JP4432586B2 - 静電気対策部品 - Google Patents
静電気対策部品 Download PDFInfo
- Publication number
- JP4432586B2 JP4432586B2 JP2004109779A JP2004109779A JP4432586B2 JP 4432586 B2 JP4432586 B2 JP 4432586B2 JP 2004109779 A JP2004109779 A JP 2004109779A JP 2004109779 A JP2004109779 A JP 2004109779A JP 4432586 B2 JP4432586 B2 JP 4432586B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- varistor
- bismuth oxide
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010410 layer Substances 0.000 claims description 102
- 239000000758 substrate Substances 0.000 claims description 91
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 36
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 36
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 26
- 239000011521 glass Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 239000012790 adhesive layer Substances 0.000 claims description 15
- 239000002241 glass-ceramic Substances 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 7
- 230000003068 static effect Effects 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 230000002829 reductive effect Effects 0.000 description 9
- 238000005245 sintering Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/148—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals embracing or surrounding the resistive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
- Laminated Bodies (AREA)
Description
12 バリスタ層
13 基板
14 端子
15 グリーンシート
16 酸化ビスマス拡散層
17 酸化ビスマス粒子
18 接着層
19 ガラスセラミック層
20 アルミナ基板
21 ガラス拡散層
Claims (12)
- バリスタ層と、前記バリスタ層を積層した基板とを備え、前記バリスタ層は少なくとも酸化ビスマスを含有する材料からなり、前記バリスタ層と前記基板とを焼結させて前記酸化ビスマスを前記基板に拡散させ、前記基板に酸化ビスマス拡散層を設けた静電気対策部品。
- 前記基板はアルミナ基板とした請求項1記載の静電気対策部品。
- 前記基板はガラスを含有するガラスセラミック層を前記アルミナ基板に積層して形成した請求項2記載の静電気対策部品。
- 前記ガラスを前記アルミナ基板に拡散させ、前記アルミナ基板にガラス拡散層を設けた請求項3記載の静電気対策部品。
- 前記ガラスセラミック層と前記アルミナ基板との間に接着層を設けるとともに、前記接着層を介して前記ガラスを前記アルミナ基板に拡散させ、前記アルミナ基板にガラス拡散層を設けた請求項3記載の静電気対策部品。
- 前記バリスタ層にガラスを含有するガラスセラミック層を積層した請求項1記載の静電気対策部品。
- 前記バリスタ層は、バリスタ材料の粉末を含有する未焼成のグリーンシートを複数積層するとともに焼成して形成しており、前記バリスタ材料の粉末の平均粒径を0.5〜2.0μmとした請求項1記載の静電気対策部品。
- 前記バリスタ材料は、主成分を酸化亜鉛とするとともに、添加物を少なくとも酸化ビスマスとし、前記酸化ビスマスの粉末の平均粒径を1.0μm以下とした請求項7記載の静電気対策部品。
- 前記バリスタ層と前記基板との間に接着層を設けるとともに、前記接着層を介して前記酸化ビスマスを前記基板に拡散させた請求項1記載の静電気対策部品。
- 前記基板は、電子部品回路を形成した回路基板とした請求項1記載の静電気対策部品。
- 前記基板には、前記バリスタ層を積層した側と反対の側に、電子部品回路を形成した回路層を積層した請求項1記載の静電気対策部品。
- 前記基板は、低焼成温度セラミック基板とした請求項1記載の静電気対策部品。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004109779A JP4432586B2 (ja) | 2004-04-02 | 2004-04-02 | 静電気対策部品 |
US10/591,255 US7864025B2 (en) | 2004-04-02 | 2005-03-24 | Component with countermeasure to static electricity |
PCT/JP2005/005322 WO2005098877A1 (ja) | 2004-04-02 | 2005-03-24 | 静電気対策部品 |
EP05727186A EP1715494A4 (en) | 2004-04-02 | 2005-03-24 | COMPONENT WITH COUNTERMEASURE AGAINST STATIC ELECTRICITY |
CN2005800119448A CN1942981B (zh) | 2004-04-02 | 2005-03-24 | 抗静电部件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004109779A JP4432586B2 (ja) | 2004-04-02 | 2004-04-02 | 静電気対策部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005294673A JP2005294673A (ja) | 2005-10-20 |
JP4432586B2 true JP4432586B2 (ja) | 2010-03-17 |
Family
ID=35125337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004109779A Expired - Fee Related JP4432586B2 (ja) | 2004-04-02 | 2004-04-02 | 静電気対策部品 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7864025B2 (ja) |
EP (1) | EP1715494A4 (ja) |
JP (1) | JP4432586B2 (ja) |
CN (1) | CN1942981B (ja) |
