JP4550540B2 - Sample stage and ion sputtering equipment - Google Patents

Sample stage and ion sputtering equipment Download PDF

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JP4550540B2
JP4550540B2 JP2004292730A JP2004292730A JP4550540B2 JP 4550540 B2 JP4550540 B2 JP 4550540B2 JP 2004292730 A JP2004292730 A JP 2004292730A JP 2004292730 A JP2004292730 A JP 2004292730A JP 4550540 B2 JP4550540 B2 JP 4550540B2
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cam
sample stage
sample
rotates
ion sputtering
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JP2006104518A (en
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浩司 石田
基英 浮穴
健次 黒澤
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Hitachi High Tech Corp
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Description

本発明は、試料を回転可能に保持する試料台に関し、特に、イオンスパッタ装置に使用して好適な試料台に関する。   The present invention relates to a sample stage for holding a sample rotatably, and more particularly to a sample stage suitable for use in an ion sputtering apparatus.

図4に示すようにイオンスパッタ装置では、真空室20内に試料6を保持するための回転可能なテーブル1を有する試料台が配置され、試料6の真上にイオン源21が配置されている。表面の凹凸が大きい試料6の場合、試料の表面に対するイオン粒子線22の照射角が一定にならない。図5に示すように、試料6の表面の被膜23の厚さは均一にならない。従って、傾斜可能な試料台が提案されている。   As shown in FIG. 4, in the ion sputtering apparatus, a sample stage having a rotatable table 1 for holding the sample 6 is disposed in the vacuum chamber 20, and an ion source 21 is disposed immediately above the sample 6. . In the case of the sample 6 having a large surface unevenness, the irradiation angle of the ion particle beam 22 with respect to the surface of the sample is not constant. As shown in FIG. 5, the thickness of the film 23 on the surface of the sample 6 is not uniform. Therefore, a tiltable sample stage has been proposed.

特開平10-121237号公報に記載されたスパッタ装置では、被処理基板を載置する基板ホルダが傾斜可能でしかも回転可能に配設されている。しかしながら、この例では、傾斜角は測定毎に設定しなければならない。特開平5-242801号に記載された蒸着装置では、被蒸着部材の蒸着膜形成面に対して所定角度に傾斜した蒸着源を支持して首振り回転させる首振り機構が設けられている。しかしながら、この例でも、傾斜角は測定毎に設定しなければならない。特開平6-57423号公報に記載された成膜装置では、ホルダ内面が水平線に対して所定の角度だけ傾斜させホルダ内面を回転させる機構が設けられている。この例では、傾斜角は傾斜できない。   In the sputtering apparatus described in Japanese Patent Application Laid-Open No. 10-121237, a substrate holder on which a substrate to be processed is placed is tiltable and rotatable. However, in this example, the tilt angle must be set for each measurement. In the vapor deposition apparatus described in Japanese Patent Application Laid-Open No. 5-228801, a swing mechanism is provided that supports and rotates a vapor deposition source inclined at a predetermined angle with respect to a vapor deposition film forming surface of a vapor deposition member. However, even in this example, the tilt angle must be set for each measurement. In the film forming apparatus described in Japanese Patent Laid-Open No. 6-57423, there is provided a mechanism for rotating the holder inner surface by tilting the inner surface of the holder by a predetermined angle with respect to the horizontal line. In this example, the tilt angle cannot be tilted.

特開平10-121237号公報Japanese Patent Laid-Open No. 10-121237 特開平5-242801号公報Japanese Patent Laid-Open No. 5-228801 特開平6-57423号公報JP-A-6-57423

従来の装置では、試料台は傾斜するがその傾斜角は一定である。従って、複雑な凹凸の表面に均一な被膜を形成することはできない。例えば、凸部は容易にスパッタが可能であるが凹部の窪みの奥にはスパッタ粒子が届かない。   In the conventional apparatus, the sample stage is tilted, but the tilt angle is constant. Therefore, it is impossible to form a uniform film on the surface of complicated irregularities. For example, the projection can be easily sputtered, but the sputtered particles do not reach the back of the recess.

本発明の目的は、簡単な装置によって試料の表面の角度を自由に変化させることができる手段を提供することにある。   An object of the present invention is to provide means capable of freely changing the angle of the surface of a sample with a simple apparatus.

試料台は、試料を保持するテーブルと、該テーブルを回転自在に支持する支持装置と、上記テーブルに係合しているカムと、該カムを回転させる回転駆動装置と、を有し、上記カムが回転すると、上記テーブルは中心軸線周りに回転すると同時に水平面に対して傾斜するように構成されている。   The sample stage includes a table for holding a sample, a support device for rotatably supporting the table, a cam engaged with the table, and a rotation driving device for rotating the cam. As the table rotates, the table rotates around the central axis and simultaneously tilts with respect to the horizontal plane.

