JP4412559B2 - 平板ディスプレイ装置 - Google Patents
平板ディスプレイ装置 Download PDFInfo
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- JP4412559B2 JP4412559B2 JP2006217153A JP2006217153A JP4412559B2 JP 4412559 B2 JP4412559 B2 JP 4412559B2 JP 2006217153 A JP2006217153 A JP 2006217153A JP 2006217153 A JP2006217153 A JP 2006217153A JP 4412559 B2 JP4412559 B2 JP 4412559B2
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- 239000010408 film Substances 0.000 claims description 85
- 230000001681 protective effect Effects 0.000 claims description 40
- 239000011229 interlayer Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 16
- 239000000565 sealant Substances 0.000 claims description 16
- 239000011368 organic material Substances 0.000 claims description 9
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
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- 125000006850 spacer group Chemical group 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims 1
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- 239000004065 semiconductor Substances 0.000 description 10
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- 229910052782 aluminium Inorganic materials 0.000 description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- -1 SiNx Chemical compound 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 239000002019 doping agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
まず、図4及び図5Aを参照しながら、本発明の第1の実施形態にかかる平板ディスプレイ装置の構成について詳細に説明する。図4は、本実施形態にかかる平板ディスプレイ装置の概略的な構成を示す平面図である。図4中では、平板ディスプレイ装置の一例として有機発光ディスプレイ装置を示す。また、図5Aは、図4のV−V線による断面図である。以下では、本実施形態にかかる平板ディスプレイ装置の一例として有機発光ディスプレイ装置について、説明する。しかし、本発明はこれに限定されるものではなく、その他の平板ディスプレイ装置にも適用可能である。
次に、以下では、図7を参照して、本発明の第2の実施形態について説明する。図7は、本実施形態にかかる平板ディスプレイ装置の概略的な構成を示す断面図である。
110 基板
120 バッファ層
130 半導体層
140 ゲート絶縁膜
150 ゲート電極
160 層間絶縁膜
170 ソース/ドレイン電極
182 保護膜
210 第1電極
211 コンタクトホール
220 画素定義膜
230 中間層
400 第2電極
410 第1配線
420 第2配線
430 導電層
900 密封部材
810 シーラント
Claims (9)
- ディスプレイ部を有する基板と;
前記ディスプレイ部に配置されたゲート電極と;
前記ディスプレイ部の外側に配置された第1配線と;
前記ゲート電極及び前記第1配線を覆う層間絶縁膜と;
前記層間絶縁膜上に配置されたソース電極及びドレイン電極と;
前記層間絶縁膜上に配置され、前記ディスプレイ部と前記第1配線との間に配置された導電層と;
前記導電層の少なくとも一部を露出し、前記ソース電極、前記ドレイン電極及び前記層間絶縁膜を覆う保護膜と;
前記保護膜上の前記ディスプレイ部の外側に配置された第2配線と;
前記保護膜上の前記ディスプレイ部に配置された第1電極と;
前記第2配線、前記導電層及び前記第1電極それぞれの少なくとも一部を露出し、前記保護膜上に配置された画素定義膜と;
前記画素定義膜の露出された部分上に配置され、少なくとも発光層を含む中間層と;
前記第2配線と前記導電層とに電気的に連結され、前記画素定義膜及び前記中間層上に配置された第2電極と;
を備えることを特徴とする、有機発光ディスプレイ装置。 - 前記ソース電極、前記ドレイン電極及び前記ゲート電極を備える薄膜トランジスタにおいて、
前記第1配線は、前記薄膜トランジスタの前記ゲート電極と同じ層上に備えられることを特徴とする、請求項1に記載の有機発光ディスプレイ装置。 - 前記第1配線は、前記薄膜トランジスタの前記ゲート電極と同じ物質で形成されたことを特徴とする、請求項2に記載の有機発光ディスプレイ装置。
- 前記薄膜トランジスタの前記ソース電極及び前記ドレイン電極と同じ層上に配置される第3配線をさらに備え、
前記第3配線は、前記層間絶縁膜に形成されたコンタクトホールを介して前記第1配線に電気的に連結されることを特徴とする、請求項1〜3のいずれか1項に記載の有機発光ディスプレイ装置。 - 前記保護膜上に配置され、前記薄膜トランジスタの前記ソース電極及び前記ドレイン電極のうち少なくとも何れか一つの電極に電気的に連結される第1電極をさらに備え、
前記第1電極は、前記保護膜に形成された前記薄膜トランジスタの前記ソース電極及び前記ドレイン電極のうち少なくとも何れか一つの前記電極を露出させるコンタクトホールを介して、前記薄膜トランジスタの前記ソース電極及び前記ドレイン電極のうち少なくとも何れか一つの前記電極に電気的に連結されることを特徴とする、請求項1〜4のいずれか1項に記載の有機発光ディスプレイ装置。 - 前記第1電極は、前記第2配線と同じ物質で形成されたことを特徴とする、請求項5に記載の有機発光ディスプレイ装置。
- 前記第2配線の上部にシーラントをさらに備えることを特徴とする、請求項1〜6のいずれか1項に記載の有機発光ディスプレイ装置。
