JP4524692B2 - 基板の製造方法及び液晶表示装置の製造方法 - Google Patents
基板の製造方法及び液晶表示装置の製造方法 Download PDFInfo
- Publication number
- JP4524692B2 JP4524692B2 JP2007192992A JP2007192992A JP4524692B2 JP 4524692 B2 JP4524692 B2 JP 4524692B2 JP 2007192992 A JP2007192992 A JP 2007192992A JP 2007192992 A JP2007192992 A JP 2007192992A JP 4524692 B2 JP4524692 B2 JP 4524692B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- exposed
- pair
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 142
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 49
- 238000000034 method Methods 0.000 claims description 148
- 239000007788 liquid Substances 0.000 claims description 88
- 230000008569 process Effects 0.000 claims description 59
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 45
- 239000011159 matrix material Substances 0.000 claims description 37
- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 230000002940 repellent Effects 0.000 claims description 33
- 239000005871 repellent Substances 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 18
- 239000007888 film coating Substances 0.000 claims description 15
- 238000009501 film coating Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 12
- 230000008719 thickening Effects 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 17
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 16
- 229910052731 fluorine Inorganic materials 0.000 description 16
- 239000011737 fluorine Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000010410 layer Substances 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 230000010365 information processing Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052752 metalloid Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第1の実施形態の基板の製造方法について説明する。図1は、第1の実施形態の基板の製造方法を示す工程図である。図1に示すように、本実施形態の基板の製造方法は、第1膜被覆工程にあたるステップS101、フォトレジスト膜被覆工程にあたるステップS102、ハーフトーン露光工程にあたるステップS103、現像工程にあたるステップS104、電極部及び配線部形成工程にあたるステップS105、バンク形成工程にあたるステップS106、撥液膜形成工程にあたるステップS107、処理液塗布工程にあたるステップS108、及び第2膜形成工程にあたるステップS109を有する。
(1)ガラス基板1上にTi膜2で電極部10及び配線部15を形成し、配線部15上に配線部15を厚膜化するAl膜14を形成する。このことより、厚膜化された配線部15の断面面積が大きくなり、配線部15の電気抵抗値は小さくなる。配線部15の電気抵抗値が小さくなることによって、配線部15の消費電力が小さくなる。よって、低消費電力化された基板の製造方法が実現できる。
第2の実施形態では、上述の実施形態と同じ内容については説明を省き、異なる内容を説明する。先ず、第2の実施形態の液晶表示装置について説明する。図13(a)は、第2の実施形態の液晶表示装置を示す平面図であり、図13(b)は、同図(a)のB−B線断面図である。図13に示すように、液晶表示装置100は、アクティブマトリクス基板を含むTFTアレイ基板110と対向基板120とが光硬化性の封止材であるシール材152によって貼り合わされている。このシール材152によって区画された領域内に液晶150が封入、保持されている。
(5)スイッチング素子部30に形成されたゲート電極部41の電極厚みd3に比べ、Al膜14で厚膜化されたゲート配線部40の配線厚みd4が厚い。また、ソース電極部43及びドレイン電極部44の電極厚みd5に比べ、Al膜17で厚膜化されたソース配線部42の配線厚みd6が厚い。配線厚みd4,d6が厚いことにより、ゲート配線部40及びソース配線部42の断面面積が大きくなる。このことから、ゲート配線部40及びソース配線部42の電気抵抗値を小さくすることができる。よって、液晶表示装置100の低消費電力化ができる。
第3の実施形態では、上述の実施形態と同じ内容については説明を省き、異なる内容を説明する。図19(a)は、第3の実施形態の電子機器としての携帯電話を示す斜視図であり、図19(b)は、ワープロ、パソコンなどの携帯型情報処理装置を示す斜視図であり、図19(c)は、腕時計型電子機器を示す斜視図である。図19に示すように、携帯電話500は、表示部501に液晶表示装置100を備えている。また、携帯型情報処理装置600には、キーボードなどの入力部601、情報処理本体603、表示部602が設けられ、この表示部602は液晶表示装置100を備えている。また、腕時計型電子機器700は、表示部701に液晶表示装置100を備えている。
(19)電子機器としての携帯電話500の表示部501、携帯型情報処理装置600の表示部602、腕時計型電子機器700の表示部701に液晶表示装置100を備える。すなわち、表示部501,602,701に、低消費電力化、耐久性の向上、または低コスト化された液晶表示装置100が備えられる。または、簡易的(省工程)、低材料コストで、電極厚みd3,d5より配線厚みd4,d6を厚く、Ti膜2,14が密着性良く、比較的容易にAl膜14,17の電気抵抗値を小さく、または歩留まり良く液晶表示装置100を形成する液晶表示装置の製造方法で形成された液晶表示装置100が備えられる。このことから、携帯電話500、携帯型情報処理装置600、腕時計型電子機器700に低消費電力化、耐久性の向上、または低コスト化を付与することができる。
Claims (4)
- 基板に第1金属元素を含む第1膜を乾式成膜法で被覆する第1膜被覆工程と、
前記第1膜にフォトレジスト膜を被覆するフォトレジスト膜被覆工程と、