本発明によれば、凹凸がある試料でも均一な膜厚のスパッタコーティングを実現することが可能である。   According to the present invention, it is possible to realize sputter coating with a uniform film thickness even for a sample with unevenness.

以下、図面を用いて本発明の実施例を説明する。図1(a)は本発明による試料台の上面図、図1(b)は正面図、図1(c)は右側面図である。本例の試料台は、テーブル1、垂直軸2、球面軸受7、カム3、カム軸4、及び、回転駆動装置5を有する。テーブル1の上面1Aには、複数の試料6が接着等の方法で載置されている。図1(b)に示すように、テーブル1は、垂直軸2の上端に設けられた球面軸受7によって、回転自在に保持されている。カム3はテーブル1の下面1Bの外周部に係合している。即ち、カム3とテーブル1の下面1Bによってカム機構が構成されている。カム3とテーブル1の下面1Bは摩擦接触によって係合してよいが、テーブル1の下面1Bに設けられたラックとカム3のピニオンからなる歯車機構によって係合してよい。   Embodiments of the present invention will be described below with reference to the drawings. 1A is a top view of a sample stage according to the present invention, FIG. 1B is a front view, and FIG. 1C is a right side view. The sample stage of this example includes a table 1, a vertical shaft 2, a spherical bearing 7, a cam 3, a cam shaft 4, and a rotation drive device 5. A plurality of samples 6 are placed on the upper surface 1A of the table 1 by a method such as adhesion. As shown in FIG. 1B, the table 1 is rotatably held by a spherical bearing 7 provided at the upper end of the vertical shaft 2. The cam 3 is engaged with the outer peripheral portion of the lower surface 1B of the table 1. That is, the cam mechanism is constituted by the cam 3 and the lower surface 1B of the table 1. The cam 3 and the lower surface 1B of the table 1 may be engaged by frictional contact, but may be engaged by a gear mechanism comprising a rack provided on the lower surface 1B of the table 1 and a pinion of the cam 3.

カム3はカム軸4に装着され、カム軸4は、回転駆動装置5に接続されている。回転駆動装置5は、カム軸4を回転させるものであればどのようなももであってもよく、例えば、モータと歯車機構、モータと摩擦伝動機構等であってもよい。   The cam 3 is mounted on a cam shaft 4, and the cam shaft 4 is connected to a rotation drive device 5. The rotation drive device 5 may be anything as long as it rotates the cam shaft 4, and may be, for example, a motor and a gear mechanism, a motor and a friction transmission mechanism, or the like.

回転駆動装置5によってカム軸4が回転し、カム3が回転すると、カム3とテーブル1の下面1Bからなるカム機構によって、テーブル1は、球面軸受7によって、テーブル1に垂直な且つテーブルの中心を通る回転軸線周りに回転すると同時に傾斜する。即ち、テーブルの回転軸線は、垂直軸線に対して傾斜し、テーブル1は水平面に対して傾斜する。   When the cam shaft 4 is rotated by the rotation driving device 5 and the cam 3 is rotated, the table 1 is perpendicular to the table 1 by the spherical bearing 7 and the center of the table by the cam mechanism including the cam 3 and the lower surface 1B of the table 1. Rotate around the axis of rotation through and tilt at the same time. That is, the rotation axis of the table is inclined with respect to the vertical axis, and the table 1 is inclined with respect to the horizontal plane.

以下に、カム3の外周が楕円である場合を説明する。この楕円の長径を2a、短径を2bとすると、楕円の外周の長さはπ(a+b)である。   Below, the case where the outer periphery of the cam 3 is an ellipse is demonstrated. When the major axis of the ellipse is 2a and the minor axis is 2b, the length of the outer periphery of the ellipse is π (a + b).

テーブル1の下面1Bのカム3と係合する点をxとする。テーブル1の回転軸線から係合点xまでの距離をRとする。テーブル1が1回転すると、係合点xは半径Rの円を描き、その軌跡は2πRとなる。   Let x be the point that engages with the cam 3 on the lower surface 1B of the table 1. Let R be the distance from the rotation axis of the table 1 to the engagement point x. When the table 1 rotates once, the engagement point x draws a circle with a radius R, and its locus becomes 2πR.

