JP4586841B2 - 薄膜トランジスタの製造方法 - Google Patents
薄膜トランジスタの製造方法 Download PDFInfo
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- JP4586841B2 JP4586841B2 JP2007267359A JP2007267359A JP4586841B2 JP 4586841 B2 JP4586841 B2 JP 4586841B2 JP 2007267359 A JP2007267359 A JP 2007267359A JP 2007267359 A JP2007267359 A JP 2007267359A JP 4586841 B2 JP4586841 B2 JP 4586841B2
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- Prior art keywords
- film
- thin film
- film transistor
- gas
- manufacturing
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- 239000010409 thin film Substances 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010408 film Substances 0.000 claims description 104
- 239000007789 gas Substances 0.000 claims description 38
- 238000001312 dry etching Methods 0.000 claims description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 21
- 229910052731 fluorine Inorganic materials 0.000 claims description 21
- 239000011737 fluorine Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 19
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 29
- 238000000034 method Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Drying Of Semiconductors (AREA)
Description
請求項2に記載の発明は、請求項1に記載の発明において、前記混合ガスはさらに不活性ガスを含むことを特徴とするものである。
請求項3に記載の発明は、請求項2に記載の発明において、前記不活性ガスは窒素を含むことを特徴とするものである。
請求項4に記載の発明は、請求項1〜3の何れか一項に記載の発明において、前記フッ素ガスに対する前記塩素ガスの流量比は1〜10であることを特徴とするものである。
請求項5に記載の発明は、請求項1〜4の何れか一項に記載の発明において、前記フッ素ガスに対する前記塩素ガスの流量比は1〜20であることを特徴とするものである。
請求項6に記載の発明は、請求項1〜5の何れか一項に記載の発明において、前記ドライエッチングは1〜100Paの真空雰囲気下で行うことを特徴とするものである。
2 ゲート電極
3 ゲート絶縁膜
4 半導体薄膜
5 チャネル保護膜
6、7 オーミックコンタクト層
8 ソース電極
9 ドレイン電極
10 薄膜トランジスタ
11 オーバーコート膜
12 コンタクトホール
13 画素電極
21 真性アモルファスシリコン膜
22 窒化シリコン膜
23 レジスト膜
24 n型アモルファスシリコン膜
25 ソース・ドレイン電極形成用膜
26、27 レジスト膜
31 反応容器
32 下部電極
33 上部電極
34 高周波電源
35 被加工物
37 真空ポンプ
38 ガス導入管
42、43 電磁弁
44、45 マスフローコントローラ
46 フッ素ガス供給源
47 塩素ガス供給源
Claims (6)
- 窒化シリコン膜上に形成された半導体薄膜を含む薄膜トランジスタの製造方法において、フッ素ガスおよび塩素ガスを含む混合ガスを用いた平行平板型のカソードカップリングによるドライエッチングにより前記窒化シリコン膜をストッパーとして前記半導体薄膜をドライエッチングすることを特徴とする薄膜トランジスタの製造方法。
- 請求項1に記載の発明において、前記混合ガスはさらに不活性ガスを含むことを特徴とする薄膜トランジスタの製造方法。
- 請求項2に記載の発明において、前記不活性ガスは窒素を含むことを特徴とする薄膜トランジスタの製造方法。
- 請求項1〜3の何れか一項に記載の発明において、前記フッ素ガスに対する前記塩素ガスの流量比は1〜10であることを特徴とする薄膜トランジスタの製造方法。
- 請求項1〜4の何れか一項に記載の発明において、前記フッ素ガスに対する前記塩素ガスの流量比は1〜20であることを特徴とする薄膜トランジスタの製造方法。
- 請求項1〜5の何れか一項に記載の発明において、前記ドライエッチングは1〜100Paの真空雰囲気下で行うことを特徴とする薄膜トランジスタの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007267359A JP4586841B2 (ja) | 2007-05-30 | 2007-10-15 | 薄膜トランジスタの製造方法 |
KR1020080049046A KR101009835B1 (ko) | 2007-05-30 | 2008-05-27 | 박막트랜지스터의 제조방법 |
US12/154,947 US20080299778A1 (en) | 2007-05-30 | 2008-05-28 | Silicon film dry etching method |
TW097119800A TWI376744B (en) | 2007-05-30 | 2008-05-29 | Silicon film dry etching method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007143027 | 2007-05-30 | ||
JP2007267359A JP4586841B2 (ja) | 2007-05-30 | 2007-10-15 | 薄膜トランジスタの製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009184287A Division JP2010004058A (ja) | 2007-05-30 | 2009-08-07 | シリコン膜のドライエッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009010310A JP2009010310A (ja) | 2009-01-15 |
JP4586841B2 true JP4586841B2 (ja) | 2010-11-24 |
Family
ID=40106827
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007267359A Expired - Fee Related JP4586841B2 (ja) | 2007-05-30 | 2007-10-15 | 薄膜トランジスタの製造方法 |
JP2009184287A Pending JP2010004058A (ja) | 2007-05-30 | 2009-08-07 | シリコン膜のドライエッチング方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009184287A Pending JP2010004058A (ja) | 2007-05-30 | 2009-08-07 | シリコン膜のドライエッチング方法 |
Country Status (4)
Country | Link |
---|---|
JP (2) | JP4586841B2 (ja) |
KR (1) | KR101009835B1 (ja) |
CN (1) | CN101315889A (ja) |
TW (1) | TWI376744B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
JP5514162B2 (ja) * | 2011-07-22 | 2014-06-04 | 東京エレクトロン株式会社 | アモルファスシリコン膜の成膜方法および成膜装置 |
JP6772820B2 (ja) | 2016-12-22 | 2020-10-21 | 日亜化学工業株式会社 | 再生基板の製造方法及び発光素子の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002190470A (ja) * | 2000-12-22 | 2002-07-05 | Shibaura Mechatronics Corp | エッチング装置 |
JP2004098245A (ja) * | 2002-09-11 | 2004-04-02 | Tokyo Electron Ltd | 基板処理方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2558995B2 (ja) * | 1992-07-14 | 1996-11-27 | 松下電器産業株式会社 | 薄膜トランジスタの製造方法 |
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2007
- 2007-10-15 JP JP2007267359A patent/JP4586841B2/ja not_active Expired - Fee Related
-
2008
- 2008-05-27 KR KR1020080049046A patent/KR101009835B1/ko not_active IP Right Cessation
- 2008-05-29 TW TW097119800A patent/TWI376744B/zh active
- 2008-05-30 CN CNA2008100998563A patent/CN101315889A/zh active Pending
-
2009
- 2009-08-07 JP JP2009184287A patent/JP2010004058A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002190470A (ja) * | 2000-12-22 | 2002-07-05 | Shibaura Mechatronics Corp | エッチング装置 |
JP2004098245A (ja) * | 2002-09-11 | 2004-04-02 | Tokyo Electron Ltd | 基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2009010310A (ja) | 2009-01-15 |
KR101009835B1 (ko) | 2011-01-19 |
JP2010004058A (ja) | 2010-01-07 |
TWI376744B (en) | 2012-11-11 |
KR20080106026A (ko) | 2008-12-04 |
TW200901315A (en) | 2009-01-01 |
CN101315889A (zh) | 2008-12-03 |
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