JP4546700B2 - 結晶基板上に結晶層をガス相から堆積させる装置 - Google Patents
結晶基板上に結晶層をガス相から堆積させる装置 Download PDFInfo
- Publication number
- JP4546700B2 JP4546700B2 JP2002581713A JP2002581713A JP4546700B2 JP 4546700 B2 JP4546700 B2 JP 4546700B2 JP 2002581713 A JP2002581713 A JP 2002581713A JP 2002581713 A JP2002581713 A JP 2002581713A JP 4546700 B2 JP4546700 B2 JP 4546700B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- hydride
- reaction chamber
- source
- substrate holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
基板ホルダーキャリアは回転駆動してもよい。この場合、基板ホルダーキャリアは、ソース部が好適に配置される反応室の対称軸周りに回転する。工程の実行時には、円形ディスク形状をなす基板が静置された基板ホルダーが、基板ホルダーキャリア上に点在するように配置される。基板ホルダーは、それ自身が回転駆動されるので、それに適するように円形ディスク状に形成される。ソ―ス部は、基板ホルダーキャリアとともに回転してもよく、あるいは反応室内の一定位置に固定されてもよい。
基板は、基板ホルダーキャリアの中心周りに環状に配置される。これらの基板の配置方法は多様であってもよい。例えば、各基板ホルダーに一枚の基板を配置してもよい。ただし、一個の基板ホルダー上に多数の基板を配置することも可能である。基板ホルダーは公知の方法でガスクッション上に配置してもよい。同様に、回転駆動はガス流により公知の方法で行われる。上記ソースの一つはドーパントと入れ替えてもよい。使用ドーパントは金属、例えば鉄を用いることができる。但し、ドーパントはガス状で、特に水素化物として反応室に導入することもできる。使用ドーパントは、例えば、SiH4を用いることができる。
図1は、本発明による装置又は方法の概略図である。
図2は、同様に、装置の第一の実施例を概略的に示す図である。
図3は、図2のラインIII−III上の断面である。
図4は、図2に示した実施例の変形例である。
図5は、図2に示したものと同様の本発明の他の実施例を示す。
図6は、図5に示した実施例の変形例である。
図7は、本発明の関連技術である。
図8は、図7の関連技術の、図7に示した矢印VIIIにより示した方向から見た図である。
図9は、他の関連技術の、図8に示したものに対応する図である。
図10は、基板ホルダー/基板ホルダーキャリア上の基板の配置を示す。
図11は、図10によるものの変形例である。
図12は、図10によるものの他の変形例である。
図13は、図10によるものの第三の変形例である。
Claims (17)
- 疑似基板として使用する結晶層を形成するために、結晶基板である基板(3)上に該結晶層をガス相から堆積させる装置であって、
(a)対称軸をもつ円形の基板ホルダーキャリア(7)と、該基板ホルダーキャリア上にて該対称軸周りに環状に配置されかつ各々が回転駆動されるとともに少なくとも1つの基板(3)を受容する複数の基板ホルダー(2)とを設けた、加熱された反応室(1)と、
(b)金属ハロゲン化物を前記反応室(1)内の前記基板(3)に対し供給するためのソース部(4、16)であって、該反応室(1)内における前記基板ホルダーキャリア(7)の中央部に配置されかつ1又は複数の金属であるソースがそれぞれ充填された皿又は容器を具備し、各ソースは個別に加熱されて液体状となっており、キャリアガスとともに該反応室内に供給されるガス状のハロゲンと各ソースとがそれぞれ化学反応を行うことにより該反応室内においてガス状の金属ハロゲン化物を生成する、該ソース部(4、16)と、
(c)第V族成分を付与するためのガス状の水素化物を前記反応室(1)内の前記基板(3)に対し供給するための水素化物供給手段(6)と、を備え、
(d)前記ガス状の金属ハロゲン化物と前記ガス状の水素化物とが、前記反応室内において化学反応することにより、該基板上に前記結晶層をガス相から堆積させることを特徴とする、結晶基板上に結晶層を堆積させる装置。 - 前記1又は複数のソースが、金属のGa、In及びAlのうちの1又は複数であることを特徴とする請求項1に記載の装置。
- 前記ハロゲンがHClであることを特徴とする請求項1又は2に記載の装置。
- 前記第V族の成分を導入するための水素化物がNH3、AsH3又はPH3であることを特徴とする請求項1〜3の何れかに記載の装置。
- 前記金属ハロゲン化物又は前記水素化物は、前記反応室(1)を半径方向に流れることを特徴とする請求項1〜4の何れかに記載の装置。
- 前記ハロゲンが、前記反応室(1)の中央部に導入されることを特徴とする請求項1〜5の何れかに記載の装置。
- 前記ソース部(4)の各ソースは、赤外光又は高周波により加熱される(8)ことを特徴とする請求項1〜6の何れかに記載の装置。
- 前記基板ホルダーキャリア(7)は、前記対称軸周りで回転駆動されることを特徴とする請求項1〜4の何れかに記載の装置。
- 前記ソース部(4)は、前記基板ホルダーキャリア(7)と共に回転するか、又は一定位置に固定されることを特徴とする請求項8に記載の装置。
- 前記水素化物供給手段(6)が、前記基板ホルダーキャリア(7)に対向して配置された反応室カバー(12)に設けられた開口(10)であり、前記開口(10)から前記基板(3)に対して水素化物が供給されることを特徴とする請求項1〜9の何れかに記載の装置。
- 前記開口(10)は、前記反応室カバー(12)における前記基板ホルダーキャリア(7)に対向する部分に一様に分布することを特徴とする請求項10に記載の装置。
- 前記水素化物供給手段(6)が、前記基板ホルダーキャリア(7)の半径方向に延びる複数の供給ラインの各々の上に列をなして設けられた開口(10)であり、該複数の供給ラインは周方向に所定の角度毎に配置され、前記開口(10)から前記基板(3)に対して水素化物が供給されることを特徴とする請求項1〜9の何れかに記載の装置。
- 前記ソース部(4)において、前記ハロゲンは、前記皿(17)の上方を通過するか、又は前記容器(18)の内部を通過することにより該容器を洗浄することを特徴とする請求項1〜12の何れかに記載の装置。
- 前記基板ホルダー(2)が、ガスクッション(14)に装着されてガス流により回転駆動されることを特徴とする請求項1〜13の何れかに記載の装置。
- 前記基板(3)として、300mmまでの直径を有するSi又はAl2O3基板を使用可能であることを特徴とする請求項1〜14の何れかに記載の装置。