WO (1) | WO2005098877A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006269876A (ja) | 2005-03-25 | 2006-10-05 | Matsushita Electric Ind Co Ltd | 静電気対策部品 |
EP1858033A4 (en) * | 2005-04-01 | 2013-10-09 | Panasonic Corp | VARISTOR AND ELECTRONIC COMPONENT MODULE USING THE SAME |
US8026787B2 (en) * | 2006-03-10 | 2011-09-27 | Joinset Co., Ltd. | Ceramic component element and ceramic component and method for the same |
US7741948B2 (en) * | 2006-10-02 | 2010-06-22 | Inpaq Technology Co., Ltd. | Laminated variable resistor |
US8508325B2 (en) | 2010-12-06 | 2013-08-13 | Tdk Corporation | Chip varistor and chip varistor manufacturing method |
JP5696623B2 (ja) * | 2011-08-29 | 2015-04-08 | Tdk株式会社 | チップバリスタ |
JP5799672B2 (ja) * | 2011-08-29 | 2015-10-28 | Tdk株式会社 | チップバリスタ |
KR101309326B1 (ko) * | 2012-05-30 | 2013-09-16 | 삼성전기주식회사 | 적층 칩 전자부품, 그 실장 기판 및 포장체 |
KR101309479B1 (ko) * | 2012-05-30 | 2013-09-23 | 삼성전기주식회사 | 적층 칩 전자부품, 그 실장 기판 및 포장체 |
KR101483259B1 (ko) | 2012-08-28 | 2015-01-14 | 주식회사 아모센스 | 무수축 바리스타 기판 및 그 제조 방법 |
WO2014035143A1 (ko) * | 2012-08-28 | 2014-03-06 | ㈜ 아모엘이디 | 무수축 바리스타 기판 및 그 제조 방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1346851A (en) * | 1971-05-21 | 1974-02-13 | Matsushita Electric Ind Co Ltd | Varistors |
DE2735484C2 (de) * | 1977-08-05 | 1984-06-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von Dickfilm-Varistoren mit Zinkoxid als Hauptkomponente |
JPS5810842B2 (ja) * | 1978-12-05 | 1983-02-28 | 松下電器産業株式会社 | 厚膜バリスタの製造方法 |
JPS5577103A (en) * | 1978-12-05 | 1980-06-10 | Matsushita Electric Ind Co Ltd | Method of fabricating thick varistor |
JPS57184207A (en) * | 1981-05-08 | 1982-11-12 | Matsushita Electric Ind Co Ltd | Thick film varistor |
JPS5885502A (ja) * | 1981-11-17 | 1983-05-21 | 松下電器産業株式会社 | 厚膜バリスタの製造法 |
JPS63316405A (ja) * | 1987-06-18 | 1988-12-23 | Matsushita Electric Ind Co Ltd | 厚膜バリスタ |
CN1034370A (zh) | 1988-01-22 | 1989-08-02 | 上海科技大学 | 电子束辐射合成水凝胶材料的方法 |
JP2970191B2 (ja) * | 1992-03-27 | 1999-11-02 | 松下電器産業株式会社 | 酸化亜鉛バリスタ用電極材料 |
EP0581969B1 (en) | 1992-02-25 | 1999-10-06 | Matsushita Electric Industrial Co., Ltd. | Zinc oxide varistor and production thereof |
JP3453857B2 (ja) | 1994-07-20 | 2003-10-06 | 松下電器産業株式会社 | 積層型バリスタの製造方法 |
TW394961B (en) | 1997-03-20 | 2000-06-21 | Ceratech Corp | Low capacitance chip varistor and fabrication method thereof |
JP3832071B2 (ja) * | 1998-02-10 | 2006-10-11 | 株式会社村田製作所 | 積層バリスタ |
JPH11251152A (ja) * | 1998-03-03 | 1999-09-17 | Matsushita Electric Ind Co Ltd | 複合部品およびその製造方法 |
JP2001326108A (ja) * | 2000-05-18 | 2001-11-22 | Mitsubishi Electric Corp | 電圧非直線抵抗体およびその製造方法 |
CN1251250C (zh) | 2001-04-05 | 2006-04-12 | 佳邦科技股份有限公司 | 暂态过电压保护元件的材料 |
-
2004
- 2004-04-02 JP JP2004109779A patent/JP4432586B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-24 WO PCT/JP2005/005322 patent/WO2005098877A1/ja active Application Filing
- 2005-03-24 CN CN2005800119448A patent/CN1942981B/zh not_active Expired - Fee Related
- 2005-03-24 EP EP05727186A patent/EP1715494A4/en not_active Withdrawn
- 2005-03-24 US US10/591,255 patent/US7864025B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7864025B2 (en) | 2011-01-04 |
US20070171025A1 (en) | 2007-07-26 |
JP2005294673A (ja) | 2005-10-20 |
CN1942981B (zh) | 2010-05-05 |
CN1942981A (zh) | 2007-04-04 |
EP1715494A4 (en) | 2010-03-17 |
WO2005098877A1 (ja) | 2005-10-20 |
EP1715494A1 (en) | 2006-10-25 |
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