JP4251945B2 - 液晶表示装置用アレイ基板の製造方法 - Google Patents
液晶表示装置用アレイ基板の製造方法 Download PDFInfo
- Publication number
- JP4251945B2 JP4251945B2 JP2003314416A JP2003314416A JP4251945B2 JP 4251945 B2 JP4251945 B2 JP 4251945B2 JP 2003314416 A JP2003314416 A JP 2003314416A JP 2003314416 A JP2003314416 A JP 2003314416A JP 4251945 B2 JP4251945 B2 JP 4251945B2
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- Prior art keywords
- layer
- copper
- gate
- electrode
- liquid crystal
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- 239000000758 substrate Substances 0.000 title claims description 67
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title description 27
- 239000010949 copper Substances 0.000 claims description 50
- 229910052802 copper Inorganic materials 0.000 claims description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 44
- 239000005749 Copper compound Substances 0.000 claims description 29
- 150000001880 copper compounds Chemical class 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- -1 copper nitride compound Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 110
- 229910052751 metal Inorganic materials 0.000 description 45
- 239000002184 metal Substances 0.000 description 45
- 239000010408 film Substances 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
Claims (3)
- 反応チャンバー内で銅と化学的に結合することができるNH3またはN2が流れる状態で、基板上に銅化合物層を形成する段階と、
アルゴンガス雰囲気で、前記銅化合物層上に銅層を形成する段階と、 側面が連続した傾斜面を有するように、前記銅化合物層と銅層をエッチングして銅層の上面の幅が銅化合物層の上面の幅より短いゲート配線及びゲート電極を形成する段階と、
前記ゲート配線及び前記ゲート電極の上部に、前記銅層と接触するゲート絶縁膜を形成する段階と、
前記ゲート絶縁膜上にアクティブ層及びオーミックコンタクト層を形成する段階と、
前記アクティブ層及び前記オーミックコンタクト層を含む前記基板上に、窒化銅化合物層及び銅層を順次形成して、前記銅化合物層及び前記銅層をエッチングしてデータ配線とソース電極及びドレイン電極を形成する段階と、
前記ドレイン電極に連結された画素電極を形成する段階と
を含み、
前記ゲート電極及び前記ゲート配線の前記銅化合物層は、前記ゲート電極及び前記ゲート配線の前記銅層が前記基板から浮き上がる不良を防止し、前記データ配線と前記ソース電極及び前記ドレイン電極の前記銅化合物層は、前記データ配線と前記ソース電極及び前記ドレイン電極の前記銅層が前記オーミックコンタクト層のシリコン成分と反応することを防止する
ことを特徴とする液晶表示装置用アレイ基板の製造方法。 - 前記ゲート絶縁膜は、シリコンを含むことを特徴とする請求項1に記載の液晶表示装置用アレイ基板の製造方法。
- 前記ゲート絶縁膜は、窒化シリコンと酸化シリコンのいずれかであることを特徴とする請求項2に記載の液晶表示装置用アレイ基板の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020088412A KR100904524B1 (ko) | 2002-12-31 | 2002-12-31 | 액정표시장치용 어레이기판 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004212940A JP2004212940A (ja) | 2004-07-29 |
JP4251945B2 true JP4251945B2 (ja) | 2009-04-08 |
Family
ID=32653278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003314416A Expired - Lifetime JP4251945B2 (ja) | 2002-12-31 | 2003-09-05 | 液晶表示装置用アレイ基板の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8027007B2 (ja) |
JP (1) | JP4251945B2 (ja) |
KR (1) | KR100904524B1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101054344B1 (ko) | 2004-11-17 | 2011-08-04 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
TWI273329B (en) * | 2004-12-29 | 2007-02-11 | Au Optronics Corp | Copper gate electrode of liquid crystal display device and method of fabricating the same |
KR101168728B1 (ko) * | 2005-07-15 | 2012-07-26 | 삼성전자주식회사 | 배선 구조와 배선 형성 방법 및 박막 트랜지스터 기판과 그제조 방법 |
KR101043508B1 (ko) | 2006-10-13 | 2011-06-23 | 가부시키가이샤 고베 세이코쇼 | 박막 트랜지스터 기판 및 표시 디바이스 |
