JP4246828B2 - Masking device in vacuum evaporation system - Google Patents

Masking device in vacuum evaporation system Download PDF

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Publication number
JP4246828B2
JP4246828B2 JP00184499A JP184499A JP4246828B2 JP 4246828 B2 JP4246828 B2 JP 4246828B2 JP 00184499 A JP00184499 A JP 00184499A JP 184499 A JP184499 A JP 184499A JP 4246828 B2 JP4246828 B2 JP 4246828B2
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Prior art keywords
mask
glass substrate
carrier
masking
film
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JP00184499A
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JP2000199046A (en
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稔 藤井
隆一 寺島
裕之 平野
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Ulvac Inc
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Ulvac Inc
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Description

【０００１】
【発明の属する技術分野】
本発明は、真空蒸着装置により、ガラス基板に成膜材料を蒸着する際、成膜を必要としない箇所を被覆するマスキング装置に関する。
【０００２】
【従来の技術】
近年、大画面の壁掛けテレビへの実用化に向け、プラズマディスプレイパネル（ＰＤＰ）が注目を集めているが、このパネル用として、ガラス基板上に保護膜としてＭｇＯ成膜を形成することが行われている。また、このプラズマディスプレイパネルの成膜に限らず、基板上に皮膜を形成させることは、種々の分野に適用されている。この成膜に際しては、ガラス基板は成膜室内で窓の開いた枠状のキャリアに搭載されて搬送されるが、キャリアには、セラミック材料からなる基板受けが設けられており、この基板受けがガラス基板と接触するように構成されている。
また、ガラス基板の一部をマスクで被覆するマスク成膜を行うことがあるが、この場合、薄いマスクでガラス基板の所定箇所を被覆する。
【０００３】
【発明が解決しようとする課題】
しかし、特にＰＤＰに用いるようなソーダライムガラスやホウケイ酸ガラス等のガラス基板は、厚さ２〜３ｍｍ、大きさは１０５０×６５０ｍｍと畳１畳分の大きさのものすらあり、成膜室内での蒸着熱による熱変形が大きい。従って、ガラス基板にマスク成膜する場合、ガラス基板の変形に追随してマスクも変形しないと、ガラス基板との接触箇所で、応力が発生して基板割れが生じたり、またガラス基板とマスクとの隙間が部分的に広くなりすぎて、成膜材料がマスク部分にも回り込んで十分な被覆ができないという問題がある。
【０００４】
そこで本発明は、成膜時における基板の割れを防止するとともに、成膜材料のマスキング部分への回り込みを防止することのできる真空蒸着装置におけるマスキング装置を提供することを目的とする。
【０００５】
【課題を解決するための手段】
請求項１記載の本発明の真空蒸着装置におけるマスキング装置は、キャリアに設けた基板受け上に載置したガラス基板の所望箇所を被覆するマスクを有するマスキング装置であって、前記マスクを前記ガラス基板と熱膨張率が近い材料で形成し、前記マスクの少なくとも一端と前記キャリアとの間に、ばねを架設し、前記マスクの熱変形時のだれを防止するために前記マスクの蒸着面側に角パイプを設け、前記マスクを前記ガラス基板と接触させて成膜することを特徴とする。
請求項２記載の本発明の真空蒸着装置におけるマスキング装置は、キャリアに設けた基板受け上に載置したガラス基板の所望箇所を被覆するマスクを有するマスキング装置であって、前記マスクを前記ガラス基板と熱膨張率が近い材料で形成するとともに、前記マスクの少なくとも一端と前記キャリアとの間にばねを架設し、前記マスクの熱変形時のだれを防止するために前記マスクの蒸着面側に角パイプを設け、前記マスクと前記ガラス基板とを接触させずに成膜することを特徴とする。
請求項３記載の本発明は、請求項１又は２に記載の真空蒸着装置におけるマスキング装置において、前記マスクを構成する材料として、ニッケル鉄合金を用いたことを特徴とする。
【０００６】
【発明の実施の形態】
本発明の実施の形態は、マスクをガラス基板と熱膨張率が近い材料で形成し、マスクをガラス基板と接触させて成膜するものである。本実施の形態によれば、マスクはガラス基板の熱変形による撓みと同様に撓むため、マスクとガラス基板との接触面での応力の発生を極めて小さくでき、基板割れの発生を防止することができる。また本実施の形態によれば、成膜材料がマスク部分に回り込むという問題も生じない。
【０００７】
本発明の実施の形態は、上記実施の形態において、マスクの少なくとも一端とキャリアとの間にばねを架設したものである。このようにマスクの少なくとも一端をばねによってテンションを加えることで、マスクだけが熱だれを生じてもこのばねによるテンションによって、密着性を高めるとともに、ガラス基板とマスクとの接触面での応力の発生を防止することができる。
【０００８】
本発明の実施の形態は、マスクをガラス基板と熱膨張率が近い材料で形成するとともに、マスクの少なくとも一端とキャリアとの間にばねを架設し、マスクとガラス基板とを接触させずに成膜するものである。本実施の形態によれば、マスクはガラス基板の熱変形による撓みと同様に撓むとともに、マスクの少なくとも一端をばねによってテンションを加えることで、マスクとガラス基板との隙間寸法を一定に保つことができる。従って、ガラス基板とマスクとの接触を防止することができるとともに、部分的に成膜材料がマスク部分に大きく回り込むという問題も生じない。
【０００９】
