JP4386185B2 - Nitride semiconductor device - Google Patents

Nitride semiconductor device Download PDF

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JP4386185B2
JP4386185B2 JP2004220822A JP2004220822A JP4386185B2 JP 4386185 B2 JP4386185 B2 JP 4386185B2 JP 2004220822 A JP2004220822 A JP 2004220822A JP 2004220822 A JP2004220822 A JP 2004220822A JP 4386185 B2 JP4386185 B2 JP 4386185B2
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electrode
light
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nitride semiconductor
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JP2006041284A (en
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秀和 青柳
哲二 松尾
哲次 杢
未来雄 田嶋
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Sanken Electric Co Ltd
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Priority to CNB2005800210193A priority patent/CN100449694C/en
Priority to PCT/JP2005/012900 priority patent/WO2006011362A1/en
Priority to TW094123939A priority patent/TW200608609A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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Description

本発明は半導体発光素子、電子デバイス等の窒化物半導体装置に関する。   The present invention relates to a nitride semiconductor device such as a semiconductor light emitting element and an electronic device.

窒化ガリウム（ＧａＮ）等の窒化物半導体を使用した発光ダイオードの光透過性電極として厚さ２０ｎｍ以下の銀（Ａｇ）電極を設けることが後記特許文献１に開示されている。銀電極は、窒化物半導体に対して比較的良好にオーミック接触する。また、銀電極は抵抗率が比較的大きいｐ型窒化物半導体に対しても比較的良好にオーミック接触する。また、銀電極の厚さを２０ｎｍ以下にすると３５０〜６００ｎｍ程度の波長を有する光を透過させることができるので、銀電極を光透過電極として使用することができる。特に４００ｎｍ以下の波長に対して比較的大きな透過率（例えば６０％以上）を示す。窒化物半導体発光装置においては、光取り出し側電極に対してオーミック性と光透過性との両方が要求されるので、銀電極は光取り出し側電極として好適なものである。また、光を放射しないＦＥＴ等の窒化物半導体装置の電極にはオーミック性のみが要求されるが、銀電極はこの要求に応えることができる。   Japanese Patent Application Laid-Open Publication No. 2003-228688 discloses that a silver (Ag) electrode having a thickness of 20 nm or less is provided as a light-transmitting electrode of a light-emitting diode using a nitride semiconductor such as gallium nitride (GaN). The silver electrode has a relatively good ohmic contact with the nitride semiconductor. In addition, the silver electrode has a relatively good ohmic contact with a p-type nitride semiconductor having a relatively high resistivity. Moreover, since the light which has a wavelength of about 350-600 nm can be permeate | transmitted when the thickness of a silver electrode shall be 20 nm or less, a silver electrode can be used as a light transmissive electrode. In particular, it exhibits a relatively large transmittance (for example, 60% or more) for wavelengths of 400 nm or less. In the nitride semiconductor light emitting device, since both the ohmic property and the light transmitting property are required for the light extraction side electrode, the silver electrode is suitable as the light extraction side electrode. Further, only the ohmic property is required for the electrode of a nitride semiconductor device such as an FET that does not emit light, but the silver electrode can meet this requirement.

ところで、銀電極は１０〜１００℃程度の比較的低い温度において化学的に不安定であって、酸化及び硫化し易い。また、銀電極を蒸着で形成する時に銀が島状に凝集することがある。銀電極が酸化又は硫化すると、窒化物半導体と銀電極との接触抵抗が増加し、半導体装置の電気的特性が低下する。
特開平１１−１８６５９９号公報 By the way, the silver electrode is chemically unstable at a relatively low temperature of about 10 to 100 ° C., and is easily oxidized and sulfided. Further, silver may be aggregated in an island shape when the silver electrode is formed by vapor deposition. When the silver electrode is oxidized or sulfided, the contact resistance between the nitride semiconductor and the silver electrode increases, and the electrical characteristics of the semiconductor device deteriorate.
Japanese Patent Laid-Open No. 11-186599

従って、本発明が解決しようとする課題は、窒化物半導体装置の電極を容易に安定性良く形成できない点である。   Therefore, the problem to be solved by the present invention is that the electrode of the nitride semiconductor device cannot be easily formed with good stability.

上記課題を解決するための本発明は、窒化物半導体領域と、該窒化物半導体領域の主面に形成された電極とを有し、前記電極が、Ａｇと、Ｃｕ、Ｐｄ、Ｎｄ、Ｓｉ、Ｉｒ、Ｚｎ、Ｔｉ、Ｍｇ、Ｙ及びＳｎから選択された複数の添加元素との合金から成り、
前記Ａｇに対する前記添加元素の割合は、０．５〜１０重量％であることを特徴とする窒化物半導体装置に係わるものである。
The present invention for solving the above-described problems has a nitride semiconductor region and an electrode formed on the main surface of the nitride semiconductor region, and the electrode comprises Ag , Cu 2 , Pd, Nd, Si, Ir, Ri Zn, Ti, Mg, an alloy of a plurality of additive elements selected from Y及 beauty Sn formed,
The ratio of the additive element to the Ag is 0.5 to 10% by weight, which relates to a nitride semiconductor device.