本例では、係合点xの軌跡2πRと、楕円の外周円π(a+b)の比、2πR/π(a+b)を適当な値に選択する。ここで、例えば、1回のスパッタリング処理では、テーブルを1回転のみさせると仮定する。2πR/π(a+b)=2/1の場合、テーブル1が1回転する間に、カム3は2回転する。2πR/π(a+b)=n/1の場合、テーブル1が1回転する間に、カム3はn回転する。   In this example, the ratio 2πR / π (a + b) of the locus 2πR of the engagement point x and the outer circumferential circle π (a + b) of the ellipse is selected to an appropriate value. Here, for example, it is assumed that the table is rotated only once in one sputtering process. When 2πR / π (a + b) = 2/1, the cam 3 rotates twice while the table 1 rotates once. When 2πR / π (a + b) = n / 1, the cam 3 rotates n times while the table 1 rotates once.

nは自然数であってもよく、自然数以外の数であってもよい。nが自然数の場合、テーブル1が1回転すると、カム3は最初の回転角、即ち、最初の位相に戻る。しかしながら、自然数以外の数の場合、テーブル1が1回転しても、カム3は最初の位相に戻らない。   n may be a natural number or a number other than a natural number. When n is a natural number, when the table 1 rotates once, the cam 3 returns to the initial rotation angle, that is, the initial phase. However, when the number is other than the natural number, the cam 3 does not return to the initial phase even if the table 1 rotates once.

例えば、n=1/0.49≒2.04の場合、テーブル1が1回転する間に、カム3は2.04回転する。即ち、カム3が2回転したとき、テーブル1は未だ1回転していない。   For example, when n = 1 / 0.49≈2.04, the cam 3 rotates 2.04 while the table 1 rotates once. That is, when the cam 3 makes two revolutions, the table 1 has not yet made one revolution.

例えば、n=1/0.51≒1.96の場合、テーブル1が1回転する間に、カム3は1.96回転する。即ち、カム3が2回転したとき、テーブル1は1回転を超えている。   For example, when n = 1 / 0.51≈1.96, the cam 3 rotates 1.96 while the table 1 rotates once. That is, when the cam 3 rotates twice, the table 1 exceeds one rotation.

凹凸のある試料に、スパッタリング処理によって、均一な膜厚を形成するには、nは自然数でないほうがよい。   In order to form a uniform film thickness on an uneven sample by sputtering, n should not be a natural number.

図2を参照してテーブル1の回転角と傾斜角の関係を説明する。テーブル1の回転軸線、即ち、球面軸受7を原点Oとし、水平方向にx軸、垂直方向にy軸をとり、x軸の正の方向から反時計方向に傾斜角を測る。図2(a)及び図2(b)は、カム3の楕円の長径とテーブル1の下面1Bが係合している状態を示し、テーブル1の傾斜角は最大である。図2(c)及び図2(d)はカム3の楕円の短径とテーブル1の下面1Bが係合している状態を示し、テーブル1の傾斜角は最小である。   The relationship between the rotation angle and the tilt angle of the table 1 will be described with reference to FIG. The rotation axis of the table 1, that is, the spherical bearing 7 is set as the origin O, the horizontal axis is the x axis, the vertical direction is the y axis, and the tilt angle is measured counterclockwise from the positive direction of the x axis. 2 (a) and 2 (b) show a state in which the major axis of the ellipse of the cam 3 is engaged with the lower surface 1B of the table 1, and the inclination angle of the table 1 is the maximum. 2 (c) and 2 (d) show a state where the minor axis of the ellipse of the cam 3 is engaged with the lower surface 1B of the table 1, and the inclination angle of the table 1 is the smallest.

カム3が1回転する間に、テーブル1の傾斜角は最大からゼロに変化し、ゼロから最小に変化し、更にゼロに戻る。即ち、カム3が1回転する間に、図1に示すようにテーブル1の傾斜角がゼロとなる位置が2回ある。   While the cam 3 makes one revolution, the tilt angle of the table 1 changes from maximum to zero, changes from zero to minimum, and then returns to zero. That is, there are two positions where the tilt angle of the table 1 becomes zero as shown in FIG.

図3を参照して本発明による試料台の他の例を説明する。本例では、テーブル1の上側に、且つ、カム3が配置されている位置に、テーブル1を上から下へ押え付けるための押え手段10が設けられている。押え手段10は、下端の押え部材11とこの押え部材11を下方に押圧するばね12とを有する。押え部材11の先端は回転可能なロールが設けられてよい。こうして、押え手段10によってテーブル1を上から下に押し付けることにより、テーブル1の下面1Bとカム3の係合が確実となる。即ち、テーブル1の下面1Bとカム3が離れることが防止される。   Another example of the sample stage according to the present invention will be described with reference to FIG. In this example, a pressing means 10 for pressing the table 1 from the top to the bottom is provided on the upper side of the table 1 and at the position where the cam 3 is disposed. The presser means 10 includes a presser member 11 at the lower end and a spring 12 that presses the presser member 11 downward. The tip of the pressing member 11 may be provided with a rotatable roll. Thus, by pressing the table 1 from the top to the bottom by the pressing means 10, the engagement between the lower surface 1B of the table 1 and the cam 3 is ensured. That is, the lower surface 1B of the table 1 and the cam 3 are prevented from separating.

