JP4456112B2 - 集積回路部およびその製造方法 - Google Patents
集積回路部およびその製造方法 Download PDFInfo
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- JP4456112B2 JP4456112B2 JP2006523006A JP2006523006A JP4456112B2 JP 4456112 B2 JP4456112 B2 JP 4456112B2 JP 2006523006 A JP2006523006 A JP 2006523006A JP 2006523006 A JP2006523006 A JP 2006523006A JP 4456112 B2 JP4456112 B2 JP 4456112B2
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- conductive structure
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Description
・ビアでは、主要領域の法線方向、または法線方向とは逆の方向に、電流が流れるが、主要領域と平行方向には電流が流れない。
・ビアは、主要領域に平行な断面の大部分に配置され、あるいは、下部相互接続部または上部相互接続部に完全に重なるように配置されている。
・上部相互接続部または下部相互接続部に重ならないビアの部分、すなわち、これらの相互接続部を埋め合わせる部分は、集積回路部の機能に影響を与えない。すなわち、このような部分は、特に、集積回路部の機能に必要とされる導電接続のために用いられない。
・外部導電構造部と内部導電構造部との間にあるコンタクトゾーンに隣接している内部導電構造部の領域の法線方向から見ると、コンタクトゾーンは、コンタクト領域には重なっておらず、または部分的にのみ重なっており、
・完全にまたは部分的に外部導電構造部を含む切り欠き部の底部は、法線方向から見ると、コンタクト領域の少なくとも半分またはコンタクト領域の全面と重なって配置されている。
・コンタクト領域50と最も近い内部相互接続部22との間の通電部において、段状部分を避けることができる。
・信頼性を従来と同じように保ちつつ、許容可能な電流密度を大きくすることができる。あるいは、信頼性を著しく高めつつ、電流密度を従来と同じように保つことができる。
・回路設計上の利点がある。例えば、導電のために必要な領域を小さくすることができる。
・配置上の変更以外に、従来の一連の方法を変更する必要がない。
・層中の段状部分における局部的な欠陥はもはや生じない。これにより信頼性を、より高めることができる。
・より高い絶対電流を用いて、信頼性を従来と同等に維持することができる。これにより、回路設計において、別の構成にする可能性を追求することができる。例えば、チップ毎の接続領域の数を少なくすることができる。
・本発明の集積回路部により、機構に対する高い要求を満たすことができる。これにより、導電構造部の障壁層または基板付近の導電構造部を壊すことなしに、コンタクト領域に、機構的に負荷することができる。
図1は、銅の導電構造部とアルミニウムのボンディング接続部とを有する、集積回路部の断面図である。
図2は、集積回路部の平面図である。
図3は、集積回路部の製造工程を示す図である。
図4は、本発明を利用していない集積回路部の断面図である。
Claims (13)
- 電気絶縁性の絶縁層(34,36)の切り欠き部(37)に、少なくとも部分的または全体的に配置された導電性の外部導電構造部(44)と、
前記切り欠き部(37)の一方側である該切り欠き部(37)の底部に配置されると共に、前記切り欠き部(37)の底部のコンタクトゾーンにおいて前記外部導電構造部(44)と隣接する導電性の内部導電構造部(22)と、
前記切り欠き部(37)の他方側において、前記外部導電構造部(44)に配置されたコンタクト領域(B1)とを有し、
前記コンタクトゾーンは、該コンタクトゾーンに隣接する前記内部導電構造部(22)の領域に対する法線方向において、前記コンタクト領域とは重ならず、
前記切り欠き部(37)の底部は、前記法線方向において、前記コンタクト領域の少なくとも半分の領域または前記コンタクト領域の全領域と重なるように配置され、
前記外部導電構造部(44)は、前記切り欠き部(37)の外側で前記絶縁層(34、36)と隣接する少なくとも1つの端部領域を有しており、
前記コンタクト領域(B1)と前記内部導電構造部(22)との間に配置される、前記外部導電構造部(44)の主要電流路であって、コンタクト領域(B1)を流れる全電流量の50%を超える電流が流れる領域である該主要電流路から距離をおいた位置に前記切り欠き部(37)の端部(38,40)は配置され、該距離は、10nmよりも長いことを特徴とする集積回路部(10)。 - 前記切り欠き部(37)の端部(38,40)は、前記主要電流路の外側に配置されていることを特徴とする請求項1に記載の集積回路部(10)。