なお、請求項２に示すように、前記窒化物半導体領域は半導体発光素子を形成するための複数の半導体層を含み、前記電極は前記複数の半導体層の内の光取り出し面側の半導体層に形成され、且つ光を透過させることができる厚さに形成されていることが望ましい。 According to a second aspect of the present invention, the nitride semiconductor region includes a plurality of semiconductor layers for forming a semiconductor light emitting element, and the electrode is formed on the semiconductor layer on the light extraction surface side of the plurality of semiconductor layers. It is desirable that it is formed and has a thickness capable of transmitting light.

本発明によれば、添加元素の作用によって銀の酸化又は硫化又はこれ等の両方を防止することができ、窒化物半導体に対する接触抵抗の小さい電極を容易に形成することができる。   According to the present invention, it is possible to prevent silver oxidation and / or sulfidation or both by the action of the additive element, and it is possible to easily form an electrode having a low contact resistance to the nitride semiconductor.

次に、図１〜図３を参照して本発明の実施形態に係わる半導体発光装置を説明する。   Next, a semiconductor light emitting device according to an embodiment of the present invention will be described with reference to FIGS.

図１に示す本発明の実施例１に従う半導体発光装置は、導電性を有するシリコン基板１と、バッファ層２と、発光機能を有している主半導体領域３と、第１の電極としてのアノード電極４と、第２の電極としてのカソード電極５とから成る。主半導体領域３はダブルヘテロ接合構造の発光ダイオードを構成するために、一般にｎ型クラッド層と呼ばれているｎ型半導体層６と、活性層７と、一般にｐ型クラッド層と呼ばれているｐ型半導体層８とを有している。なお、バッファ層２も主半導体領域３の一部と考えることもできる。主半導体領域３の詳細は後述する。   The semiconductor light emitting device according to the first embodiment of the present invention shown in FIG. 1 includes a conductive silicon substrate 1, a buffer layer 2, a main semiconductor region 3 having a light emitting function, and an anode as a first electrode. It consists of an electrode 4 and a cathode electrode 5 as a second electrode. The main semiconductor region 3 is called an n-type semiconductor layer 6 generally called an n-type cladding layer, an active layer 7 and generally called a p-type cladding layer in order to constitute a light emitting diode having a double heterojunction structure. p-type semiconductor layer 8. The buffer layer 2 can also be considered as a part of the main semiconductor region 3. Details of the main semiconductor region 3 will be described later.

シリコン基板１は、例えば、５×１０18ｃｍ-3〜５×１０19ｃｍ-3の例えばn型不純物濃度を有し、且つ０．０００１〜０．０１Ω・ｃｍの抵抗率を有し、アノードの電極４とカソード電極５との間の電流通路として機能する。このシリコン基板１は、バッファ層２、主半導体領域３を機械的に支持するために好ましくは３００〜１０００μｍの厚みを有する。 The silicon substrate 1 has, for example, an n-type impurity concentration of 5 × 10 18 cm −3 to 5 × 10 19 cm −3 and a resistivity of 0.0001 to 0.01 Ω · cm, and an anode It functions as a current path between the electrode 4 and the cathode electrode 5. The silicon substrate 1 preferably has a thickness of 300 to 1000 μm in order to mechanically support the buffer layer 2 and the main semiconductor region 3.

シリコン基板１の一方の主面上に周知の気相成長方法によって形成されたn型バッファ層２は例えばAｌNとGaNとの多層積層構造を有する。   The n-type buffer layer 2 formed on one main surface of the silicon substrate 1 by a well-known vapor phase growth method has, for example, a multilayer stacked structure of AlN and GaN.

ダブルヘテロ接合構造の発光ダイオードを構成する主半導体領域３はバッハァ層２の上に周知の気相成長法によって形成されている。バッハァ層２の直ぐ上に形成されたｎ型半導体層６は、例えば
化学式 ＡｌxＩｎyＧａ1-x-yＮ、
ここでｘ及びｙは０≦ｘ＜１、
０≦ｙ＜１、を満足する数値、
で示される窒化物半導体にｎ型不純物をドーピングしたものであることが望ましく、ｎ型ＧａＮであることがより望ましい。 The main semiconductor region 3 constituting the light emitting diode having a double heterojunction structure is formed on the buffer layer 2 by a known vapor phase growth method. The n-type semiconductor layer 6 formed immediately above the buffer layer 2 has, for example, the chemical formula Al x In y Ga 1-xy N,
Where x and y are 0 ≦ x <1,
A numerical value satisfying 0 ≦ y <1,
It is desirable that the nitride semiconductor represented by the above is doped with an n-type impurity, more preferably n-type GaN.

ｎ型半導体層６の上の活性層７は、例えば
化学式 ＡｌxＩｎyＧａ1-x-yＮ、
ここでｘ及びｙは０≦ｘ＜１、
０≦ｙ＜１、を満足する数値、
で示される不純物非ドープの窒化物半導体であることが望ましく、ＩｎＧａＮであることがより望ましい。なお、図１では活性層７が１つの層で概略的に示されているが、実際には周知の多重量子井戸構造を有している。勿論、活性層７を１つの層で構成することもできる。また、活性層７を省いてｎ型半導体層６をｐ型半導体層８に直接に接触させる構成にすることもできる。また、この実施例では活性層５２に導電型決定不純物がドーピングされていないが、ｐ型又はｎ型不純物をドーピングすることができる。 The active layer 7 on the n-type semiconductor layer 6 has, for example, the chemical formula Al x In y Ga 1-xy N,
Where x and y are 0 ≦ x <1,
A numerical value satisfying 0 ≦ y <1,
It is desirable to be an impurity-undoped nitride semiconductor represented by the above, and it is more desirable to be InGaN. In FIG. 1, the active layer 7 is schematically shown as one layer, but actually has a well-known multiple quantum well structure. Of course, the active layer 7 can also be constituted by one layer. Alternatively, the active layer 7 may be omitted and the n-type semiconductor layer 6 may be in direct contact with the p-type semiconductor layer 8. In this embodiment, the active layer 52 is not doped with a conductivity determining impurity, but can be doped with a p-type or n-type impurity.

活性層７の上に配置されたｐ型半導体層８は、例えば、
化学式 ＡｌxＩｎyＧａ1-x-yＮ、
ここでｘ及びｙは０≦ｘ＜１、
０≦ｙ＜１、を満足する数値、
で示される窒化物半導体にｐ型不純物をドーピングしたものであることが望ましく、ｐ型ＧａＮであることがより望ましい。 The p-type semiconductor layer 8 arranged on the active layer 7 is, for example,
Chemical formula Al x In y Ga 1-xy N,
Where x and y are 0 ≦ x <1,
A numerical value satisfying 0 ≦ y <1,
It is desirable that the nitride semiconductor represented by p is doped with a p-type impurity, more preferably p-type GaN.

アノード電極４は光透過性電極１０とパッド電極１１とから成る。光透過性電極１０は、発光機能を有する主半導体領域３の主面即ち窒化物半導体から成るｐ型半導体層８の主面１２の実質的に全部を覆っており、ｐ型半導体層８にオーミック接触している。光透過性電極１０は活性層７から放射した光を透過させる機能とｐ型半導体層８に対してオーミック接触する機能を有する。ｐ型半導体層８の主面１２の全部又は大部分に光透過性電極１０が設けられているので、平面的に見てパッド電極１１よりも外周側の主半導体領域３に電流を流すことができる。   The anode electrode 4 includes a light transmissive electrode 10 and a pad electrode 11. The light transmissive electrode 10 covers substantially the entire main surface of the main semiconductor region 3 having a light emitting function, that is, the main surface 12 of the p-type semiconductor layer 8 made of a nitride semiconductor. In contact. The light transmissive electrode 10 has a function of transmitting light emitted from the active layer 7 and a function of making ohmic contact with the p-type semiconductor layer 8. Since the light transmissive electrode 10 is provided on all or most of the main surface 12 of the p-type semiconductor layer 8, a current can be passed through the main semiconductor region 3 on the outer peripheral side of the pad electrode 11 in plan view. it can.

光透過性とオーミック性との両方を得るために光透過性電極１０は銀（Ａｇ）を主成分とする合金即ちＡｇ合金によって形成され且つ４００〜６００ｎｍの波長の光を透過させることが可能な１〜２０ｎｍの厚さを有する。光透過性電極１０を形成するためのＡｇ合金は、
Ａｇ ９０〜９９．５重量％
添加元素 ０．５〜１０重量％
から成ることが望ましい。 In order to obtain both light transmittance and ohmic property, the light transmissive electrode 10 is formed of an alloy containing silver (Ag) as a main component, that is, an Ag alloy, and can transmit light having a wavelength of 400 to 600 nm. It has a thickness of 1-20 nm. The Ag alloy for forming the light transmissive electrode 10 is:
Ag 90-99.5% by weight
Additive element 0.5 to 10% by weight
It is desirable to consist of.

前記添加元素はＡｇ又はＡｇ合金の酸化又は硫化又はこれらの両方の抑制機能を有するものであって、Ｃｕ（銅）、Ａｕ（金）、Ｐｄ（パラジウム）、Ｎｄ（ネオジウム）、Ｓｉ（シリコン）、Ｉｒ（イリジウム）、Ｎｉ（ニッケル）、Ｗ（タングステン）、Ｚｎ（亜鉛）、Ｇａ（ガリウム）、Ｔｉ（チタン）、Ｍｇ（マグネシウム）、Ｙ（イットリウム）、Ｉｎ（インジウム）、及びＳｎ（スズ）から選択された１つ又は複数であることが望ましい。
酸化と硫化との両方を抑制するために前記添加元素としてＡｕ（金）が使用される。
酸化を抑制するためにＣｕ（銅）、Ａｕ（金）、Ｐｄ（パラジウム）、Ｉｒ（イリジウム）及びＮｉ（ニッケル）から選択された１つ又は複数の第１の添加元素が使用される。
硫化を抑制するためにＡｕ（金）、Ｎｄ（ネオジウム）、Ｓｉ（シリコン）、Ｗ（タングステン）、Ｚｎ（亜鉛）、Ｇａ（ガリウム）、Ｔｉ（チタン）、Ｍｇ（マグネシウム）、Ｙ（イットリウム）、Ｉｎ（インジウム）及びＳｎ（スズ）から選択された１つ又は複数の第２の添加元素が使用される。
酸化と硫化との両方を抑制するために上記第１の添加元素と第２の添加元素両方が使用される
もし、Ａｇ又はＡｇ合金から成る光透過性電極１０の酸化又は硫化又はこれ等の両方が生じると、光透過性電極１０と主半導体領域３との間のオーミック接触が悪くなり、アノード電極４とカソード電極５との間の順方向電圧降下が大きくなる。
上記添加元素の内のＩｎ（インジウム）、Ｓｎ（スズ）、Ｔｉ（チタン）、Ｐｄ（パラジウム）及びＮｉ（ニッケル）から選択された１つ又は複数を使用すると、光透過性電極１０と主半導体領域３及びパッド電極１１との間の密着性が改善される。従って、密着性の改善が要求される時には、酸化又は硫化の抑制のための元素の他に上記の密着性の改善効果を有する元素をAｇに対して添加する。 The additive element has a function of suppressing oxidation or sulfidation of Ag or an Ag alloy, or both, and includes Cu (copper), Au (gold), Pd (palladium), Nd (neodymium), and Si (silicon). Ir (iridium), Ni (nickel), W (tungsten), Zn (zinc), Ga (gallium), Ti (titanium), Mg (magnesium), Y (yttrium), In (indium), and Sn (tin) It is desirable that one or more selected from the above.
In order to suppress both oxidation and sulfurization, Au (gold) is used as the additive element.
In order to suppress oxidation, one or more first additive elements selected from Cu (copper), Au (gold), Pd (palladium), Ir (iridium) and Ni (nickel) are used.
Au (gold), Nd (neodymium), Si (silicon), W (tungsten), Zn (zinc), Ga (gallium), Ti (titanium), Mg (magnesium), Y (yttrium) to suppress sulfidation One or more second additive elements selected from In (indium) and Sn (tin) are used.
In order to suppress both oxidation and sulfidation, both the first additive element and the second additive element are used. If the light transmissive electrode 10 made of Ag or an Ag alloy is oxidized, sulfided, or both, When this occurs, ohmic contact between the light transmissive electrode 10 and the main semiconductor region 3 is deteriorated, and a forward voltage drop between the anode electrode 4 and the cathode electrode 5 is increased.
When one or more selected from In (indium), Sn (tin), Ti (titanium), Pd (palladium) and Ni (nickel) are used, the light transmissive electrode 10 and the main semiconductor are used. The adhesion between the region 3 and the pad electrode 11 is improved. Therefore, when improvement in adhesion is required, in addition to the element for suppressing oxidation or sulfidation, an element having the above adhesion improvement effect is added to Ag.

Ａｇ合金おけるＡｇに対する添加元素の割合が増大すると、酸化又は硫化の抑制効果、及び銀の蒸着時に生じる虞のある銀の島状凝集の抑制効果が増大する。しかし、添加元素の割合が増大すると、光透過性電極１０と主半導体領域３との間の接触抵抗が増大する。従って、本発明のＡｇ合金を使用した時の光透過性電極１０と主半導体領域３との間の接触抵抗が、従来の光透過性電極としてＡｇのみを使用する時に生じる酸化又は硫化を伴った光透過性電極と主半導体領域との間の接触抵抗と同一又はこれよりも小さくなるように添加元素の割合を決定することが望ましい。また、本発明のＡｇ合金を使用して光透過性電極１０を形成することによるコストの低減が、従来の光透過性電極としてＡｇのみを使用する場合において、銀の不安定性を解消するための特別の工程を設けることによるコスト増大よりも大きくなるように添加元素の割合を決定することが望ましい。添加元素の割合は前記接触抵抗と前記コストとの両方を考慮して決定するのが望ましいが、前記接触抵抗と前記コストとのいずれか一方のみを考慮して決定することもできる。   When the ratio of the additive element to Ag in the Ag alloy increases, the effect of suppressing oxidation or sulfidation and the effect of suppressing silver island aggregation that may occur during the deposition of silver increase. However, when the proportion of the additive element increases, the contact resistance between the light transmissive electrode 10 and the main semiconductor region 3 increases. Therefore, the contact resistance between the light transmissive electrode 10 and the main semiconductor region 3 when using the Ag alloy of the present invention is accompanied by oxidation or sulfuration that occurs when only Ag is used as a conventional light transmissive electrode. It is desirable to determine the ratio of the additive element so as to be the same as or smaller than the contact resistance between the light transmissive electrode and the main semiconductor region. Moreover, the cost reduction by forming the light transmissive electrode 10 using the Ag alloy of the present invention is to eliminate the instability of silver when only Ag is used as a conventional light transmissive electrode. It is desirable to determine the ratio of the additive element so as to be larger than the cost increase due to the provision of a special process. The ratio of the additive element is preferably determined in consideration of both the contact resistance and the cost, but may be determined in consideration of only one of the contact resistance and the cost.

前記接触抵抗と前記コストとのいずれか一方又は両方を考慮してAgに対する添加元素の割合を０．５〜１０重量％にすることが望ましい。添加元素の割合が０．５重量％よりも少なくなると、所望の酸化又は硫化の抑制効果を得ることが困難になり、１０重量％よりも大きくなると所望値以下の接触抵抗を得ることが困難になる。添加元素のより好ましい割合は１．５〜５重量％であり、最も好ましい割合は３．５〜４．５重量％である。 In consideration of one or both of the contact resistance and the cost, the ratio of the additive element to Ag is preferably 0.5 to 10% by weight. When the ratio of the additive element is less than 0.5% by weight, it is difficult to obtain a desired effect of suppressing oxidation or sulfidation. Become. A more preferable ratio of the additive element is 1.5 to 5% by weight, and a most preferable ratio is 3.5 to 4.5% by weight.

光透過性電極１０としてAuを４重量％含むAg合金をｐ型半導体層８の上に周知の方法で蒸着し、パッド電極１１を形成した後に５００℃の熱処理を施して図１に示す半導体発光装置を完成させ、この半導体発光装置に３０ｍAの順方向電流を流した時のアノード電極４とカソード電極５との間の順方向電圧を測定したところ、３．５Vであつた。
また、Cuを２重量％、Znを２重量％含むAg合金を使用して上記のAuを含むAg合金の場合と同様に光透過性電極１０を形成し、同様に順方向電圧を測定したところ、３．６Vであつた。
また、Cuを４重量％含むAg合金を使用して上記のAuを含むAg合金の場合と同様に光透過性電極１０を形成し、同様に順方向電圧を測定したところ、３．５５Vであつた。
また、Znを４重量％含むAg合金を使用して上記のAuを含むAg合金の場合と同様に光透過性電極１０を形成し、同様に順方向電圧を測定したところ、３．６５Vであつた。
比較のためにAgのみで光透過性電極を上記のAuを含むAg合金の場合と同様に形成し、順方向電圧を測定したところ、３．７Vであつた。
また、比較のためにAg層の上にTiO2層を設けた光透過性電極を上記のAuを含むAg合金の場合と同様に形成し、順方向電圧を測定したところ、３．８Vであつた。 An Ag alloy containing 4% by weight of Au as a light transmissive electrode 10 is deposited on the p-type semiconductor layer 8 by a well-known method to form a pad electrode 11 and then subjected to a heat treatment at 500 ° C. to perform semiconductor light emission shown in FIG. The device was completed, and the forward voltage between the anode electrode 4 and the cathode electrode 5 when a forward current of 30 mA was passed through the semiconductor light emitting device was measured and found to be 3.5V.
Moreover, when the light-transmitting electrode 10 was formed in the same manner as in the case of the Ag alloy containing Au using an Ag alloy containing 2% by weight of Cu and 2% by weight of Zn, the forward voltage was measured in the same manner. 3.6V.
Further, when a light transmissive electrode 10 was formed using an Ag alloy containing 4% by weight of Cu as in the case of the above Ag alloy containing Au, and the forward voltage was measured in the same manner, it was 3.55V. It was.
Further, when a light transmissive electrode 10 was formed using an Ag alloy containing 4% by weight of Zn as in the case of the Ag alloy containing Au, and the forward voltage was measured in the same manner, it was 3.65V. It was.
For comparison, a light transmissive electrode was formed using only Ag, as in the case of the above Ag alloy containing Au, and the forward voltage was measured.
For comparison, a light transmissive electrode provided with a TiO 2 layer on an Ag layer was formed in the same manner as in the case of the Ag alloy containing Au, and the forward voltage was measured to be 3.8 V. It was.

アノード電極４におけるパッド電極１１は、図示されていないワイヤ等の接続部材をボンディングする部分であって、光透過性電極１０の上に形成されたTi（チタン）層１１ａとこのTi（チタン）層１１ａの上に形成されたＡｕ（金）層１１ｂとから成る。パッド電極１１は光非透過であるので、光透過性電極１０からの光の取り出しを妨害しないように例えば平面形状四角形の光透過性電極１０の中央の一部分のみに配置されている。光透過性電極１０はパッド電極１１に電気的に接続されているので、主半導体領域３のパッド電極１１に対向する部分の外周側にも電流を流すために機能する。   The pad electrode 11 in the anode electrode 4 is a part for bonding a connection member such as a wire (not shown), and a Ti (titanium) layer 11 a formed on the light-transmissive electrode 10 and the Ti (titanium) layer. And an Au (gold) layer 11b formed on 11a. Since the pad electrode 11 is non-transmissive to light, the pad electrode 11 is disposed only at a part of the center of the light-transmissive electrode 10 having a square shape, for example, so as not to interfere with light extraction from the light-transmissive electrode 10. Since the light transmissive electrode 10 is electrically connected to the pad electrode 11, the light transmissive electrode 10 functions to flow current to the outer peripheral side of the portion of the main semiconductor region 3 facing the pad electrode 11.

カソード電極５はシリコン基板１の下面１３に設けられており、シリコン基板１にオーミック接触している。なお、カソード電極５をシリコン基板１又はバッファ層２又はn型半導体層６の上面に設けることもできる。   The cathode electrode 5 is provided on the lower surface 13 of the silicon substrate 1 and is in ohmic contact with the silicon substrate 1. The cathode electrode 5 can also be provided on the upper surface of the silicon substrate 1, the buffer layer 2, or the n-type semiconductor layer 6.

