JP4541742B2 - 集積回路装置 - Google Patents
集積回路装置 Download PDFInfo
- Publication number
- JP4541742B2 JP4541742B2 JP2004101092A JP2004101092A JP4541742B2 JP 4541742 B2 JP4541742 B2 JP 4541742B2 JP 2004101092 A JP2004101092 A JP 2004101092A JP 2004101092 A JP2004101092 A JP 2004101092A JP 4541742 B2 JP4541742 B2 JP 4541742B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- integrated circuit
- circuit device
- wiring
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/42—Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
2;論理回路部
3;温度センサ部
4;CMOS回路
5、6;チャネル領域
7;絶縁材料
8、9、10;温度モニタ部材
G1、G2;ゲート電極
M1;多層配線層
PSub;P型シリコン基板
Vg;ゲート端子
Vout1;出力端子
PW1;Pウエル
NW1;Nウエル
P1、P2、P3、P4;p+拡散領域
N1、N2;n+拡散領域
V1〜V9、V11〜V18;ビア
W1〜W5、W11〜W15;配線
Vcc;電源電位配線
GND;接地電位配線
Claims (5)
- 基板と、この基板上に設けられた多層配線層とを備えた集積回路装置において、前記多層配線層よりも上層に設けられその電気抵抗率の温度係数が負でありその一端部に第1の基準電位が印加される第1の温度モニタ部材と、その一端部が前記第1の温度モニタ部材の他端部に接続されその電気抵抗率の温度係数が正でありその他端部に前記第1の基準電位とは異なる第2の基準電位が印加される第2の温度モニタ部材と、を有し、
前記第1の温度モニタ部材が酸化バナジウムにより形成され、
前記第2の温度モニタ部材が、Al、Ti、Ni、W、Ta及びBeからなる群から選択された1種の金属若しくはその合金又は2種以上の金属を含む合金により形成されている
ことを特徴とする集積回路装置。 - 前記第2の温度モニタ部材が、TiNにより形成されている
ことを特徴とする請求項1に記載の集積回路装置。 - 前記第2の温度モニタ部材がチタン酸バリウムストロンチウム又はチタン酸バリウムにより形成されている
ことを特徴とする請求項1に記載の集積回路装置。 - 前記第2の温度モニタ部材が前記多層配線層の最下層の配線層よりも下方に配置されている
ことを特徴とする請求項3に記載の集積回路装置。 - 前記基板及び前記多層配線層に形成された論理回路部を有する
ことを特徴とする請求項1乃至4のいずれか1項に記載の集積回路装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004101092A JP4541742B2 (ja) | 2004-03-30 | 2004-03-30 | 集積回路装置 |
US11/087,587 US7741692B2 (en) | 2004-03-30 | 2005-03-24 | Integrated circuit device with temperature monitor members |
CNB2005100627396A CN100394588C (zh) | 2004-03-30 | 2005-03-29 | 带有内置单片温度传感器的集成电路器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004101092A JP4541742B2 (ja) | 2004-03-30 | 2004-03-30 | 集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005286237A JP2005286237A (ja) | 2005-10-13 |
JP4541742B2 true JP4541742B2 (ja) | 2010-09-08 |
Family
ID=35050075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004101092A Expired - Fee Related JP4541742B2 (ja) | 2004-03-30 | 2004-03-30 | 集積回路装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7741692B2 (ja) |
JP (1) | JP4541742B2 (ja) |
CN (1) | CN100394588C (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7255476B2 (en) * | 2004-04-14 | 2007-08-14 | International Business Machines Corporation | On chip temperature measuring and monitoring circuit and method |
KR100697278B1 (ko) * | 2005-01-27 | 2007-03-20 | 삼성전자주식회사 | 저항소자를 가지는 반도체 집적회로 |
US7919832B2 (en) | 2007-01-11 | 2011-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stack resistor structure for integrated circuits |
US7851237B2 (en) * | 2007-02-23 | 2010-12-14 | Infineon Technologies Ag | Semiconductor device test structures and methods |
CN104846445B (zh) * | 2015-05-15 | 2017-05-24 | 深圳大学 | 一种二氧化钒薄膜及其制备方法 |
KR101820675B1 (ko) | 2017-04-06 | 2018-01-24 | 한국표준과학연구원 | 다층 저항식 다점 온도측정 웨이퍼 센서 및 그 제조방법 |
TWI742613B (zh) | 2020-04-14 | 2021-10-11 | 聯陽半導體股份有限公司 | 積體電路的溫度感測裝置 |
US20230160754A1 (en) * | 2021-11-19 | 2023-05-25 | Renesas Electronics Corporation | Semiconductor device and trimming method of the same |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63273347A (ja) * | 1987-05-01 | 1988-11-10 | Oki Electric Ind Co Ltd | 抵抗器 |