本発明の実施の形態は、上記実施の形態におけるマスクを構成する材料として、ニッケル鉄合金を用いたものである。このニッケル鉄合金は一般にガラス封着用として使用されるもので、例えばガラス基板としてホウケイ酸ガラス（熱膨張率３２〜４９×１０−７・Ｋ−１）を用いた場合、マスク材として４２％ニッケル鉄合金（Ｎｉ４２％、Ｆｅ残部、熱膨張率４０〜４７×１０−７・Ｋ−１）を用いることによって、ガラス基板とマスクとの熱膨張率が近いため、基板割れや、成膜材料の回り込みをより有効に防止することができる。
【００１０】
【実施例】
以下本発明の一実施例の真空蒸着装置におけるマスキング装置を図面に基づいて説明する。
まず、図１を用いて本発明のマスキング装置を適用する真空蒸着装置を説明する。図１は、同真空蒸着装置の一実施例を示す縦断面図である。
図１に示すように成膜室１は、室内を真空に保つための真空ポンプ２を備えている。成膜室１内において、ガラス基板３は、キャリア４に搭載され、一定の速度で成膜室１内を移動する。５はリングハース、６はリングハース５を搭載したターンテーブル、７はリングハース５上に載置された成膜材料、８は成膜室１に設けた電子ビームガンである。
【００１１】
リングハース５上に載置された成膜材料７は、成膜室１に設置された電子ビームガン８から放射される電子ビームにより加熱されて蒸発する。ガラス基板３は、窓が開いた枠状のキャリア４に搭載されて成膜室１内を搬送される。ガラス基板３は、この搬送時に蒸発した成膜材料７が表面に付着して蒸着が行われる。
【００１２】
以下、本発明の一実施例によるマスキング装置を説明する。
図２は同マスキング装置を示す平面図、図３は同側面図、図４はマスクとばねの構成を示す要部拡大平面図である。
図２から図４において、枠状に構成されたキャリア４の内周部には、セラミック材料でできた窓枠状の基板受け９を設けている。ホウケイ酸ガラスの基板３は、この基板受け９に載置される。この基板受け９の下面、すなわち成膜室１内において蒸着面となる側には、帯状に形成されたマスク１０を設けている。
このマスク１０の材料としては、ニッケル系の合金である４２％ニッケル鉄合金を使用している。このとき、このマスク１０の熱膨張率は４０〜４７×１０−７・Ｋ−１であり、基板として用いられるホウケイ酸ガラスの熱膨張率である３２〜４９×１０−７・Ｋ−１に近い値である。マスク１０の厚さは０．２５ｍｍ程度である。マスク１０は、ガラス基板３のマスキングを必要とする所望箇所に対応させ、ガラス基板３を載置したときにガラス基板３と接触するように配設する。
マスク１０の両端部には、ばね１１が設けられており、マスク１０を牽引するためにキャリア４との間に架設し、テンションを加えている。なお、ばね１１はいずれか一端に設けるものであってもよい。
【００１３】
上記実施例におけるマスキング装置の成膜時の作用について以下に説明する。図１に示すような成膜時には、ガラス基板３およびマスク１０は、蒸着熱やガラス基板の温度を均一に保つために設けられたヒータ（図示せず）により加熱される。従って、ガラス基板３およびマスク１０の温度は、次第に上昇して熱変形するが、マスク１０の熱膨張率をガラス基板３の熱膨張率に近づけており、しかもマスク１０をばね１１で牽引してマスク１０にテンションをかけているので、マスク１０はガラス基板３の変形に追随して変形する。すなわち、マスク１０のみが熱膨張して、ガラス基板３との密着性が悪くなることはない。その結果、ガラス基板３とマスク１０との接触箇所に部分的に不均一な応力がかかってガラス基板３が割れたり、あるいはガラス基板３とマスク１０との間に熱だれにより隙間を生じ、成膜材料７が回り込むことがない。
【００１４】
以下、本発明の他の実施例によるマスキング装置を説明する。
図５は同マスキング装置を示す平面図、図６はマスクとばねの構成を示す要部拡大平面図である。上記実施例と同一機能を有する部材には同一番号を付して説明を省略する。
本実施例は、長辺側のマスク１０Ａを幅広のものとし、ガラス基板の中央部分にもマスク１０Ｂを設けたものである。この場合、マスク１０Ａは片側からのみ牽引するようにばね１１を設けている。マスク１０Ａのように幅広のものでは、その自重が大きくなるため、マスク１０Ａを両側から牽引してテンションをかけると、だれを生じるおそれがあるためである。また、本実施例においては、マスク１０、１０Ａ、１０Ｂの下方、すなわち蒸着面側にマスク１０、１０Ａ、１０Ｂと所定の隙間を設けて角パイプ１２を設置している。この角パイプ１２は、マスク１０、１０Ａ、１０Ｂの熱変形時の大きなだれを防止するものである。さらに、本実施例においては、マスク１０、１０Ａ、１０Ｂとガラス基板３とを、ガラス基板４とマスク３とが熱膨張した場合でも非接触となるように配設している。
【００１５】
上記実施例におけるマスキング装置の成膜時の作用について以下に説明する。
図１に示すような成膜時には、ガラス基板３およびマスク１０、１０Ａ、１０Ｂは、蒸着熱やガラス基板の温度を均一に保つために設けられたヒータ（図示せず）により加熱される。従って、ガラス基板３およびマスク１０、１０Ａ、１０Ｂの温度は、次第に上昇して熱変形するが、マスク１０、１０Ａ、１０Ｂの熱膨張率をガラス基板３の熱膨張率に近づけており、しかもマスク１０、１０Ａ、１０Ｂをばね１１で牽引してテンションをかけているので、マスク１０、１０Ａ、１０Ｂはガラス基板３の変形と同様に変形する。また、本実施例にあっては、さらに角パイプ１２によってマスク、１０Ａ、１０Ｂを下方から支えているのでより大きく変形を生じた場合には、特に中央部の変形を押さえ、ガラス基板３から離れることを防止することができる。
以上のように、本実施例によれば、マスク１０、１０Ａ、１０Ｂのみが熱膨張して、ガラス基板３と大きな隙間を生じることはなく、成膜材料７が回り込むことがない。
【００１６】
【発明の効果】
以上，説明したように、本発明においては、ガラス基板の一部を被覆して蒸着による成膜を行う場合、ガラス基板の割れ、あるいは成膜材料の回り込み等を防止することができ、成膜処理を確実に行うことができる等、その効果は極めて大きい。
【図面の簡単な説明】
【図１】本発明の一実施例を示す真空蒸着装置の縦断面図
【図２】本発明の一実施例を示すマスキング装置の平面図
【図３】同装置の側面図
【図４】同装置のマスクとばねの構成を示す要部拡大平面図
【図５】本発明の他の実施例を示すマスキング装置の平面図
【図６】同装置のマスクとばねの構成を示す要部拡大平面図
【符号の説明】
３ ガラス基板
４ キャリア
９ 基板受け
１０ マスク
１０Ａ マスク
１０Ｂ マスク
１１ ばね[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a masking apparatus that covers a portion that does not require film formation when a film forming material is vapor-deposited on a glass substrate by a vacuum evaporation apparatus.