前記フォトレジスト膜に露光部、前記露光部に接し略平行な帯状の平面形状を有する一対の非露光部、並びに、前記非露光部の内側領域及び前記非露光部の外側領域の一部である半露光部を形成するハーフトーン露光工程と、
前記露光部と、前記半露光部のうち露光されている上層部とを除去する現像工程と、
前記露光部の除去によって露出した前記第1膜をエッチングし、電極部及び配線部を形成する電極部及び配線部形成工程と、
前記上層部が除かれた前記半露光部を除去し前記電極部及び前記配線部を露出するとともに、一対の前記非露光部によって一対のバンクを形成するバンク形成工程と、
一対の前記バンクに挟まれた前記配線部と一対の前記バンクとで形成された凹部に、第2金属元素を含む処理液を液滴吐出法で塗布する処理液塗布工程と、
塗布された前記処理液を固化することによって、前記配線部上に前記第2金属元素を含む第2膜を形成し、前記配線部を厚膜化する第2膜形成工程とを有することを特徴とする基板の製造方法。 - アクティブマトリクス基板を備えた液晶表示装置の製造方法であって、
前記アクティブマトリクス基板に第1金属元素を含む第1膜を乾式成膜法で被覆する第1膜被覆工程と、
前記第1膜にフォトレジスト膜を被覆するフォトレジスト膜被覆工程と、
ハーフトーン露光によって、前記フォトレジスト膜に露光部、前記露光部に接し略平行な帯状の平面形状を有する一対の非露光部、並びに、前記非露光部の内側領域及び前記非露光部の外側領域の一部である半露光部を形成するハーフトーン露光工程と、
前記露光部と、前記半露光部のうち露光されている上層部とを除去する現像工程と、
前記露光部の除去によって露出した前記第1膜をエッチングし、電極部及び配線部を形成する電極部及び配線部形成工程と、
前記上層部が除かれた前記半露光部を除去し、前記電極部及び前記配線部を露出するとともに、一対の前記非露光部によって一対のバンクを形成するバンク形成工程と、
一対の前記バンクに挟まれた前記配線部と一対の前記バンクとで形成された凹部に、第2金属元素を含む処理液を液滴吐出法で塗布する処理液塗布工程と、
塗布された前記処理液を固化することによって、前記配線部上に前記第2金属元素を含む第2膜を形成し、前記配線部を厚膜化する第2膜形成工程とを有することを特徴とする液晶表示装置の製造方法。 - 請求項2に記載の液晶表示装置の製造方法において、
前記アクティブマトリクス基板が無機基板で形成され、
前記第1金属元素がAl、Ti、Cr、Zr、Nb、Mo、Taから選ばれる金属元素であり、
前記第2金属元素がAl、Cu、Ni、Agから選ばれる金属元素であることを特徴とする液晶表示装置の製造方法。 - 請求項3に記載の液晶表示装置の製造方法において、
前記バンク形成工程と前記処理液塗布工程との間に、一対の前記バンクに撥液膜を形成する撥液膜形成工程を有することを特徴とする液晶表示装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007192992A JP4524692B2 (ja) | 2007-07-25 | 2007-07-25 | 基板の製造方法及び液晶表示装置の製造方法 |
US12/166,386 US7808606B2 (en) | 2007-07-25 | 2008-07-02 | Method for manufacturing substrate, liquid crystal display apparatus and method for manufacturing the same, and electronic device |
KR1020080072267A KR101065131B1 (ko) | 2007-07-25 | 2008-07-24 | 기판의 제조 방법, 액정 표시 장치, 액정 표시 장치의 제조방법 및 전자기기 |
CN2008101300205A CN101354509B (zh) | 2007-07-25 | 2008-07-24 | 基板的制造方法、液晶显示装置的制造方法、电子设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007192992A JP4524692B2 (ja) | 2007-07-25 | 2007-07-25 | 基板の製造方法及び液晶表示装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009032771A JP2009032771A (ja) | 2009-02-12 |
JP4524692B2 true JP4524692B2 (ja) | 2010-08-18 |
Family
ID=40295006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007192992A Expired - Fee Related JP4524692B2 (ja) | 2007-07-25 | 2007-07-25 | 基板の製造方法及び液晶表示装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7808606B2 (ja) |
JP (1) | JP4524692B2 (ja) |
KR (1) | KR101065131B1 (ja) |
CN (1) | CN101354509B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5809289B2 (ja) * | 2011-11-25 | 2015-11-10 | シャープ株式会社 | 液晶表示装置 |
US9052163B2 (en) * | 2013-08-09 | 2015-06-09 | Weigand Combat Handguns Inc. | Adjustable scope mount for a projectile weapon and methods of using and making thereof |
JP2017188508A (ja) * | 2016-04-01 | 2017-10-12 | 株式会社ジャパンディスプレイ | 半導体装置、表示装置 |
KR20230134947A (ko) | 2022-03-15 | 2023-09-22 | 현대오토에버 주식회사 | 오피스 공간 관리 방법 및 장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0382130A (ja) * | 1989-08-25 | 1991-04-08 | Fujitsu Ltd | 薄膜トランジスタマトリクスの製造方法 |
JPH0478826A (ja) * | 1990-07-23 | 1992-03-12 | Hitachi Ltd | 液晶表示装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE44267E1 (en) | 1995-10-03 | 2013-06-04 | Seiko Epson Corporation | Method to prevent static destruction of an active element comprised in a liquid crystal display device |
JP3933497B2 (ja) * | 2002-03-01 | 2007-06-20 | シャープ株式会社 | 表示装置の製造方法 |
JP4565799B2 (ja) * | 2002-07-01 | 2010-10-20 | 大林精工株式会社 | 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置 |
JP2005019955A (ja) * | 2003-05-30 | 2005-01-20 | Seiko Epson Corp | 薄膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器 |