アノード電極４とカソード電極５との間に順方向電圧を印加すると、活性層７から光が光透過性電極１０側とカソード電極５側との両方向に放射される。活性層７から光透過性電極１０側に放射された光はパッド電極１１で覆われていない部分から外部に取り出される。活性層７からカソード電極５側に放射された光はカソード電極５で反射されて光透過性電極１０側に戻り、外部に取り出される。   When a forward voltage is applied between the anode electrode 4 and the cathode electrode 5, light is emitted from the active layer 7 in both directions of the light transmissive electrode 10 side and the cathode electrode 5 side. The light emitted from the active layer 7 to the light transmissive electrode 10 side is extracted to the outside from the portion not covered with the pad electrode 11. The light emitted from the active layer 7 to the cathode electrode 5 side is reflected by the cathode electrode 5, returns to the light transmissive electrode 10 side, and is extracted outside.

本実施例によれば、添加元素の作用によって銀の酸化又は硫化又はこれ等の両方又は蒸着時の銀の凝集を防止することができ、窒化物半導体に対する接触抵抗の小さい電極を容易に形成することができる。また、光透過性とオーミック性との両方が良好な光透過性電極１０を提供できる。   According to the present embodiment, the action of the additive element can prevent silver from being oxidized or sulfided, or both, or aggregation of silver during vapor deposition, and easily form an electrode having a low contact resistance with respect to the nitride semiconductor. be able to. Further, it is possible to provide the light transmissive electrode 10 having both good light transmittance and ohmic property.

次に、図２を参照して本発明の実施例２に係る半導体発光素子を説明する。但し、図２及び後述の図３において、図１と実質的に同一の部分には同一の符号を付してその説明を省略する。 Next, a semiconductor light-emitting device according to Example 2 of the present invention will be described with reference to FIG. However, in FIG. 2 and FIG. 3 to be described later, substantially the same parts as those in FIG.

図２の実施例２に係る半導体発光素子は図１のバッフア層２を省き、ｎ型半導体層６とシリコン基板１との間に光反射層２０を設け、この他は図１と実質的に同一に形成したものである。光反射層２０は実施例１の光透過性電極１０と同一のAg合金で形成することが望ましい。しかし、光反射層２０をAg又は別な金属又は半導体多層構造の光反射層に置き換えることができる。ここでの光反射層２０は図２で鎖線で区画して示す主半導体領域３側のAg合金からなる第１の貼合せ層２０ａと基板１側のAg合金からなる第２の貼合せ層鎖線２０ｂとを例えば２５０〜４００℃の熱処理を伴って熱圧着することによって形成されている。この熱圧着時においてＡｇ又はＡｇ合金材料を相互に拡散するので、この熱圧着による接合を拡散接合と呼ぶことができる。 The semiconductor light emitting device according to Example 2 in FIG. 2 omits the buffer layer 2 in FIG. 1 and provides a light reflection layer 20 between the n-type semiconductor layer 6 and the silicon substrate 1, and the others are substantially the same as in FIG. They are formed identically. The light reflecting layer 20 is desirably formed of the same Ag alloy as the light transmissive electrode 10 of the first embodiment. However, the light reflecting layer 20 can be replaced with Ag or another metal or semiconductor multilayer light reflecting layer. Here, the light reflecting layer 20 is divided by a chain line in FIG. 2 to show a first bonding layer 20a made of an Ag alloy on the main semiconductor region 3 side and a second bonding layer chain line made of an Ag alloy on the substrate 1 side. It is formed by thermocompression bonding with 20b, for example, with a heat treatment of 250 to 400 ° C. Since Ag or an Ag alloy material diffuses to each other at the time of the thermocompression bonding, this thermocompression bonding can be called diffusion bonding.

光反射層２０は、ここでの光の透過を阻止するために５０ｎｍ以上の厚さを有することが望ましい。また、基板１に対する主半導体領域３の貼付け機能を良好に得るために光反射層２の厚みを８０ｎｍ以上にすることが望ましい。しかし、光反射層２の厚さが１５００ｎｍを越えると光反射層２０にクラックが発生する。従って、光反射層２０の好ましい厚みは５０〜１５００ｎｍ、より好ましい厚みは８０〜１０００ｎｍである。 The light reflecting layer 20 desirably has a thickness of 50 nm or more in order to prevent the light transmission here. Further, in order to obtain a good function of attaching the main semiconductor region 3 to the substrate 1, it is desirable that the thickness of the light reflecting layer 2 is 80 nm or more. However, when the thickness of the light reflecting layer 2 exceeds 1500 nm, a crack occurs in the light reflecting layer 20. Therefore, the preferable thickness of the light reflection layer 20 is 50 to 1500 nm, and the more preferable thickness is 80 to 1000 nm.

活性層７から光反射層２０側に放射された光は光反射層２０で主半導体領域３の主面１２側に反射されて外部に取り出される。 The light emitted from the active layer 7 to the light reflecting layer 20 side is reflected by the light reflecting layer 20 to the main surface 12 side of the main semiconductor region 3 and extracted outside.

