JP4448934B2 - Bi系酸化物超電導薄膜の作製法 - Google Patents
Bi系酸化物超電導薄膜の作製法 Download PDFInfo
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- JP4448934B2 JP4448934B2 JP2005058246A JP2005058246A JP4448934B2 JP 4448934 B2 JP4448934 B2 JP 4448934B2 JP 2005058246 A JP2005058246 A JP 2005058246A JP 2005058246 A JP2005058246 A JP 2005058246A JP 4448934 B2 JP4448934 B2 JP 4448934B2
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- thin film
- based oxide
- axis
- oxide superconducting
- temperature
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- 239000010409 thin film Substances 0.000 title claims description 69
- 238000002360 preparation method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 44
- 239000013078 crystal Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 239000002887 superconductor Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002427 LaSrAlO4 Inorganic materials 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005668 Josephson effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
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- Chemical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
単結晶基板を用いて、有機金属化学気相成長法(MOCVD)により結晶性の良いa軸配向したBi-2223超電導薄膜を作製した。MOCVD装置を図3に示す。成膜条件は、有機金属原料にBi(C6H5)3, Sr(DPM)2,
Ca(DPM)2及びCu(DPM)2(DPM:dipivaloylmethan)を用い、それぞれ72℃,176℃,161℃及び80℃に保ち、Arキャリヤガス流量100、300,300及び70sccm、全圧50torr、酸素分圧23torr、基板温度は555℃でa軸(又はb軸)配向したBi−2223薄膜をヘテロエピタキシャル成長させ、その後、ガス雰囲気を変えることなく連続的に、基板温度677℃の高温でホモエピタキシャル成長させて行った。
Claims (7)
- 単結晶基板上にBi系酸化物超電導薄膜を作製する方法において、該単結晶基板は、LaSrAlO 4 、LaSrGaO 4 、α−Al 2 O 3 又はNdAlO 3 のいずれかであり、該薄膜の単結晶の格子定数は、該基板の単結晶の格子定数の整数倍(但し1倍を除く)に整合し、第1の温度において、該薄膜のヘテロエピタキシャル成長を行い、次に、該薄膜の上に、該第1の温度よりも高い第2の温度において、該薄膜のホモエピタキシャル成長を行い、a軸又はb軸が基板面に対して垂直に配向した薄膜を成長させることを特徴とするBi系酸化物超電導薄膜の作製方法。
- 上記Bi系酸化物超電導薄膜は、Bi2Sr2Ca2Cu3O10±X(Xは、1より小さい正の数)又はBi2Sr2CuO6±Y(Yは、1より小さい正の数)薄膜であることを特徴とする請求項1に記載のBi系酸化物超電導薄膜の作製方法。
- 上記第1の温度は、500℃ないし600℃であることを特徴とする請求項1ないし2のいずれかに記載のBi系酸化物超電導薄膜の作製方法。
- 上記第2の温度は、650℃ないし750℃であることを特徴とする請求項1ないし3のいずれかに記載のBi系酸化物超電導薄膜の作製方法。
- 単結晶基板上に体積されたBi系酸化物超電導薄膜であって、該単結晶基板は、LaSrAlO 4 、LaSrGaO 4 、α−Al 2 O 3 又はNdAlO 3 のいずれかであり、該薄膜の単結晶の格子定数は、該基板の単結晶の格子定数の整数倍(但し1倍を除く)に整合し、第1の温度において、該薄膜のヘテロエピタキシャル成長を行い、次に、該薄膜の上に、該第1の温度よりも高い第2の温度において、該薄膜のホモエピタキシャル成長を行うことにより作製されてなり、a軸又はb軸が基板面に対して垂直に配向していることを特徴とするBi系酸化物超電導薄膜。
- 上記Bi系酸化物超電導薄膜は、Bi2Sr2Ca2Cu3O10±X(Xは、1より小さい正の数)又はBi2Sr2CuO6±Y(Yは、1より小さい正の数)薄膜であることを特徴とする請求項5に記載のBi系酸化物超電導薄膜。
- ジョセフソン素子であって、請求項5又は6に記載のBi系酸化物超電導薄膜を用いて作製したことを特徴とするジョセフソン素子。
Priority Applications (2)
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JP2005058246A JP4448934B2 (ja) | 2005-03-02 | 2005-03-02 | Bi系酸化物超電導薄膜の作製法 |
US11/363,653 US7981840B2 (en) | 2005-03-02 | 2006-02-28 | Method of manufacturing Bi-based oxide superconductor thin films |
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JP2005058246A JP4448934B2 (ja) | 2005-03-02 | 2005-03-02 | Bi系酸化物超電導薄膜の作製法 |
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JP2006244838A JP2006244838A (ja) | 2006-09-14 |
JP4448934B2 true JP4448934B2 (ja) | 2010-04-14 |
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CN102127437A (zh) * | 2010-12-15 | 2011-07-20 | 中国科学院安徽光学精密机械研究所 | 掺杂ⅱa族稀土氧化物发光材料及其熔体法生长方法 |
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