JP4549996B2 - Laser irradiation device - Google Patents

Laser irradiation device Download PDF

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JP4549996B2
JP4549996B2 JP2006094484A JP2006094484A JP4549996B2 JP 4549996 B2 JP4549996 B2 JP 4549996B2 JP 2006094484 A JP2006094484 A JP 2006094484A JP 2006094484 A JP2006094484 A JP 2006094484A JP 4549996 B2 JP4549996 B2 JP 4549996B2
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laser beam
laser
irradiation region
reflector
axis direction
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JP2007273539A (en
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陵太郎 富樫
俊夫 井波
純一 次田
秀晃 草間
直之 小林
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Japan Steel Works Ltd
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Priority to TW096101711A priority patent/TW200737352A/en
Priority to PCT/JP2007/000079 priority patent/WO2007116576A1/en
Priority to DE112007000735T priority patent/DE112007000735T5/en
Priority to KR1020087023807A priority patent/KR101028598B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B23K26/0821—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Semiconductor Lasers (AREA)

Description

この発明は、レーザ照射装置に関し、さらに詳しくは、帯状照射領域を長軸方向に高速に動かす位置制御を容易に行うことが出来るレーザ照射装置に関する。   The present invention relates to a laser irradiation apparatus, and more particularly to a laser irradiation apparatus capable of easily performing position control for moving a belt-shaped irradiation region at a high speed in the long axis direction.

従来、帯状照射領域を有する光線ビームを被処理基板に照射する際に、帯状照射領域の短軸方向に光線ビームを走査的に移動すると共に帯状照射領域の長軸方向に帯状照射領域を振動させる半導体装置の製造方法が知られている（例えば特許文献１参照。）。
特公平０４−１０２１６号公報 Conventionally, when irradiating a substrate with a light beam having a belt-shaped irradiation region, the light beam is scanned in the short axis direction of the belt-shaped irradiation region and the belt-shaped irradiation region is vibrated in the long axis direction of the belt-shaped irradiation region. A method for manufacturing a semiconductor device is known (see, for example, Patent Document 1).
Japanese Examined Patent Publication No. 04-10216

上記従来技術では、帯状照射領域を長軸方向に振動させるために、被処理基板を保持するＸＹステージまたはカーボン・ヒータを動かしている。
しかし、ＸＹステージまたはカーボン・ヒータは質量が大きいため、応答が遅く、高速に位置制御することが難しい問題点がある。
そこで、この発明の目的は、帯状照射領域を長軸方向に高速に動かす位置制御を容易に行うことが出来るレーザ照射装置を提供することにある。 In the above prior art, an XY stage or a carbon heater that holds the substrate to be processed is moved in order to vibrate the belt-shaped irradiation region in the long axis direction.
However, since the XY stage or the carbon heater has a large mass, the response is slow and it is difficult to control the position at high speed.
Accordingly, an object of the present invention is to provide a laser irradiation apparatus capable of easily performing position control for moving a belt-shaped irradiation region at a high speed in the major axis direction.

