JP4550838B2 - 化学機械平坦化の後洗浄用の改良されたアルカリ化学製品 - Google Patents
化学機械平坦化の後洗浄用の改良されたアルカリ化学製品 Download PDFInfo
- Publication number
- JP4550838B2 JP4550838B2 JP2006552706A JP2006552706A JP4550838B2 JP 4550838 B2 JP4550838 B2 JP 4550838B2 JP 2006552706 A JP2006552706 A JP 2006552706A JP 2006552706 A JP2006552706 A JP 2006552706A JP 4550838 B2 JP4550838 B2 JP 4550838B2
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- Prior art keywords
- cleaning
- composition
- corrosion inhibiting
- inhibiting compound
- acid
- Prior art date
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- 238000004140 cleaning Methods 0.000 title claims abstract description 87
- 239000000126 substance Substances 0.000 title claims description 40
- 230000007797 corrosion Effects 0.000 claims abstract description 57
- 238000005260 corrosion Methods 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000010949 copper Substances 0.000 claims abstract description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052802 copper Inorganic materials 0.000 claims abstract description 33
- 239000002738 chelating agent Substances 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 29
- 150000001875 compounds Chemical class 0.000 claims description 27
- 230000002401 inhibitory effect Effects 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 26
- 239000012459 cleaning agent Substances 0.000 claims description 15
- 239000004094 surface-active agent Substances 0.000 claims description 14
- ADVGKWPZRIDURE-UHFFFAOYSA-N 2'-Hydroxyacetanilide Chemical compound CC(=O)NC1=CC=CC=C1O ADVGKWPZRIDURE-UHFFFAOYSA-N 0.000 claims description 12
- MWOOGOJBHIARFG-UHFFFAOYSA-N vanillin Chemical compound COC1=CC(C=O)=CC=C1O MWOOGOJBHIARFG-UHFFFAOYSA-N 0.000 claims description 12
- 235000012141 vanillin Nutrition 0.000 claims description 12
- FGQOOHJZONJGDT-UHFFFAOYSA-N vanillin Natural products COC1=CC(O)=CC(C=O)=C1 FGQOOHJZONJGDT-UHFFFAOYSA-N 0.000 claims description 12
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 11
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 9
- LHGVFZTZFXWLCP-UHFFFAOYSA-N guaiacol Chemical compound COC1=CC=CC=C1O LHGVFZTZFXWLCP-UHFFFAOYSA-N 0.000 claims description 8
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 6
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 6
- 239000002280 amphoteric surfactant Substances 0.000 claims description 6
- 125000000129 anionic group Chemical group 0.000 claims description 6
- 239000003945 anionic surfactant Substances 0.000 claims description 6
- 125000002091 cationic group Chemical group 0.000 claims description 6
- 239000003093 cationic surfactant Substances 0.000 claims description 6
- 239000003085 diluting agent Substances 0.000 claims description 6
- 239000002736 nonionic surfactant Substances 0.000 claims description 6