TW200822232A (en) * | 2006-11-06 | 2008-05-16 | Chunghwa Picture Tubes Ltd | Thin film transistor and fabrication method thereof |
JP4355743B2 (ja) | 2006-12-04 | 2009-11-04 | 株式会社神戸製鋼所 | Cu合金配線膜とそのCu合金配線膜を用いたフラットパネルディスプレイ用TFT素子、及びそのCu合金配線膜を作製するためのCu合金スパッタリングターゲット |
KR101421243B1 (ko) * | 2006-12-21 | 2014-07-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
JP2009004518A (ja) | 2007-06-20 | 2009-01-08 | Kobe Steel Ltd | 薄膜トランジスタ基板、および表示デバイス |
JP5584436B2 (ja) | 2008-07-03 | 2014-09-03 | 株式会社神戸製鋼所 | 薄膜トランジスタ基板の製造方法 |
JP5179669B2 (ja) * | 2009-08-20 | 2013-04-10 | シャープ株式会社 | 表示装置 |
JP5580619B2 (ja) * | 2010-02-19 | 2014-08-27 | 株式会社神戸製鋼所 | 薄膜トランジスタ基板および表示デバイス |
JP2011222567A (ja) | 2010-04-02 | 2011-11-04 | Kobe Steel Ltd | 配線構造、表示装置、および半導体装置 |
JP2012027159A (ja) | 2010-07-21 | 2012-02-09 | Kobe Steel Ltd | 表示装置 |
CN105679768B (zh) * | 2016-01-25 | 2019-07-12 | 武汉华星光电技术有限公司 | 阵列基板、液晶显示面板及液晶显示装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3200638B2 (ja) | 1992-02-13 | 2001-08-20 | カシオ計算機株式会社 | 配線形成方法 |
JP2551724B2 (ja) | 1993-03-04 | 1996-11-06 | 株式会社高度映像技術研究所 | 薄膜半導体装置およびその製造方法 |
JP3209317B2 (ja) * | 1995-10-31 | 2001-09-17 | シャープ株式会社 | 透過型液晶表示装置およびその製造方法 |
JPH10133597A (ja) | 1996-07-26 | 1998-05-22 | Canon Inc | 配線基板、該配線基板の製造方法、該配線基板を備えた液晶素子及び該液晶素子の製造方法 |
US6219125B1 (en) * | 1996-07-26 | 2001-04-17 | Canon Kabushiki Kaisha | Electrode plate, process for producing the plate, for an LCD having a laminated electrode with a metal nitride layer |
KR100271037B1 (ko) * | 1997-09-05 | 2000-11-01 | 구본준, 론 위라하디락사 | 액정 표시 장치의 구조 및 그 액정 표시 장치의 제조 방법(liquid crystal display device and the method for manufacturing the same) |
JP4663829B2 (ja) * | 1998-03-31 | 2011-04-06 | 三菱電機株式会社 | 薄膜トランジスタおよび該薄膜トランジスタを用いた液晶表示装置 |
JP2000165002A (ja) * | 1998-11-26 | 2000-06-16 | Furontekku:Kk | 電子機器用基板及びその製造方法と電子機器 |
KR100303141B1 (ko) * | 1999-02-23 | 2001-09-26 | 구본준, 론 위라하디락사 | 박막트랜지스터의 제조방법 |
JP4169896B2 (ja) * | 1999-06-23 | 2008-10-22 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタとその製造方法 |
JP2001281698A (ja) * | 2000-03-30 | 2001-10-10 | Advanced Display Inc | 電気光学素子の製法 |
KR100843472B1 (ko) * | 2001-03-20 | 2008-07-03 | 엘지디스플레이 주식회사 | 액정표시장치 및 그의 제조방법 |
KR100433805B1 (ko) * | 2001-10-11 | 2004-06-02 | 엘지.필립스 엘시디 주식회사 | 반사투과형 액정표시장치용 어레이기판과 그 제조방법 |
KR100412619B1 (ko) * | 2001-12-27 | 2003-12-31 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판의 제조 방법 |
KR100456373B1 (ko) * | 2001-12-31 | 2004-11-09 | 엘지.필립스 엘시디 주식회사 | 구리 또는 구리/티타늄 식각액 |
-
2002
- 2002-12-31 KR KR1020020088412A patent/KR100904524B1/ko active IP Right Grant
-
2003
- 2003-09-05 JP JP2003314416A patent/JP4251945B2/ja not_active Expired - Lifetime
- 2003-11-13 US US10/705,914 patent/US8027007B2/en active Active
-
2011
- 2011-08-23 US US13/215,958 patent/US8848125B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100904524B1 (ko) | 2009-06-25 |
KR20040062090A (ko) | 2004-07-07 |
US8848125B2 (en) | 2014-09-30 |
US20110303920A1 (en) | 2011-12-15 |
US20040125257A1 (en) | 2004-07-01 |
US8027007B2 (en) | 2011-09-27 |
JP2004212940A (ja) | 2004-07-29 |
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