図２の実施例２に係る半導体発光素子は実施例１と同様に光透過性電極１０を有するので、実施例１と同一の効果を有する他に、光反射層２０による光の取り出し効率の増大効果を有する。
また、光反射層２０が主半導体領域３及びシリコン基板１に良好にオーミック接触するので、特開２００２−２１７４５０号公報に示されているように光反射層と主半導体領域との間にコンタクト用合金層を分散配置することが不要になり、光反射層２０を主半導体領域３及びシリコン基板１の主面の実質的に全体に接触させることができる。従って、本実施例の半導体発光素子は、前記特開２００２−２１７４５０号のものよりも大きい光反射量を有し、且つ小さい順方向電圧を有する。また、前記特開２００２−２１７４５０号のものではオーミックコンタクト合金層と反射層との両方を設けることが要求されたが、本実施例では光反射層２０を設けるのみで反射層とオーミック接触との両方を得ることができ、製造工程が簡略化される。また、光透過性電極１０と光反射層２０とを同一のＡｇ合金で形成することにより、製造コストの低減を図ることができる。 Since the semiconductor light emitting device according to Example 2 in FIG. 2 includes the light transmissive electrode 10 as in Example 1, in addition to having the same effect as in Example 1, the light extraction efficiency by the light reflecting layer 20 is increased. Has an effect.
Further, since the light reflecting layer 20 is in good ohmic contact with the main semiconductor region 3 and the silicon substrate 1, as shown in Japanese Patent Application Laid-Open No. 2002-217450, the light reflecting layer 20 is used for contact between the light reflecting layer and the main semiconductor region. It becomes unnecessary to disperse and arrange the alloy layer, and the light reflecting layer 20 can be brought into contact with the main semiconductor region 3 and substantially the entire main surface of the silicon substrate 1. Therefore, the semiconductor light emitting device of this example has a larger amount of light reflection than that of the aforementioned Japanese Patent Laid-Open No. 2002-217450, and has a smaller forward voltage. In addition, in the above-mentioned Japanese Patent Application Laid-Open No. 2002-217450, it is required to provide both an ohmic contact alloy layer and a reflective layer. However, in this embodiment, only the light reflective layer 20 is provided and the reflective layer and the ohmic contact are provided. Both can be obtained and the manufacturing process is simplified. Moreover, the manufacturing cost can be reduced by forming the light transmissive electrode 10 and the light reflecting layer 20 with the same Ag alloy.

図３に示す実施例３の半導体発光素子は、図１に電流ブロック層２１と保護膜２２とを追加し、この他は図１と同一に構成したものである。この電流ブロック層２１はパッド電極１１の直下において光透過性電極１１と主半導体領域３の一方の主面１２との間に配置されている。もし、電流ブロック層２１が設けられていない場合には、活性層７のパッド電極１１に対向する部分に電流が流れ、ここから光が放射されても、この光は光非透過性のパッド電極１１によって遮られる。従って、活性層７のパッド電極１１に対向する部分に流れる電流は光取り出しに寄与しない電流である。このため、活性層７のパッド電極１１に対向する部分の電流を抑制することが発光効率の向上に重要である。図３の電流ブロック層２１はシリコン酸化物等の絶縁膜から成り且つ主半導体領域３の一方の主面１２のパッド電極１１の対向領域に配置されているので、上述の発光に寄与しない電流を抑制し、主半導体領域３の外周側部分の電流を増大させて発光効率を高めるために寄与する。電流ブロック層２１は平面的に見て、即ち主半導体領域３の一方の主面１２に対して垂直な方向から見て、パッド電極１１の内側の少なくとも一部を含むパターンに形成される。   The semiconductor light emitting device of Example 3 shown in FIG. 3 has the same configuration as FIG. 1 except that a current blocking layer 21 and a protective film 22 are added to FIG. The current blocking layer 21 is disposed between the light transmissive electrode 11 and one main surface 12 of the main semiconductor region 3 immediately below the pad electrode 11. If the current blocking layer 21 is not provided, a current flows through a portion of the active layer 7 facing the pad electrode 11, and even if light is radiated therefrom, this light does not transmit light. 11 is obstructed. Therefore, the current flowing through the portion of the active layer 7 facing the pad electrode 11 is a current that does not contribute to light extraction. For this reason, it is important to improve the light emission efficiency to suppress the current in the portion of the active layer 7 facing the pad electrode 11. The current blocking layer 21 in FIG. 3 is made of an insulating film such as silicon oxide and is disposed in a region opposite to the pad electrode 11 on one main surface 12 of the main semiconductor region 3. This contributes to suppressing and increasing the current in the outer peripheral portion of the main semiconductor region 3 to increase the light emission efficiency. The current blocking layer 21 is formed in a pattern including at least a part of the inside of the pad electrode 11 when viewed in plan, that is, when viewed from a direction perpendicular to the one main surface 12 of the main semiconductor region 3.

図３の保護膜２２は、絶縁膜から成り、主半導体領域３及びバッファ層２の側面を覆っている。この保護膜２２は電流ブロック層２１と同一の絶縁物で形成することができる。  The protective film 22 in FIG. 3 is made of an insulating film and covers the side surfaces of the main semiconductor region 3 and the buffer layer 2. This protective film 22 can be formed of the same insulator as the current blocking layer 21.