- 前記シーラントは、スペーサを備えることを特徴とする、請求項7に記載の有機発光ディスプレイ装置。
- 前記第1配線と前記第2配線との間に介在された前記少なくとも二つの絶縁層のうち少なくとも一つの絶縁層は、無機物から形成された絶縁層であることを特徴とする、請求項1〜8のいずれか1項に記載の有機発光ディスプレイ装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050104922A KR100730156B1 (ko) | 2005-11-03 | 2005-11-03 | 평판 디스플레이 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007128041A JP2007128041A (ja) | 2007-05-24 |
JP4412559B2 true JP4412559B2 (ja) | 2010-02-10 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006217153A Active JP4412559B2 (ja) | 2005-11-03 | 2006-08-09 | 平板ディスプレイ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8222809B2 (ja) |
EP (1) | EP1783835B1 (ja) |
JP (1) | JP4412559B2 (ja) |
KR (1) | KR100730156B1 (ja) |
CN (1) | CN1971902B (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7851996B2 (en) * | 2005-11-16 | 2010-12-14 | Canon Kabushiki Kaisha | Display apparatus |
KR100759666B1 (ko) * | 2006-01-27 | 2007-09-17 | 삼성에스디아이 주식회사 | 평판 표시장치 및 그의 제조방법 |
JP2010257957A (ja) * | 2009-04-01 | 2010-11-11 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置 |
KR101074805B1 (ko) * | 2009-12-04 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
KR101800285B1 (ko) | 2010-10-04 | 2017-12-21 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR20130128940A (ko) * | 2012-05-18 | 2013-11-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
KR102013893B1 (ko) | 2012-08-20 | 2019-08-26 | 삼성디스플레이 주식회사 | 평판표시장치 및 그의 제조방법 |
CN103943649B (zh) * | 2013-02-15 | 2017-10-03 | 上海天马微电子有限公司 | Oled显示面板及其驱动方法 |
US9362345B2 (en) * | 2013-05-31 | 2016-06-07 | Samsung Display Co., Ltd. | Organic light emitting display apparatus and method of manufacturing the same |
JP6155856B2 (ja) * | 2013-06-03 | 2017-07-05 | 住友化学株式会社 | 表示装置 |
KR102151752B1 (ko) | 2013-08-05 | 2020-09-04 | 삼성디스플레이 주식회사 | 유기발광 디스플레이 장치 및 그 제조방법 |
KR102360783B1 (ko) * | 2014-09-16 | 2022-02-10 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102284756B1 (ko) * | 2014-09-23 | 2021-08-03 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
CN104538566A (zh) * | 2015-01-22 | 2015-04-22 | 深圳市华星光电技术有限公司 | Oled的封装方法及oled封装结构 |
KR102477299B1 (ko) * | 2015-06-12 | 2022-12-14 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102561113B1 (ko) * | 2015-08-13 | 2023-07-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
US11211582B2 (en) * | 2016-01-15 | 2021-12-28 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus with protection layer surrounding the pixel electrode |
KR102537439B1 (ko) * | 2016-01-15 | 2023-05-30 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
JP2017168308A (ja) * | 2016-03-16 | 2017-09-21 | 株式会社Joled | 表示装置 |
KR102628849B1 (ko) * | 2016-03-24 | 2024-01-25 | 삼성디스플레이 주식회사 | 유기발광 디스플레이 장치 |
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EP1783835A3 (en) | 2010-06-30 |
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US20070096633A1 (en) | 2007-05-03 |
US8222809B2 (en) | 2012-07-17 |
EP1783835A2 (en) | 2007-05-09 |
JP2007128041A (ja) | 2007-05-24 |
CN1971902A (zh) | 2007-05-30 |
KR100730156B1 (ko) | 2007-06-19 |
EP1783835B1 (en) | 2012-08-15 |
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