JP4295614B2 - 有機ポリマー表面に無機薄膜を成膜する方法 - Google Patents
有機ポリマー表面に無機薄膜を成膜する方法 Download PDFInfo
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- JP4295614B2 JP4295614B2 JP2003513707A JP2003513707A JP4295614B2 JP 4295614 B2 JP4295614 B2 JP 4295614B2 JP 2003513707 A JP2003513707 A JP 2003513707A JP 2003513707 A JP2003513707 A JP 2003513707A JP 4295614 B2 JP4295614 B2 JP 4295614B2
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- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 229920013730 reactive polymer Polymers 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 238000002460 vibrational spectroscopy Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/02—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
- B01J31/06—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides containing polymers
- B01J31/069—Hybrid organic-inorganic polymers, e.g. silica derivatized with organic groups
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/042—Coating with two or more layers, where at least one layer of a composition contains a polymer binder
- C08J7/0423—Coating with two or more layers, where at least one layer of a composition contains a polymer binder with at least one layer of inorganic material and at least one layer of a composition containing a polymer binder
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/043—Improving the adhesiveness of the coatings per se, e.g. forming primers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/046—Forming abrasion-resistant coatings; Forming surface-hardening coatings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/048—Forming gas barrier coatings
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2231/00—Catalytic reactions performed with catalysts classified in B01J31/00
- B01J2231/10—Polymerisation reactions involving at least dual use catalysts, e.g. for both oligomerisation and polymerisation
- B01J2231/12—Olefin polymerisation or copolymerisation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2231/00—Catalytic reactions performed with catalysts classified in B01J31/00
- B01J2231/70—Oxidation reactions, e.g. epoxidation, (di)hydroxylation, dehydrogenation and analogues
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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Description
様々な理由により、無機被膜を有するポリマーは望ましい特性を実現することが期待されている。例えば、炭化水素、H2O及びO2などの気体に関しては、ほとんどのポリマーを通るガス透過率が非常に高い。このようなガス透過率は、食品及び医療用包装に使用されるポリマーの品質に影響を及ぼす。H2O及びO2は、外部から包装内部へ拡散して内容物の品質を低下させる場合がある。Al2O3及びSiO2膜などの無機薄膜は、ポリマーと比較して透過率が非常に低い。そのような薄膜は、潜在的にポリマーフィルムへのガス透過を防ぐ拡散隔壁を形成し得る。
その他の用途に関しては、有機ポリマー上へ触媒材料の付着性被膜を成膜させて担持触媒を形成することが望ましいであろう。そのようなポリマーを担体とする触媒は気相重合工程に有用であろう。現在、シリカやアルミナが触媒の担体として使用されている。これは、シリカやアルミナの残留物による新しいポリマーの汚染につながる。このような汚染は、一体構造のシリカ又はアルミナベースの触媒担体を、ポリマー担体と置き換えることができれば、最小限に抑えることができる。
超小型電子機器の分野では、低誘電率 (low-k) 絶縁層としてポリマーが使用されている。それら低誘電率薄膜の成膜は困難である。ポリマー基質表面上へ酸化物層を成膜させることにより、他の物質の成膜を可能にするベース表面を与えることが可能である。そのような物質の一つが窒化チタンであり、銅拡散隔壁として使用されるものである。酸化物層は又、ポリマー表面上で直接生成できる場合より簡単に金属エッチングを容易にし得る。
