JP4546094B2 - デュアルダマシン配線をパターン形成する三層マスキングアーキテクチャ - Google Patents
デュアルダマシン配線をパターン形成する三層マスキングアーキテクチャ Download PDFInfo
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- JP4546094B2 JP4546094B2 JP2003582809A JP2003582809A JP4546094B2 JP 4546094 B2 JP4546094 B2 JP 4546094B2 JP 2003582809 A JP2003582809 A JP 2003582809A JP 2003582809 A JP2003582809 A JP 2003582809A JP 4546094 B2 JP4546094 B2 JP 4546094B2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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Description
a)基体、
b)基体上の、3.0よりも小さい誘電定数を有する頂部部分を含む誘電体スタック、
c)誘電体スタックの上の、銅を除去するように設計されている化学的機械的研磨システムによるエロージョンに対して耐性であり、そして誘電体スタックの頂部部分に対して(relative to)エッチ選択性を有する、第一マスク層、
d)第一マスク層の上の、第一マスク層に対してエッチ選択性を有し、そして誘電体スタックの頂部部分のものと同様のエッチ特性を有する、第二マスク層、及び
e)第二マスク層の上の、第二マスク層に対してエッチ選択性を有し、そして第一マスク層のものと同様のエッチ特性を有する、第三マスク層
を含んでなる物品である。
(a)基体を用意する工程、
(b)トレンチが形成される頂部部分及びその中にビアが形成される底部部分並びに頂部部分と底部部分(頂部部分及び底部部分のそれぞれの誘電定数が3.0よりも小さく、好ましくは2.7よりも小さい)との間のエッチストップ層を含んでなる誘電体スタックを基体に適用する工程、
(c)研磨工程の間にストップとして作用し、誘電体スタックの頂部部分に対してエッチ選択性を有し、そしてエッチストップ層のエッチ特性と同様のエッチ特性を有する第一マスク層を適用する工程、
(d)第一マスク層に対してエッチ選択性を有し、そして誘電体スタックの頂部部分のものと同様のエッチ特性を有する第二マスク層を適用する工程、
(e)第二マスク層に対してエッチ選択性を有し、そして第一層のためのものと同様のエッチ特性を有する第三マスク層を適用する工程、
(f)トレンチパターンに従って第一、第二及び第三マスク層をパターン形成する工程、
(g)ビアパターンでエッチストップ層をパターン形成する工程、
(h)誘電体スタックの頂部部分の中にトレンチパターンをエッチングして、少なくとも1個のトレンチを形成し、そして誘電体スタックの底部部分の中にビアパターンをエッチングして、少なくとも1個のビアを形成する工程、
(i)ビア及びトレンチ内に金属を付着させる工程、
(j)過剰の金属を研磨除去する工程(ここで、第一マスク層は、研磨ストップとして機能する)
を含んでなる、第三マスク層の少なくとも実質的部分が第一マスク層又はエッチストップ層のパターン形成の間に除去され、そして第二マスク層の少なくとも実質的部分が誘電体スタックのエッチングの間に除去される方法である。
(a)基体を用意する工程、
(b)誘電体層を基体に適用する工程(ここで、誘電体層は、その中にトレンチが形成される頂部部分及びその中にビアが形成される底部部分を含み、層の誘電定数が3.0よりも小さく、好ましくは2.7よりも小さい)
(c)研磨工程の間にストップとして作用し、誘電体層に対してエッチ選択性を有する第一マスク層を適用する工程、
(d)第一マスク層に対してエッチ選択性を有する第二マスク層を適用する工程、