第１の観点では、本発明は、レーザビーム（Ｂ１)をパルス出力するレーザ発振器（１）と、前記レーザビーム（Ｂ１）を反射する反射器（２）と、前記レーザビーム（Ｂ１）が入射する前記反射器（２）の反射面（２ｂ）の前記レーザビーム（Ｂ１）に対する角度（θ）または位置の変化により反射ビーム（Ｂ２）が動く方向を長軸方向とする帯状照射領域（４）に前記反射ビーム（Ｂ２）を整形し半導体基板（Ｓ）に照射する光学系（３）と、前記半導体基板（Ｓ）を保持して前記帯状照射領域（４）の短軸方向に移動しうる移動台（５）と、前記反射器（２）の角度または位置を変える反射器駆動手段（６）と、帯状照射領域の長軸方向の所定範囲内で帯状照射領域の位置を変えるために前記レーザ発振器（１）でレーザビーム（Ｂ１)をパルス出力するタイミングと前記反射器駆動手段（６）で前記反射器（２）の角度または位置を変えるタイミングの調整を行うタイミング制御手段（８）とを具備することを特徴とするレーザ照射装置（１００）を提供する。
上記第１の観点によるレーザ照射装置（１００）では、反射器（２）を動かすが、従来技術におけるＸＹステージに相当する移動台（５）または従来技術におけるカーボン・ヒータに相当するレーザ発振器（１）や光学系（３）に比べて反射器（２）の質量が小さいため、高速に動かす位置制御が容易になる。そして、レーザ発振器（１）でレーザビーム（Ｂ１)をパルス出力するタイミングと反射器駆動手段（６）で反射器（２）の角度または位置を変えるタイミングの調整をタイミング制御手段（８）で行うことにより、帯状照射領域の長軸方向の所定範囲内で帯状照射領域の位置を変えることが出来る。 In a first aspect, the present invention relates to a laser oscillator (1) that outputs a pulse of a laser beam (B1), a reflector (2) that reflects the laser beam (B1), and the laser beam (B1) incident thereon. A strip-shaped irradiation region (4) whose major axis is the direction in which the reflected beam (B2) moves due to a change in angle (θ) or position of the reflecting surface (2b) of the reflector (2) with respect to the laser beam (B1) An optical system (3) for shaping the reflected beam (B2) and irradiating the semiconductor substrate (S), and holding the semiconductor substrate (S) and moving in the minor axis direction of the belt-like irradiation region (4) The movable table (5), reflector driving means (6) for changing the angle or position of the reflector (2), and the belt-like irradiation region in order to change the position of the belt-like irradiation region within a predetermined range in the major axis direction of the belt-like irradiation region Laser beam (B1) is emitted by laser oscillator (1) A laser irradiation apparatus comprising: a timing control means (8) for adjusting a pulse output timing and a timing for changing an angle or a position of the reflector (2) by the reflector driving means (6). 100).
In the laser irradiation apparatus (100) according to the first aspect, the reflector (2) is moved, but the movable stage (5) corresponding to the XY stage in the prior art or the laser oscillator (1) corresponding to the carbon heater in the prior art. ) And the optical system (3) have a smaller mass of the reflector (2), so that the position control can be easily performed at a high speed. The timing control means (8) adjusts the timing at which the laser beam (B1) is pulsed by the laser oscillator (1) and the timing at which the reflector driving means (6) changes the angle or position of the reflector (2). Thus, the position of the band-shaped irradiation region can be changed within a predetermined range in the major axis direction of the band-shaped irradiation region.

第２の観点では、本発明は、トリガ（Ｇ）に応じてレーザビーム（Ｂ１)をパルス出力するレーザ発振器（１）と、前記レーザビーム（Ｂ１）を反射する回転多角形ミラー（２）と、前記レーザビーム（Ｂ１）が入射する前記回転多角形ミラー（２）の反射面（２ｂ）への前記レーザビーム（Ｂ１）の入射角（θ）の変化により反射ビーム（Ｂ２）が振れる方向を長軸方向とする帯状照射領域（４）に前記反射ビーム（Ｂ２）を整形し半導体基板（Ｓ）に照射する光学系（３）と、前記半導体基板（Ｓ）を保持して前記帯状照射領域（４）の短軸方向に移動しうる移動台（５）と、前記回転多角形ミラー（２）を一定速度で回転させる回転駆動手段（６）と、前記回転多角形ミラー（２）の回転位相情報（Ｑ）を出力する回転位相検出手段（７）と、前記回転位相情報（Ｑ）に基づいて前記トリガ（Ｇ）の出力タイミングを所定の時間範囲内で変化させて前記入射角（θ）を所定角度範囲内で変化させるタイミング制御手段（８）とを具備することを特徴とするレーザ照射装置（１００）を提供する。
上記第２の観点によるレーザ照射装置（１００）では、ミラーの角度を変えたい速度のミラー数分の一の速さで且つ一定速度で回転多角形ミラー（２）を回転させればよいため、実施が容易である。そして、レーザ発振器（１）でレーザビーム（Ｂ１)をパルス出力するタイミングを回転多角形ミラー（２）の回転位相に合わせて変えるためタイミング調整も実施が容易である。よって、帯状照射領域の長軸方向の所定範囲内で帯状照射領域の位置を高速に容易に変えることが出来る。 In a second aspect, the present invention relates to a laser oscillator (1) that outputs a laser beam (B1) in response to a trigger (G), and a rotating polygon mirror (2) that reflects the laser beam (B1). The direction in which the reflected beam (B2) swings due to the change in the incident angle (θ) of the laser beam (B1) to the reflecting surface (2b) of the rotating polygon mirror (2) on which the laser beam (B1) is incident. An optical system (3) for shaping the reflected beam (B2) in a strip-shaped irradiation region (4) in the major axis direction and irradiating the semiconductor substrate (S), and holding the semiconductor substrate (S), the strip-shaped irradiation region (4) The movable table (5) capable of moving in the short axis direction, the rotation driving means (6) for rotating the rotating polygon mirror (2) at a constant speed, and the rotation of the rotating polygon mirror (2) Rotation phase detection means (7) for outputting phase information (Q) And a timing control means (8) for changing the output angle of the trigger (G) within a predetermined time range based on the rotational phase information (Q) and changing the incident angle (θ) within a predetermined angle range. A laser irradiation apparatus (100) is provided.
In the laser irradiation apparatus (100) according to the second aspect, the rotating polygon mirror (2) may be rotated at a constant speed and at a speed equal to the number of mirrors at a speed at which the mirror angle is desired to be changed. Easy to implement. Since the timing at which the laser beam (B1) is pulse-outputted by the laser oscillator (1) is changed in accordance with the rotational phase of the rotating polygon mirror (2), timing adjustment is also easy. Therefore, the position of the belt-like irradiation region can be easily changed at high speed within a predetermined range in the major axis direction of the belt-like irradiation region.

