JP4318607B2 - 強誘電体キャパシタの製造方法 - Google Patents
強誘電体キャパシタの製造方法 Download PDFInfo
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- JP4318607B2 JP4318607B2 JP2004220156A JP2004220156A JP4318607B2 JP 4318607 B2 JP4318607 B2 JP 4318607B2 JP 2004220156 A JP2004220156 A JP 2004220156A JP 2004220156 A JP2004220156 A JP 2004220156A JP 4318607 B2 JP4318607 B2 JP 4318607B2
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- 239000003990 capacitor Substances 0.000 title claims description 64
- 238000000034 method Methods 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000005530 etching Methods 0.000 claims description 53
- 239000010410 layer Substances 0.000 claims description 50
- 239000011229 interlayer Substances 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- IVUXZQJWTQMSQN-UHFFFAOYSA-N distrontium;oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Sr+2].[Sr+2].[Ta+5].[Ta+5] IVUXZQJWTQMSQN-UHFFFAOYSA-N 0.000 claims description 16
- 238000001039 wet etching Methods 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000001312 dry etching Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- VIUKNDFMFRTONS-UHFFFAOYSA-N distrontium;niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Sr+2].[Sr+2].[Nb+5].[Nb+5] VIUKNDFMFRTONS-UHFFFAOYSA-N 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 230000015654 memory Effects 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229960000583 acetic acid Drugs 0.000 description 7
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000012362 glacial acetic acid Substances 0.000 description 3
- 229910000457 iridium oxide Inorganic materials 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- UUCCCPNEFXQJEL-UHFFFAOYSA-L strontium dihydroxide Chemical compound [OH-].[OH-].[Sr+2] UUCCCPNEFXQJEL-UHFFFAOYSA-L 0.000 description 2
- 229910001866 strontium hydroxide Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- RZEADQZDBXGRSM-UHFFFAOYSA-N bismuth lanthanum Chemical compound [La].[Bi] RZEADQZDBXGRSM-UHFFFAOYSA-N 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
Description
図1〜3を参照して、第1実施形態の強誘電体キャパシタの製造方法について説明する。図1〜3は、第1実施形態の強誘電体キャパシタの製造方法を説明するための概略的断面図である。
一方、酸化ストロンチウムSrOは、以下の化学反応式で示される反応で、水と反応して水酸化ストロンチウムSr(OH)2になる。
水酸化ストロンチウムSr(OH)2は容易に酸に溶解する。
図4及び図5を参照して第2実施形態の強誘電体キャパシタの製造方法について説明する。図4及び5は、第2実施形態の強誘電体キャパシタの製造方法を説明するための概略的断面図である。
図6を参照して第3実施形態の強誘電体キャパシタの製造方法について説明する。図6は、第3実施形態の強誘電体キャパシタの製造方法を説明するための概略的断面図である。
11、511 シリコン基板
12、512 素子分離絶縁膜
13、513 MOSFET
14、514 ドレイン領域
15、515 ソース領域
16、516 ゲート絶縁膜
17、517 ゲート電極
20 第1層間絶縁膜
24、25、26、28、524 導電プラグ
27 ビット線
30、530 キャパシタ形成用積層膜
31、531 メタル層
33、533 第1導電体層
35、535 強誘電体層
37、537 第2導電体層
39 エッチングマスク形成用膜
40、540 積層体
41、541 バリアメタル
43、543 下部電極
45、545 強誘電体膜
47、547 上部電極
49 エッチングマスク
50 シリコン酸化膜
52 シリコン酸化膜マスク
54 キャパシタ被形成領域
56 フォトレジストパターン
60 第2層間絶縁膜
62、63、64、65、66 コンタクトホール
70、72 メタル配線
520 層間絶縁膜
552 ハードマスク
Claims (5)
- 半導体基板を用意する工程と、
該半導体基板上に第1層間絶縁膜を形成する工程と、
該第1層間絶縁膜上にメタル層、第1導電体層、強誘電体層及び第2導電体層を順次に積層してキャパシタ形成用積層膜を形成する工程と、
該キャパシタ形成用積層膜上にタンタル酸ストロンチウム又はニオブ酸ストロンチウムからなるエッチングマスク形成用膜を形成する工程と、
該エッチングマスク形成用膜上に強誘電体キャパシタ被形成領域を覆うシリコン酸化膜マスクを形成する工程と、
該シリコン酸化膜マスクを用いてエッチングマスク形成用膜に対するウェットエッチングを行うことにより、エッチングマスクを形成する工程と、