(e)第二マスク層に対してエッチ選択性を有し、そして第一マスク層のエッチ特性と同様のエッチ特性を有する第三マスク層を適用する工程、
(f)トレンチパターンに従って第二及び第三マスク層をパターン形成する工程、
(g)ビアパターンに従って第一マスク層をパターン形成する工程、
(h)誘電体層の中への通路(way)の一部にビアパターンをエッチングする工程、
(i)第二マスク層及び第三マスク層内に作られたトレンチパターンに従って、第一マスク層をパターン形成し、そして同時に、第三マスク層の実質的部分を除去する工程、
(j)誘電体層のエッチングを続け、それによって誘電体層の底部部分内に少なくとも一つのビアを形成し、そして誘電体層の頂部部分内に少なくとも一つのトレンチを形成する工程、
(k)ここで、第三マスク層が第一マスク層又はエッチストップ層のパターン形成の間に実質的に除去され、そして第二マスク層が誘電体スタックのエッチングの間に実質的に除去され、
(l)ビア及びトレンチ内に金属を付着させる工程、
(m)過剰の金属を研磨除去する工程(ここで、第一マスク層は研磨ストップとして機能する)、
を含んでなる方法である。
/cm3よりも小さい密度を有する。
のものである。用語「アルキリデン」は結合が同じ炭素で起こる脂肪族炭化水素基を指す。用語「アルキレン」は式−(CnH2n)−に相当する基を指す。用語「アリール」は芳香族基を指し、「芳香族」はMorrison及びBoyd著「有機化学(Organic Chemistry)」第3版、1973年に記載されているような、(4n+2)個の電子を含有するとして定義される。用語「アリーレン」は2個の結合点を有するアリール基を指す。用語「アルキル」はメチル、エチル等のような飽和脂肪族基を指す。「アルケニル」はエチレン、ブチレン等のような、少なくとも1個の二重結合を含有するアルキル基を指す。「アルキニル」は少なくとも1個の炭素−炭素三重結合を含有するアルキル基を指す。「アシル」は−C(O)R構造を有する基を指す(例えば、C2アシルは−C(O)CH3である)。「アシルオキシ」は−OC(O)R構造を有する基を指す。上記の基には、また、ハロゲン、アルキル基、アリール基及びヘテロ基、例えばエーテル、オキシイミノ、エステル、アミド又は酸性若しくは塩基性単位、即ち、カルボキシル、エポキシ、アミノ、スルホン若しくはメルカプトのような他の置換基が含有されていてよい(但し、アルコキシシランは、被覆組成物の他の成分と相溶性のままであること)。好ましくは、使用されるシランはシランの混合物である。シランはアルコキシシラン、アシルオキシシラン、トリアルコキシシラン、トリアシルオキシシラン、ジアルコキシシラン、ジアシルオキシシラン、テトラアルコキシシラン又はテトラアシルオキシシランであってよい。ケイ素原子に直接結合している有機基の幾つかの例はフェニル、メチル、エチル、エタクリルオキシプロピル、アミノプロピル、3−アミノエチルアミノプロピル、ビニル、ベンジル、ビシクロヘプテニル、シクロヘキセニルエチル、シクロヘキシル、シクロペンタジエニルプロピル、7−オクタ−1−エニル、フェネチル、アリル又はアセトキシのようなものであってよい。シランは、好ましくは、溶媒無し方法によって加水分解又は部分的に加水分解される。幾つかの有機基がケイ素原子に直接結合しているならば、シランは硬化後でも有機部分を保有しているであろう。ハードマスク又はエッチストップ層内の所望の特性をバランスさせるために、シランの混合物を使用することができる。例えば、本発明者等は、アリールアルコキシ又はアリールアシルオキシシラン(例えばフェニルトリメトキシシラン)を、不飽和炭素−炭素結合を有する基(例えばビニル又はフェニルエチニルのようなアルケニル又はアルキリデニル単位)を有するアルキルオキシシラン又はアシルオキシシランと組合せて使用することによって、好ましい有機ポリマー誘電体材料、特に追加の炭素−炭素結合不飽和を有する芳香族ポリマーで、優れた湿潤、被覆及び接着特性が得られることを見出した。芳香族置換シランの存在によって、また、水分感受性が改良され、単一シラン系を超えて誘電定数を改良することができる。更に、アルキルアルコキシシラン又はアルキルアシルオキシシラン(例えばメチルトリメトキシシラン又はエチルトリメトキシシラン)をアリール及び不飽和置換シランと組合せて使用することによって、水分保持/排除が更に改良され、得られるフィルムの誘電定数が低下することが見出された。更に、モノアルコキシ、モノアシルオキシ、ジアルコキシ、ジアシルオキシ、トリアルコキシ、トリアシルオキシ、テトラアルコキシシラン又はテトラアシルオキシの混合物を、エッチ選択性、バランス化の調節等の向上を可能にするために、同様に混合物中に使用することができる。