この発明のレーザ照射装置によれば、帯状照射領域を長軸方向に高速に動かす位置制御を容易に行うことが出来るので、帯状照射領域の長軸方向のレーザビームの強度ムラや被処理基板の微小な凹凸に起因する帯状照射領域の長手方向の照射ムラを好適に抑制することが出来る。   According to the laser irradiation apparatus of the present invention, it is possible to easily perform position control for moving the belt-shaped irradiation region at a high speed in the long axis direction. Irradiation unevenness in the longitudinal direction of the belt-shaped irradiation region due to minute unevenness can be suitably suppressed.

以下、図に示す実施の形態によりこの発明をさらに詳細に説明する。なお、これによりこの発明が限定されるものではない。   Hereinafter, the present invention will be described in more detail with reference to embodiments shown in the drawings. Note that the present invention is not limited thereby.

図１は、実施例１に係るレーザ照射装置１００を示す構成説明図である。
このレーザ照射装置１００は、トリガＧに応じてレーザビームＢ１をパルス出力するレーザ発振器１と、レーザビームＢ１を反射する回転多角形ミラー２と、レーザビームＢ１が入射する回転多角形ミラー２の反射面２ｂへのレーザビームＢ１の入射角θの変化により反射ビームＢ２が振れる方向を長軸方向とする帯状照射領域４に反射ビームＢ２を整形し半導体基板Ｓに照射するためのホモジナイザー３ａ，ミラー３ｂおよびレンズ３ｃと、半導体基板Ｓを保持して帯状照射領域４の短軸方向に移動しうる移動台５と、回転多角形ミラー２を一定速度で回転させるモータ６と、回転多角形ミラー２の回転位相情報Ｑを出力するエンコーダ７と、回転位相情報Ｑに基づいてトリガＧの出力タイミングを所定の時間範囲内で変化させるタイミング制御回路８とを具備している。 FIG. 1 is a configuration explanatory diagram illustrating a laser irradiation apparatus 100 according to the first embodiment.
The laser irradiation apparatus 100 includes a laser oscillator 1 that outputs a laser beam B1 in response to a trigger G, a rotating polygon mirror 2 that reflects the laser beam B1, and a reflection of the rotating polygon mirror 2 on which the laser beam B1 is incident. A homogenizer 3a and a mirror 3b for shaping the reflected beam B2 in the strip-shaped irradiation region 4 whose major axis is the direction in which the reflected beam B2 swings due to the change in the incident angle θ of the laser beam B1 on the surface 2b and irradiating the semiconductor substrate S And a lens 3c, a moving base 5 that holds the semiconductor substrate S and can move in the minor axis direction of the belt-shaped irradiation region 4, a motor 6 that rotates the rotating polygon mirror 2 at a constant speed, and a rotating polygon mirror 2 An encoder 7 that outputs rotational phase information Q, and a timing that changes the output timing of the trigger G within a predetermined time range based on the rotational phase information Q And a control circuit 8.