JPH0290646A (ja) * | 1988-09-28 | 1990-03-30 | Nec Corp | 試験用半導体素子 |
JPH03274707A (ja) * | 1990-03-24 | 1991-12-05 | Anritsu Corp | 温度センサ |
JPH0422164A (ja) * | 1990-05-17 | 1992-01-27 | Toyota Autom Loom Works Ltd | 温度検出機能付半導体装置 |
JPH08306508A (ja) * | 1995-05-08 | 1996-11-22 | Nippondenso Co Ltd | 薄膜型サーミスタ素子およびその製造方法 |
JPH11354303A (ja) * | 1998-06-12 | 1999-12-24 | Nec Corp | 薄膜抵抗体及びその製造方法並びに当該薄膜抵抗体を内蔵した配線基板 |
JP2000292257A (ja) * | 1999-02-04 | 2000-10-20 | Nec Corp | 熱型赤外線センサ |
JP2002124639A (ja) * | 2000-08-09 | 2002-04-26 | Seiko Instruments Inc | 半導体装置及びその製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01302849A (ja) | 1988-05-31 | 1989-12-06 | Fujitsu Ltd | 半導体集積回路装置 |
US5281845A (en) * | 1991-04-30 | 1994-01-25 | Gte Control Devices Incorporated | PTCR device |
JPH0653417A (ja) * | 1992-05-19 | 1994-02-25 | Texas Instr Inc <Ti> | 抵抗器回路およびそれを形成する方法 |
US5602043A (en) * | 1995-01-03 | 1997-02-11 | Texas Instruments Incorporated | Monolithic thermal detector with pyroelectric film and method |
JP2772270B2 (ja) | 1995-11-22 | 1998-07-02 | 防衛庁技術研究本部長 | 酸化バナジウム膜の電気特性制御方法 |
JPH09229778A (ja) | 1996-02-26 | 1997-09-05 | Hitachi Ltd | Ic化温度センサ |
JPH10135005A (ja) | 1996-10-30 | 1998-05-22 | Fuji Electric Co Ltd | 限流素子の製造方法 |
US5844208A (en) * | 1997-04-04 | 1998-12-01 | Unisys Corporation | Temperature control system for an electronic device in which device temperature is estimated from heater temperature and heat sink temperature |
JP3067737B2 (ja) | 1998-05-18 | 2000-07-24 | 日本電気株式会社 | 酸化バナジウム膜のプラズマエッチング方法 |
JP2001196372A (ja) * | 2000-01-13 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置 |
JP2003344181A (ja) | 2002-05-22 | 2003-12-03 | Mitsumi Electric Co Ltd | 温度センサ回路 |
JP3869815B2 (ja) * | 2003-03-31 | 2007-01-17 | Necエレクトロニクス株式会社 | 半導体集積回路装置 |
-
2004
- 2004-03-30 JP JP2004101092A patent/JP4541742B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-24 US US11/087,587 patent/US7741692B2/en not_active Expired - Fee Related
- 2005-03-29 CN CNB2005100627396A patent/CN100394588C/zh not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63273347A (ja) * | 1987-05-01 | 1988-11-10 | Oki Electric Ind Co Ltd | 抵抗器 |
JPH0290646A (ja) * | 1988-09-28 | 1990-03-30 | Nec Corp | 試験用半導体素子 |
JPH03274707A (ja) * | 1990-03-24 | 1991-12-05 | Anritsu Corp | 温度センサ |
JPH0422164A (ja) * | 1990-05-17 | 1992-01-27 | Toyota Autom Loom Works Ltd | 温度検出機能付半導体装置 |
JPH08306508A (ja) * | 1995-05-08 | 1996-11-22 | Nippondenso Co Ltd | 薄膜型サーミスタ素子およびその製造方法 |
JPH11354303A (ja) * | 1998-06-12 | 1999-12-24 | Nec Corp | 薄膜抵抗体及びその製造方法並びに当該薄膜抵抗体を内蔵した配線基板 |
JP2000292257A (ja) * | 1999-02-04 | 2000-10-20 | Nec Corp | 熱型赤外線センサ |
JP2002124639A (ja) * | 2000-08-09 | 2002-04-26 | Seiko Instruments Inc | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1677671A (zh) | 2005-10-05 |
JP2005286237A (ja) | 2005-10-13 |
US7741692B2 (en) | 2010-06-22 |
US20050218470A1 (en) | 2005-10-06 |
CN100394588C (zh) | 2008-06-11 |
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