(a)50〜95モル%の、式:
のシラン、
(b)5〜40モル%の
及び
(c)0〜45モル%の
からなる混合物の、加水分解又は部分的加水分解生成物である上記の組成物が好ましい。モル%は、存在するシラン(a)、(b)及び(c)の合計モル数基準である。
1)接着促進剤、ダウAP5000を、裸のシリコンウェーハの上に600rpmで適用し、3000rpmで30秒間スピンし、そして185℃で90秒間ベークした。
以下に本発明及びその関連態様を列挙する。
態様1.a)基体、
b)基体上の、3.0よりも小さい誘電定数を有する頂部部分を含む誘電体スタック、
c)誘電体スタックの上の、銅を除去するように設計されている化学的機械的研磨システムによるエロージョンに対して耐性であり、そして誘電体スタックの頂部部分に対してエッチ選択性を有する第一マスク層、
d)第一マスク層の上の、第一マスク層に対してエッチ選択性を有し、そして誘電体スタックの頂部部分のエッチ特性と同様のエッチ特性を有する第二のマスク層及び
e)第二マスク層の上の、第二マスク層に対してエッチ選択性を有し、そして第一マスク層のエッチ特性と同様のエッチ特性を有する第三マスク層を含んでなる物品。
態様2.誘電体スタックが底部有機誘電体層、頂部有機誘電体層及びこれらの層の間の無機エッチストップ層を含む態様1に記載の物品。
態様3.有機誘電体層が多孔質である態様2に記載の物品。
態様4.有機誘電体層が有機マトリックス材料内の分離領域中に熱的置換活性ポラゲンを含む態様2に記載の物品。
態様5.第一マスク層及び第三マスク層が無機質であり、そして第二マスク層が有機質である態様2に記載の物品。
態様6.エッチストップ層が第一マスク層及び第三マスク層の少なくとも一つと同じものである態様5に記載の物品。
態様7.誘電体スタックの頂部部分に対する第一ハードマスク層のエッチ選択性比が7:1よりも大きい態様1に記載の物品。
態様8.誘電体スタックの頂部部分に対する第二ハードマスク層のエッチ選択性比が3:1よりも小さい態様1に記載の物品。
態様9.第一ハードマスク層に対する第三マスク層のエッチ選択性比が3:1よりも小さい態様1に記載の物品。
態様10.エッチストップに対する第一ハードマスクの選択性比が3:1よりも小さい態様2に記載の物品。
態様11.誘電体スタック内にトレンチ及びビアを形成する方法であって、
(a)誘電体スタックが、底部部分及び同様のエッチ特性を有する頂部部分並びに底部部分及び頂部部分と相対的なエッチ選択性を有する、底部部分と頂部部分との間のエッチストップ層を含んでなる態様1〜10の何れか1項に記載の物品を用意する工程、
(b)トレンチパターンに従って第一マスク層をパターン形成する工程、
(c)ビアパターンでエッチストップ層をパターン形成する工程、
(d)誘電体スタックの頂部部分の中にトレンチパターンをエッチングして、少なくとも1個のトレンチを形成し、そして誘電体スタックの底部部分の中にビアパターンをエッチングして少なくとも1個のビアを形成する工程、
(e)ビア及びトレンチ内に金属を付着させる工程、
(f)過剰の金属を研磨除去する工程を含んでなり、
第一マスク層は研磨ストップとして機能し、第三マスク層の少なくとも実質的部分は第一マスク層又はエッチストップ層のパターン形成の間に除去され、そして第二マスク層の少なくとも実質的部分は誘電体スタックのエッチングの間に除去される方法。
態様12.トレンチが形成される頂部部分及びビアが形成される底部部分を有する単一層を含んでなる誘電体スタック内にトレンチ及びビアを形成する方法であって、
(a)態様1及び態様7〜10のいずれか1項に記載の物品を用意する工程、
(b)研磨工程の間にストップとして作用し、誘電体層に対してなエッチ選択性を有する第一マスク層を適用する工程、
(c)第一マスク層に対してエッチ選択性を有する第二マスク層を適用する工程、
(d)第二マスク層に対してエッチ選択性を有し、そして第一マスク層のエッチ特性と同様のエッチ特性を有する第三マスク層を適用する工程、
(e)トレンチパターンに従って第二マスク層及び第三マスク層をパターン形成する工程、
(f)ビアパターンに従って第一マスク層をパターン形成する工程、
(g)誘電体層の中への路の一部にビアパターンをエッチングする工程、
(h)第二マスク層及び第三マスク層内に作製されたトレンチパターンに従って第一マスク層をパターン形成し、そして同時に、第三マスク層の実質的部分を除去する工程、
(i)誘電体層のエッチングを続け、それによって誘電体層の底部部分内に少なくとも一つのビアを形成し、そして誘電体層の頂部部分内に少なくとも一つのトレンチを形成する工程、
(j)第三マスク層が第一マスク層又はエッチストップ層のパターン形成の間に実質的に除去され、そして第二マスク層が誘電体スタックのエッチングの間に実質的に除去され、
(k)ビア及びトレンチ内に金属を付着させる工程、
(l)過剰の金属を研磨除去する工程(ここで、第一マスク層は研磨ストップとして機能する)を含んでなる方法。
態様13.全ての層を溶媒コーティングすることによって適用する態様11又は12に記載の方法。
態様14.誘電体層が誘電体マトリックス材料内の分離領域中に熱的置換活性ポラゲンを含み、そしてポラゲンを少なくとも一つのハードマスク層の適用後に加熱によって除去する態様11又は12に記載の方法。
態様15.ポロゲン又はポラゲンの熱分解生成物が少なくとも一つのハードマスク層を通って拡散する態様14に記載の方法。
態様16.第一ハードマスク層が光定義可能であり、そして放射線への画像様露光及び現像によってパターン形成される態様11又は12に記載の方法。
態様17.第一ハードマスク層内にトレンチパターンを形成する工程が、ホトレジストを第三ハードマスク層の上に適用すること、このホトレジストをトレンチパターンで画像形成し、現像すること、トレンチパターンを第三ハードマスク層の中にエッチングすること、トレンチパターンを第二ハードマスク層の中にエッチングすること及びトレンチパターンを第一ハードマスク層の中にエッチングすることを含んでなる態様11に記載の方法。
態様18.トレンチパターンを第一ハードマスク層の中にエッチングする前に、第二ホトレジスト材料を適用し、第二ホトレジストをビアパターンで画像形成し、現像し、このビアパターンを第一ハードマスク層の中にエッチングし、次いで誘電体スタックの頂部部分の中にエッチングし、次いでエッチストップ及び第一ハードマスクを同時にエッチングして、第一ハードマスク層の中にトレンチパターンを形成させ、そしてエッチストップ層の中にビアパターンを形成する態様17に記載の方法。
態様19.第三ハードマスク層が光定義可能である態様11又は12に記載の方法。
態様20.第一ハードマスク層及び第三ハードマスク層が5:1よりも小さい、お互いに対するエッチ選択性を有する態様11又は12に記載の方法。
態様21.誘電体スタックの頂部部分に対する第一ハードマスク層のエッチ選択性比が7:1よりも大きい態様11又は12に記載の方法。
態様22.エッチストップに対する第一ハードマスクのエッチ選択性比が3:1よりも小さい態様11に記載の方法。
態様23.第一ハードマスク層及び第三ハードマスク層の少なくとも一方が光定義可能である態様11又は12に記載の方法。
態様24.第一マスク層内にトレンチパターンを形成し、第二マスク層及び第三マスク層内にビアパターンを形成し、誘電体層の中への通路の一部にビアパターンをエッチングし、次いで第三マスク層を除去し、そして誘電体層のエッチングを続けることによって誘電体層の底部部分内に少なくとも一つのビアを形成し、誘電体層の頂部部分内に少なくとも一つのトレンチを形成し、誘電体スタックのエッチングの間に第二マスク層を実質的に除去する態様12に記載の方法。
