JP4406416B2 - 波長変換型の発光ダイオードパッケージ - Google Patents
波長変換型の発光ダイオードパッケージ Download PDFInfo
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- JP4406416B2 JP4406416B2 JP2006194478A JP2006194478A JP4406416B2 JP 4406416 B2 JP4406416 B2 JP 4406416B2 JP 2006194478 A JP2006194478 A JP 2006194478A JP 2006194478 A JP2006194478 A JP 2006194478A JP 4406416 B2 JP4406416 B2 JP 4406416B2
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- refractive index
- emitting diode
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- 238000006243 chemical reaction Methods 0.000 title claims description 28
- 229920005989 resin Polymers 0.000 claims description 72
- 239000011347 resin Substances 0.000 claims description 72
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 62
- 239000002245 particle Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 39
- 238000000605 extraction Methods 0.000 claims description 20
- -1 AlGaInP Inorganic materials 0.000 claims description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910004541 SiN Inorganic materials 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- 229910002367 SrTiO Inorganic materials 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 5
- 239000002041 carbon nanotube Substances 0.000 claims description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229920002050 silicone resin Polymers 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 14
- 238000000465 moulding Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
図3は本発明の一実施形態による波長変換型の発光ダイオードパッケージを示す断面図である。
11b、31b 上部パッケージ基板
11、31、41、51、61 パッケージ基板
12a、12b、32a、32b リードフレーム
15、35、45、55、65 発光ダイオードチップ
18 透明樹脂層
19、39、49、59、69 蛍光体
36、46、56、66 低屈折率領域
37、47、57、67 高屈折率層
37a、47a、57a、67a 凸凹(パターン)
38、48、58、68 (蛍光体含有樹)脂層
47b 無反射層
Claims (12)
- リードフレームを有するパッケージ基板と、
前記リードフレームに電気的に接続されるよう前記パッケージ基板上に実装された発光ダイオードと、
前記発光ダイオードを覆うように形成され、第1屈折率を有する低屈折率領域と、
前記低屈折率領域上に直接形成され、上面に光抽出のための凸凹パターンが形成され前記第1屈折率より高い第2屈折率を有する高屈折率層、及び
前記高屈折率層上に直接形成され、前記発光ダイオードから放出される光の波長を変換させるための蛍光体を含有し前記第2屈折率より低い第3屈折率を有する蛍光体含有樹脂層を含み、
前記凸凹パターンは前記蛍光体含有樹脂層で散乱され前記パッケージ基板に向かって前記高屈折率層に進行した光が前記高屈折率層と前記低屈折率領域との間の界面で全反射され、再び上部方向に進行するときに前記高屈折率層と前記蛍光体含有樹脂層との間の界面を通過して抽出されやすくするものであることを特徴とする波長変換型の発光ダイオードパッケージ。 - 前記低屈折率領域は空き空間領域で、前記第1屈折率は約1であることを特徴とする請求項1に記載の波長変換型の発光ダイオードパッケージ。
- 前記低屈折率領域は透明樹脂で充填された領域であることを特徴とする請求項1に記載の波長変換型の発光ダイオードパッケージ。
- 前記透明樹脂はエポキシ樹脂、シリコーン樹脂またはその混合樹脂であることを特徴とする請求項3に記載の波長変換型の発光ダイオードパッケージ。
- 前記高屈折率層は1.8〜10の屈折率を有することを特徴とする請求項1〜4のいずれか一項に記載の波長変換型の発光ダイオードパッケージ。
- 前記高屈折率層の凸凹周期は500μm以下の範囲であることを特徴とする請求項1〜5のいずれか一項に記載の波長変換型の発光ダイオードパッケージ。
- 前記高屈折率層は高屈折率粒子が混合された透明樹脂層であり、前記凸凹パターンは前記樹脂層の表面に形成されることを特徴とする請求項1〜6のいずれか一項に記載の波長変換型の発光ダイオードパッケージ。
- 前記高屈折率の粒子はGaP、Si、TiO2、SrTiO3、SiC、キュービックまたは非晶質カーボン、カーボンナノチューブ、AlGaInP、AlGaAs、SiN、SiON、ITO、SiGe、AlN及びGaNから構成された群から選択されることを特徴とする請求項7に記載の波長変換型の発光ダイオードパッケージ。
- 前記高屈折率層は高屈折率粒子で形成された層で、前記高屈折率層の凸凹パターンは前記高屈折率層の上部に配列された高屈折率粒子の自体形状により成ることを特徴とする請求項1〜6のいずれか一項に記載の波長変換型の発光ダイオードパッケージ。
- 前記高屈折率の粒子はGaP、Si、TiO2、SrTiO3、SiC、キュービックまたは非晶質カーボン、カーボンナノチューブ、AlGaInP、AlGaAs、SiN、SiON、ITO、SiGe、AlN及びGaNから構成された群から選択されることを特徴とする請求項9に記載の波長変換型の発光ダイオードパッケージ。
- 前記パッケージ基板はリードフレームが形成された下部パッケージ基板と、内部側壁が上部に向かって傾いたキャビティを有する上部パッケージ基板を含み、前記キャビティは発光ダイオードの実装領域に提供されることを特徴とする請求項1〜10のいずれか一項に記載の波長変換型の発光ダイオードパッケージ。
- 前記高屈折率層は、前記低屈折率領域と界面を成す下面が、前記発光ダイオードから生成される光の波長で無反射性を有する無反射(AR)層であることを特徴とする請求項1〜11のいずれか一項に記載の波長変換型の発光ダイオードパッケージ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050063532A KR100665219B1 (ko) | 2005-07-14 | 2005-07-14 | 파장변환형 발광다이오드 패키지 |
Publications (2)
Publication Number | Publication Date |
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JP2007027751A JP2007027751A (ja) | 2007-02-01 |
JP4406416B2 true JP4406416B2 (ja) | 2010-01-27 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006194478A Expired - Fee Related JP4406416B2 (ja) | 2005-07-14 | 2006-07-14 | 波長変換型の発光ダイオードパッケージ |
Country Status (3)
Country | Link |
---|---|
US (1) | US20070012940A1 (ja) |
JP (1) | JP4406416B2 (ja) |
KR (1) | KR100665219B1 (ja) |
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