JP4469188B2 - 電界放出素子の製造方法 - Google Patents
電界放出素子の製造方法 Download PDFInfo
- Publication number
- JP4469188B2 JP4469188B2 JP2004035195A JP2004035195A JP4469188B2 JP 4469188 B2 JP4469188 B2 JP 4469188B2 JP 2004035195 A JP2004035195 A JP 2004035195A JP 2004035195 A JP2004035195 A JP 2004035195A JP 4469188 B2 JP4469188 B2 JP 4469188B2
- Authority
- JP
- Japan
- Prior art keywords
- electron
- field emission
- layer
- manufacturing
- emission device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 239000000463 material Substances 0.000 claims description 88
- 238000000034 method Methods 0.000 claims description 47
- 238000002955 isolation Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 230000009257 reactivity Effects 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000011852 carbon nanoparticle Substances 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cold Cathode And The Manufacture (AREA)
Description
20 カソード電極、
30 ゲート絶縁層、
30a 井戸型貫通孔、
40 ゲート電極、
40a ゲートホール、
50a エミッタ、
60 犠牲層、
70 隔離層。
Claims (11)
- a)基板にカソード電極が形成され、前記カソード電極上にはカソード電極を一部露出させる貫通孔を有するゲート絶縁層及び前記貫通孔に対応するゲートホールを有するゲート電極が順次に積層されている基板構造物を準備する段階と、
b)前記基板構造物で前記貫通孔の下部に露出された前記カソード電極を除いて基板構造物の表面及び前記貫通孔の内壁の全体に犠牲層を形成する段階と、
c)前記犠牲層上に前記ゲート電極上にエミッタを形成するための電子放出物質と前記犠牲層との接触を防止するための隔離層を形成する段階と、
d)前記犠牲層が形成された基板構造物の表面に電子放出物質を所定厚さに塗布して前記貫通孔を前記電子放出物質で埋め込む電子放出物質層を形成する段階と、
e)ゲート電極の表面と前記貫通孔の内壁に形成された前記犠牲層を除去するエッチャントによるリフトオフを実施して犠牲層上に形成される隔離層及び電子放出物質を除去し、前記貫通孔の内側領域に前記電子放出物質層によるエミッタを形成する段階と、
f)前記電子エミッタを焼成する段階と、を含み、
前記犠牲層および前記電子放出物質は感光性物質を含む樹脂を含み、
前記隔離層は、前記感光性物質と反応性がない物質、または、前記リフトオフ工程を妨害しない程度であって前記感光性物質と極めて弱い反応性を有する物質からなることを特徴とする電界放出素子の製造方法。 - 前記電子放出物質でカーボンナノチューブ及びナノ粒子のうち何れか1つを使用することを特徴とする請求項1に記載の電界放出素子の製造方法。
- 前記電子放出物質層に導電性物質を含ませることを特徴とする請求項1または2に記載の電界放出素子の製造方法。
- 前記導電性物質は銀(Ag)を含むことを特徴とする請求項3に記載の電界放出素子の製造方法。
- 前記隔離層に抵抗性物質を含ませることを特徴とする請求項1に記載の電界放出素子の製造方法。
- 前記抵抗性物質は、SiO2、MgO、a−Si、p−Siのうち少なくとも何れか1つを含むことを特徴とする請求項5に記載の電界放出素子の製造方法。
- 前記隔離層はペースト、ゾルゲル、そして、スラリー溶液のうち何れか1つで形成することを特徴とする請求項1に記載の電界放出素子の製造方法。
- 前記電子放出物質層は伝導性物質を含むものであって、ペースト、ゾルゲル、そして、スラリーのうち何れか1つで形成することを特徴とする請求項1から3のいずれか1項に記載の電界放出素子の製造方法。
- 前記伝導性物質は銀(Ag)であることを特徴とする請求項8に記載の電界放出素子の製造方法。
- 前記電子放出物質層及び犠牲層にフォトレジストが含まれていることを特徴とする請求項1に記載の電界放出素子の製造方法。
- 前記隔離層は、IPA希釈液(IPA/H2O)にポリビニルアルコールを含有する溶液によって形成することを特徴とする請求項1または7に記載の電界放出素子の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0008762A KR100513727B1 (ko) | 2003-02-12 | 2003-02-12 | 전계방출소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004247306A JP2004247306A (ja) | 2004-09-02 |
JP4469188B2 true JP4469188B2 (ja) | 2010-05-26 |
Family
ID=32733141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004035195A Expired - Lifetime JP4469188B2 (ja) | 2003-02-12 | 2004-02-12 | 電界放出素子の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6815238B2 (ja) |
EP (1) | EP1450387B1 (ja) |
JP (1) | JP4469188B2 (ja) |
KR (1) | KR100513727B1 (ja) |
CN (1) | CN100547713C (ja) |
DE (1) | DE602004011127T2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7044822B2 (en) * | 2002-12-20 | 2006-05-16 | Samsung Sdi Co., Ltd. | Method of manufacturing a field emission device utilizing the sacrificial layer |
KR100723429B1 (ko) * | 2006-07-31 | 2007-05-30 | 삼성전자주식회사 | 금속 리간드와 탄소나노튜브를 이용한 가스 센서의제조방법 |
KR100754410B1 (ko) * | 2006-08-31 | 2007-08-31 | 삼성전자주식회사 | 가스 센서의 제조방법 |
ITMI20071262A1 (it) * | 2007-06-22 | 2008-12-23 | Eni Spa | Metodo per l'identificazione di batteri propano ossidanti |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6710539B2 (en) * | 1998-09-02 | 2004-03-23 | Micron Technology, Inc. | Field emission devices having structure for reduced emitter tip to gate spacing |
KR20000074609A (ko) * | 1999-05-24 | 2000-12-15 | 김순택 | 카본 나노 튜브를 이용한 전계 방출 어레이 및 그 제조방법 |
KR20010011136A (ko) * | 1999-07-26 | 2001-02-15 | 정선종 | 나노구조를 에미터로 사용한 삼극형 전계 방출 에미터의 구조및 그 제조방법 |
US6741019B1 (en) * | 1999-10-18 | 2004-05-25 | Agere Systems, Inc. | Article comprising aligned nanowires |
KR100480773B1 (ko) | 2000-01-07 | 2005-04-06 | 삼성에스디아이 주식회사 | 카본 나노 튜브를 이용한 3극 전계방출소자의 제작방법 |
US6682383B2 (en) * | 2000-05-17 | 2004-01-27 | Electronics And Telecommunications Research Institute | Cathode structure for field emission device and method of fabricating the same |
US6440763B1 (en) * | 2001-03-22 | 2002-08-27 | The United States Of America As Represented By The Secretary Of The Navy | Methods for manufacture of self-aligned integrally gated nanofilament field emitter cell and array |
JP2003016954A (ja) * | 2001-04-25 | 2003-01-17 | Sony Corp | 電子放出装置及びその製造方法、冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置及びその製造方法 |
US6703252B2 (en) * | 2002-01-31 | 2004-03-09 | Hewlett-Packard Development Company, L.P. | Method of manufacturing an emitter |
-
2003
- 2003-02-12 KR KR10-2003-0008762A patent/KR100513727B1/ko not_active IP Right Cessation
-
2004
- 2004-02-11 DE DE602004011127T patent/DE602004011127T2/de not_active Expired - Lifetime
- 2004-02-11 EP EP04250726A patent/EP1450387B1/en not_active Expired - Fee Related
- 2004-02-12 CN CNB2004100352789A patent/CN100547713C/zh not_active Expired - Fee Related
- 2004-02-12 US US10/776,511 patent/US6815238B2/en not_active Expired - Fee Related
- 2004-02-12 JP JP2004035195A patent/JP4469188B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE602004011127D1 (de) | 2008-02-21 |
EP1450387A3 (en) | 2005-02-23 |
DE602004011127T2 (de) | 2009-01-02 |
JP2004247306A (ja) | 2004-09-02 |
CN100547713C (zh) | 2009-10-07 |
EP1450387A2 (en) | 2004-08-25 |
KR100513727B1 (ko) | 2005-09-08 |
EP1450387B1 (en) | 2008-01-09 |
US20040161867A1 (en) | 2004-08-19 |
KR20040072321A (ko) | 2004-08-18 |
US6815238B2 (en) | 2004-11-09 |
CN1530997A (zh) | 2004-09-22 |
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