回転多角形ミラー２の回転軸２ａは鉛直方向であり、回転多角形ミラー２は水平面内で回転する。レーザビームＢ１および反射ビームＢ２は水平方向である。一方、半導体基板Ｓは水平に置かれている。このため、ホモジナイザー３ａで長軸方向および短軸方向に強度を均一化した反射ビームＢ１の方向をミラー３ｂにより水平方向から鉛直方向に変えている。そして、かまぼこ形のレンズ３ｃで短軸方向について集光して半導体基板Ｓに照射している。   The rotation axis 2a of the rotating polygon mirror 2 is in the vertical direction, and the rotating polygon mirror 2 rotates in a horizontal plane. The laser beam B1 and the reflected beam B2 are in the horizontal direction. On the other hand, the semiconductor substrate S is placed horizontally. For this reason, the direction of the reflected beam B1 whose intensity is made uniform in the major axis direction and the minor axis direction by the homogenizer 3a is changed from the horizontal direction to the vertical direction by the mirror 3b. Then, the semi-axial direction is condensed by the semi-cylindrical lens 3c and the semiconductor substrate S is irradiated.

図２は、タイミング制御回路８の動作を説明するタイミングチャートである。
タイミング制御回路８は、回転位相情報Ｑに基づいて、入射角θが４５゜になるタイミングを示す４５゜パルスＱ’を生成する。
この４５゜パルスＱ’の周期τは、回転多角形ミラー２の１回転時間を回転多角形ミラー２のミラー数で除算した値になる。
なお、周期τは、レーザ発振器１でレーザビームＢ１をパルス出力する平均時間間隔に相当する。また、レーザ発振器１がレーザビームＢ１をパルス出力する時間つまりパルス幅は、周期τより短い。 FIG. 2 is a timing chart for explaining the operation of the timing control circuit 8.
Based on the rotation phase information Q, the timing control circuit 8 generates a 45 ° pulse Q ′ indicating the timing at which the incident angle θ becomes 45 °.
The period τ of the 45 ° pulse Q ′ is a value obtained by dividing one rotation time of the rotating polygon mirror 2 by the number of mirrors of the rotating polygon mirror 2.
The period τ corresponds to an average time interval at which the laser oscillator 1 outputs a pulse of the laser beam B1. Further, the time during which the laser oscillator 1 outputs the laser beam B1 as a pulse, that is, the pulse width is shorter than the period τ.

帯状照射領域４を長軸方向に動かしたい位置の数を「Ｍ＋１」とするとき、タイミング制御回路８は、０からＭまでの整数の一つｍをランダムに発生し、４５゜パルスＱ’より「τ＋（ｍ−Ｍ／２）δ／（Ｍ／２）」経過時にトリガＧを出力する。
時間δの間に反射面２ｂが回転する角度をαとするとき、入射角θは「４５゜−（ｍ−Ｍ／２）α／（Ｍ／２）」になる。
図２はＭ＝８の例であり、４５゜パルスＱ’より「τ＋（ｍ−４）δ／４」経過時にトリガＧを出力し、入射角θは「４５゜−（ｍ−４）α／４」になる。 When the number of positions where the strip-shaped irradiation region 4 is desired to be moved in the major axis direction is “M + 1”, the timing control circuit 8 randomly generates one m of integers from 0 to M, from 45 ° pulse Q ′. The trigger G is output when “τ + (m−M / 2) δ / (M / 2)” has elapsed.
When the angle at which the reflecting surface 2b rotates during the time δ is α, the incident angle θ is “45 ° − (m−M / 2) α / (M / 2)”.
FIG. 2 shows an example in which M = 8. When “τ + (m−4) δ / 4” elapses from the 45 ° pulse Q ′, the trigger G is output, and the incident angle θ is “45 ° − (m−4) α”. / 4 ".

図３は、帯状照射領域４の長軸方向の動きを示す上面図である。
（ａ）〜（ｉ）は、Ｍ＝８とした場合のｍ＝０〜ｍ＝８に対応している。
帯状照射領域４は、長軸方向照射範囲Ｒ内の９カ所の位置にランダムに動くことになる。
帯状照射領域４の長軸方向の長さをＬとするとき、帯状照射領域４を「（Ｒ−Ｌ）／２」だけ動かす入射角θの変化分がαに相当する。 FIG. 3 is a top view showing the movement of the belt-shaped irradiation region 4 in the long axis direction.
(A) to (i) correspond to m = 0 to m = 8 when M = 8.
The strip-shaped irradiation region 4 moves randomly to nine positions within the long-axis direction irradiation range R.
When the length in the major axis direction of the belt-shaped irradiation region 4 is L, a change in the incident angle θ that moves the belt-shaped irradiation region 4 by “(RL) / 2” corresponds to α.