- 前記内部導電構造部(22)は、金属膜(14)において横方向に電流を流すための相互接続部をも含む該金属膜(14)の一部分であることを特徴とする請求項1または2に記載の集積回路部(10)。
- 前記外部導電構造部(44)は、ボンディング接続部(52)またははんだ接続部を有することを特徴とする請求項1〜3のいずれか1項に記載の集積回路部(10)。
- 前記内部導電構造部(22)は、ダマシン法により生成され、
前記内部導電構造部(22)は、銅からなる導電体を含み、
前記外部導電構造部(44)は、アルミニウムからなる導電体を含むことを特徴とする請求項1から4までの何れか1項に記載の集積回路部(10)。 - 前記外部導電構造部(44)は、前記コンタクトゾーンにおいて障壁層(42)を含み、該障壁層(42)は、窒化チタン層であることを特徴とする請求項1〜5のいずれか1項に記載の集積回路部(10)。
- 前記外部導電構造部(44)は、前記コンタクト領域の少なくとも1つの端部領域、または前記コンタクト領域の周囲全体に沿って、1つのパッシべーション層または連続したパッシベーション層(46,48)により被覆されていることを特徴とする請求項1〜6のいずれか1項に記載の集積回路部(10)。
- 前記外部導電構造部(44)は、前記切り欠き部(37)の外側において、前記切り欠き部(37)の周囲に位置すると共に、前記絶縁層(34,36)に隣接する端部領域を有することを特徴とする請求項1〜7のいずれか1項に記載の集積回路部(10)。
- 前記コンタクトゾーンは平坦なゾーンであり、
および/または前記集積回路部は、特に複数の集積半導体素子を主要領域に搭載した半導体基板を有する集積回路部(10)に設けられていることを特徴とする請求項1〜8のいずれか1項に記載の集積回路部(10)。 - 集積回路部(10)の動作中に、半導体基板の主要領域に対して法線方向、または該法線方向とは反対の方向にのみ電流を流す構造のみを有する、金属膜または金属膜層が、前記外部導電構造部(44)と前記内部導電構造部(22)との間に配置されていないことを特徴とする請求項1〜9のいずれか1項に記載の集積回路部(10)。
- 請求項1〜10のいずれか1項に記載の集積回路部(10)を製造する方法であって、
基板の主要領域に複数の電子素子を形成する工程と、
少なくとも1つの内部導電構造部(22,82)が、前記集積回路部の動作中に前記主要領域に対して平行に電流を流す相互接続部(82)として形成される、複数の内部導電構造部(22,82)を備える内部金属膜(14)を生成する工程と、
複数の外部導電構造部(44)を備える外部金属膜であって、
そのうちの少なくとも1つの外部導電構造部(44)が、コンタクトゾーンにおいて内部導電構造部(22)に隣接し、
前記外部導電構造部(44)が、少なくとも部分的または全体的に、電気絶縁性の絶縁層(34,36)における切り欠き部(37)に配置される外部金属膜を、前記内部金属膜(14)に隣接させる工程と、
前記外部導電構造部(44)にコンタクト領域(B1)を形成する工程と、が上述の順番で行なわれ、
前記コンタクトゾーンは、前記切り欠き部の底部に隣接する内部導電構造部(22)の領域に対する法線方向(N)において、コンタクト領域とは重ならず、
前記切り欠き部の底部は、前記法線方向において、前記コンタクト領域の少なくとも半分の領域または前記コンタクト領域の全領域と重なるように配置され、
前記外部導電構造部(44)は、前記切り欠き部(37)の外側で前記絶縁層(34、36)と隣接する少なくとも1つの端部領域を有し、
前記コンタクト領域(B1)と前記内部導電構造部(22)との間に配置される、前記外部導電構造部(44)の主要電流路であって、コンタクト領域(B1)を流れる全電流量の50%を超える電流が流れる領域である該主要電流路から距離をおいた位置に前記切り欠き部(37)の端部(38,40)が配置され、該距離を10nmよりも長く構成することを特徴とする集積回路部(10)の製造方法。 - 少なくとも1つの外部導電構造部(44)を、前記集積回路部の動作中に前記主要領域に対して平行に電流を流す相互接続部(44)として形成することを特徴とする請求項11に記載の集積回路部(10)の製造方法。
- 前記内部金属膜を、平坦化工程を含むダマシン法により生成し
および/または、外側金属膜(16)を、層の堆積、およびその後のフォトリソグラフィ法による前記層のパターン化により生成することを特徴とする請求項11または12に記載の集積回路部(10)の製造方法。
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US6734047B1 (en) * | 2002-11-27 | 2004-05-11 | International Business Machines Corporation | Thinning of fuse passivation after C4 formation |
JP4170103B2 (ja) * | 2003-01-30 | 2008-10-22 | Necエレクトロニクス株式会社 | 半導体装置、および半導体装置の製造方法 |