実施例３の半導体発光素子は、実施例１と同一の効果を有する他に、電流ブロック層２１と保護膜２２の効果も有する。   The semiconductor light emitting device of Example 3 has the same effect as that of Example 1, and also has the effects of the current blocking layer 21 and the protective film 22.

図３の電流ブロック層２１及び保護膜２２を図２の半導体発光素子に設けることもできる。   The current blocking layer 21 and the protective film 22 shown in FIG. 3 may be provided in the semiconductor light emitting device shown in FIG.

本発明は上述の実施例に限定されるものでなく、例えば次の変形が可能なものである。
（１）トランジスタ、FET, 高電子移動度トランジスタ即ちHEMT（High Electron Mobility Transistor）半導体レーザ、フォトディテクタ、太陽電池等の別の窒化物半導体装置の電極にも本発明に従うAｇ合金を使用することができる。
（２） 光反射層２０とｎ型半導体層６との間にＡｌＩｎＧａＮ等から成るバッファ層を介在させることができる。
（３） シリコン基板１の代りに導電性を有するＳｉＣ基板、金属基板等の別の導電性基板又はサファイア等の絶縁基板を使用することができる。
（４） 基板１を金属基板とする場合には、これを電極として使用して第２の電極５を省くことができる。
（５） 主半導体領域３の各層の導電型を各実施例と逆にすることができる。
（６） 図２において基板１をＡｇ又はＡｇ合金と拡散接合することができる金属で形成し、基板１側の貼合せ層２０ｂを省くことができる。
（７） 図１及び図３においてシリコン基板１とカソード電極５との間に周知に光反射層を配置することができる。 The present invention is not limited to the above-described embodiments, and for example, the following modifications are possible.
(1) The Ag alloy according to the present invention can also be used for electrodes of other nitride semiconductor devices such as transistors, FETs, high electron mobility transistors (HEMTs), semiconductor lasers, photodetectors, solar cells, etc. .
(2) A buffer layer made of AlInGaN or the like can be interposed between the light reflecting layer 20 and the n-type semiconductor layer 6.
(3) Instead of the silicon substrate 1, a conductive SiC substrate, another conductive substrate such as a metal substrate, or an insulating substrate such as sapphire can be used.
(4) When the substrate 1 is a metal substrate, it can be used as an electrode and the second electrode 5 can be omitted.
(5) The conductivity type of each layer of the main semiconductor region 3 can be reversed from that of each embodiment.
(6) In FIG. 2, the board | substrate 1 can be formed with the metal which can be diffusion-bonded with Ag or an Ag alloy, and the bonding layer 20b by the side of the board | substrate 1 can be omitted.
(7) In FIGS. 1 and 3, a light reflection layer can be well known between the silicon substrate 1 and the cathode electrode 5.

本発明の実施例１に従う半導体発光素子を示す断面図である。It is sectional drawing which shows the semiconductor light-emitting device according to Example 1 of this invention. 本発明の実施例２に従う半導体発光素子を示す断面図である。It is sectional drawing which shows the semiconductor light-emitting device according to Example 2 of this invention. 本発明の実施例３に従う半導体発光素子を示す断面図である。It is sectional drawing which shows the semiconductor light-emitting device according to Example 3 of this invention.

符号の説明Explanation of symbols

１ 基板
３ 主半導体領域
４ アノード電極
５ カソード電極
１０ Ag合金から成る光透過性電極 1 Substrate 3 Main semiconductor region 4 Anode electrode 5 Cathode electrode 10 Light transmissive electrode made of Ag alloy

Claims (2)

窒化物半導体領域と、該窒化物半導体領域の主面に形成された電極とを有し、前記電極が、Ａｇと、Ｃｕ、Ｐｄ、Ｎｄ、Ｓｉ、Ｉｒ、Ｚｎ、Ｔｉ、Ｍｇ、Ｙ及びＳｎから選択された複数の添加元素との合金から成り、
前記Ａｇに対する前記添加元素の割合は、０．５〜１０重量％であることを特徴とする窒化物半導体装置。 And the nitride semiconductor region, and an electrode formed on the main surface of the nitride semiconductor region, the electrodes, and Ag, Cu, Pd, Nd, Si, Ir, Zn, Ti, Mg, Y 及 Beauty Ri formed of an alloy of a plurality of additive elements selected from sn,
A ratio of the additive element to Ag is 0.5 to 10% by weight . 前記窒化物半導体領域は半導体発光素子を形成するための複数の半導体層を含み、前記電極は前記複数の半導体層の内の光取り出し面側の半導体層に形成され、且つ光を透過させることができる厚さに形成されていることを特徴とする請求項1記載の窒化物半導体装置。   The nitride semiconductor region includes a plurality of semiconductor layers for forming a semiconductor light emitting device, and the electrode is formed in a semiconductor layer on the light extraction surface side of the plurality of semiconductor layers and transmits light. 2. The nitride semiconductor device according to claim 1, wherein the nitride semiconductor device is formed to a thickness capable of being formed.
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