JP4518886B2 - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 126
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000010410 layer Substances 0.000 claims description 222
- 239000000758 substrate Substances 0.000 claims description 219
- 150000001875 compounds Chemical class 0.000 claims description 59
- 239000011241 protective layer Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 29
- 239000002243 precursor Substances 0.000 claims description 16
- 238000000926 separation method Methods 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 23
- 239000002994 raw material Substances 0.000 description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- UIESIEAPEWREMY-UHFFFAOYSA-N hydridoarsenic(2.) (triplet) Chemical compound [AsH] UIESIEAPEWREMY-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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Description
B.Asper et al.,Electron.Lett.35,p.1024(1999) J.Schermer et al.,Appl.Phys.Lett.76,p.2131(2000)
まず、MOCVD法を用い、半導体基板2であるn型GaAs基板上に図1に示す層構造を作製した。すなわち、50mm径のGaAs基板(1E18cm-3、Siドープ)を縦型MOCVD装置に投入し、まず、基板保護層3としてIn0.5Ga0.5P層を0.1μm形成した。続いてエッチング分離のための中間層4としてAlAs層を0.02μm形成し、エッチング停止のためにInGaP層を0.1μm成長し、太陽電池層構造を順次成長させ、素子層5を形成した。
Claims (14)
- 半導体基板上に、基板材料とは異なる材料からなる基板保護層を形成する工程と、
基板保護層上に中間層を形成する工程と、
中間層上に、少なくとも一部がエピタキシャル成長によって形成されるように、化合物半導体素子層を形成する工程と、
中間層を前記化合物半導体素子層および前記半導体基板をエッチングすることのない液体または気体でエッチングすることによって半導体基板および基板保護層から化合物半導体素子層を分離する工程と、
前記基板保護層を前記半導体基板とのエッチング選択比80%以上の割合でエッチング除去できるエッチング溶液でエッチングすることによって、半導体基板から中間層の残りの部分および基板保護層を除去する工程とを含み、
前記化合物半導体素子層が、裏面電界層・ベース層・エミッタ層・窓層の構造物がトンネル接合された2つの層構造体を含むことを特徴とする半導体素子の製造方法。 - 半導体基板として、エッチングによって、中間層の残りの部分および基板保護層を除去した後の半導体基板を繰り返し用いる、請求項1に記載の半導体素子の製造方法。
- 基板保護層がエピタキシャル成長によって半導体基板上に形成される、請求項1または2に記載の方法。
- 中間層がエピタキシャル成長によって基板保護層上に形成される、請求項3に記載の方法。
- 基板保護層が半導体基板とのエッチング選択比98%以上の割合でエッチング除去できるものである、請求項1に記載の方法。
- 基板保護層が、半導体基板と格子整合するものである、請求項1〜5のいずれかに記載の方法。
- 中間層は、基板保護層をエッチングすることのない液体または気体によってエッチングできる材料からなる、請求項1に記載の方法。
- 分離工程を行う前に、複数のセル前駆体間に位置する、中間層の選択された部分を露出させるために、化合物半導体素子層の部分をエッチングする工程をさらに含む、請求項1〜7のいずれかに記載の方法。
- 化合物半導体素子層の部分をエッチングする工程の前に、化合物半導体素子層に表面電極を形成する工程をさらに含む、請求項8に記載の方法。
- 前記化合物半導体素子層の部分をエッチングする工程の後であって分離工程の前に、セル前駆体に支持基板を接着させる、請求項8または9に記載の方法。
- 分離工程により分離された後のセル前駆体の裏面に電極を形成する工程をさらに含む、請求項8〜10のいずれかに記載の方法。
- 分離工程により分離された後のセル前駆体から支持基板を分離する工程をさらに含む、請求項8〜11のいずれかに記載の方法。
- セル前駆体への支持基板の接着は除去可能なワックスを用いて行われる、請求項10〜12のいずれかに記載の方法。
- ワックスを溶解させるために、分離工程により分離された後のセル前駆体を加熱し、それによってセル前駆体から支持基板を分離する工程と、
セル前駆体を有機溶剤に浸漬し、残りのワックスを除去する工程とを含む、請求項13に記載の方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004262854A JP4518886B2 (ja) | 2004-09-09 | 2004-09-09 | 半導体素子の製造方法 |
EP05019490A EP1635383B1 (en) | 2004-09-09 | 2005-09-07 | Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof |
US11/220,908 US20060054900A1 (en) | 2004-09-09 | 2005-09-08 | Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof |
US11/976,863 US7635638B2 (en) | 2004-09-09 | 2007-10-29 | Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof |
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JP2004262854A JP4518886B2 (ja) | 2004-09-09 | 2004-09-09 | 半導体素子の製造方法 |
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JP4518886B2 true JP4518886B2 (ja) | 2010-08-04 |
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JP6836022B2 (ja) | 2018-12-10 | 2021-02-24 | 株式会社フィルネックス | 半導体基板、半導体基板の製造方法及び半導体素子の製造方法 |
US11764326B2 (en) * | 2020-08-28 | 2023-09-19 | Alliance For Sustainable Energy, Llc | Metamorphic two-junction photovoltaic devices with removable graded buffers |
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US20010047751A1 (en) * | 1998-11-24 | 2001-12-06 | Andrew Y. Kim | Method of producing device quality (a1) ingap alloys on lattice-mismatched substrates |
DE60042187D1 (de) * | 1999-06-09 | 2009-06-25 | Toshiba Kawasaki Kk | Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren |
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JP2004247610A (ja) * | 2003-02-14 | 2004-09-02 | Canon Inc | 基板の製造方法 |
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- 2004-09-09 JP JP2004262854A patent/JP4518886B2/ja not_active Expired - Fee Related
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2005
- 2005-09-07 EP EP05019490A patent/EP1635383B1/en not_active Not-in-force
- 2005-09-08 US US11/220,908 patent/US20060054900A1/en not_active Abandoned
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JP2005019590A (ja) * | 2003-06-25 | 2005-01-20 | Oki Data Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7635638B2 (en) | 2009-12-22 |
EP1635383B1 (en) | 2013-04-03 |
JP2006080305A (ja) | 2006-03-23 |
EP1635383A2 (en) | 2006-03-15 |
EP1635383A3 (en) | 2008-06-04 |
US20080070388A1 (en) | 2008-03-20 |
US20060054900A1 (en) | 2006-03-16 |
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