- QAIPRVGONGVQAS-DUXPYHPUSA-N trans-caffeic acid Chemical compound OC(=O)\C=C\C1=CC=C(O)C(O)=C1 QAIPRVGONGVQAS-DUXPYHPUSA-N 0.000 claims description 6
- 239000002888 zwitterionic surfactant Substances 0.000 claims description 6
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 claims description 5
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 claims description 5
- 235000018417 cysteine Nutrition 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims description 5
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 claims description 5
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 4
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 claims description 4
- 229940102253 isopropanolamine Drugs 0.000 claims description 4
- PJUIMOJAAPLTRJ-UHFFFAOYSA-N monothioglycerol Chemical compound OCC(O)CS PJUIMOJAAPLTRJ-UHFFFAOYSA-N 0.000 claims description 4
- 229940035024 thioglycerol Drugs 0.000 claims description 4
- ACEAELOMUCBPJP-UHFFFAOYSA-N (E)-3,4,5-trihydroxycinnamic acid Natural products OC(=O)C=CC1=CC(O)=C(O)C(O)=C1 ACEAELOMUCBPJP-UHFFFAOYSA-N 0.000 claims description 3
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 claims description 3
- WGJCBBASTRWVJL-UHFFFAOYSA-N 1,3-thiazolidine-2-thione Chemical compound SC1=NCCS1 WGJCBBASTRWVJL-UHFFFAOYSA-N 0.000 claims description 3
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 claims description 3
- FQXRXTUXSODUFZ-UHFFFAOYSA-N 1h-imidazol-2-ylmethanethiol Chemical compound SCC1=NC=CN1 FQXRXTUXSODUFZ-UHFFFAOYSA-N 0.000 claims description 3
- WXTMDXOMEHJXQO-UHFFFAOYSA-N 2,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC=C1O WXTMDXOMEHJXQO-UHFFFAOYSA-N 0.000 claims description 3
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 claims description 3
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 3
- 239000001263 FEMA 3042 Substances 0.000 claims description 3
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 3
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 claims description 3
- 235000004883 caffeic acid Nutrition 0.000 claims description 3
- 229940074360 caffeic acid Drugs 0.000 claims description 3
- 235000013985 cinnamic acid Nutrition 0.000 claims description 3
- 229930016911 cinnamic acid Natural products 0.000 claims description 3
- QAIPRVGONGVQAS-UHFFFAOYSA-N cis-caffeic acid Natural products OC(=O)C=CC1=CC=C(O)C(O)=C1 QAIPRVGONGVQAS-UHFFFAOYSA-N 0.000 claims description 3
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethyl mercaptane Natural products CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000174 gluconic acid Substances 0.000 claims description 3
- 235000012208 gluconic acid Nutrition 0.000 claims description 3
- 239000008103 glucose Substances 0.000 claims description 3
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 claims description 3
- YQUVCSBJEUQKSH-UHFFFAOYSA-N protochatechuic acid Natural products OC(=O)C1=CC=C(O)C(O)=C1 YQUVCSBJEUQKSH-UHFFFAOYSA-N 0.000 claims description 3
- 235000015523 tannic acid Nutrition 0.000 claims description 3
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 claims description 3
- 229940033123 tannic acid Drugs 0.000 claims description 3
- 229920002258 tannic acid Polymers 0.000 claims description 3
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229940103494 thiosalicylic acid Drugs 0.000 claims description 3
- 150000003852 triazoles Chemical class 0.000 claims description 3
- WKOLLVMJNQIZCI-UHFFFAOYSA-N vanillic acid Chemical compound COC1=CC(C(O)=O)=CC=C1O WKOLLVMJNQIZCI-UHFFFAOYSA-N 0.000 claims description 3
- TUUBOHWZSQXCSW-UHFFFAOYSA-N vanillic acid Natural products COC1=CC(O)=CC(C(O)=O)=C1 TUUBOHWZSQXCSW-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- OUCXYSRPMBQONT-UHFFFAOYSA-N acetamide;phenol Chemical compound CC(N)=O.OC1=CC=CC=C1 OUCXYSRPMBQONT-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 25
- 239000002245 particle Substances 0.000 abstract description 13
- 238000011109 contamination Methods 0.000 abstract description 7
- 239000002002 slurry Substances 0.000 abstract description 7
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 229910021645 metal ion Inorganic materials 0.000 abstract description 2
- 239000002923 metal particle Substances 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 32
- 230000008569 process Effects 0.000 description 16
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 14
- 239000003112 inhibitor Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- 238000004630 atomic force microscopy Methods 0.000 description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010790 dilution Methods 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000080 wetting agent Substances 0.000 description 4
- 229940123973 Oxygen scavenger Drugs 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- -1 copper Chemical class 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- 239000005711 Benzoic acid Substances 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 2
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 235000003704 aspartic acid Nutrition 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 235000010233 benzoic acid Nutrition 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 235000015165 citric acid Nutrition 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000000157 electrochemical-induced impedance spectroscopy Methods 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 239000004220 glutamic acid Substances 0.000 description 2
- 235000013922 glutamic acid Nutrition 0.000 description 2
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 2
- 235000014304 histidine Nutrition 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- ODHYIQOBTIWVRZ-UHFFFAOYSA-N n-propan-2-ylhydroxylamine Chemical compound CC(C)NO ODHYIQOBTIWVRZ-UHFFFAOYSA-N 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229960004889 salicylic acid Drugs 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/20—Other heavy metals
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
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- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/3427—Organic compounds containing sulfur containing thiol, mercapto or sulfide groups, e.g. thioethers or mercaptales
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- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
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- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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Description
電子ウェハチップの製造は、半導体加工物が化学機械平坦化(CMP)の間または後に液体溶液で洗浄される工程を含む。“半導体加工物”は、組立てプロセスが完結されていないマイクロエレクトロニクスデバイス、典型的に内部または表面に活性領域を持つシリコンウェハである。活性領域の接続は、シリコン基板上に既に堆積された金属、典型的に銅およびタングステンの多層を用いて作られる。銅が相互接続材料として用いられると、ダマシンプロセスが用いられ、それによって銅は誘電体の中間層にエッチングされたラインに堆積され、それから過剰の銅は除去され、表面CMPプロセスを用いて平坦化され、洗浄工程に続く。洗浄プロセス(CMP後洗浄)の最終点は、CMP工程によって金属を十分にエッチングしない半導体加工物表面、表面の堆積残り、または半導体加工物への十分な汚染を被ることから放置された残留物を除去することである。さらに、化学作用のエッチング、電蝕または光導入腐食のような種々のメカニズムによる腐食から金属表面を保護することが望ましい。金属表面腐食は、金属凹部および金属ラインを細くすることをもたらす。アルカリスラリーの中性は、しばしば銅およびバリアCMPに有益であるので、研磨粒子が高い電荷を持ち、かつ十分に除去できるアルカリpH状況で効果的である洗浄液を有することが望ましい。アルカリ化学製品は、ブラシスクラバーまたはCMP後洗浄用メガソニック洗浄ユニットにおいてしばしば有益である。
この発明は、金属、特に銅を含む半導体基板の化学機械平坦化(CMP)後に用いられる洗浄化学製品に関する。アルカリ化学製品は、スラリー粒子およびウェハ表面からの有機残留物の除去のためのブラシスクラバーまたはメガソニック洗浄ユニットにしばしば有用である。本発明は、金属を腐食から保護し、金属表面の酸化を防ぎ、パーティクルを十分に除去し、誘電体表面から金属を除去し、CMP工程前のpHに近づけ、かつ半導体表面を汚染しないための要求を満足する半導体加工物を洗浄する洗浄液の組成物である。さらに、金属表面を洗浄、保護することは単一溶液で単一工程にて完結される。
本発明は、例示目的のためおよび本発明の範囲を制限するように解釈されるべきでない以下の実施例を参照してより詳細に説明する。
本発明の化学製品は、商業的に入手可能なアルカリCMP後洗浄剤と比較される腐食を決定するために電気化学インピーダンス分光分析法(EIS)によって試験された。ブランケット式銅ウェハは、化学製品の希釈液に浸漬され、電気化学的セルに接続される。開回路電位は、各化学製品に曝されたウェハに対して安定した状態の条件を決定するために時間の関数として測定される。一度安定した状態の条件が見つけられると、AC電圧が各ウェハに供給され、各化学製品の腐食速度および抵抗値の情報を与える抵抗値および容量値が得られた。本発明の好ましい形態の腐食抵抗は、25,843Ω−cm2として測定された。商業的に入手可能な製品の腐食抵抗は、19,226Ω−cm2として測定された。これらの結果は、本発明が商業的に入手可能なアルカリCMP後洗浄液に比べた場合、より高い銅腐食抵抗を供することが明瞭に証明する。より高い銅腐食抵抗は、相互接続ラインからの銅消失を最小化するのみならず、銅ライン表面への酸化物および水酸化物のような低導電性種の形成を妨げる。
第2検討において、パターンCu/low kおよびブランケット式銅ウェハは、前記銅ラインを攻撃する各化学薬品の攻撃性を決定するために本発明の化学製品のみならず商業的に入手可能なそれに曝される。十分な洗浄にとって、化学製品は誘電体からの除去を促進するために溶液中の銅錯体を形成するときに効果的であるべきであるが、銅ラインからの過度な物質の除去を防ぐために腐食阻止と均衡すべきである。この挙動を検討するために、パターン化された銅ウェハ片はアルカリ化学製品の希釈液に5分間曝され、それから原子間力顕微鏡(AFM)によって分析される。ウェハ上の銅領域は、それから化学製品による粗引き量を決定するために走査することができる。図1は、本発明の好ましい形態(テトラメチルアンモニウムヒドロキシド+エチレンジアミン+アセトアミドフェノール+バイニリン)の1:20希釈に曝されたパターン化されたウェハ上の銅パッドの20×20μmAFM走査を示す。化学製品曝露に続くこの領域のRMS表面粗さは、初期値1.0nmに比べて1.6nmであり、前記化学製品が表面を僅かに粗引きし、かつ銅粒子に照準しているが銅を実質的に攻撃していないことを証明する。曝露の間溶液に溶解された銅のICPMS測定と結合される情報は本発明の化学製品を商業的に入手可能な製品と比較する方法を与える。
Claims (28)
- (a)洗浄剤、ここで洗浄剤はテトラアルキルアンモニウムヒドロキシドを含有する;
(b)キレート剤、ここでキレート剤はエチレンジアミンを含有する;および
(c)腐食阻止化合物、ここで腐食阻止化合物はアセトアミドフェノールを含有する、