- 前記第V族成分付与のための水素化物以外の水素化物をドーパントとして、前記反応室(1)内の基板(3)に対し供給することを特徴とする請求項1〜12の何れかに記載の装置。
- 前記ソース部(4)に充填されている複数のソースのうち少なくとも1つをドーパントに交換したことを特徴とする請求項1〜16の何れかに記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10118130A DE10118130A1 (de) | 2001-04-11 | 2001-04-11 | Vorrichtung oder Verfahren zum Abscheiden von insbesondere kristallinen Schichten auf insbesondere kristallinen Substraten aus der Gasphase |
PCT/EP2002/000814 WO2002083978A1 (de) | 2001-04-11 | 2002-01-26 | Vorrichtung oder verfahren zum abscheiden von insbesondere kristallinen schichten auf insbesondere kristallinen substraten aus de r gasphase |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004526324A JP2004526324A (ja) | 2004-08-26 |
JP4546700B2 true JP4546700B2 (ja) | 2010-09-15 |
Family
ID=7681261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002581713A Expired - Fee Related JP4546700B2 (ja) | 2001-04-11 | 2002-01-26 | 結晶基板上に結晶層をガス相から堆積させる装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7128785B2 (ja) |
JP (1) | JP4546700B2 (ja) |
DE (1) | DE10118130A1 (ja) |
TW (1) | TWI285223B (ja) |
WO (1) | WO2002083978A1 (ja) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10043601A1 (de) * | 2000-09-01 | 2002-03-14 | Aixtron Ag | Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten |
US6921062B2 (en) * | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
DE10247921A1 (de) * | 2002-10-10 | 2004-04-22 | Aixtron Ag | Hydrid VPE Reaktor |
US20070031991A1 (en) * | 2003-03-21 | 2007-02-08 | Forschungszentrum Julich Gmbh | Method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition |
KR100578089B1 (ko) | 2004-12-22 | 2006-05-10 | 주식회사 시스넥스 | 수소화물기상증착 반응기 |
DE102005056323A1 (de) * | 2005-11-25 | 2007-05-31 | Aixtron Ag | Prozesskammermodul zum gleichzeitigen Abscheiden von Schichten auf mehreren Substraten |
US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
US20070256635A1 (en) * | 2006-05-02 | 2007-11-08 | Applied Materials, Inc. A Delaware Corporation | UV activation of NH3 for III-N deposition |
US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
US20090136652A1 (en) * | 2007-06-24 | 2009-05-28 | Applied Materials, Inc. | Showerhead design with precursor source |
US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
WO2009049020A2 (en) | 2007-10-11 | 2009-04-16 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
US8668775B2 (en) * | 2007-10-31 | 2014-03-11 | Toshiba Techno Center Inc. | Machine CVD shower head |
EP2227576B1 (en) * | 2007-12-20 | 2015-06-03 | Soitec | Apparatus for delivering precursor gases to an epitaxial growth substrate |
US20090194024A1 (en) * | 2008-01-31 | 2009-08-06 | Applied Materials, Inc. | Cvd apparatus |
JP5107185B2 (ja) * | 2008-09-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
JP5276387B2 (ja) * | 2008-09-04 | 2013-08-28 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
DE102008055582A1 (de) * | 2008-12-23 | 2010-06-24 | Aixtron Ag | MOCVD-Reaktor mit zylindrischem Gaseinlassorgan |
US8183132B2 (en) * | 2009-04-10 | 2012-05-22 | Applied Materials, Inc. | Methods for fabricating group III nitride structures with a cluster tool |