US6844626B2 (en) * | 2003-05-23 | 2005-01-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond pad scheme for Cu process |
US6890828B2 (en) * | 2003-06-05 | 2005-05-10 | International Business Machines Corporation | Method for supporting a bond pad in a multilevel interconnect structure and support structure formed thereby |
JP2005019493A (ja) * | 2003-06-24 | 2005-01-20 | Renesas Technology Corp | 半導体装置 |
DE10337569B4 (de) * | 2003-08-14 | 2008-12-11 | Infineon Technologies Ag | Integrierte Anschlussanordnung und Herstellungsverfahren |
US7294565B2 (en) * | 2003-10-01 | 2007-11-13 | International Business Machines Corporation | Method of fabricating a wire bond pad with Ni/Au metallization |
US7057296B2 (en) * | 2003-10-29 | 2006-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding pad structure |
US7394161B2 (en) * | 2003-12-08 | 2008-07-01 | Megica Corporation | Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto |
JP4528035B2 (ja) * | 2004-06-18 | 2010-08-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7242102B2 (en) * | 2004-07-08 | 2007-07-10 | Spansion Llc | Bond pad structure for copper metallization having increased reliability and method for fabricating same |
US7361993B2 (en) * | 2005-05-09 | 2008-04-22 | International Business Machines Corporation | Terminal pad structures and methods of fabricating same |
-
2003
- 2003-08-14 DE DE10337569A patent/DE10337569B4/de not_active Expired - Fee Related
-
2004
- 2004-07-21 CN CNB2004800233383A patent/CN100433319C/zh not_active Expired - Fee Related
- 2004-07-21 JP JP2006523006A patent/JP4456112B2/ja not_active Expired - Fee Related
- 2004-07-21 WO PCT/EP2004/051569 patent/WO2005020321A1/de active Search and Examination
- 2004-07-21 EP EP04766283A patent/EP1654760A1/de not_active Ceased
-
2006
- 2006-02-09 US US11/350,518 patent/US7619309B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
JP2007502532A (ja) | 2007-02-08 |
US7964494B2 (en) | 2011-06-21 |
DE10337569A1 (de) | 2005-03-24 |
WO2005020321A1 (de) | 2005-03-03 |
CN1836327A (zh) | 2006-09-20 |
US7619309B2 (en) | 2009-11-17 |
US20100007027A1 (en) | 2010-01-14 |
DE10337569B4 (de) | 2008-12-11 |
CN100433319C (zh) | 2008-11-12 |
US20060192289A1 (en) | 2006-08-31 |
EP1654760A1 (de) | 2006-05-10 |
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