を含む少なくとも1つのCMP製造工程後の半導体加工物洗浄用後CMP洗浄組成物。 - 前記腐食阻止化合物は、アセトアミドフェノールと、アミノフェノール、カフェー酸、ケイ皮酸、システイン、ジヒドロキシ安息香酸、グルコース、イミダゾール、メルカプトチアゾリン、メルカプトエタノール、メルカプトプロピオン酸、メルカプトベンゾチアゾール、メルカプトメチルイミダゾール、メトキシフェノール、タンニン酸、チオグリセロール、チオサルチル酸、トリアゾール、バニリンおよびバニリン酸からなる群から選ばれる少なくとも1つの他の化学薬品との混合物を含む請求項1記載の組成物。
- さらに希釈液を含む請求項1記載の組成物。
- さらに表面活性剤を含む請求項1記載の組成物。
- 前記表面活性剤は、非イオン性、陽イオン性、陰イオン性、両性イオン性および両性の界面活性剤およびこれらの混合物からなる群から選ばれる請求項4記載の組成物。
- pHは、約9から約13の間である請求項1記載の組成物。
- 前記腐食阻止化合物は、さらにバニリンを含む請求項1記載の組成物。
- さらに希釈液を含む請求項7記載の組成物。
- さらに表面活性剤を含む請求項7記載の組成物。
- 前記表面活性剤は、非イオン性、陽イオン性、陰イオン性、両性イオン性および両性の界面活性剤およびこれらの混合物からなる群から選ばれる請求項9記載の組成物。
- 前記腐食阻止化合物は、さらにメトキシフェノールを含む請求項1記載の組成物。
- 前記腐食阻止化合物は、さらにバニリンを含む請求項11記載の組成物。
- さらに希釈液を含む請求項11記載の組成物。
- さらに表面活性剤を含む請求項12記載の組成物。
- 前記表面活性剤は、非イオン性、陽イオン性、陰イオン性、両性イオン性および両性の界面活性剤およびこれらの混合物からなる群から選ばれる請求項14記載の組成物。
- 少なくとも1つのCMP製造工程後の半導体加工物を洗浄する方法であって、
(a)半導体加工物を準備する工程、および
(b)少なくとも1つのCMP製造工程の後に前記半導体加工物を洗浄液と接触する工程で、前記液は
(i)洗浄剤、ここで洗浄剤はテトラアルキルアンモニウムヒドロキシドを含有する;
(ii)キレート剤、ここでキレート剤はエチレンジアミンを含有する;および
(iii)腐食阻止化合物、ここで腐食阻止化合物はアセトアミドフェノールを含有する、を含む、
を含む方法。 - 前記半導体加工物は、金属ライン、埋め込み材料および誘電体を含む請求項16記載の方法。
- 前記金属ラインは、銅を含む請求項17記載の方法。
- 前記埋め込み材料は、Ta,TaN,Ti,TiN,WおよびWNからなる群から選ばれる材料を含む請求項18記載の方法。
- 前記腐食阻止化合物は、さらにメトキシフェノールを含む請求項16記載の方法。
- 前記腐食阻止化合物は、さらにバニリンを含む請求項16記載の方法。
- 前記腐食阻止化合物は、メトキシフェノールを含む請求項16記載の方法。
- 前記腐食阻止化合物は、さらにバニリンを含む請求項22記載の方法。
- 前記洗浄液は、さらに希釈剤を含む請求項16記載の方法。
- 前記洗浄液は、さらに表面活性剤を含む請求項16記載の方法。
- 前記表面活性剤は、非イオン性、陽イオン性、陰イオン性、両性イオン性および両性の界面活性剤およびこれらの混合物からなる群から選ばれる請求項25記載の方法。
- (a)洗浄剤、ここで洗浄剤はアンモニウムヒドロキシドおよびテトラアルキルアンモニウムヒドロキシドからなる群から選ばれる;
(b)キレート剤、ここでキレート剤はエチレンジアミンおよびイソプロパノールアミンからなる群から選ばれる;および
(c)腐食阻止化合物、ここで腐食阻止化合物はアセトアミドフェノールおよびメトキシフェノールからなる群から選ばれる、
を含む少なくとも1つのCMP製造工程後の半導体加工物洗浄用後CMP洗浄組成物。 - 前記キレート剤は、イソプロパノールアミンおよびグルコン酸の混合物を含む請求項27記載の組成物。
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-
2004
- 2004-10-01 US US10/956,273 patent/US7435712B2/en active Active
-
2005
- 2005-01-12 CN CNA2005800019365A patent/CN1906287A/zh active Pending
- 2005-01-12 EP EP05702248A patent/EP1720965B1/en not_active Not-in-force
- 2005-01-12 DE DE602005014746T patent/DE602005014746D1/de active Active
- 2005-01-12 AT AT05702248T patent/ATE432974T1/de not_active IP Right Cessation
- 2005-01-12 JP JP2006552706A patent/JP4550838B2/ja not_active Expired - Fee Related
- 2005-01-12 KR KR1020067013345A patent/KR101087916B1/ko active IP Right Grant
- 2005-01-12 WO PCT/IB2005/000081 patent/WO2005085408A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN1906287A (zh) | 2007-01-31 |
KR20060126527A (ko) | 2006-12-07 |
US20050181961A1 (en) | 2005-08-18 |
DE602005014746D1 (de) | 2009-07-16 |
US7435712B2 (en) | 2008-10-14 |
JP2007525836A (ja) | 2007-09-06 |
ATE432974T1 (de) | 2009-06-15 |
WO2005085408A1 (en) | 2005-09-15 |
EP1720965B1 (en) | 2009-06-03 |
KR101087916B1 (ko) | 2011-11-30 |
EP1720965A1 (en) | 2006-11-15 |
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