US8568529B2 (en) | 2009-04-10 | 2013-10-29 | Applied Materials, Inc. | HVPE chamber hardware |
WO2010124261A2 (en) * | 2009-04-24 | 2010-10-28 | Applied Materials, Inc. | Substrate pretreatment for subsequent high temperature group iii depositions |
US20100273291A1 (en) * | 2009-04-28 | 2010-10-28 | Applied Materials, Inc. | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
TW201039381A (en) * | 2009-04-29 | 2010-11-01 | Applied Materials Inc | Method of forming in-situ pre-GaN deposition layer in HVPE |
WO2011017501A2 (en) * | 2009-08-05 | 2011-02-10 | Applied Materials, Inc. | Cvd apparatus |
JP5396264B2 (ja) * | 2009-12-25 | 2014-01-22 | 東京エレクトロン株式会社 | 成膜装置 |
JP5409413B2 (ja) * | 2010-01-26 | 2014-02-05 | 日本パイオニクス株式会社 | Iii族窒化物半導体の気相成長装置 |
KR100996210B1 (ko) * | 2010-04-12 | 2010-11-24 | 세메스 주식회사 | 가스 분사 유닛 및 이를 이용한 박막 증착 장치 및 방법 |
US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
US8486192B2 (en) * | 2010-09-30 | 2013-07-16 | Soitec | Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods |
US8133806B1 (en) | 2010-09-30 | 2012-03-13 | S.O.I.Tec Silicon On Insulator Technologies | Systems and methods for forming semiconductor materials by atomic layer deposition |
TWI534291B (zh) | 2011-03-18 | 2016-05-21 | 應用材料股份有限公司 | 噴淋頭組件 |
US8840726B2 (en) * | 2011-06-08 | 2014-09-23 | Asm Technology Singapore Pte Ltd | Apparatus for thin-film deposition |
US20120322168A1 (en) * | 2011-06-16 | 2012-12-20 | Heng Liu | Chemical vapor deposition apparatus |
US10385452B2 (en) | 2012-05-31 | 2019-08-20 | Entegris, Inc. | Source reagent-based delivery of fluid with high material flux for batch deposition |
TWI473903B (zh) | 2013-02-23 | 2015-02-21 | Hermes Epitek Corp | 應用於半導體設備的噴射器與上蓋板總成 |
JP6321455B2 (ja) * | 2014-05-21 | 2018-05-09 | 東京応化工業株式会社 | 窒化ガリウムの製造方法 |
KR102369676B1 (ko) | 2017-04-10 | 2022-03-04 | 삼성디스플레이 주식회사 | 표시 장치의 제조장치 및 표시 장치의 제조방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3690290A (en) * | 1971-04-29 | 1972-09-12 | Motorola Inc | Apparatus for providing epitaxial layers on a substrate |
FR2632452B1 (fr) * | 1988-06-03 | 1990-08-17 | Labo Electronique Physique | Procede de realisation de couches epitaxiales |
US4888303A (en) * | 1988-11-09 | 1989-12-19 | The United States Of America As Represented By The Secretary Of The Air Force | Vapor phase epitaxy-hydride technique with a constant alloy source for the preparation of InGaAs layers |
US5660628A (en) * | 1993-08-18 | 1997-08-26 | Mitsubishi Kasei Corp. | Method of manufacturing semiconductor epitaxial wafer |
GB9411911D0 (en) * | 1994-06-14 | 1994-08-03 | Swan Thomas & Co Ltd | Improvements in or relating to chemical vapour deposition |
DE69610650T2 (de) | 1995-01-31 | 2001-05-03 | Mbt Holding Ag, Zuerich | Zementdispergiermittel |
US5702532A (en) | 1995-05-31 | 1997-12-30 | Hughes Aircraft Company | MOCVD reactor system for indium antimonide epitaxial material |
JP2000511705A (ja) * | 1997-04-10 | 2000-09-05 | ユニフェイズ オプト ホールディングス インコーポレイテッド | 半導体デバイスの製造方法及びこの方法を実施する装置 |