ここでは、カム3の外周が楕円の場合を説明したが、楕円以外の形状であってもよいことは勿論である。   Although the case where the outer periphery of the cam 3 is an ellipse has been described here, it is needless to say that the shape may be other than an ellipse.

本例の試料台はイオンスパッタ装置に適用できるが、他の薄膜形成装置、微細加工装置等に適用可能である。   The sample stage of this example can be applied to an ion sputtering apparatus, but can be applied to other thin film forming apparatuses, microfabrication apparatuses, and the like.

以上、本発明の例を説明したが、本発明は上述の例に限定されるものではなく、特許請求の範囲に記載された発明の範囲にて様々な変更が可能であることは当業者に理解されよう。   The example of the present invention has been described above, but the present invention is not limited to the above-described example, and various modifications can be made by those skilled in the art within the scope of the invention described in the claims. It will be understood.

本発明による試料台の例を示す図である。It is a figure which shows the example of the sample stand by this invention. 本発明による試料台のテーブルの傾斜角とカムの回転角の関係を示す図である。It is a figure which shows the relationship between the inclination angle of the table of the sample stand by this invention, and the rotation angle of a cam. 本発明による試料台の他の例を示す図である。It is a figure which shows the other example of the sample stand by this invention. イオンスパッタ装置の概略を示す図である。It is a figure which shows the outline of an ion sputtering device. 試料表面の被膜の構造を説明するための図である。It is a figure for demonstrating the structure of the film of the sample surface.

符号の説明Explanation of symbols

1…テーブル、2…垂直軸、3…カム、4…カム軸、5…回転駆動装置、6…試料、10…押え手段、11…押え部材、12…ばね DESCRIPTION OF SYMBOLS 1 ... Table, 2 ... Vertical axis | shaft, 3 ... Cam, 4 ... Cam shaft, 5 ... Rotation drive device, 6 ... Sample, 10 ... Pressing means, 11 ... Pressing member, 12 ... Spring

Claims (4)

試料を保持するテーブルと、該テーブルを回転自在に支持する支持装置と、上記テーブルに係合しているカムと、該カムを回転させる回転駆動装置と、を有し、上記カムが回転すると、上記テーブルは中心軸線周りに回転すると同時に水平面に対して傾斜するように構成されていることを特徴とするイオンスパッタ装置に使用される試料台。   A table that holds the sample; a support device that rotatably supports the table; a cam that is engaged with the table; and a rotation drive device that rotates the cam; and when the cam rotates, A sample stage used in an ion sputtering apparatus, wherein the table is configured to rotate about a central axis and simultaneously tilt with respect to a horizontal plane. 請求項1記載のイオンスパッタ装置に使用される試料台において、上記テーブルが1回転する間に、上記カムはn回転するとき、上記nは自然数ではないことを特徴とするイオンスパッタ装置に使用される試料台。 2. The sample stage used in the ion sputtering apparatus according to claim 1, wherein the n is not a natural number when the cam rotates n times while the table rotates once. Sample stage. 請求項1記載のイオンスパッタ装置に使用される試料台において、上記テーブルを上記カムに押え付ける押え手段が設けられていることを特徴とするイオンスパッタ装置に使用される試料台。 2. The sample stage used in the ion sputtering apparatus according to claim 1, further comprising presser means for pressing the table against the cam. 請求項1〜4のいずれか1項に記載の試料台と、該試料台を収容する真空室と、試料表面にスパッタリングする材料のターゲットと、該ターゲットに電圧を印加する電源と、を有するイオンスパッタ装置。   An ion comprising: the sample stage according to any one of claims 1 to 4, a vacuum chamber that accommodates the sample stage, a target of a material to be sputtered on the sample surface, and a power source that applies a voltage to the target. Sputtering device.
JP2004292730A 2004-10-05 2004-10-05 Sample stage and ion sputtering equipment Expired - Fee Related JP4550540B2 (en)

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JP5008434B2 (en) * 2007-03-20 2012-08-22 株式会社アルバック Powder stirring mechanism, method for producing metal fine particle-supported powder, and catalyst for fuel cell
US9812349B2 (en) * 2015-12-01 2017-11-07 Lam Research Corporation Control of the incidence angle of an ion beam on a substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59219559A (en) * 1983-05-27 1984-12-10 Hitachi Ltd Cam mechanism
JPS61213368A (en) * 1985-03-20 1986-09-22 Hitachi Maxell Ltd Vacuum film forming device
JPH09228027A (en) * 1996-02-23 1997-09-02 Ntn Corp Method for coating sphere with hard carbon film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59219559A (en) * 1983-05-27 1984-12-10 Hitachi Ltd Cam mechanism
JPS61213368A (en) * 1985-03-20 1986-09-22 Hitachi Maxell Ltd Vacuum film forming device
JPH09228027A (en) * 1996-02-23 1997-09-02 Ntn Corp Method for coating sphere with hard carbon film

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