ポリマー基質上へ非常に薄い無機材料被膜を成膜させる方法を提供することが望まれている。さらには、ポリマーに付着させた無機材料の薄い成膜を有する有機ポリマーを提供することが望まれている。
別の態様において、本発明は、厚さが200nm以下の薄膜又はそれぞれが独立した粒子の形態の無機材料をその上に有するポリマー基質である。 好ましい態様では、この無機材料は、その上に第2の無機材料が成膜される付着層として機能する。付着層は、それがない場合にはポリマー基質に対してほとんど付着しないような材料を成膜することを可能とする。
第3の態様において、本発明は、第2の態様のポリマー基質から製造されたナノコンポジットである。
第4の態様において、本発明は、第2の態様のポリマー基質から作られたる製造部品である。
第5の態様において、本発明は、第2の態様のポリマー基質で絶縁された銅又はアルミニウムの配線から構成される半導体素子である。
ポリマー基質は、反応工程開始前に、表面上へ吸収されたかもしれない揮発性物質を取り除くような処理をされるべきである。これは、基質を高温及び/又は真空状態におくことによって容易になされる。次いでポリマー基質を順次的に気体反応物質に接触させる。反応は、有機ポリマーがその物理的形状を失うのに十分なほど、劣化したり、溶融したり軟化したりするに温度よりも低い温度で実施する。多くのポリマーは中程度の上昇温度(例えば、400〜550K)で劣化したり、溶融したり軟化する。従って、ALD反応が実施される温度は、一般的に550K、好ましくは400K、より好ましくは約373K、特に好ましくは350Kより低く、その上限温度は被膜される特定の有機ポリマーに依存する。反応物質は、反応が実施される温度において気体である。特に好ましくは、反応物質は300Kの温度において少なくとも10torr(約133Pa)以上の蒸気圧を有する。さらに、反応物質は、上述の温度において無機材料を形成する反応に従事可能なように選択される。 要求される温度での反応を促進するのに触媒を使用してもよい。
本発明はいずれの理論にも限定されないが、湿潤反応物はALD条件下で適用された場合にポリマー基質の表面上へ吸着されると考えられる。湿潤反応物は、ポリマー表面の微小な孔や欠陥内や、又は分子レベルにおけるポリマー鎖間へなど、ポリマー表面下へある程度浸透する傾向がある。湿潤反応物分子は、よって、ポリマー表面上へ吸着され、その他の反応物が付着して無機材料を形成するよう反応可能な部分を作る。ALD反応物の1つがポリマー表面へ吸着された場合、1つ以上のその他のALD反応物がポリマー表面を湿潤させない場合でさえ、ALD反応工程が開始して無機被膜付着層の形成が可能となる。例えば、反応物として水を使用するALD法、ポリオレフィンやオルガノシリコーンなどの高度に非極性基質においてでさえも、トリメチルアルミニウムなどの湿潤反応物を使用すれば、効率よく実施することができる。
2Al(CH3)3 + 3H2O → Al2O3 + 6CH4
である。
Al-(CH3)* + H2O → Al-OH* (A1)
Al-OH* + Al(CH3)3 * → Al-O-Al(CH3)2 * + CH4 (B1)
アステリスク(*)は、無機材料表面における物質を示す。アルミナを成膜する、この特定の反応順序は、反応が350Kを下回る温度で進行するため、特に好ましい。この特定の反応工程はABサイクルごとに約1.2Åの速度でAl2O3を成膜させる傾向がある。 ポリマー基質において、特に最初の25〜50回のAB反応サイクル間で、いくぶん速い成長速度が見られることがある。このことは、初期の反応サイクルの間にTMAがポリマー基質内へ浸透してAl2O3成膜を形成することに起因すると考えられる。トリエチルアルミニウム(TEM)も又、この反応工程においてTMAの代わりに使用することができる。
WF6 + Si2H6 → W + 2SiF3H + 2H2
を、以下に示す反応順序に分割することができる。いずれの反応物も良好な湿潤反応物ではないため、アルミナ付着層を上述のように最初に形成することができる。アルミナ層は、以下のタングステン形成反応を開始させる部文を作るAl−OH表面物を含む。
Al-OH*(基質表面) + Si2H6 → Al-O-SiH3 * + SiH4
Al-O-SiH3 * + WF6 → Al-O-WF5 * + SiFH3 (前駆体反応)
Al-O-WF5* + Si2H6 → Al-O-W-SiF2H* + SiF3H + 2H2 (A2)
Al-O-W-SiF2H* + WF6 → Al-O-W-WF5 + SiF3H (B2)
アステリスク(*)は、基質表面又は適用膜に存在する表面物を示す。前駆体反応が一旦完了した後、所望の膜厚のタングステン層が形成されるまで反応A2及びB2を交互に実施する。
Al*-O-H(基質表面) + M2Xn → Al-O-M2*Xn-1 + HX (前駆体反応)
Al-O-M2X* + H2 → Al-O-M2-H* + HX (A3)
Al-O-M2-H* + M2 → Al-O-M2-M2*(acac) + H(acac) (B3)
"Acac"は、アセチルアセトネート配位子であり、Xは置換可能な求核基である。前記同様、アステリスク(*)は表面物を示す。充分な温度まで加熱することにより、M2-Hが表面からH2として熱的に放出するため、水素が表面と結合し、それにより、M2原子からなる最終表面が生成される。コバルト、鉄及びニッケルは、反応式A3/B3によって被膜するのに好ましい金属である。
R-Z-H* + M1Xn → R-Z-M1Xn-1 * + HX (A4)
R-Z-M1X* + H2O → R-Z-M1OH* + HX (B4)
R-Z-H* + M1Xn → R-Z-M1Xn-1 * + HX (A5)
R-Z-M1X* + NH3 → R-Z-M1NH2 * + HX (B5)
アンモニアを除去して層内又は層間にM1-N-M1結合を形成することができる。この反応は、所望であれば、例えば、昇温及び/又は減圧での焼きなましによって促進可能である。
硫化物被膜を生成するための例示的反応工程は、以下の通りである。
R-Z-H* + M1Xn → R-Z-M1Xn-1 * + HX (A6)
R-Z-M1X* + H2S → R-Z-M1SH* + HX (B6)
硫化水素を除去して層内又は層間にM1-S-M1結合を形成することができる。この反応は、前記のように、所望であれば、例えば、昇温及び/又は減圧での焼きなましによって促進可能である。
前述の反応工程における好適な置換可能な求核基は、M1によってある程度変わるが、例えば、フッ化物、塩化物、臭化物、アルコキシ、アルキル、アセチルアセトネートなどが含まれる。特に重要なM1Xn構造を有する具体的な化合物は、四塩化ケイ素、オルトケイ酸テトラメチル(Si(OCH3)4)、オルトケイ酸テトラエチル(Si(OC2H5)4)、トリメチルアルミニウム(Al(CH3)3)、トリエチルアルミニウム(Al(C2H5)3)、その他のトリアルキルアルミニウム化合物などである。
R-OH + C1 → R-OH…C1 (A7a)
R-OH…C1 + R1-M1-R1 → R-O-M1-R1 + R1-H + C1 (A7b)
R-O-M1-R1 + C2 → R-M1-R1…C2 (B7a)
R-O-M1-R1…C2 + H2O → R-O-M1-OH + R1-H + C2 (B7b)
Al-OH*(付着層) + C5H5N → Al-OH…C5H5N* (A8a)
Al-OH…C5H5N* + SiCl4 → Al-O-SiCl3 * + C5H5N + HCl (A8b)
Al-O-SiCl3 * + C5H5N → Al-O-SiCl3…C5H5N* (B8a)
Al-O-SiCl3…C5H5N* + H2O → Al-O-SiOH* + C5H5N + HCl (B8b)
ここでアステリスク(*) は表面における原子であることを再度示しておく。この一般的な方法は、シリカ、ジルコニアや二酸化チタンを含む種々の被膜の形成に応用できる。
ALD法で形成された無機成膜は、独立した粒子形態又は連続的あるいは半連続的な薄膜の形態をとり得る。成膜の物理的形状は、ポリマー基質の物理的形状及び反応工程の反復回数などの因子に影響される。 最初の1回又は数回の反応工程で形成された無機材料が不連続的に成膜する傾向がある場合が非常に多いことが判明している。反応工程が継続する場合、初期の不連続な成膜は、さらに無機材料が成膜すると相互結合することが多々ある。
あるいは又、無機材料の障壁層を、前述のALD法を用いて予め製造した袋、ビン又は他の型の保存容器、手袋又は保護用衣料物品に適用してもよい。そのような物品を製造するさらに別の方法は、ポリマー粒子に無機被膜を成膜し、次いでその被覆ポリマー粒子から、物品上にポリマーフィルムを形成する方法である。ポリマー全体及び製造物品の表面全体に拡散した障壁を作るのにそれら方法を組み合わせて用いることができる。
障壁特性が所望される別用途には、テニスボール、その他の運動用具、風船、空気タイヤなど、膨張性物品がある。ブチルゴムなどの弾性ポリマーは、本発明による無機材料薄膜で被覆し、そのような膨張性物品の障壁層として好ましい材料を形成することができる。
そのような実施例は、low-k誘電性ポリマーにおけるTiN又はTaNなどの拡散障壁である成膜である。半導体素子は、SiO2誘電体層で絶縁したアルミニウム合金内部配線を用いる場合が多い。半導体素子は、微細な寸法形状で組み立てられると、内部配線の抵抗-コンデンサ(RC)時定数が最終的に素子の応答速度を制限する。RC時定数を減少させる一つの戦略は、アルミニウムを銅で置換することである。
Al2O3/ZnO混合物は、導電層を様々な抵抗率に定めるのに使用することができる。Al2O3/ZnO合金系は、抵抗率が実に10の18乗の範囲にわたるため、本発明による非導電性ポリマー基質上に成膜された場合、ポリマー基質に対して制御可能な導電率を有する導電層を提供できる。
本発明によるポリマー粒子は、多種多様な被覆用途用被膜を製造するための、水性相及び/又は有機液相中の分散物として形成することができる。
多くの場合、成膜された無機材料はポリマー基質の保護被膜として機能し得る。例えば、ほとんどの場合、そのような被膜は紫外線、化学薬品又は侵食防壁特性を被覆ポリマーに付与する。これら防壁特性により、例えば、広範囲の機器、自動車又は建築用途の構成部品として使用されるポリマーの耐用年数を向上又は延長することができる。無機材料は、様々な構造学的及び工学的用途のポリマーから作製される成形部品に成膜しても、又は後に構造的部品を作製するよう形成されるポリマーシート又は粒子上に成膜してもよい。
別の用途において、本発明により被覆されたポリマー粒子は、封入電子部品に使用することができる。特に重要なのが、アルミナで被膜された固体エポキシ樹脂である。アルミナ層は、ポリマー粒子とAlN、BN又はSi3N4などの様々な充填剤との適合性を強化する。さらにはそれら窒化物の被膜をポリマー粒子自体に(好ましくはアルミナ付着層を用いて) 適用できる。
以下の実施例は、本発明を説明するために提供されるが、これらは本発明の範囲を限定するものではない。全ての部及びパーセント(%)は、特に説明しない限り重量に基づく。
上述の反応工程A1/B1を用いて、Al2O3ALDを350Kで実施した。反応の進行を監視するのにFTIRを使用した。反応工程を開始する前に、LDPE粒子のFTIRスペクトルは2960〜2840 cm-1において顕著なC-H伸縮振動を、1465 cm-1においてC-C伸縮振動を示した。ポリエチレン炭化水素鎖に起因するさらなる振動の特徴が、720、1110、1300及び1375cm-1で観測された。LDPE粒子を、最初に350KでH2Oに接触させた。LDPE粒子が疎水性であるため、H2Oに関連した振動の特徴、特にO-H振動伸縮の特徴は、最初のH2O接触後のFTIRでは観測されなかった。
TMA/H2Oサイクルを継続すると、Al2O3バルク振動特徴の成長が500〜950 cm-1で現れるようになる。この特徴は、反応サイクルを繰り返すと累進的に成長し、LDPE粒子へのAl2O3の成膜が確立する。
ポリプロピレン(PP)へのAl2O3の芳香族化合物層成膜を、石英結晶微量天秤法(QCM)を用いて実施した。QCM法は、質量に対して非常に敏感であるため、Al2O3の原子層の成膜分画に相当する約0.3ng/cm2の質量変化を簡単に測定することができる。QCMセンサー上に種々のポリマーフィルムをスピン被覆することにより、種々の化学種の吸着をポリマーフィルム上で正確に測定することができる。同様に、ポリマーフィルムへの薄い被膜の成長も又非常に正確に監視できる。
ALD工程中の質量測定により、TMA反応物接触時に質量が大きく増大したことが明らかになった。続いて、TMAパルス後のパージ時には質量は減少した。この質量の減少は吸着されたTMAのうちのある程度の損失に相当する。質量の減少はH2O反応パルスの導入によって停止した。しかし、H2O反応パルスに相応する明らかな質量の増加はなく、これは、-CH3基が-OH基で置換されたことに一致する。