実施例１のレーザ照射装置１００によれば、周期τのミラー数倍の時間で回転多角形ミラー２を１回転させればよいので、実施が容易である。また、レーザ発振器１でレーザビームＢ１をパルス出力する時間間隔は最短「τ−δ」になるが、可動部分がないので、これも実施が容易である。よって、帯状照射領域４の長軸方向の所定範囲Ｒ内で帯状照射領域４の位置を高速に動かすことが出来る。   According to the laser irradiation apparatus 100 of the first embodiment, the rotation polygon mirror 2 only needs to be rotated once in a time that is the number of mirrors of the period τ, so that the implementation is easy. Further, the time interval at which the laser oscillator 1 pulses the laser beam B1 is the shortest “τ−δ”, but this is also easy to implement because there is no moving part. Therefore, the position of the strip-shaped irradiation region 4 can be moved at a high speed within the predetermined range R in the major axis direction of the strip-shaped irradiation region 4.

４５゜パルスＱ’より「τ−δ」経過後から「τ＋δ」経過後までの時間範囲内でランダムにトリガＧを出力してもよい。   The trigger G may be output at random within the time range from the lapse of “τ−δ” to the lapse of “τ + δ” from the 45 ° pulse Q ′.

回転多角形ミラー２の代わりに、レーザビームＢ１の方向に往復振動するミラーを用いてもよい。この場合、振動位相に合わせてトリガＧの出力タイミングを変化させる。   Instead of the rotating polygon mirror 2, a mirror that reciprocates in the direction of the laser beam B1 may be used. In this case, the output timing of the trigger G is changed in accordance with the vibration phase.

回転多角形ミラー２の代わりに、所定角度範囲で揺動振動するガルバノミラーを用いてもよい。この場合、ガルバノミラーの揺動位相に合わせてトリガＧの出力タイミングを変化させる。   Instead of the rotating polygon mirror 2, a galvanometer mirror that oscillates and oscillates within a predetermined angle range may be used. In this case, the output timing of the trigger G is changed in accordance with the oscillation phase of the galvanometer mirror.

回転多角形ミラー２の代わりにガルバノミラーを用い、トリガＧを一定周期で出力し、トリガＧごとにガルバノミラーの角度を所定角度範囲でランダムに変化させてもよい。   A galvano mirror may be used instead of the rotating polygon mirror 2, the trigger G may be output at a constant period, and the angle of the galvano mirror may be changed randomly within a predetermined angle range for each trigger G.

この発明のレーザ照射方法およびレーザ照射装置は、例えば半導体層の作製や活性化処理に利用できる。   The laser irradiation method and laser irradiation apparatus of the present invention can be used, for example, for the production of a semiconductor layer and activation processing.

実施例１に係るレーザ照射装置の構成説明図である1 is a configuration explanatory diagram of a laser irradiation apparatus according to Embodiment 1. FIG. 実施例１に係るタイミング制御回路の動作を示すタイミングチャートである。3 is a timing chart illustrating an operation of the timing control circuit according to the first embodiment. 帯状照射領域の長軸方向の位置を示す上面図である。It is a top view which shows the position of the major axis direction of a strip | belt-shaped irradiation area | region.

符号の説明Explanation of symbols

１ レーザ発振器
２ 回転多角形ミラー
３ａ ホモジナイザー
３ｂ ミラー
３ｃ レンズ
４ 帯状照射領域
５ 移動台
６ モータ
７ エンコーダ
８ タイミング制御回路
１００ レーザ照射装置 DESCRIPTION OF SYMBOLS 1 Laser oscillator 2 Rotating polygon mirror 3a Homogenizer 3b Mirror 3c Lens 4 Band-shaped irradiation area 5 Moving stand 6 Motor 7 Encoder 8 Timing control circuit 100 Laser irradiation apparatus

Claims (2)

