JP4492589B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4492589B2 JP4492589B2 JP2006169560A JP2006169560A JP4492589B2 JP 4492589 B2 JP4492589 B2 JP 4492589B2 JP 2006169560 A JP2006169560 A JP 2006169560A JP 2006169560 A JP2006169560 A JP 2006169560A JP 4492589 B2 JP4492589 B2 JP 4492589B2
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- 239000004065 semiconductor Substances 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 238000000034 method Methods 0.000 claims description 30
- 238000005229 chemical vapour deposition Methods 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000005121 nitriding Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 122
- 239000007789 gas Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052735 hafnium Inorganic materials 0.000 description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 hafnium nitride Chemical class 0.000 description 1
- KUVFGOLWQIXGBP-UHFFFAOYSA-N hafnium(4+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Hf+4] KUVFGOLWQIXGBP-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
- H01L29/4958—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo with a multiple layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本発明の半導体装置の製造方法に係わる実施の形態の一例を、PMOSFETの製造方法を例にとり、図1〜図2の製造工程断面図によって説明する。本実施形態においては、ゲート電極を埋め込み形成する例について説明する。
上記第1実施形態においては、ゲート電極を埋め込み形成する例について説明したが、本発明は、半導体基板上にゲート絶縁膜を介してゲート電極をパターン形成する場合であっても、適用可能である。ここで、本実施形態の製造方法について、図4の製造工程断面図を用いて説明する。なお、各構成要素に用いることが可能な材料等は、上記第1実施形態と同様であるため、一例のみを記載する。
Claims (3)
- 半導体基板上にゲート絶縁膜を介して金属を含むゲート電極を形成する工程を有する半導体装置の製造方法であって、
前記ゲート電極を形成する工程では、
前記ゲート絶縁膜上に、前記ゲート電極の仕事関数を規定する第1ゲート金属電極層を形成する第1工程と、
前記第1ゲート金属電極層上に、次の第3工程の化学的気相成長法に用いる成膜ガスに対してバリア性を有する第2ゲート電極層を、当該第1ゲート金属電極層の表面層のみを窒化処理して形成する第2工程と、
化学的気相成長法により、前記第2ゲート電極層上に、前記第1ゲート金属電極層よりも抵抗の低い第3ゲート電極層を形成する第3工程とを行う
ことを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記半導体基板上の絶縁膜に設けられた当該半導体基板に達する状態の凹部に、当該凹部の内壁を覆う状態で設けられた前記ゲート絶縁膜を介して前記ゲート電極を埋め込み形成する
ことを特徴とする半導体装置の製造方法。 - 請求項1または2に記載の半導体装置の製造方法において、
前記第3ゲート電極層はタングステンで形成されている
ことを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006169560A JP4492589B2 (ja) | 2006-06-20 | 2006-06-20 | 半導体装置の製造方法 |
US11/764,501 US8847292B2 (en) | 2006-06-20 | 2007-06-18 | Method for manufacturing semiconductor device and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006169560A JP4492589B2 (ja) | 2006-06-20 | 2006-06-20 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008004578A JP2008004578A (ja) | 2008-01-10 |
JP4492589B2 true JP4492589B2 (ja) | 2010-06-30 |
Family
ID=39008757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006169560A Expired - Fee Related JP4492589B2 (ja) | 2006-06-20 | 2006-06-20 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (1) | US8847292B2 (ja) |
JP (1) | JP4492589B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100939777B1 (ko) * | 2007-11-30 | 2010-01-29 | 주식회사 하이닉스반도체 | 텅스텐막 형성방법 및 이를 이용한 반도체 소자의 배선형성방법 |
US7911028B2 (en) * | 2008-07-31 | 2011-03-22 | Nanya Technology Corp. | Semiconductor device and method of manufacturing the same |
JP5883563B2 (ja) * | 2011-01-31 | 2016-03-15 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9076817B2 (en) | 2011-08-04 | 2015-07-07 | International Business Machines Corporation | Epitaxial extension CMOS transistor |
JP6285668B2 (ja) * | 2013-09-03 | 2018-02-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
US20150076624A1 (en) * | 2013-09-19 | 2015-03-19 | GlobalFoundries, Inc. | Integrated circuits having smooth metal gates and methods for fabricating same |
KR102055333B1 (ko) * | 2014-01-29 | 2020-01-22 | 에스케이하이닉스 주식회사 | 듀얼일함수 매립게이트형 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치 |
TWI784335B (zh) * | 2020-10-30 | 2022-11-21 | 台灣奈米碳素股份有限公司 | 三維半導體二極體裝置的製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09246378A (ja) * | 1996-03-08 | 1997-09-19 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH10177971A (ja) * | 1996-12-18 | 1998-06-30 | Tokyo Electron Ltd | CVD−TiN膜の成膜方法および半導体装置の製造方法 |
JPH11195621A (ja) * | 1997-11-05 | 1999-07-21 | Tokyo Electron Ltd | バリアメタル、その形成方法、ゲート電極及びその形成方法 |
JP2001118804A (ja) * | 1999-10-22 | 2001-04-27 | Matsushita Electronics Industry Corp | 半導体装置の製造方法および半導体装置 |
JP2001284466A (ja) * | 2000-03-29 | 2001-10-12 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2002208695A (ja) * | 2001-01-11 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2003258084A (ja) * | 2002-02-27 | 2003-09-12 | Seiko Instruments Inc | 半導体装置の多層配線構造の形成方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4856297B2 (ja) * | 1997-12-02 | 2012-01-18 | 公益財団法人国際科学振興財団 | 半導体装置の製造方法 |
JP3851752B2 (ja) * | 2000-03-27 | 2006-11-29 | 株式会社東芝 | 半導体装置の製造方法 |
US6436840B1 (en) * | 2000-10-19 | 2002-08-20 | Advanced Micro Devices, Inc. | Metal gate with CVD amorphous silicon layer and a barrier layer for CMOS devices and method of making with a replacement gate process |
US6642131B2 (en) * | 2001-06-21 | 2003-11-04 | Matsushita Electric Industrial Co., Ltd. | Method of forming a silicon-containing metal-oxide gate dielectric by depositing a high dielectric constant film on a silicon substrate and diffusing silicon from the substrate into the high dielectric constant film |
US6921711B2 (en) * | 2003-09-09 | 2005-07-26 | International Business Machines Corporation | Method for forming metal replacement gate of high performance |
US7126199B2 (en) * | 2004-09-27 | 2006-10-24 | Intel Corporation | Multilayer metal gate electrode |
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2006
- 2006-06-20 JP JP2006169560A patent/JP4492589B2/ja not_active Expired - Fee Related
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2007
- 2007-06-18 US US11/764,501 patent/US8847292B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09246378A (ja) * | 1996-03-08 | 1997-09-19 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH10177971A (ja) * | 1996-12-18 | 1998-06-30 | Tokyo Electron Ltd | CVD−TiN膜の成膜方法および半導体装置の製造方法 |
JPH11195621A (ja) * | 1997-11-05 | 1999-07-21 | Tokyo Electron Ltd | バリアメタル、その形成方法、ゲート電極及びその形成方法 |
JP2001118804A (ja) * | 1999-10-22 | 2001-04-27 | Matsushita Electronics Industry Corp | 半導体装置の製造方法および半導体装置 |
JP2001284466A (ja) * | 2000-03-29 | 2001-10-12 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2002208695A (ja) * | 2001-01-11 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2003258084A (ja) * | 2002-02-27 | 2003-09-12 | Seiko Instruments Inc | 半導体装置の多層配線構造の形成方法 |
Also Published As
Publication number | Publication date |
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US8847292B2 (en) | 2014-09-30 |
JP2008004578A (ja) | 2008-01-10 |
US20080111167A1 (en) | 2008-05-15 |
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