US6086673A (en) * | 1998-04-02 | 2000-07-11 | Massachusetts Institute Of Technology | Process for producing high-quality III-V nitride substrates |
US6179913B1 (en) * | 1999-04-16 | 2001-01-30 | Cbl Technologies, Inc. | Compound gas injection system and methods |
-
2001
- 2001-04-11 DE DE10118130A patent/DE10118130A1/de not_active Withdrawn
-
2002
- 2002-01-26 JP JP2002581713A patent/JP4546700B2/ja not_active Expired - Fee Related
- 2002-01-26 WO PCT/EP2002/000814 patent/WO2002083978A1/de active Application Filing
- 2002-02-20 TW TW091102895A patent/TWI285223B/zh not_active IP Right Cessation
-
2003
- 2003-10-14 US US10/685,233 patent/US7128785B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2004526324A (ja) | 2004-08-26 |
US20040129215A1 (en) | 2004-07-08 |
US7128785B2 (en) | 2006-10-31 |
WO2002083978A1 (de) | 2002-10-24 |
DE10118130A1 (de) | 2002-10-17 |
TWI285223B (en) | 2007-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4546700B2 (ja) | 結晶基板上に結晶層をガス相から堆積させる装置 | |
US20140326186A1 (en) | Metal-organic vapor phase epitaxy system and process | |
EP2084304B1 (en) | Method and apparatus for the epitaxial deposition of monocrystalline group iii-v semiconductor material using gallium trichloride | |
JP2007311558A (ja) | 気相成長装置および気相成長基板の製造方法 | |
EP2038456B1 (en) | System and process for high volume deposition of gallium nitride | |
US8815711B2 (en) | Manufacturing apparatus and method for semiconductor device and cleaning method of manufacturing apparatus for semiconductor | |
US20100273320A1 (en) | Device and method for selectively depositing crystalline layers using mocvd or hvpe | |
WO2008064080A1 (en) | High volume delivery system for gallium trichloride | |
JP5042966B2 (ja) | トレイ、気相成長装置及び気相成長方法 | |
GB2282825A (en) | Chemical vapour deposition apparatus | |
TW201344964A (zh) | 氣相沉積裝置及成膜方法 | |
EP1907609A1 (en) | Method and reactor for growing crystals | |
JP2009032784A (ja) | 気相成長装置、及び半導体素子の製造方法 | |
JP5496721B2 (ja) | 成膜装置および成膜方法 | |
JP2021015896A (ja) | 炭化珪素エピタキシャル成長装置及び炭化珪素エピタキシャルウエハの製造方法 | |
JPH1112085A (ja) | 化学気相成長装置 | |
JP4341647B2 (ja) | 化学気相成長装置 | |
JP2004165445A (ja) | 半導体製造装置 | |
JP2013074078A (ja) | 気相成長装置の構成部品の洗浄装置及び洗浄方法 | |
JP2007042899A (ja) | 気相成長装置 | |
JP2012084581A (ja) | 気相成長装置 | |
JP2009270170A (ja) | 気相成長方法 | |
JP5493062B2 (ja) | 有機金属気相成長装置 | |
JP2008243948A (ja) | エピタキシャル基板の製造方法 | |
JP2000031064A (ja) | 横型気相エピタキシャル成長方法及びその装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041126 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071002 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071213 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080131 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080304 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080516 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20080708 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20080808 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100702 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130709 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |