JP4331768B2 - 熱処理炉及び縦型熱処理装置 - Google Patents
熱処理炉及び縦型熱処理装置 Download PDFInfo
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- JP4331768B2 JP4331768B2 JP2007049785A JP2007049785A JP4331768B2 JP 4331768 B2 JP4331768 B2 JP 4331768B2 JP 2007049785 A JP2007049785 A JP 2007049785A JP 2007049785 A JP2007049785 A JP 2007049785A JP 4331768 B2 JP4331768 B2 JP 4331768B2
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- insulating material
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- 238000010438 heat treatment Methods 0.000 title claims description 68
- 239000011810 insulating material Substances 0.000 claims description 74
- 238000001816 cooling Methods 0.000 claims description 12
- 238000007664 blowing Methods 0.000 claims description 7
- 230000007246 mechanism Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 17
- 230000008602 contraction Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000012809 cooling fluid Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910000953 kanthal Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012784 inorganic fiber Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B23/00—Heating arrangements
- F26B23/04—Heating arrangements using electric heating
- F26B23/06—Heating arrangements using electric heating resistance heating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Resistance Heating (AREA)
- Furnace Details (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
Description
図1において、1は半導体製造装置の一つである縦型の熱処理装置であり、この熱処理装置1は、被処理体例えば半導体ウエハwを一度に多数枚収容して酸化、拡散、減圧CVD等の熱処理を施すことができる縦型の熱処理炉2を備えている。この熱処理炉2は、ウエハwを収容して熱処理するための処理容器(反応管ともいう)3と、該処理容器3の周囲を覆うように設けられウエハwを加熱する円筒状のヒータ(加熱装置)5とを備えている。
1 縦型熱処理装置
2 熱処理炉
3 処理容器
3a 炉口
16 断熱材
17 棚部
18 ヒータ線(発熱抵抗線)
18a スパイラル部(螺旋部)
20 ピン部材
20a U字部分
20b 脚部
40 強制空冷用空気吹出し孔
Claims (8)
- 被処理体を収容して熱処理するための処理容器と、該処理容器の周囲を覆うように設けられ被処理体を加熱する円筒状のヒータとを備えた熱処理炉において、上記ヒータは、円筒状の断熱材と、該断熱材の内周に軸方向に多段に形成された溝状の棚部と、各棚部に沿って配置された螺旋型の発熱抵抗線とを具備し、上記断熱材には上記発熱抵抗線を適宜間隔でヒータの径方向に移動可能に且つ棚部から脱落しないように保持するピン部材を配設したことを特徴とする熱処理炉。
- 上記ピン部材は、発熱抵抗線の外側ターン部分をU字部分で保持すべく平面U字状に形成され、その両脚部が断熱材を内側から外側に貫通し、断熱材の外面で折り曲げられていることを特徴とする請求項1記載の熱処理炉。
- 上記断熱材の棚部には、該棚部を内外に貫通する強制空冷用空気吹出し孔が形成されていることを特徴とする請求項1記載の熱処理炉。
- 上記発熱抵抗線は、上記棚部の先端部に螺旋部の中心が位置するように配置されていることを特徴とする請求項1記載の熱処理炉。
- 下部が炉口として開放され被処理体を収容して熱処理するための縦長の処理容器の周囲に上記被処理体を加熱する円筒状のヒータを設けてなる熱処理炉と、上記炉口を閉塞する蓋体と、該蓋体上に被処理体を多段に保持する保持具を載置し、該蓋体を昇降させて蓋体の開閉と上記処理容器内への保持具の搬入搬出を行う昇降機構と備えた縦型熱処理装置において、上記ヒータは、円筒状の断熱材と、該断熱材の内周に上下方向に多段に形成された溝状の棚部と、各棚部に沿って配置された螺旋型の発熱抵抗線とを具備し、上記断熱材には上記発熱抵抗線を適宜間隔でヒータの径方向に移動可能に且つ棚部から脱落しないように保持するピン部材を配設したことを特徴とする縦型熱処理装置。
- 上記ピン部材は、発熱抵抗線の外側ターン部分をU字部分で保持すべく平面U字状に形成され、その両脚部が断熱材を内側から外側に貫通し、断熱材の外面で折り曲げられていることを特徴とする請求項5記載の縦型熱処理装置。
- 上記断熱材の棚部には、該棚部を内外に貫通する強制空冷用空気吹出し孔が形成されていることを特徴とする請求項5記載の縦型熱処理装置。