該エッチングマスクを用いて前記キャパシタ形成用積層膜に対してドライエッチングを行うことにより、バリアメタル、下部電極、強誘電体膜、及び上部電極を備える積層体を形成する工程と
を備えることを特徴とする強誘電体キャパシタの製造方法。 - 前記積層体を形成する工程の後、
前記積層体上にタンタル酸ストロンチウム又はニオブ酸ストロンチウムからなるエッチストップ膜を形成する工程と、
前記第1層間絶縁膜及び前記エッチストップ膜上に第2層間絶縁膜を形成する工程と、
該第2層間絶縁膜の部分であって、前記エッチストップ膜上の部分にコンタクトホールを設ける工程と、
ウェットエッチングにより、前記エッチストップ膜に開口部を設ける工程と
を備えることを特徴とする請求項1に記載の強誘電体キャパシタの製造方法。 - 前記積層体を形成する工程の後、
前記第1層間絶縁膜及び前記エッチングマスク上に第2層間絶縁膜を形成する工程と、
該第2層間絶縁膜の前記エッチングマスク上の部分に、前記エッチングマスクをエッチストップ膜としてコンタクトホールを設ける工程と、
ウェットエッチングにより、前記エッチングマスクに開口部を設ける工程と
を備えることを特徴とする請求項1に記載の強誘電体キャパシタの製造方法。 - 前記ウェットエッチングを硝酸、フッ酸及び酢酸の混合酸で行うこと
を特徴とする請求項1〜3のいずれか一項に記載の強誘電体キャパシタの製造方法。 - 前記ウェットエッチングを硝酸及びフッ酸の混合酸で行うこと
を特徴とする請求項1〜3のいずれか一項に記載の強誘電体キャパシタの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004220156A JP4318607B2 (ja) | 2004-07-28 | 2004-07-28 | 強誘電体キャパシタの製造方法 |
US11/105,439 US7157288B2 (en) | 2004-07-28 | 2005-04-14 | Method of producing ferroelectric capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004220156A JP4318607B2 (ja) | 2004-07-28 | 2004-07-28 | 強誘電体キャパシタの製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006041246A JP2006041246A (ja) | 2006-02-09 |
JP2006041246A5 JP2006041246A5 (ja) | 2006-11-30 |
JP4318607B2 true JP4318607B2 (ja) | 2009-08-26 |
Family
ID=35905912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004220156A Expired - Fee Related JP4318607B2 (ja) | 2004-07-28 | 2004-07-28 | 強誘電体キャパシタの製造方法 |
Country Status (2)
Country | Link |
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US (1) | US7157288B2 (ja) |
JP (1) | JP4318607B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4621081B2 (ja) * | 2005-07-07 | 2011-01-26 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
JP4838613B2 (ja) * | 2006-03-28 | 2011-12-14 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP2009071241A (ja) * | 2007-09-18 | 2009-04-02 | Seiko Epson Corp | 半導体装置及びその製造方法 |
US8451308B2 (en) | 2009-07-31 | 2013-05-28 | Ricoh Company, Ltd. | Image forming apparatus |
Family Cites Families (6)
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KR0131743B1 (ko) * | 1993-12-28 | 1998-04-15 | 김주용 | 디램셀의 저장전극 형성방법 |
US6495413B2 (en) | 2001-02-28 | 2002-12-17 | Ramtron International Corporation | Structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuits |
US6423592B1 (en) | 2001-06-26 | 2002-07-23 | Ramtron International Corporation | PZT layer as a temporary encapsulation and hard mask for a ferroelectric capacitor |
US20030143853A1 (en) | 2002-01-31 | 2003-07-31 | Celii Francis G. | FeRAM capacitor stack etch |
US6753247B1 (en) * | 2002-10-31 | 2004-06-22 | Advanced Micro Devices, Inc. | Method(s) facilitating formation of memory cell(s) and patterned conductive |
US7001821B2 (en) * | 2003-11-10 | 2006-02-21 | Texas Instruments Incorporated | Method of forming and using a hardmask for forming ferroelectric capacitors in a semiconductor device |
-
2004
- 2004-07-28 JP JP2004220156A patent/JP4318607B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-14 US US11/105,439 patent/US7157288B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20060046315A1 (en) | 2006-03-02 |
US7157288B2 (en) | 2007-01-02 |
JP2006041246A (ja) | 2006-02-09 |
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