態様25.第一ハードマスク層が光定義可能であり、そしてこの層を活性化波長の放射線に露光し、この層を現像することによってトレンチパターンを形成する態様24に記載の方法。
態様26.誘電体層が誘電体マトリックス材料内の分離領域中に熱的置換活性ポラゲンを含み、少なくとも1個のハードマスク層を適用した後にこのポラゲンを加熱することにより、ポラゲン又はポラゲンの熱分解生成物が少なくとも一つのハードマスク層を通って拡散させて除去する態様24に記載の方法。
態様27.第三マスク層が光定義可能ではない態様11又は12に記載の方法。
Claims (15)
- a)基体、
b)基体上の、3.0よりも小さい誘電定数を有する有機質頂部部分を含む誘電体スタック、
c)誘電体スタックの上の、銅を除去するように設計されている化学的機械的研磨システムによるエロージョンに対して耐性である、第一の無機質マスク層であって、誘電体スタックの有機質頂部部分に対する第一のマスク層のエッチ選択性比が5:1よりも大きい第一の無機質マスク層
d)第一のマスク層の上の、第一のマスク層に対してエッチ選択性を有する第二の有機質マスク層であって、誘電体スタックの頂部部分に対する第二のマスク層のエッチ選択性比が5:1より大きい第二の有機質マスク層及び
e)第二のマスク層の上の第三の無機質マスク層を含んでなり、その第三のマスク層が第二のマスク層に対して5:1よりも大きいエッチ選択性比を有し、そして第一のマスク層に対して3:1よりも小さいエッチ選択性比を有する物品。 - 誘電体スタックが底部有機誘電体層、頂部有機誘電体層及びこれらの層の間の無機エッチストップ層を含む請求項1に記載の物品。
- 有機誘電体層が多孔質である請求項1に記載の物品。
- 有機誘電体層が有機マトリックス材料内の分離領域中に熱的置換活性ポラゲンを含む請求項1に記載の物品。
- エッチストップ層が第一のマスク層及び第三のマスク層の少なくとも一つと同じものである請求項1に記載の物品。
- 誘電体スタック内にトレンチ及びビアを形成する方法であって、
(a)誘電体スタック及びマスク層が溶剤コーティングによって適用された、請求項2〜5の何れか1項に記載の物品を用意する工程、
(b)トレンチパターンに従って第一のマスク層をパターン形成する工程、
(c)ビアパターンでエッチストップ層をパターン形成する工程、
(d)誘電体スタックの頂部部分の中にトレンチパターンをエッチングして、少なくとも1個のトレンチを形成し、そして誘電体スタックの底部部分の中にビアパターンをエッチングして少なくとも1個のビアを形成する工程、
(e)ビア及びトレンチ内に金属を付着させる工程、
(f)過剰の金属を研磨除去する工程を含んでなり、
第一のマスク層は研磨ストップとして機能し、第三のマスク層の少なくとも実質的部分は第一のマスク層又はエッチストップ層のパターン形成の間に除去され、そして第二のマスク層の少なくとも実質的部分は誘電体スタックのエッチングの間に除去される方法。 - (a)トレンチが形成される頂部部分及びビアが形成される底部部分を有する単一層を含んでなり、そして前記単一層誘電体スタックが溶剤コーティングによって形成される請求項1に記載の物品を用意する工程、
(b)研磨工程の間にストップとして作用する第一のマスク層を溶剤コーティングによって適用する工程、
(c)第二のマスク層を溶剤コーティングによって適用する工程、
(d)第三のマスク層を溶剤コーティングによって適用する工程、
(e)トレンチパターンに従って第二のマスク層及び第三のマスク層をパターン形成する工程、
(f)ビアパターンに従って第一のマスク層をパターン形成する工程、
(g)誘電体層の中への路の一部にビアパターンをエッチングする工程、
(h)第二のマスク層及び第三のマスク層内に作製されたトレンチパターンに従って第一のマスク層をパターン形成し、そして同時に、第三のマスク層の実質的部分を除去する工程、
