JP4473285B2 - 発光装置およびその製造方法 - Google Patents
発光装置およびその製造方法 Download PDFInfo
- Publication number
- JP4473285B2 JP4473285B2 JP2007064916A JP2007064916A JP4473285B2 JP 4473285 B2 JP4473285 B2 JP 4473285B2 JP 2007064916 A JP2007064916 A JP 2007064916A JP 2007064916 A JP2007064916 A JP 2007064916A JP 4473285 B2 JP4473285 B2 JP 4473285B2
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- JP
- Japan
- Prior art keywords
- light
- phosphor
- particle size
- light emitting
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
実施例の大粒径蛍光体16の代わりに、平均粒径(D50)が25μmのCaAlSiN3:Euからなる組成の赤色蛍光体(発光ピーク波長660nm)を使用し、実施例の小粒径蛍光体18の代わりに、平均粒径(D50)が9μmのSrAl1.42Si3.58O0.42N6.58:Ceからなる組成の緑色蛍光体(発光ピーク波長557nm)を使用した以外は、実施例と同様の方法により、図8に示すようなカップ13内の構造の発光装置を作製した。
実施例の大粒径蛍光体16の代わりに、小粒径蛍光体18として平均粒径(D50)が9μmのSrAl1.45Si3.55O0.45N6.55:Ceからなる組成の緑色蛍光体(発光ピーク波長557nm)を使用し、実施例の小粒径蛍光体18の代わりに、大粒径蛍光体16として平均粒径(D50)が25μmのCaAlSiN3:Euからなる組成の赤色蛍光体(発光ピーク波長660nm)を使用した以外は、実施例と同様の方法により、図10に示すようなカップ13内の構造の発光装置を作製した。
実施例の大粒径蛍光体16の代わりに、小粒径蛍光体18として平均粒径(D50)が7μmのCaAlSiN3:Euからなる組成の赤色蛍光体(発光ピーク波長659nm)を使用し、実施例の小粒径蛍光体18の代わりに、大粒径蛍光体16として平均粒径(D50)が25μmのSrAl1.25Si4.5O1.25N7.1:Ceからなる組成の緑色蛍光体(発光ピーク波長556nm)を使用した以外は、実施例と同様の方法により、図12に示すようなカップ13内の構造の発光装置を作製した。
12a、12b リードフレーム
13 カップ(凹部)
13a 底面
14 発光素子
16 大粒径蛍光体
18 小粒径蛍光体
20 封止部材
22 導電性ワイヤ
24 モールド部材
26 金属製トレイ
28 金属板
30 直流電源
Claims (4)
- 所定のピーク波長の光を発する発光素子と、この発光素子からの光を吸収して発光素子からの光のピーク波長より長波長側にピーク波長を有する光を発する大粒径蛍光体と、この大粒径蛍光体よりも粒径が小さく且つ大粒径蛍光体と発光素子の少なくとも一方からの光を吸収してその少なくとも一方からの光のピーク波長より長波長側にピーク波長を有する光を発する小粒径蛍光体とを用意し、大粒径蛍光体の上方に対向するように発光素子を配置し、大粒径蛍光体を負に帯電させて、正に帯電した発光素子の表面に大粒径蛍光体を静電吸着させて大粒径蛍光体の層を形成した後、小粒径蛍光体を含む封止部材によって発光素子および大粒径蛍光体の層を封止することを特徴とする、発光装置の製造方法。
- 前記大粒径蛍光体の粒径が10μm以上且つ50μm未満であり、前記小粒径蛍光体の粒径が1μm以上且つ10μm未満であることを特徴とする、請求項1に記載の発光装置の製造方法。
- 前記発光素子が420nm以上且つ490nm未満の領域にピーク波長を有する光を発する発光素子であり、前記大粒径蛍光体が490nm以上且つ590nm未満の領域にピーク波長を有する光を発する蛍光体であり、前記小粒径蛍光体が590nm以上且つ780nm以下の領域にピーク波長を有する光を発する蛍光体であることを特徴とする、請求項1または2に記載の発光装置の製造方法。
- 前記封止部材に前記小粒径蛍光体を分散させることを特徴とする、請求項1乃至3のいずれかに記載の発光装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007064916A JP4473285B2 (ja) | 2006-03-31 | 2007-03-14 | 発光装置およびその製造方法 |
US11/691,509 US8469760B2 (en) | 2006-03-31 | 2007-03-27 | Light emitting device and method for producing same |
US12/568,251 US20100013375A1 (en) | 2006-03-31 | 2009-09-28 | Light emitting device and method for producing same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006097307 | 2006-03-31 | ||
JP2007064916A JP4473285B2 (ja) | 2006-03-31 | 2007-03-14 | 発光装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007294895A JP2007294895A (ja) | 2007-11-08 |
JP4473285B2 true JP4473285B2 (ja) | 2010-06-02 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2007064916A Expired - Fee Related JP4473285B2 (ja) | 2006-03-31 | 2007-03-14 | 発光装置およびその製造方法 |
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JP (1) | JP4473285B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8323748B2 (en) * | 2009-05-15 | 2012-12-04 | Achrolux Inc. | Methods for forming uniform particle layers of phosphor material on a surface |
JP2014165225A (ja) * | 2013-02-21 | 2014-09-08 | Toshiba Lighting & Technology Corp | 発光モジュールおよび照明装置 |
JP2014203932A (ja) | 2013-04-03 | 2014-10-27 | 株式会社東芝 | 発光装置 |
JP2015070156A (ja) * | 2013-09-30 | 2015-04-13 | サンケン電気株式会社 | 発光装置 |
JP6668996B2 (ja) | 2016-07-29 | 2020-03-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP6912743B2 (ja) * | 2016-07-29 | 2021-08-04 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
DE112022004250T5 (de) * | 2021-08-31 | 2024-06-27 | Citizen Electronics Co., Ltd. | Licht emittierende led-vorrichtung |
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2007
- 2007-03-14 JP JP2007064916A patent/JP4473285B2/ja not_active Expired - Fee Related
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JP2007294895A (ja) | 2007-11-08 |
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