約6000Åの厚さでQCMに成膜させたポリプロピレン薄膜を用いて実施例2を繰り返した。やはり1-20-1-20というt1-t2-t3-t4パルスシーケンスを用いてAl2O3ALDを80℃で実施した。実施例2の結果に類似して、TMA反応パルスによってQCMで記録された質量の増大は大きかった。TMA反応パルス後のパージ中、質量は減少した。この振る舞いも、TMA反応パルス中のPPポリマーへのTMAの拡散として説明される。続いて、TMA反応パルス後のパージ中に、TMAのいく分かが拡散した。TMAとH2Oの反応パルスの反復により、Al2O3の成長に伴った累進的な質量の増大が生じた。しかし、TMA反応パルス中の質量増大の規模は、TMA/H2O反応サイクルの数に対して減少した。この大きな減少は、Al2O3ALD薄膜の成長に起因する。Al2O3ALD薄膜は拡散障壁として機能し、TMAのPPポリマーフィルム中への拡散を妨げる。約15回のTMA/H2O反応サイクル後、TMA/H2O反応サイクルの数に伴って質量は非常に線形的に増大した。TMA反応パルス中に質量の増大は減少した。これら両方の観察は、最初の15回のTMA/H2O反応サイクル中にAl2O3の拡散障壁が形成されたことに一致する。PPポリマー表面上に、一旦Al2O3ALD拡散障壁が確立すると、平坦な酸化物表面上のAl2O3ALDについて予測した通り、Al2O3ALD薄膜は線形的に成長する。
ポリビニルクロリド(PVC)ポリマーフィルムを用いて実施例2を繰り返した。実施例2と3で見られたようなPPへのAl2O3ALDと比較して、非常によく似た振る舞いが観測された。Al2O3成膜を、1-20-1-20というt1-t2-t3-t4パルスシーケンスを用いて80℃で実施した。
TMAは、TMA反応パルスの間にPVCポリマー中へ容易に拡散した。しかし、PPの結果とは対照的に、TMA反応パルス後のパージ時間中にTMAは拡散しなかった。この振る舞いは、TMAが、PPよりも、より強力にPVCに吸着されることを示している。多量のTMAが最初のTMA/H2O反応サイクル中に吸収された。おおよそ15回のTMA/H2O反応サイクル後は、TMA反応パルス中に大きな質量増大が観察されることはなかった。この振る舞いはAl2O3拡散障壁がPVCポリマーフィルムに形成されたことを示している。さらなるTMA/H2O反応サイクルについては、質量はAl2O3ALD薄膜の成長について予想した通り線形的に増大した。
Claims (13)
- ポリマー基質の表面上で少なくとも2つの自己停止反応を連続して行い、該ポリマー基質の表面上に無機材料を成膜させることから成り、該自己停止反応が、該ポリマーがその物理的形状を失うのに十分なほど劣化、溶融又は軟化する温度よりも低い温度で行われ、かつ反応条件下で気相である反応物質を用いて行われ、該自己停止反応の反応物の少なくとも1つが該ポリマー基質の表面を湿潤させ、該ポリマー基質が、ハロゲン原子、水酸基、カルボニル基、カルボン酸基、第一級アミノ基または第二級アミノ基の官能基を含まず、該無機材料が膜厚が0.5〜200nmの連続薄膜の形態である、無機材料をポリマー基質材料上に成膜する方法。
- 前記方法が原子層成膜方法である請求項1に記載の方法。
- 前記ポリマー基質がフィルム形状である請求項1又は2に記載の方法。
- 前記ポリマー基質が粒子形状である請求項1又は2に記載の方法。
- 前記粒子状ポリマー基質の層を流動化することによって行われる請求項4に記載の方法。
- 前記無機材料がアルミナである請求項1〜5のいずれか一項に記載の方法。
- 前記アルミナの上に追加の無機材料が成膜される請求項6に記載の方法。
- 前記追加の無機材料が窒化チタン又は窒化タンタルである請求項7に記載の方法。
- 前記ポリマー基質が、低密度ポリエチレン、線状低密度ポリエチレン、実質的線状ポリエチレン、高密度ポリエチレン、ポリプロピレン、ポリブチレン、ポリスチレン、ポリ(ナフタレン)、共役ジエンのポリマー、PTFE、又はオルガノシリコーンポリマーである請求項1〜8のいずれか一項に記載の方法。
- 請求項1〜9のいずれか一項に記載の方法によって無機材料がその上に成膜されたポリマー基質から成るポリマー組成物。
- 請求項10に記載のポリマー組成物を用いて製造された袋、ビン又はその他の容器。
- 前記無機材料が気体及び蒸気拡散障壁として用いられている請求項11に記載の袋、ビン又はその他の容器。
- 請求項10に記載のポリマー組成物を溶融加工することにより製造されたナノコンポジット。
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---|---|---|---|---|
TW548239B (en) | 2000-10-23 | 2003-08-21 | Asm Microchemistry Oy | Process for producing aluminium oxide films at low temperatures |
US7476420B2 (en) | 2000-10-23 | 2009-01-13 | Asm International N.V. | Process for producing metal oxide films at low temperatures |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
CN100390105C (zh) | 2003-03-26 | 2008-05-28 | 圣戈本陶瓷及塑料股份有限公司 | 具有氧化层的碳化硅陶瓷部件 |
KR20120061906A (ko) * | 2003-05-16 | 2012-06-13 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 원자층 증착에 의해 제작된 플라스틱 기판용 배리어 필름 |
US20050056219A1 (en) * | 2003-09-16 | 2005-03-17 | Tokyo Electron Limited | Formation of a metal-containing film by sequential gas exposure in a batch type processing system |
US20050172897A1 (en) * | 2004-02-09 | 2005-08-11 | Frank Jansen | Barrier layer process and arrangement |
US7767220B2 (en) * | 2004-04-23 | 2010-08-03 | Boston Scientific Scimed, Inc. | Implantable or insertable medical articles having covalently modified, biocompatible surfaces |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US8501277B2 (en) | 2004-06-04 | 2013-08-06 | Applied Microstructures, Inc. | Durable, heat-resistant multi-layer coatings and coated articles |
DE102005025083B4 (de) * | 2005-05-30 | 2007-05-24 | Infineon Technologies Ag | Thermoplast-Duroplast-Verbund und Verfahren zum Verbinden eines thermoplastischen Materials mit einem duroplastischen Material |
US7651955B2 (en) | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7648927B2 (en) | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US20080014380A1 (en) * | 2006-05-12 | 2008-01-17 | Steven Jones | Iridescent film with barrier properties |
GB2445218B (en) * | 2006-09-21 | 2011-05-25 | Smith International | Atomic layer deposition nanocoating on cutting tool powder materials |
US20080100202A1 (en) * | 2006-11-01 | 2008-05-01 | Cok Ronald S | Process for forming oled conductive protective layer |
WO2008069894A2 (en) * | 2006-11-13 | 2008-06-12 | The Regents Of The University Of Colorado, A Body Corporate | Molecular layer deposition process for making organic or organic-inorganic polymers |
US7749574B2 (en) * | 2006-11-14 | 2010-07-06 | Applied Materials, Inc. | Low temperature ALD SiO2 |
US7776395B2 (en) * | 2006-11-14 | 2010-08-17 | Applied Materials, Inc. | Method of depositing catalyst assisted silicates of high-k materials |
US20080119098A1 (en) * | 2006-11-21 | 2008-05-22 | Igor Palley | Atomic layer deposition on fibrous materials |
US20080138538A1 (en) * | 2006-12-06 | 2008-06-12 | General Electric Company | Barrier layer, composite article comprising the same, electroactive device, and method |
US7781031B2 (en) * | 2006-12-06 | 2010-08-24 | General Electric Company | Barrier layer, composite article comprising the same, electroactive device, and method |
US20080138624A1 (en) * | 2006-12-06 | 2008-06-12 | General Electric Company | Barrier layer, composite article comprising the same, electroactive device, and method |
US8236379B2 (en) | 2007-04-02 | 2012-08-07 | Applied Microstructures, Inc. | Articles with super-hydrophobic and-or super-hydrophilic surfaces and method of formation |
US20080248263A1 (en) * | 2007-04-02 | 2008-10-09 | Applied Microstructures, Inc. | Method of creating super-hydrophobic and-or super-hydrophilic surfaces on substrates, and articles created thereby |
WO2009052352A1 (en) * | 2007-10-17 | 2009-04-23 | Princeton University | Functionalized substrates with thin metal oxide adhesion layer |
US20130020507A1 (en) | 2010-06-17 | 2013-01-24 | Life Technologies Corporation | Methods for Detecting Defects in Inorganic-Coated Polymer Surfaces |
KR101609396B1 (ko) * | 2007-12-17 | 2016-04-05 | 라이프 테크놀로지스 코포레이션 | 무기 코팅된 중합체 표면에서 결함을 검출하는 방법 |
US11084311B2 (en) | 2008-02-29 | 2021-08-10 | Illinois Tool Works Inc. | Receiver material having a polymer with nano-composite filler material |
US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
FI122032B (fi) * | 2008-10-03 | 2011-07-29 | Teknologian Tutkimuskeskus Vtt | Kuitutuote, jossa on barrierkerros ja menetelmä sen valmistamiseksi |
BRPI0922795A2 (pt) * | 2008-12-05 | 2018-05-29 | Lotus Applied Tech Llc | alta taxa de deposição de filmes finos com propriedades de camada de barreira melhorada |
FI20095947A0 (fi) * | 2009-09-14 | 2009-09-14 | Beneq Oy | Monikerrospinnoite, menetelmä monikerrospinnoitteen valmistamiseksi, ja sen käyttötapoja |
BR112012005212A2 (pt) * | 2009-09-22 | 2016-03-15 | 3M Innovative Properties Co | método para aplicação de revestimetos por deposição de camada atômica em subtratos não cerâmicos porosos |
CN102639749B (zh) | 2009-10-14 | 2015-06-17 | 莲花应用技术有限责任公司 | 在原子层沉积***中抑制过量前体在单独前体区之间运送 |
US8637123B2 (en) * | 2009-12-29 | 2014-01-28 | Lotus Applied Technology, Llc | Oxygen radical generation for radical-enhanced thin film deposition |
CN103025915B (zh) | 2010-06-08 | 2015-08-05 | 哈佛大学校长及研究员协会 | 低温合成二氧化硅 |
CN103079807A (zh) * | 2010-08-13 | 2013-05-01 | 旭硝子株式会社 | 层叠体和层叠体的制造方法 |
US11038144B2 (en) | 2010-12-16 | 2021-06-15 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus |
TWI429526B (zh) | 2011-12-15 | 2014-03-11 | Ind Tech Res Inst | 水氣阻障複合膜及封裝結構 |
US9051441B2 (en) | 2012-03-29 | 2015-06-09 | Xerox Corporation | Process for chemical passivation of polymer surfaces |
CN104254442B (zh) | 2012-04-25 | 2017-02-22 | 柯尼卡美能达株式会社 | 气体阻隔性膜、电子设备用基板和电子设备 |
EP2850222A4 (en) * | 2012-05-14 | 2016-01-20 | Picosun Oy | COATING PARTICLES OF A POWDER USING AN ATOMIC LAYER DEPOSITION CARTRIDGE |
TWI592310B (zh) * | 2012-10-18 | 2017-07-21 | 凸版印刷股份有限公司 | 積層體、阻氣薄膜及其製造方法 |
EP3092259A4 (en) * | 2013-12-03 | 2017-07-26 | Bar Ilan University | Polyolefins having long lasting hydrophilic interfaces |
KR20150109984A (ko) * | 2014-03-21 | 2015-10-02 | 삼성전자주식회사 | 기체 차단 필름, 이를 포함하는 냉장고 및 기체 차단 필름의 제조방법 |
WO2016011412A1 (en) | 2014-07-17 | 2016-01-21 | Ada Technologies, Inc. | Extreme long life, high energy density batteries and method of making and using the same |
WO2016012046A1 (en) * | 2014-07-24 | 2016-01-28 | Osram Gmbh | Method for producing a barrier layer and carrier body comprising such a barrier layer |
CN106661727B (zh) * | 2014-07-29 | 2020-05-05 | 凸版印刷株式会社 | 层叠体及其制造方法、以及阻气膜及其制造方法 |
US10420370B2 (en) * | 2014-11-17 | 2019-09-24 | R.J. Reynolds Tobacco Products | Moisture barriers for paper materials |
JP6011652B2 (ja) * | 2015-02-02 | 2016-10-19 | 凸版印刷株式会社 | ガスバリア性積層体およびこの製造方法 |
WO2016209460A2 (en) | 2015-05-21 | 2016-12-29 | Ada Technologies, Inc. | High energy density hybrid pseudocapacitors and method of making and using the same |
US11996564B2 (en) | 2015-06-01 | 2024-05-28 | Forge Nano Inc. | Nano-engineered coatings for anode active materials, cathode active materials, and solid-state electrolytes and methods of making batteries containing nano-engineered coatings |
US12027661B2 (en) | 2015-06-01 | 2024-07-02 | Forge Nano Inc. | Nano-engineered coatings for anode active materials, cathode active materials, and solid-state electrolytes and methods of making batteries containing nano-engineered coatings |
US10692659B2 (en) | 2015-07-31 | 2020-06-23 | Ada Technologies, Inc. | High energy and power electrochemical device and method of making and using same |
US10364491B2 (en) | 2016-11-02 | 2019-07-30 | Georgia Tech Research Corporation | Process to chemically modify polymeric materials by static, low-pressure infiltration of reactive gaseous molecules |
TW201823501A (zh) * | 2016-11-16 | 2018-07-01 | 美商陶氏全球科技有限責任公司 | 用於製造膜上之薄塗層之方法 |
JP6568127B2 (ja) * | 2017-03-02 | 2019-08-28 | 株式会社Kokusai Electric | 半導体装置の製造方法、プログラム及び記録媒体 |
US11024846B2 (en) | 2017-03-23 | 2021-06-01 | Ada Technologies, Inc. | High energy/power density, long cycle life, safe lithium-ion battery capable of long-term deep discharge/storage near zero volt and method of making and using the same |
US11038162B2 (en) | 2017-05-31 | 2021-06-15 | Alliance For Sustainable Energy, Llc | Coated semiconductor particles and methods of making the same |
US11344850B2 (en) * | 2017-10-27 | 2022-05-31 | Michael Tsapatsis | Nanocomposite membranes and methods of forming the same |
JP7003859B2 (ja) * | 2018-07-13 | 2022-01-21 | 住友金属鉱山株式会社 | 表面被覆近赤外線遮蔽微粒子の製造方法と表面被覆近赤外線遮蔽微粒子 |
US11629403B2 (en) * | 2018-10-19 | 2023-04-18 | Rosemount Aerospace Inc. | Air data probe corrosion protection |
US11117346B2 (en) | 2019-07-18 | 2021-09-14 | Hamilton Sundstrand Corporation | Thermally-conductive polymer and components |
US11535958B2 (en) | 2019-08-09 | 2022-12-27 | Raytheon Technologies Corporation | Fiber having integral weak interface coating, method of making and composite incorporating the fiber |
US12030820B2 (en) | 2019-08-09 | 2024-07-09 | Rtx Corporation | High temperature fiber, method of making and high temperature fiber composites |
CN112175220B (zh) * | 2020-09-03 | 2023-01-03 | 广东以色列理工学院 | 耐高温的改性聚丙烯薄膜及其制备方法和应用 |
FR3119104B1 (fr) * | 2021-01-28 | 2024-02-02 | Commissariat Energie Atomique | Procédé de formation d’un réseau métallo-organique |
CN113564527B (zh) * | 2021-08-10 | 2022-06-07 | 中国科学院兰州化学物理研究所 | 一种抗辐照无氢碳膜聚合物润滑材料及其制备方法和应用 |
WO2023025634A1 (de) | 2021-08-23 | 2023-03-02 | Saint-Gobain Glass France | Abstandhalter mit feuchtigkeitsbarriere |
CN114318292B (zh) * | 2021-12-31 | 2024-03-29 | 中储粮成都储藏研究院有限公司 | 一种利用化学气相沉积法包覆阻燃性膜层的方法 |
WO2023201094A2 (en) | 2022-04-14 | 2023-10-19 | Forge Nano, Inc. | Methods of reactive drying a separator during battery manufacturing, dried separators, and batteries containing the separator |
CN114907566B (zh) * | 2022-05-11 | 2023-03-14 | 江南大学 | 一种聚酰亚胺-金属单原子复合材料及其制备方法与应用 |
CN114958036B (zh) * | 2022-06-30 | 2023-12-01 | 丰田自动车株式会社 | 一种珠光颜料及其制备方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3597579A (en) * | 1970-06-25 | 1971-08-03 | Western Electric Co | Method of trimming capacitors |
JPS5825221B2 (ja) * | 1977-12-12 | 1983-05-26 | 株式会社クラレ | Fet比較電極 |
JPS60103024A (ja) * | 1983-11-09 | 1985-06-07 | Mitsui Toatsu Chem Inc | 水酸化アルミニウム粉末およびアルミナ粉末の製造法 |
US5271969A (en) * | 1985-10-29 | 1993-12-21 | Atsushi Ogura | Method of manufacturing metal oxide ceramic composite powder |
US5705265A (en) * | 1986-03-24 | 1998-01-06 | Emsci Inc. | Coated substrates useful as catalysts |
US5603983A (en) * | 1986-03-24 | 1997-02-18 | Ensci Inc | Process for the production of conductive and magnetic transitin metal oxide coated three dimensional substrates |
US4888203A (en) * | 1987-11-13 | 1989-12-19 | Massachusetts Institute Of Technology | Hydrolysis-induced vapor deposition of oxide films |
US5362667A (en) * | 1992-07-28 | 1994-11-08 | Harris Corporation | Bonded wafer processing |
US5273942A (en) * | 1990-10-19 | 1993-12-28 | Rutgers University | Ceramic powder useful in the manufacture of green and densified fired ceramic articles |
US5306666A (en) * | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
US5389401A (en) * | 1994-02-23 | 1995-02-14 | Gordon; Roy G. | Chemical vapor deposition of metal oxides |
JP2776268B2 (ja) * | 1994-10-07 | 1998-07-16 | 王子製紙株式会社 | メタライズドコンデンサ用亜鉛蒸着基材及びその製造方法 |
JPH09202963A (ja) | 1995-08-25 | 1997-08-05 | Abcor Inc | エッチングを行わずに金属化アイランド被覆製品を製造する方法 |
US5681775A (en) * | 1995-11-15 | 1997-10-28 | International Business Machines Corporation | Soi fabrication process |
EP0910468A1 (en) * | 1996-07-11 | 1999-04-28 | University of Cincinnati | Electrically assisted synthesis of particles and films with precisely controlled characteristics |
US5916365A (en) * | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
US6090442A (en) | 1997-04-14 | 2000-07-18 | University Technology Corporation | Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry |
KR100252049B1 (ko) | 1997-11-18 | 2000-04-15 | 윤종용 | 원자층 증착법에 의한 알루미늄층의 제조방법 |
US6042929A (en) * | 1998-03-26 | 2000-03-28 | Alchemia, Inc. | Multilayer metalized composite on polymer film product and process |
US5985175A (en) * | 1998-08-19 | 1999-11-16 | Osram Sylvania Inc. | Boron oxide coated phosphor and method of making same |
US6200893B1 (en) * | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
US6475276B1 (en) * | 1999-10-15 | 2002-11-05 | Asm Microchemistry Oy | Production of elemental thin films using a boron-containing reducing agent |
US6203613B1 (en) * | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
JP4556282B2 (ja) | 2000-03-31 | 2010-10-06 | 株式会社デンソー | 有機el素子およびその製造方法 |
US20010052752A1 (en) | 2000-04-25 | 2001-12-20 | Ghosh Amalkumar P. | Thin film encapsulation of organic light emitting diode devices |
US20020003403A1 (en) * | 2000-04-25 | 2002-01-10 | Ghosh Amalkumar P. | Thin film encapsulation of organic light emitting diode devices |
ATE375511T1 (de) * | 2000-07-06 | 2007-10-15 | 3M Innovative Properties Co | Zusammensetzung von mikroporöser membran und festphase für mikrodiagnostika |
US6664186B1 (en) * | 2000-09-29 | 2003-12-16 | International Business Machines Corporation | Method of film deposition, and fabrication of structures |
AU2002217978A1 (en) * | 2000-12-01 | 2002-06-11 | Clemson University | Chemical compositions comprising crystalline colloidal arrays |
WO2002071506A1 (en) | 2001-02-15 | 2002-09-12 | Emagin Corporation | Thin film encapsulation of organic light emitting diode devices |
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EP1425110A1 (en) | 2004-06-09 |
CA2452656A1 (en) | 2003-01-30 |
US9376750B2 (en) | 2016-06-28 |
WO2003008110A1 (en) | 2003-01-30 |
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