(i)誘電体層のエッチングを続け、それによって誘電体層の底部部分内に少なくとも一つのビアを形成し、そして誘電体層の頂部部分内に少なくとも一つのトレンチを形成する工程、
(j)第三のマスク層が第一のマスク層又はエッチストップ層のパターン形成の間に実質的に除去され、そして第二のマスク層が誘電体スタックのエッチングの間に実質的に除去され、
(k)ビア及びトレンチ内に金属を付着させる工程、
(l)過剰の金属を研磨除去する工程(ここで、第一のマスク層は研磨ストップとして機能する)
を含んでなる誘電体スタック内にトレンチ及びビアを形成する方法。 - 誘電体層が誘電体マトリックス材料内の分離領域中に熱的置換活性ポラゲンを含み、そしてポラゲンを少なくとも一つのハードマスク層の適用後に加熱によって除去する請求項6又は7に記載の方法。
- ポロゲン又はポラゲンの熱分解生成物が少なくとも一つのハードマスク層を通って拡散する請求項8に記載の方法。
- 第一のハードマスク層及び第三のハードマスク層の少なくとも一つが光定義可能である請求項6又は7に記載の方法。
- 第一のハードマスク層内にトレンチパターンを形成する工程が、ホトレジストを第三のハードマスク層の上に適用すること、このホトレジストをトレンチパターンで画像形成し、現像すること、トレンチパターンを第三のハードマスク層の中にエッチングすること、トレンチパターンを第二のハードマスク層の中にエッチングすること及びトレンチパターンを第一のハードマスク層の中にエッチングすることを含んでなる請求項6に記載の方法。
- トレンチパターンを第一のハードマスク層の中にエッチングする前に、第二のホトレジスト材料を適用し、第二のホトレジストをビアパターンで画像形成し、現像し、このビアパターンを第一のハードマスク層の中にエッチングし、次いで誘電体スタックの頂部部分の中にエッチングし、次いでエッチストップ及び第一のハードマスクを同時にエッチングして、第一のハードマスク層の中にトレンチパターンを形成させ、そしてエッチストップ層の中にビアパターンを形成する請求項11に記載の方法。
- 第一のマスク層内にトレンチパターンを形成し、第二のマスク層及び第三のマスク層内にビアパターンを形成し、誘電体層の中への通路の一部にビアパターンをエッチングし、次いで第三のマスク層を除去し、そして誘電体層のエッチングを続けることによって誘電体層の底部部分内に少なくとも一つのビアを形成し、誘電体層の頂部部分内に少なくとも一つのトレンチを形成し、誘電体スタックのエッチングの間に第二のマスク層を実質的に除去する請求項7に記載の方法。
- 第一のハードマスク層が光定義可能であり、そしてこの層を活性化波長の放射線に露光し、この層を現像することによってトレンチパターンを形成する請求項13に記載の方法。
- 誘電体層が誘電体マトリックス材料内の分離領域中に熱的置換活性ポラゲンを含み、少なくとも1個のハードマスク層を適用した後にこのポラゲンを加熱することにより、ポラゲン又はポラゲンの熱分解生成物が少なくとも一つのハードマスク層を通って拡散させて除去する請求項13に記載の方法。
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PCT/US2003/009700 WO2003085724A1 (en) | 2002-04-02 | 2003-03-28 | Tri-layer masking architecture for patterning dual damascene interconnects |
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AU2003222115A1 (en) | 2003-10-20 |
TWI335047B (en) | 2010-12-21 |
KR101051276B1 (ko) | 2011-07-22 |
TW200306616A (en) | 2003-11-16 |
WO2003085724A8 (en) | 2004-11-04 |
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