- 上記発熱抵抗線は、上記棚部の先端部に螺旋部の中心が位置するように配置されていることを特徴とする請求項5記載の縦型熱処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007049785A JP4331768B2 (ja) | 2007-02-28 | 2007-02-28 | 熱処理炉及び縦型熱処理装置 |
KR1020080017774A KR101148728B1 (ko) | 2007-02-28 | 2008-02-27 | 열처리로 및 종형 열처리 장치 |
TW097106946A TWI401728B (zh) | 2007-02-28 | 2008-02-27 | Heat treatment furnace and vertical heat treatment device |
US12/071,909 US7974525B2 (en) | 2007-02-28 | 2008-02-27 | Heat processing furnace and vertical-type heat processing apparatus |
CN2008100881776A CN101256946B (zh) | 2007-02-28 | 2008-02-28 | 热处理炉和立式热处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007049785A JP4331768B2 (ja) | 2007-02-28 | 2007-02-28 | 熱処理炉及び縦型熱処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP2008218478A JP2008218478A (ja) | 2008-09-18 |
JP4331768B2 true JP4331768B2 (ja) | 2009-09-16 |
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JP2007049785A Active JP4331768B2 (ja) | 2007-02-28 | 2007-02-28 | 熱処理炉及び縦型熱処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7974525B2 (ja) |
JP (1) | JP4331768B2 (ja) |
KR (1) | KR101148728B1 (ja) |
CN (1) | CN101256946B (ja) |
TW (1) | TWI401728B (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8023806B2 (en) * | 2007-03-20 | 2011-09-20 | Tokyo Electron Limited | Heat processing furnace and vertical-type heat processing apparatus |
JP5544121B2 (ja) | 2009-07-21 | 2014-07-09 | 株式会社日立国際電気 | 加熱装置、基板処理装置、及び半導体装置の製造方法 |
KR101096602B1 (ko) * | 2009-07-21 | 2011-12-20 | 가부시키가이샤 히다치 고쿠사이 덴키 | 가열 장치, 기판 처리 장치 및 반도체 장치의 제조 방법 |
US9064912B2 (en) | 2009-07-21 | 2015-06-23 | Hitachi Kokusai Electric, Inc. | Heating device, substrate processing apparatus, and method of manufacturing semiconductor device |
TWM413957U (en) * | 2010-10-27 | 2011-10-11 | Tangteck Equipment Inc | Diffusion furnace apparatus |
US8987641B2 (en) * | 2011-06-20 | 2015-03-24 | Arsalan Emami | High performance heater |
JP5868619B2 (ja) * | 2011-06-21 | 2016-02-24 | ニチアス株式会社 | 熱処理炉及び熱処理装置 |
US10204806B2 (en) * | 2011-09-06 | 2019-02-12 | Arsalan Emami | Modular heater |
US9171746B2 (en) * | 2011-09-06 | 2015-10-27 | Arsalan Emami | Heater elements with enhanced cooling |
US20160081141A1 (en) * | 2012-09-04 | 2016-03-17 | Arsalan Emami | Modular heater and associated parts |
JP2014082014A (ja) * | 2012-10-12 | 2014-05-08 | Tokyo Electron Ltd | ヒータ装置及び熱処理装置 |
CN102984832A (zh) * | 2012-12-06 | 2013-03-20 | 中国科学院国家天文台 | 高精度恒温筒 |
JP2015035481A (ja) * | 2013-08-08 | 2015-02-19 | 東京エレクトロン株式会社 | ヒータ装置、基板処理装置及びメンテナンス方法 |
JP6091377B2 (ja) * | 2013-08-21 | 2017-03-08 | 東京エレクトロン株式会社 | 断熱壁体の製造方法 |
CN103486854B (zh) * | 2013-10-12 | 2015-04-22 | 江苏高皓工业炉有限公司 | 一种可用于局部加热的钟罩炉 |
CN103779258B (zh) * | 2014-02-20 | 2016-06-15 | 北京七星华创电子股份有限公司 | 一种半导体热处理设备的加热装置、维修件及维修方法 |
JP6435541B2 (ja) * | 2014-07-07 | 2018-12-12 | 株式会社Ihi | 熱処理装置 |
WO2017156503A1 (en) | 2016-03-10 | 2017-09-14 | Arsalan Emami | Improved industrial heater |
CN107917589A (zh) * | 2017-11-15 | 2018-04-17 | 无锡伟博汽车科技有限公司 | 一种车辆dpf干燥箱 |
JP7122856B2 (ja) | 2018-05-02 | 2022-08-22 | 東京エレクトロン株式会社 | 熱処理装置 |
JP1731675S (ja) * | 2022-05-30 | 2022-12-08 | ||
JP1731674S (ja) * | 2022-05-30 | 2022-12-08 | ||
JP1731673S (ja) * | 2022-05-30 | 2022-12-08 |
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US2035306A (en) * | 1933-08-30 | 1936-03-24 | Fmc Corp | Electric furnace |
US3786162A (en) * | 1971-09-27 | 1974-01-15 | F Colson | Portable kilns |
US5038019A (en) * | 1990-02-06 | 1991-08-06 | Thermtec, Inc. | High temperature diffusion furnace |
JP3241887B2 (ja) * | 1993-08-11 | 2001-12-25 | 東京エレクトロン株式会社 | 熱処理装置 |
US5536919A (en) * | 1994-11-22 | 1996-07-16 | Taheri; Ramtin | Heating chamber |
SE9603965D0 (sv) * | 1996-10-30 | 1996-10-30 | Kanthal Ab | Electric furnace assembly |
JPH10233277A (ja) | 1997-02-18 | 1998-09-02 | Tokyo Electron Ltd | 熱処理装置 |
JP4355441B2 (ja) | 2000-11-29 | 2009-11-04 | 株式会社日立国際電気 | 熱処理装置及び熱処理方法及び半導体デバイスの製造方法 |
JP3881937B2 (ja) | 2002-07-05 | 2007-02-14 | 株式会社日立国際電気 | 半導体製造装置または加熱装置 |
CN100508127C (zh) * | 2002-09-20 | 2009-07-01 | 东京毅力科创株式会社 | 热处理装置 |
JP3910151B2 (ja) * | 2003-04-01 | 2007-04-25 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
NL1028057C2 (nl) * | 2005-01-18 | 2006-07-19 | Tempress Systems | Inrichting voor het op zijn plaats houden van verhittingsdraden in een horizontale oven. |
JP4820137B2 (ja) * | 2005-09-26 | 2011-11-24 | 株式会社日立国際電気 | 発熱体の保持構造体 |
JP4907937B2 (ja) * | 2005-09-26 | 2012-04-04 | 株式会社日立国際電気 | 断熱壁体、発熱体の保持構造体、加熱装置および基板処理装置 |
US7564007B2 (en) * | 2007-05-14 | 2009-07-21 | Bailey James G | Kiln removable ceramic element holder |
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2007
- 2007-02-28 JP JP2007049785A patent/JP4331768B2/ja active Active
-
2008
- 2008-02-27 TW TW097106946A patent/TWI401728B/zh active
- 2008-02-27 US US12/071,909 patent/US7974525B2/en active Active
- 2008-02-27 KR KR1020080017774A patent/KR101148728B1/ko active IP Right Grant
- 2008-02-28 CN CN2008100881776A patent/CN101256946B/zh active Active
Also Published As
Publication number | Publication date |
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CN101256946A (zh) | 2008-09-03 |
CN101256946B (zh) | 2011-04-20 |
US7974525B2 (en) | 2011-07-05 |
KR101148728B1 (ko) | 2012-05-25 |
US20080205864A1 (en) | 2008-08-28 |
JP2008218478A (ja) | 2008-09-18 |
TWI401728B (zh) | 2013-07-11 |
TW200901267A (en) | 2009-01-01 |
KR20080080031A (ko) | 2008-09-02 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |