JP4289779B2 - Semiconductor mounting method and semiconductor mounting apparatus - Google Patents

Semiconductor mounting method and semiconductor mounting apparatus Download PDF

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Publication number
JP4289779B2
JP4289779B2 JP2000338415A JP2000338415A JP4289779B2 JP 4289779 B2 JP4289779 B2 JP 4289779B2 JP 2000338415 A JP2000338415 A JP 2000338415A JP 2000338415 A JP2000338415 A JP 2000338415A JP 4289779 B2 JP4289779 B2 JP 4289779B2
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electrode
electrodes
printed circuit
semiconductor element
circuit board
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JP2002141373A (en
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道朗 吉野
能彦 八木
浩二郎 中村
博之 大谷
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1182—Applying permanent coating, e.g. in-situ coating
    • H01L2224/11822—Applying permanent coating, e.g. in-situ coating by dipping, e.g. in a solder bath
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体素子とプリント回路基板を電気的に接合する半導体実装方法および装置に関するものである。
【０００２】
【従来の技術】
近年、電子機器の小型化、軽量化の要求に伴い、搭載される電子部品にも小型化が要求されるようになってきた。これを実現する手段として、従来のリード付き電子部品に変わりリードのない表面実装型の電子部品が採用されるようになった。また、さらに電子部品の占有面積を縮小するためにＩＣパッケージにかわり半導体素子を直接プリント回路基板上に搭載する半導体実装の分野の進展が著しい。
【０００３】
半導体実装においては電極部が形成された面を上にして基板に搭載し、半導体素子上の電極とプリント回路基板を金線やアルミ線で接続するワイヤボンディング方式と、電極面を下側にして搭載するフリップチップ実装方式がある。
【０００４】
後者のフリップチップ実装工法は、図６（ａ）に示すように、半導体素子１に設けられた電極２と、プリント回路基板５に設けられた電極６との電気的接合を得るために、半導体素子１の表面に形成された電極２上に接合用の突起電極(以下スタッドバンプと呼ぶ)３を形成する。そして、スタッドバンプ形成後、図６（ｂ）に示すように、半導体素子１のスタッドバンプ３の形成面を下側にして下降させ、転写台８に設けられた導電性接着剤４の膜にスタッドバンプ３の中央突起部が浸漬するように接触させる。次いで半導体素子１を引き上げると、表面張力により導電性接着剤４がスタッドバンプ３に転写される。
【０００５】
次に、図６(ｃ)に示すように、常温下で半導体素子１をプリント回路基板５の所定の位置に正確に位置決めして、スタッドバンプ３がプリント基板５の電極６に当接するように配置し、プリント回路基板５全体を適切な温度で加熱して導電性接着剤４を硬化させる。硬化させた後、プリント回路基板５全体を常温に冷却する。
【０００６】
次に再び、プリント回路基板５全体を適切な温度に加熱し、エポキシ等の熱硬化性樹脂からなる封止樹脂７を半導体素子１とプリント回路基板５の間に注入する。注入した後、プリント回路基板５全体を適切な温度に加熱し、封止樹脂７を硬化させる。これにより、フリップチップ実装工法が完了する。
【０００７】
【発明が解決しようとする課題】
しかしながら、上記従来方法では、半導体素子の電極とプリント回路基板の電極との接合部における導電性接着剤の硬化と、注入された封止樹脂７の硬化のために、２度の熱履歴が加わってしまう。それに加えて、導電性接着剤の接着強度は非常に小さい。
【０００８】
このため、２度の硬化工程で半導体素子とプリント回路基板との接合部への熱付加による熱ストレスが生じ、接合部の導電性接着剤にクラックが発生して、電気的接合が損なわれることがあった。
【０００９】
また、２度の硬化工程に要する時間が約１．５〜６時間と長いため、品質のフィードバックが遅いということも問題となっている。
そこで本発明は、上記の問題を解決できる半導体実装方法および半導体実装装置を提供することを目的とする。
【００１０】
【課題を解決するための手段】
上記課題を解決するために本発明は、半導体素子をプリント回路基板に配置してそれぞれの電極同士を電気的に接続するに際して、半導体素子の電極に形成された突起電極にのみ電極接合用の絶縁性の熱硬化性樹脂を転写供給し、プリント回路基板の所定の位置に設置して前記熱硬化性樹脂を加熱して硬化させ電極同士を接合するものである。
【００１１】
本発明によれば、工程中の温度付加工程を最小限にできて接合部への熱ストレスを抑制し、かつリードタイムを短縮することができて、高品質な半導体実装を実現することができる。
【００１２】
【発明の実施の形態】
本発明に係る請求項１記載の半導体実装方法は、半導体素子をプリント回路基板に配置してそれぞれの電極同士を電気的に接続するに際して、半導体素子の電極に形成された突起電極にのみ電極接合用の絶縁性の熱硬化性樹脂を転写供給し、プリント回路基板の所定の位置に設置し前記熱硬化性樹脂を加熱して硬化させ電極同士を接合するものである。上記方法によれば、導電性接着剤を用いず、熱硬化性樹脂を直接突起電極へ転写供給することで、温度付加工程を、熱硬化性樹脂の硬化に要する短時間とすることができて、接合部への熱ストレス(内部応力)を抑制し、接合部の導電性を低下させることなく実装工程を簡素化でき、リードタイムを短縮することが可能となるので、信頼性の高い高品質な半導体実装を実現することができる。
【００１３】
請求項２記載の半導体実装方法は、請求項１の方法において、半導体素子をプリント回路基板に配置した時に、電極の接合部を所定温度に加熱するとともに、所定荷重を付加して電極同士を圧接するものである。上記方法によれば、請求項１の作用効果に加えて、適切な温度と荷重の付加により接合を完了するため、熱硬化性樹脂の硬化反応を短時間で行えると共に、適正な加圧力でスタッドバンプと電極とを圧接接合するので、接合部における熱ストレスを抑制できて、接合部の導電性を安定して確保することができ、信頼性の高い半導体実装を実現することができる。
【００１４】
請求項３記載の半導体実装方法は、請求項２の方法において、接合部に超音波エネルギーを付加して電極同士を拡散接合するものである。上記方法によれば、請求項２の作用効果に加えて、超音波エネルギーを付加し、接合部の電極を溶融しない程度に加熱して塑性変形を生じない程度に加圧することにより、接合面に生じる原子の拡散を利用して電極同士をより強固に安定した拡散接合することができる。したがって、接合部への熱ストレスを抑制して、さらに安定した高品質な半導体実装を実現することができる。
【００１５】
請求項４記載の半導体実装装置は、半導体素子をプリント回路基板に設置してそれぞれの電極同士を電気的に接続する半導体実装装置において、半導体素子を保持して転写台に接近させ電極に形成された突起電極にのみ電極接合用の絶縁性の熱硬化性樹脂を転写供給するとともに、この半導体素子をプリント回路基板上の所定位置にに配置して電極同士を圧接し接合する作業装置を設け、前記作業装置に、熱硬化性樹脂を硬化させる加熱手段を設けたものである。上記構成によれば、熱硬化性樹脂供給用の転写台および熱硬化性樹脂を硬化させる加熱手段を有する作業装置により、半導体素子の電極上に形成された突起電極への熱硬化性樹脂の供給、半導体素子のプリント回路基板への設置、熱硬化性樹脂の硬化が１台の装置で可能となり、実装工程を簡素化し、リードタイムを短縮することが可能となり、高品質な半導体実装を実現することができる。
【００１６】
請求項５記載の半導体実装装置は、請求項４記載の構成に加えて、電極の接合部に超音波エネルギーを付加して電極同士を拡散接合する超音波照射手段を設けたものである。上記構成によれば、超音波照射手段により超音波エネルギーを接合部に付加し、接合部の電極が溶融しない程度に加熱して塑性変形を生じない程度に加圧することで、接合面に生じる原子の拡散を利用してより強固に安定して電極同士を拡散接合することができる。したがって、接合部への熱ストレスを抑制して、さらに安定した高品質な半導体実装を実現することができる。
【００１７】
以下、本発明の実施の形態を図に基づいて説明する。なお、従来例と同一部材には同一符号を付して説明は省略する。
（実施の形態１）
図１および図２は本発明に係る半導体実装方法および装置の第１の実施の形態を示すものである。
【００１８】
この実装装置は、図２に示すように、樹脂供給部２２と実装部２３とに共通する作業装置(作業ツールともいう)２１を具備し、この作業装置２１により、図１(ａ)，（ｂ）に示すように、樹脂供給部２２では、半導体素子１の電極２に形成されたスタッドバンプ３に電極接合用の熱硬化性樹脂７を転写供給し、実装部２３では、プリント回路基板５の所定の位置に半導体素子１を正確に位置決めして配置し(以下実装という)、半導体素子１の電極３とプリント回路基板５の電極６とを接合するものである。
【００１９】
前記作業装置２１は、樹脂供給部２２と実装部２３との間でガイド装置２４を介して移動自在に設けられており、内蔵された昇降駆動装置により昇降自在な昇降ツール２５を具備している。この昇降ツール２５には、加熱手段である第１加熱装置２６が内蔵されるとともに、下面に保持具(図示せず)を介して半導体素子１を保持する保持プレート２７が設けられて所定の圧力で加圧することができる。
【００２０】
前記樹脂供給部２２には、転写台９に熱硬化性樹脂７が保持されている。また実装部２３には、プリント回路基板５を支持する支持テーブル２８が配置され、第２の加熱手段である第２加熱装置２９が内蔵されている。
【００２１】
上記構成の実装装置による実装方法を図１を参照して説明する。
樹脂供給部２１では、昇降ツール２５に保持プレート２７を介して半導体素子１が接合する電極２が下面となるように保持される。そして、昇降ツール２５が下降されて、半導体素子１の電極２上に形成されたスタッドバンプ３に熱硬化性樹脂７が転写供給される。そして、作業装置２１が実装部２３に移動され、支持テーブル２８上に保持されたプリント回路基板５に対応して、半導体素子１が接合位置に正確に位置決めされる。次いで昇降ツール２５が下降されてスタッドバンプ３がプリント回路基板５の電極６に所定の加圧力で圧接され、熱硬化性樹脂７が硬化されて実装が完了する。
【００２２】
この接合に際して、第１加熱装置２６と第２加熱装置２９により、接合部となる両電極２，６および熱硬化性樹脂７が所定の温度範囲１８０℃〜２５０℃に加熱される。これにより、熱硬化性樹脂７を短時間(たとえば１０秒以内)で硬化させて接合されるので、また半導体素子１やプリント回路基板５に内部応力が発生することがない。ここで接合部の加熱温度を１８０℃〜２５０℃の範囲としたのは、１８０℃未満では、熱硬化性樹脂７の硬化反応が遅く、硬化に長時間を要するためであり、また２５０℃を越えると半導体素子１に内部応力が発生して接合部の電気抵抗値が増大する恐れがあるからである。
【００２３】
また昇降駆動装置により、昇降ツール２５を介して接合部には、１９６〜７８４Ｎ(２０〜８０ｋｇｆ)の加圧力(荷重)が付与される。これにより、これらの接合部でスタッドバンプ３と電極６との接触する面積が安定して確保されるので、接合部の電気抵抗値のバラツキが抑制されて安定した接合ができる。ここで、接合時に付加される加圧力を１個のスタッドバンプ当たり１９６〜７８４Ｎの範囲としたのは、１９６Ｎ未満では、電極２(３)，６間の接触面積が不足して電気抵抗が高くなったり、接触面積にバラツキが生じて電気抵抗値が変化し、接合部の品質が安定しないからであり、また７８４Ｎを越えると、プリント回路基板５と半導体素子１のギャップが狭くなって信頼性が低下するからである。
【００２４】
上記実施の形態１によれば、導電性接着剤を用いず、熱硬化性樹脂７を直接スタッドバンプ３へ転写供給することで、熱硬化性樹脂による硬化接合に要する時間を極めて短縮することができて、半導体素子１やプリント回路基板５の熱ストレス(内部応力)の発生を防止することができる。また接合部における導電性が低下することなく、電極２，６を安定して接続することができる。これにより、実装工程を簡素化できるとともに、リードタイムを数秒(たとえば１０秒以内)に短縮することが可能となり、信頼性の高い高品質な半導体実装を実現することができる。
【００２５】
また適切な温度と加圧力の付加により接合を行うため、熱硬化性樹脂の硬化を短時間で行え、かつ接合部に熱ストレスが発生するのを防止することができる。また接合部の電気抵抗値を適正にかつ安定して確保することができて、信頼性の高い半導体実装を実現することができる。
【００２６】
さらに上記実装装置によれば、熱硬化性樹脂供給用の転写台および熱硬化性樹脂を硬化させる第１，第２加熱装置２６，２９を有する作業装置２１を設けたことで、樹脂供給部２２における半導体素子１の電極２上に形成されたスタッドバンプ３への熱硬化性樹脂７の供給、実装部２３における半導体素子１のプリント回路基板５への設置、熱硬化性樹脂７の硬化が１台の装置で可能となり、実装工程を簡素化し、リードタイムを短縮することが可能となり、高品質な半導体実装を実現することができる。
【００２７】
(実施の形態２)
実施の形態２は、図３に示すように、実装時に熱硬化性樹脂７が半導体素子１の回路形成面およびプリント回路基板５の電極６周囲の回路形成面に広がるように、熱硬化性樹脂７の転写量を多くし、さらに荷重を制御することで、接合部の強度を大きく確保したものである。実施の形態２によれば、熱硬化性樹脂７の転写量を多くすることで、より高品質な半導体実装を実現することができる。
【００２８】
(実施の形態３)
実施の形態３は、図４に示すように、熱硬化性樹脂７を硬化して接合後、半導体素子１とプリント回路基板５の間にエポキシ樹脂等の補強剤１１を注入するもものである。この実施の形態３によれば、接合部の強度をより大きくして、さらに高品質な半導体実装を実現することができる。もちろん、補強剤１１のための加熱、硬化時間も必要となるが、熱履歴や硬化工程に要する時間も、従来に比較して半減させることができる。
（実施の形態４）
この実施の形態４は、先の実施の形態１に加えて、昇降ツール２５に超音波照射手段である超音波発振装置１２を設けて、実装時に接合部に超音波を所定範囲の照射量だけ供給するように構成したものである。この超音波発振装置１２から接合部に供給される超音波エネルギーは、スタッドバンプ１個当たり５０〜２００ｍＷの範囲に設定され、超音波エネルギーにより接合部の電極３(２)，６を溶融しない程度に加熱するとともに、昇降駆動装置により昇降ツール２５を介して塑性変形を生じない程度にスタッドバンプ３を加圧することで、接合面に生じる原子の拡散を利用してより強固に安定して電極３，６同士を拡散接合することができる。
【００２９】
ここで超音波エネルギーの照射範囲を、スタッドバンプ１個当たり５０〜２００ｍＷとしたのは、５０ｍＷ未満では拡散接合が不可能であり、また２００ｍＷを越えると、プリント回路基板５や熱硬化性樹脂７にクラックが発生して破損しやすくなるためである。
【００３０】
上記実施の形態４によれば、超音波発振装置１２から接合部に向かって超音波エネルギーを、接合部の電極３，６が溶融しない程度に供給加熱するとともに、塑性変形を生じない程度に加圧することにより、半導体素子１の電極２のスタッドバンプ３とプリント回路基板５の電極６の接合面に生じる原子の拡散を利用して電極同士を拡散接合することができ、より強固に安定して接合することができる。したがって、接合部への熱ストレスをより効果的に抑制すると共に、リードタイムを短縮して、さらに安定した高品質な半導体実装を実現することができる。
【００３１】
なお、上記実施の形態１で示した実装装置は、作業装置２１を樹脂供給部２２と実装部２３との間で移動するように構成したが、作業装置２１を固定しておき、樹脂供給部２２の転写台９と実装部２３の支持テーブル２８とを作業装置２１の対応位置に往復移動する形式のものでもよい。
【００３２】
【発明の効果】
以上のように請求項１記載の半導体実装方法によれば、導電性接着剤を用いず、熱硬化性樹脂を直接突起電極へ転写供給することで、温度付加工程を、熱硬化性樹脂の硬化に要する短時間とすることができて、接合部への熱ストレス(内部応力)を抑制し、接合部の導電性を低下させることなく実装工程を簡素化でき、リードタイムを短縮することが可能となるので、信頼性の高い高品質な半導体実装を実現することができる。
【００３３】
請求項２記載の半導体実装方法によれば、請求項１の作用効果に加えて、適切な温度と荷重の付加により接合を完了するため、熱硬化性樹脂の硬化反応を短時間で行えると共に、適正な加圧力でスタッドバンプと電極とを圧接接合するので、接合部における熱ストレスを抑制できて、接合部の導電性を安定して確保することができ、信頼性の高い半導体実装を実現することができる。
【００３４】
請求項３記載の半導体実装方法によれば、請求項２の作用効果に加えて、超音波エネルギーを付加し、接合部の電極を溶融しない程度に加熱して塑性変形を生じない程度に加圧することにより、接合面に生じる原子の拡散を利用して電極同士をより強固に安定した拡散接合することができる。したがって、接合部への熱ストレスを抑制して、さらに安定した高品質な半導体実装を実現することができる。
【００３５】
請求項４記載の半導体実装装置によれば、熱硬化性樹脂供給用の転写台および熱硬化性樹脂を硬化させる加熱手段を有する作業装置により、半導体素子の電極上に形成された突起電極への熱硬化性樹脂の供給、半導体素子のプリント回路基板への設置、熱硬化性樹脂の硬化が１台の装置で可能となり、実装工程を簡素化し、リードタイムを短縮することが可能となり、高品質な半導体実装を実現することができる。
【００３６】
請求項５記載の半導体実装装置によれば、超音波供給手段により超音波エネルギーを接合部に付加し、接合部の電極が溶融しない程度に加熱して塑性変形を生じない程度に加圧することで、接合面に生じる原子の拡散を利用してより強固に安定して電極同士を拡散接合することができる。したがって、接合部への熱ストレスを抑制して、さらに安定した高品質な半導体実装を実現することができる。
【図面の簡単な説明】
【図１】本発明に係る半導体実装装置による実装方法の実施の形態１を示し、(ａ)は樹脂供給作業の説明図、（ｂ）は実装作業を示す説明図である。
【図２】同半導体実装装置を示す構成図である。
【図３】本発明に係る実装方法の実施の形態２を示す実装作業の説明図である。
【図４】本発明に係る実装方法の実施の形態３を示す実装作業の説明図である。
【図５】本発明に係る実装方法および装置の実施の形態４を示す実装作業の説明図である。
【図６】従来の実装方法を示し、(ａ)は半導体素子の側面図、（ｂ）は樹脂供給作業を示す説明図、(ｃ)は実装作業を示す説明図、（ｄ）は補強作業を示す説明図である。
【符号の説明】
１ 半導体素子
２ 電極
３ スタッドバンプ
５ プリント回路基板
６ 電極
７ 熱硬化性樹脂
９ 熱硬化性樹脂の転写台
１１ 補強剤
２１ 作業装置
２２ 樹脂供給部
２３ 実装部
２５ 昇降ツール
２６ 第１加熱装置
２７ 保持プレート
２８ 支持テーブル
２９ 第２加熱装置[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor mounting method and apparatus for electrically joining a semiconductor element and a printed circuit board.
[0002]
[Prior art]
In recent years, along with demands for downsizing and weight reduction of electronic devices, downsizing of electronic components to be mounted has been demanded. As means for realizing this, surface-mounted electronic components without leads have been adopted instead of conventional electronic components with leads. Further, in order to further reduce the area occupied by electronic components, the progress of the semiconductor mounting field in which a semiconductor element is directly mounted on a printed circuit board instead of an IC package is remarkable.
[0003]
In semiconductor mounting, the surface on which the electrode part is formed is mounted on the substrate, the wire bonding method in which the electrode on the semiconductor element and the printed circuit board are connected with gold wire or aluminum wire, and the electrode surface is on the lower side There is a flip chip mounting method to be mounted.
[0004]
As shown in FIG. 6A, the latter flip-chip mounting method uses a semiconductor to obtain an electrical connection between the electrode 2 provided on the semiconductor element 1 and the electrode 6 provided on the printed circuit board 5. A protruding electrode (hereinafter referred to as a stud bump) 3 for bonding is formed on the electrode 2 formed on the surface of the element 1. After scan Taddobanpu formed, as shown in FIG. 6 (b), the forming surface of the stud bumps 3 of the semiconductor device 1 is lowered to the lower, the conductive film of the adhesive 4 provided on the transfer platform 8 Contact is made so that the central protrusion of the stud bump 3 is immersed. Next, when the semiconductor element 1 is pulled up, the conductive adhesive 4 is transferred to the stud bump 3 by surface tension.
[0005]
Next, as shown in FIG. 6C, the semiconductor element 1 is accurately positioned at a predetermined position on the printed circuit board 5 at room temperature so that the stud bump 3 comes into contact with the electrode 6 of the printed board 5. Then, the entire printed circuit board 5 is heated at an appropriate temperature to cure the conductive adhesive 4. After curing, the entire printed circuit board 5 is cooled to room temperature.
[0006]
Next, the entire printed circuit board 5 is again heated to an appropriate temperature, and a sealing resin 7 made of a thermosetting resin such as epoxy is injected between the semiconductor element 1 and the printed circuit board 5. After the injection, the entire printed circuit board 5 is heated to an appropriate temperature to cure the sealing resin 7. Thereby, the flip chip mounting method is completed.
[0007]
[Problems to be solved by the invention]
However, in the above conventional method, two thermal histories are added to cure the conductive adhesive at the junction between the electrode of the semiconductor element and the electrode of the printed circuit board and cure the injected sealing resin 7. End up. In addition, the adhesive strength of the conductive adhesive is very small.
[0008]
For this reason, thermal stress occurs due to heat applied to the joint between the semiconductor element and the printed circuit board in the two curing steps, and a crack is generated in the conductive adhesive at the joint, thereby impairing the electrical joint. was there.
[0009]
In addition, since the time required for the two curing steps is as long as about 1.5 to 6 hours, there is also a problem that quality feedback is slow.
Therefore, an object of the present invention is to provide a semiconductor mounting method and a semiconductor mounting apparatus that can solve the above-described problems.
[0010]
[Means for Solving the Problems]
In order to solve the above-described problems, the present invention provides an insulating material for electrode bonding only to a protruding electrode formed on an electrode of a semiconductor element when a semiconductor element is arranged on a printed circuit board and the respective electrodes are electrically connected to each other. transferring supplies sexual thermosetting resin is installed at a predetermined position of the printed circuit board which joined the electrodes to each other is cured by heating the thermosetting resin.
[0011]
According to the present invention, it is possible to minimize the temperature application step in the process, suppress the thermal stress on the joint, reduce the lead time, and realize high-quality semiconductor mounting. .
[0012]
DETAILED DESCRIPTION OF THE INVENTION
In the semiconductor mounting method according to the first aspect of the present invention, when the semiconductor element is arranged on the printed circuit board and the respective electrodes are electrically connected to each other, the electrode bonding is performed only to the protruding electrode formed on the electrode of the semiconductor element. an insulating thermosetting resin use was transferred supplying, in which was set at a predetermined position of the printed circuit board by heating the thermosetting resin to join the are not conductive poles curing. According to the above method, the thermosetting resin can be transferred and supplied directly to the protruding electrode without using a conductive adhesive, so that the temperature addition step can be made a short time required for curing the thermosetting resin. , Which suppresses thermal stress (internal stress) to the joint, simplifies the mounting process without reducing the conductivity of the joint, and shortens the lead time, resulting in high reliability and high quality Semiconductor mounting can be realized.
[0013]
According to a second aspect of the present invention, there is provided the semiconductor mounting method according to the first aspect, wherein when the semiconductor element is disposed on the printed circuit board, the electrode joint is heated to a predetermined temperature and a predetermined load is applied to press the electrodes together. To do. According to the above method, in addition to the effect of claim 1, since the joining is completed by applying an appropriate temperature and load, the curing reaction of the thermosetting resin can be performed in a short time and the stud can be applied with an appropriate pressure. Since the bump and the electrode are pressure-bonded and bonded, thermal stress at the bonded portion can be suppressed, the conductivity of the bonded portion can be secured stably, and highly reliable semiconductor mounting can be realized.
[0014]
According to a third aspect of the present invention, in the method of the second aspect, the ultrasonic energy is applied to the bonding portion to diffuse and bond the electrodes to each other. According to the above method, in addition to the operation and effect of claim 2, by applying ultrasonic energy, heating the electrode of the joint part to such an extent that it does not melt and pressurizing it to the extent that plastic deformation does not occur, It is possible to perform diffusion bonding more firmly and stably between the electrodes by utilizing the diffusion of the generated atoms. Therefore, it is possible to suppress the thermal stress on the joint and realize more stable and high-quality semiconductor mounting.
[0015]
Semiconductor mounting apparatus according to claim 4 is formed in the semiconductor mounting device for electrically connecting the respective electrodes to each other by installing a semiconductor element on a printed circuit board, the electrode is brought close to the rolling Utsushidai holding the semiconductor element An insulating thermosetting resin for electrode joining is transferred and supplied only to the projected electrodes, and a work device is provided in which this semiconductor element is placed at a predetermined position on the printed circuit board and the electrodes are pressed and joined together. The working device is provided with heating means for curing the thermosetting resin. According to the above configuration, the thermosetting resin is supplied to the protruding electrode formed on the electrode of the semiconductor element by the working device having the transfer table for supplying the thermosetting resin and the heating unit for curing the thermosetting resin. The installation of semiconductor elements on a printed circuit board and the curing of thermosetting resin can be done with a single device, which simplifies the mounting process and shortens the lead time, realizing high-quality semiconductor mounting. be able to.
[0016]
According to a fifth aspect of the present invention, in addition to the configuration according to the fourth aspect, an ultrasonic irradiation unit is provided that applies ultrasonic energy to the joint portion of the electrode to diffuse and bond the electrodes together. According to the above configuration, the ultrasonic energy is applied to the bonded portion by the ultrasonic irradiation means, heated to such an extent that the electrode of the bonded portion does not melt, and pressurized to such an extent that plastic deformation does not occur, whereby atoms generated on the bonded surface It is possible to diffuse and join the electrodes more firmly and stably by utilizing the diffusion of. Therefore, it is possible to suppress the thermal stress on the joint and realize more stable and high-quality semiconductor mounting.
[0017]
Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the same members as those in the conventional example are denoted by the same reference numerals and description thereof is omitted.
(Embodiment 1)
1 and 2 show a first embodiment of a semiconductor mounting method and apparatus according to the present invention.
[0018]
As shown in FIG. 2, the mounting apparatus includes a working device (also referred to as a working tool) 21 common to the resin supply unit 22 and the mounting unit 23. As shown in b), the resin supply unit 22 transfers and supplies the thermosetting resin 7 for electrode bonding to the stud bump 3 formed on the electrode 2 of the semiconductor element 1, and the mounting unit 23 prints the printed circuit board 5. The semiconductor element 1 is accurately positioned and arranged at a predetermined position (hereinafter referred to as mounting), and the electrode 3 of the semiconductor element 1 and the electrode 6 of the printed circuit board 5 are joined.
[0019]
The working device 21 is movably provided between a resin supply unit 22 and a mounting unit 23 via a guide device 24, and includes a lifting tool 25 that can be lifted and lowered by a built-in lifting drive device. . The elevating tool 25 includes a first heating device 26 that is a heating means, and a holding plate 27 that holds the semiconductor element 1 via a holding tool (not shown) on the lower surface. Can be pressurized.
[0020]
The thermosetting resin 7 is held on the transfer table 9 in the resin supply unit 22. The mounting unit 23 includes a support table 28 that supports the printed circuit board 5 and a second heating device 29 that is a second heating unit.
[0021]
A mounting method by the mounting apparatus having the above configuration will be described with reference to FIG.
In the resin supply unit 21 , the electrode 2 to which the semiconductor element 1 is bonded is held by the elevating tool 25 via the holding plate 27 so as to be the lower surface. Then, the elevating tool 25 is lowered, and the thermosetting resin 7 is transferred and supplied to the stud bump 3 formed on the electrode 2 of the semiconductor element 1. Then, the working device 21 is moved to the mounting portion 23, and the semiconductor element 1 is accurately positioned at the bonding position corresponding to the printed circuit board 5 held on the support table 28. Next, the lifting tool 25 is lowered, the stud bump 3 is pressed against the electrode 6 of the printed circuit board 5 with a predetermined pressure, the thermosetting resin 7 is cured, and the mounting is completed.
[0022]
During this joining, the first heating device 26 and the second heating device 29 heat both the electrodes 2 and 6 and the thermosetting resin 7 to be joined to a predetermined temperature range of 180 ° C. to 250 ° C. Thereby, the thermosetting resin 7 is cured and bonded in a short time (for example, within 10 seconds), and internal stress is not generated in the semiconductor element 1 and the printed circuit board 5. Here, the reason why the heating temperature of the bonded portion is set in the range of 180 ° C. to 250 ° C. is that when the temperature is less than 180 ° C., the curing reaction of the thermosetting resin 7 is slow and requires a long time for curing. This is because if it exceeds, internal stress may be generated in the semiconductor element 1 and the electrical resistance value of the joint may increase.
[0023]
Further, a pressure (load) of 196 to 784 N (20 to 80 kgf) is applied to the joint portion by the lifting drive device via the lifting tool 25. Thereby, since the area which the stud bump 3 and the electrode 6 contact is stably ensured in these joining parts, the dispersion | variation in the electrical resistance value of a joining part is suppressed, and stable joining can be performed. Here, the pressure applied at the time of joining is in the range of 196 to 784 N per stud bump. If it is less than 196 N, the contact area between the electrodes 2 (3) and 6 is insufficient and the electric resistance is high. This is because the contact area varies and the electrical resistance value changes, and the quality of the joint is not stable. When the value exceeds 784 N, the gap between the printed circuit board 5 and the semiconductor element 1 becomes narrower and the reliability is increased. This is because of a decrease.
[0024]
According to the first embodiment, the time required for the curing and joining with the thermosetting resin can be greatly shortened by transferring and supplying the thermosetting resin 7 directly to the stud bump 3 without using the conductive adhesive. Thus, the occurrence of thermal stress (internal stress) of the semiconductor element 1 and the printed circuit board 5 can be prevented. In addition, the electrodes 2 and 6 can be stably connected without lowering the conductivity at the joint. As a result, the mounting process can be simplified and the lead time can be shortened to a few seconds (for example, within 10 seconds), and a highly reliable and high-quality semiconductor mounting can be realized.
[0025]
In addition, since the bonding is performed by applying an appropriate temperature and pressure, the thermosetting resin can be cured in a short time, and thermal stress can be prevented from occurring at the bonded portion. In addition, the electrical resistance value of the junction can be ensured appropriately and stably, and a highly reliable semiconductor mounting can be realized.
[0026]
Furthermore, according to the mounting device, the resin supply unit 22 is provided by providing the transfer device for supplying the thermosetting resin and the working device 21 having the first and second heating devices 26 and 29 for curing the thermosetting resin. The supply of the thermosetting resin 7 to the stud bump 3 formed on the electrode 2 of the semiconductor element 1 in FIG. 1, the installation of the semiconductor element 1 on the printed circuit board 5 in the mounting portion 23 , and the curing of the thermosetting resin 7 are 1 This is possible with a single device, simplifies the mounting process, shortens the lead time, and realizes high-quality semiconductor mounting.
[0027]
(Embodiment 2)
In the second embodiment, as shown in FIG. 3, the thermosetting resin 7 spreads over the circuit forming surface of the semiconductor element 1 and the circuit forming surface around the electrodes 6 of the printed circuit board 5 at the time of mounting. By increasing the transfer amount of No. 7 and further controlling the load, the strength of the joint portion is ensured to be large. According to the second embodiment, a higher quality semiconductor mounting can be realized by increasing the transfer amount of the thermosetting resin 7.
[0028]
(Embodiment 3)
In the third embodiment, as shown in FIG. 4, after the thermosetting resin 7 is cured and bonded, a reinforcing agent 11 such as an epoxy resin is injected between the semiconductor element 1 and the printed circuit board 5. . According to the third embodiment, it is possible to increase the strength of the joint and realize higher-quality semiconductor mounting. Of course, heating and curing time for the reinforcing agent 11 are also required, but the heat history and the time required for the curing process can also be halved compared to the prior art.
(Embodiment 4)
In the fourth embodiment, in addition to the first embodiment, the lifting tool 25 is provided with the ultrasonic oscillation device 12 that is an ultrasonic irradiation means, and ultrasonic waves are applied to the joint at a predetermined range during the mounting. It is comprised so that it may supply. The ultrasonic energy supplied from the ultrasonic oscillator 12 to the joint is set in the range of 50 to 200 mW per stud bump, and the ultrasonic energy does not melt the electrodes 3 (2) and 6 at the joint. The stud bump 3 is pressurized to the extent that plastic deformation does not occur through the lifting tool 25 by the lifting drive device, and the electrode 3 is more firmly and stably utilized by utilizing the diffusion of atoms generated on the joint surface. , 6 can be diffusion bonded together.
[0029]
Here, the irradiation range of the ultrasonic energy is set to 50 to 200 mW per stud bump. If less than 50 mW, diffusion bonding is impossible, and if it exceeds 200 mW, the printed circuit board 5 and the thermosetting resin 7 are used. This is because cracks are likely to occur and are easily damaged.
[0030]
According to the fourth embodiment, the ultrasonic energy is supplied and heated from the ultrasonic oscillator 12 toward the bonded portion to such an extent that the electrodes 3 and 6 of the bonded portion do not melt, and is applied to the extent that plastic deformation does not occur. By applying pressure, the electrodes can be diffused and bonded by utilizing the diffusion of atoms generated on the bonding surfaces of the stud bumps 3 of the electrodes 2 of the semiconductor element 1 and the electrodes 6 of the printed circuit board 5, and more firmly and stably. Can be joined. Therefore, it is possible to more effectively suppress the thermal stress on the joint portion, shorten the lead time, and realize more stable and high-quality semiconductor mounting.
[0031]
Although the mounting apparatus shown in the first embodiment is configured to move the work device 21 between the resin supply unit 22 and the mounting unit 23, the work device 21 is fixed and the resin supply unit is fixed. The transfer table 9 of 22 and the support table 28 of the mounting portion 23 may be reciprocated to the corresponding position of the work device 21.
[0032]
【The invention's effect】
As described above, according to the semiconductor mounting method of the first aspect, the thermosetting resin is cured by directly supplying the thermosetting resin to the protruding electrodes without using the conductive adhesive. It is possible to shorten the lead time by reducing the thermal stress (internal stress) to the joint, simplifying the mounting process without lowering the conductivity of the joint. Therefore, highly reliable and high quality semiconductor mounting can be realized.
[0033]
According to the semiconductor mounting method of claim 2, in addition to the effects of claim 1, in order to complete the joining by adding an appropriate temperature and load, the curing reaction of the thermosetting resin can be performed in a short time, Since the stud bump and the electrode are pressure-bonded with an appropriate pressure, thermal stress at the joint can be suppressed, the conductivity of the joint can be secured stably, and a highly reliable semiconductor mounting is realized. be able to.
[0034]
According to the semiconductor mounting method of the third aspect, in addition to the function and effect of the second aspect, ultrasonic energy is applied, and the electrodes at the joint are heated to such an extent that they do not melt and are pressurized to the extent that plastic deformation does not occur. Thus, the electrodes can be more firmly and stably diffusion-bonded using the diffusion of atoms generated on the bonding surface. Therefore, it is possible to suppress the thermal stress on the joint and realize more stable and high-quality semiconductor mounting.
[0035]
According to the semiconductor mounting apparatus of claim 4, the working device having the transfer table for supplying the thermosetting resin and the heating unit for curing the thermosetting resin is used to apply the protrusion to the protruding electrode formed on the electrode of the semiconductor element. High quality because it is possible to supply thermosetting resin, place semiconductor elements on printed circuit boards, and cure thermosetting resin with a single device, simplify the mounting process and shorten the lead time. Semiconductor mounting can be realized.
[0036]
According to the semiconductor mounting apparatus of the fifth aspect, the ultrasonic energy is applied to the joint portion by the ultrasonic supply means, and heated to such an extent that the electrode of the joint portion is not melted and pressurized so as not to cause plastic deformation. The electrodes can be diffusion-bonded more firmly and stably by utilizing the diffusion of atoms generated on the bonding surface. Therefore, it is possible to suppress the thermal stress on the joint and realize a more stable and high-quality semiconductor mounting.
[Brief description of the drawings]
1A and 1B show a first embodiment of a mounting method using a semiconductor mounting apparatus according to the present invention, in which FIG. 1A is an explanatory view of a resin supply operation, and FIG. 1B is an explanatory view showing a mounting operation;
FIG. 2 is a configuration diagram showing the semiconductor mounting apparatus.
FIG. 3 is an explanatory diagram of a mounting operation showing a second embodiment of the mounting method according to the present invention.
FIG. 4 is an explanatory diagram of a mounting operation showing Embodiment 3 of the mounting method according to the present invention.
FIG. 5 is an explanatory diagram of a mounting operation showing Embodiment 4 of the mounting method and apparatus according to the present invention.
6A and 6B show a conventional mounting method, where FIG. 6A is a side view of a semiconductor element, FIG. 6B is an explanatory diagram showing a resin supply operation, FIG. 6C is an explanatory diagram showing a mounting operation, and FIG. It is explanatory drawing which shows.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Electrode 3 Stud bump 5 Printed circuit board 6 Electrode 7 Thermosetting resin 9 Thermosetting resin transfer stand 11 Reinforcing agent 21 Work device 22 Resin supply part 23 Mounting part 25 Lifting tool 26 First heating device 27 Holding Plate 28 Support table 29 Second heating device

Claims (5)

半導体素子をプリント回路基板に配置してそれぞれの電極同士を電気的に接続するに際して、
半導体素子の電極に形成された突起電極にのみ電極接合用の絶縁性の熱硬化性樹脂を転写供給し、
プリント回路基板の所定の位置に設置し前記熱硬化性樹脂を加熱して硬化させ電極同士を接合する
ことを特徴とする半導体実装方法。When placing each semiconductor element on a printed circuit board and electrically connecting each electrode,
Transfer and supply an insulating thermosetting resin for electrode bonding only to the protruding electrodes formed on the electrodes of the semiconductor element,
A semiconductor mounting method, comprising: installing at a predetermined position of a printed circuit board, heating and curing the thermosetting resin, and bonding electrodes together. 半導体素子をプリント回路基板に配置した時に、電極の接合部を所定温度に加熱するとともに、所定荷重を付加して電極同士を圧接する
ことを特徴とする請求項１記載の半導体実装方法。The semiconductor mounting method according to claim 1, wherein when the semiconductor element is disposed on the printed circuit board, the electrode joint is heated to a predetermined temperature and a predetermined load is applied to press the electrodes together. 接合部に超音波エネルギーを付加して電極同士を拡散接合する
ことを特徴とする請求項２記載の半導体実装方法。The semiconductor mounting method according to claim 2, wherein ultrasonic energy is applied to the joint and the electrodes are diffusion-bonded together. 半導体素子をプリント回路基板に設置してそれぞれの電極同士を電気的に接続する半導体実装装置において、
半導体素子を保持して転写台に接近させ電極に形成された突起電極にのみ電極接合用の絶縁性の熱硬化性樹脂を転写供給するとともに、この半導体素子をプリント回路基板上の所定位置に配置して電極同士を圧接し接合する作業装置を設け、
前記作業装置に、熱硬化性樹脂を硬化させる加熱手段を設けた
ことを特徴とする半導体実装装置。In a semiconductor mounting apparatus in which a semiconductor element is installed on a printed circuit board and each electrode is electrically connected to each other,
Thereby transferring supplies insulating thermosetting resin for electrode bonding only the protruding electrodes formed on the electrode is brought close to the rolling Utsushidai holding the semiconductor element, the semiconductor element at a predetermined position on the printed circuit board Provide a working device to arrange and press-contact the electrodes together,
A semiconductor mounting device, wherein the working device is provided with heating means for curing the thermosetting resin. 電極の接合部に超音波エネルギーを付加して電極同士を拡散接合する超音波照射手段を設けた
ことを特徴とする請求項４記載の半導体実装装置。The semiconductor mounting apparatus according to claim 4, further comprising: an ultrasonic irradiation unit that applies ultrasonic energy to a bonding portion of the electrodes to diffuse and bond the electrodes to each other.
JP2000338415A 2000-11-07 2000-11-07 Semiconductor mounting method and semiconductor mounting apparatus Expired - Fee Related JP4289779B2 (en)

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