レーザビーム（Ｂ１)をパルス出力するレーザ発振器（１）と、前記レーザビーム（Ｂ１）を反射する反射器（２）と、前記レーザビーム（Ｂ１）が入射する前記反射器（２）の反射面（２ｂ）の前記レーザビーム（Ｂ１）に対する角度（θ）または位置の変化により反射ビーム（Ｂ２）が動く方向を長軸方向とする帯状照射領域（４）に前記反射ビーム（Ｂ２）を整形し半導体基板（Ｓ）に照射する光学系（３）と、前記半導体基板（Ｓ）を保持して前記帯状照射領域（４）の短軸方向に移動しうる移動台（５）と、前記反射器（２）の角度または位置を変える反射器駆動手段（６）と、帯状照射領域の長軸方向の所定範囲内で帯状照射領域の位置を変えるために前記レーザ発振器（１）でレーザビーム（Ｂ１)をパルス出力するタイミングと前記反射器駆動手段（６）で前記反射器（２）の角度または位置を変えるタイミングの調整を行うタイミング制御手段（８）とを具備することを特徴とするレーザ照射装置（１００）。   A laser oscillator (1) that outputs a laser beam (B1) in pulses, a reflector (2) that reflects the laser beam (B1), and a reflecting surface of the reflector (2) on which the laser beam (B1) is incident The reflected beam (B2) is shaped into a strip-shaped irradiation region (4) whose major axis is the direction in which the reflected beam (B2) moves due to a change in the angle (θ) or position of the laser beam (B1) in (2b). An optical system (3) for irradiating the semiconductor substrate (S), a movable table (5) that holds the semiconductor substrate (S) and can move in the minor axis direction of the strip-shaped irradiation region (4), and the reflector Reflector driving means (6) for changing the angle or position of (2), and a laser beam (B1) by the laser oscillator (1) for changing the position of the strip-shaped irradiation region within a predetermined range in the major axis direction of the strip-shaped irradiation region ) Pulse output timing and A laser irradiation apparatus (100) comprising timing control means (8) for adjusting timing for changing the angle or position of the reflector (2) by the reflector driving means (6). トリガ（Ｇ）に応じてレーザビーム（Ｂ１)をパルス出力するレーザ発振器（１）と、前記レーザビーム（Ｂ１）を反射する回転多角形ミラー（２）と、前記レーザビーム（Ｂ１）が入射する前記回転多角形ミラー（２）の反射面（２ｂ）への前記レーザビーム（Ｂ１）の入射角（θ）の変化により反射ビーム（Ｂ２）が振れる方向を長軸方向とする帯状照射領域（４）に前記反射ビーム（Ｂ２）を整形し半導体基板（Ｓ）に照射する光学系（３）と、前記半導体基板（Ｓ）を保持して前記帯状照射領域（４）の短軸方向に移動しうる移動台（５）と、前記回転多角形ミラー（２）を一定速度で回転させる回転駆動手段（６）と、前記回転多角形ミラー（２）の回転位相情報（Ｑ）を出力する回転位相検出手段（７）と、前記回転位相情報（Ｑ）に基づいて前記トリガ（Ｇ）の出力タイミングを所定の時間範囲内で変化させて前記入射角（θ）を所定角度範囲内で変化させるタイミング制御手段（８）とを具備することを特徴とするレーザ照射装置（１００）。
A laser oscillator (1) that outputs a laser beam (B1) in response to a trigger (G), a rotating polygon mirror (2) that reflects the laser beam (B1), and the laser beam (B1) are incident. A strip-shaped irradiation region (4) in which the major axis direction is the direction in which the reflected beam (B2) swings due to the change in the incident angle (θ) of the laser beam (B1) to the reflecting surface (2b) of the rotating polygon mirror (2). ) And the optical system (3) for shaping the reflected beam (B2) and irradiating the semiconductor substrate (S), and holding the semiconductor substrate (S) and moving it in the minor axis direction of the band-like irradiation region (4). A movable stage (5), a rotation driving means (6) for rotating the rotating polygon mirror (2) at a constant speed, and a rotation phase for outputting rotation phase information (Q) of the rotating polygon mirror (2). A detecting means (7) and the rotational phase information (Q And a timing control means (8) for changing the incident angle (θ) within a predetermined angle range by changing the output timing of the trigger (G) within a predetermined time range based on Laser irradiation apparatus (100).
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JP2004349415A (en) * 2003-05-21 2004-12-09 Hitachi Ltd Method of manufacturing active matrix substrate, and image display apparatus using same

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