JP5027475B2 (ja) | 2005-10-18 | 2012-09-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置および液晶表示装置の作製方法 |
TWI483048B (zh) * | 2005-10-18 | 2015-05-01 | Semiconductor Energy Lab | 液晶顯示裝置 |
JP2007310334A (ja) * | 2006-05-19 | 2007-11-29 | Mikuni Denshi Kk | ハーフトーン露光法を用いた液晶表示装置の製造法 |
-
2007
- 2007-07-25 JP JP2007192992A patent/JP4524692B2/ja not_active Expired - Fee Related
-
2008
- 2008-07-02 US US12/166,386 patent/US7808606B2/en not_active Expired - Fee Related
- 2008-07-24 CN CN2008101300205A patent/CN101354509B/zh not_active Expired - Fee Related
- 2008-07-24 KR KR1020080072267A patent/KR101065131B1/ko not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0382130A (ja) * | 1989-08-25 | 1991-04-08 | Fujitsu Ltd | 薄膜トランジスタマトリクスの製造方法 |
JPH0478826A (ja) * | 1990-07-23 | 1992-03-12 | Hitachi Ltd | 液晶表示装置 |
Also Published As
Publication number | Publication date |
---|---|
KR101065131B1 (ko) | 2011-09-16 |
CN101354509A (zh) | 2009-01-28 |
JP2009032771A (ja) | 2009-02-12 |
KR20090012129A (ko) | 2009-02-02 |
CN101354509B (zh) | 2010-12-01 |
US7808606B2 (en) | 2010-10-05 |
US20090027605A1 (en) | 2009-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7220682B2 (en) | Pattern and fabricating method therefor, device and fabricating method therefor, electro-optical apparatus, electronic apparatus, and method for fabricating active matrix substrate | |
JP4240018B2 (ja) | 膜パターンの形成方法、デバイス及びその製造方法、電気光学装置、並びに電子機器 | |
US7294566B2 (en) | Method for forming wiring pattern, method for manufacturing device, device, electro-optic apparatus, and electronic equipment | |
US20100184289A1 (en) | Substrate and method of manufacturing the same | |
US20070264814A1 (en) | Method for forming metal wiring line, method for manufacturing active matrix substrate, device, electro-optical device, and electronic apparatus | |
US20060188661A1 (en) | Method of forming film pattern, method of manufacturing device, electro-optical device, and electronic apparatus | |
JP4524692B2 (ja) | 基板の製造方法及び液晶表示装置の製造方法 | |
TWI270979B (en) | Method of manufacturing active matrix substrate, active matrix substrate, electro-optical device, and electronic apparatus | |
JP2007243081A (ja) | 薄膜トランジスタ基板及び薄膜トランジスタ基板の生成方法 | |
JP2007300012A (ja) | 金属配線形成方法、アクティブマトリクス基板の製造方法、デバイス及び電気光学装置並びに電子機器 | |
JP2005013985A (ja) | 膜パターン形成方法、デバイス及びその製造方法、電気光学装置、並びに電子機器、アクティブマトリクス基板の製造方法、アクティブマトリクス基板 | |
JP2006212555A (ja) | 膜パターンの形成方法、デバイス及びその製造方法、電気光学装置、並びに電子機器 | |
US8421941B2 (en) | TFT substrate and method of manufacturing the same | |
JP5458486B2 (ja) | アレイ基板、表示装置、及びその製造方法 | |
US7560297B2 (en) | Active matrix substrate, manufacturing method thereof, electro-optical device, and electronic apparatus | |
JP2004157151A (ja) | 表示装置用マトリクス基板およびその製造方法 | |
JP2006202961A (ja) | 印刷パターンを用いた処理方法及び印刷パターンの製造装置 | |
KR100634829B1 (ko) | 액정표시소자의 제조방법 | |
JP2007139953A (ja) | アクティブマトリクス基板とその製造方法、及び電気光学装置並びに電子機器 | |
JP2007140324A (ja) | 電気光学装置、電気光学装置の製造方法、電子機器 | |
JP2007103759A (ja) | 膜パターンの形成方法、デバイスの製造方法、デバイス、電気光学装置、及び電子機器 | |
JP2008058455A (ja) | アクティブマトリクス基板の製造方法及び液晶表示装置の製造方法 | |
JP2007017820A (ja) | 表示装置とその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091208 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100208 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100209 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100506 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100519 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130611 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |