法。
- 更に、前記ゲートラインの少なくとも一部分に隣接してソース/ドレイン領域を形成する工程を具備することを特徴とする請求項1記載の電界効果トランジスタを形成する方法。
- 更に、前記ゲート絶縁層と前記ゲートラインとの間に、浮遊ゲート及び該浮遊ゲート上の中間絶縁層を形成する工程を具備することを特徴とする請求項1記載の電界効果トランジスタを形成する方法。
- 前記半導体材料基板上に二酸化シリコン層を備え、前記パターン化されたゲートラインは、前記ゲート絶縁層となる前記二酸化シリコン層の一部分の上に形成され、
前記パターン化されたゲートラインである前記ドープトシリコン層及び金属層の側壁エッジに沿って前記第2シリコン層を形成する前記工程は、
前記第2シリコン層を、前記側壁エッジ上及び前記ゲートライン上に形成する工程と、
前記第2シリコン層を異方性エッチングすることにより、前記側壁エッジに沿って前記第2シリコン層の一部分を残しつつ、前記ゲートライン上の前記第2シリコン層を選択的に除去する工程と、
を具備することを特徴とする請求項1記載の電界効果トランジスタを形成する方法。 - 前記二酸化シリコン層の、前記一部分を除く他の部分は、前記パターン化されたゲートラインを超えて外側に延びて残っており、前記第2シリコン層は、前記二酸化シリコン層の前記他の部分の少なくとも一部分上に形成され、前記二酸化シリコン層の前記他の部分は、前記ゲートライン上の前記第2シリコン層の前記選択的除去の後も残っていることを特徴とする請求項5記載の電界効果トランジスタを形成する方法。
- 更に、前記パターン化されたゲートラインの少なくとも一部分に隣接してソース/ドレイン領域を形成する工程を具備することを特徴とする請求項5記載の電界効果トランジスタを形成する方法。
- 前記ソース/ドレイン領域の一部分は、前記半導体材料基板に不純物を注入することによって形成され、前記側壁エッジに沿った前記第2シリコン層の一部分は、前記注入の間、スペーサとして利用されることを特徴とする請求項7記載の電界効果トランジスタを形成する方法。
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US09/478,975 US6372618B2 (en) | 2000-01-06 | 2000-01-06 | Methods of forming semiconductor structures |
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JP4605399B2 true JP4605399B2 (ja) | 2011-01-05 |
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JP2001550787A Pending JP2003519911A (ja) | 2000-01-06 | 2001-01-08 | 半導体構造の形成方法 |
JP2006280548A Expired - Fee Related JP4605399B2 (ja) | 2000-01-06 | 2006-10-13 | 電界効果トランジスタの形成方法 |
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US (5) | US6372618B2 (ja) |
JP (2) | JP2003519911A (ja) |
KR (1) | KR100484372B1 (ja) |
AU (1) | AU2637801A (ja) |
DE (1) | DE10194791B4 (ja) |
GB (1) | GB2373925B (ja) |
WO (1) | WO2001050507A1 (ja) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
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US5739066A (en) | 1996-09-17 | 1998-04-14 | Micron Technology, Inc. | Semiconductor processing methods of forming a conductive gate and line |
US6143611A (en) * | 1998-07-30 | 2000-11-07 | Micron Technology, Inc. | Semiconductor processing methods, methods of forming electronic components, and transistors |
US6372618B2 (en) * | 2000-01-06 | 2002-04-16 | Micron Technology, Inc. | Methods of forming semiconductor structures |
JP2001332630A (ja) * | 2000-05-19 | 2001-11-30 | Sharp Corp | 半導体装置の製造方法 |
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US6890843B2 (en) | 2005-05-10 |
US20020019120A1 (en) | 2002-02-14 |
GB0213397D0 (en) | 2002-07-24 |
DE10194791T1 (de) | 2003-01-16 |
US20080258245A1 (en) | 2008-10-23 |
US20020098690A1 (en) | 2002-07-25 |
GB2373925A (en) | 2002-10-02 |
US20030157793A1 (en) | 2003-08-21 |
US20050205900A1 (en) | 2005-09-22 |
US6372618B2 (en) | 2002-04-16 |
US7405455B2 (en) | 2008-07-29 |
DE10194791B4 (de) | 2005-08-18 |
WO2001050507A1 (en) | 2001-07-12 |
JP2003519911A (ja) | 2003-06-24 |
AU2637801A (en) | 2001-07-16 |
JP2007088486A (ja) | 2007-04-05 |
US6541362B2 (en) | 2003-04-01 |
KR100484372B1 (ko) | 2005-04-22 |
KR20020064984A (ko) | 2002-08-10 |
GB2373925B (en) | 2004-09-08 |
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