[0002]
[Prior art]
In recent years, plasma display panels (PDPs) have attracted attention for practical use in large-screen wall-mounted televisions. For this panel, an MgO film is formed as a protective film on a glass substrate. ing. Further, not only the film formation of the plasma display panel but also the formation of a film on the substrate is applied in various fields. In this film formation, the glass substrate is mounted on a frame-shaped carrier having an open window in the film formation chamber and is transported, and the carrier is provided with a substrate receiver made of a ceramic material. It is comprised so that it may contact with a glass substrate.
In some cases, a mask film is formed to cover a part of the glass substrate with a mask. In this case, a predetermined portion of the glass substrate is covered with a thin mask.
[0003]
[Problems to be solved by the invention]
However, glass substrates such as soda lime glass and borosilicate glass, particularly used for PDPs, have a thickness of 2 to 3 mm and a size of 1050 × 650 mm, even a size of one tatami mat, and even in the film forming chamber. The thermal deformation due to the evaporation heat is large. Therefore, when a mask is formed on a glass substrate, if the mask is not deformed following the deformation of the glass substrate, stress is generated at the contact point with the glass substrate, and the substrate is cracked. There is a problem in that the gap is too wide and the film-forming material also wraps around the mask portion and cannot be sufficiently covered.
[0004]
Therefore, an object of the present invention is to provide a masking device in a vacuum deposition apparatus that can prevent a substrate from cracking during film formation and prevent a film forming material from entering a masking portion.
[0005]
[Means for Solving the Problems]
The masking apparatus in the vacuum vapor deposition apparatus of the present invention according to claim 1 is a masking apparatus having a mask for covering a desired portion of a glass substrate placed on a substrate receiver provided on a carrier, wherein the mask is the glass substrate. In order to prevent dripping at the time of thermal deformation of the mask, an angle is formed on the side of the mask on which the mask is deposited to form a spring between at least one end of the mask and the carrier. A pipe is provided, and the mask is brought into contact with the glass substrate to form a film.
The masking apparatus in the vacuum evaporation apparatus of the present invention according to claim 2 is a masking apparatus having a mask for covering a desired portion of a glass substrate placed on a substrate receiver provided on a carrier, wherein the mask is the glass substrate. In addition, a spring is installed between at least one end of the mask and the carrier to prevent dripping at the time of thermal deformation of the mask. A pipe is provided, and the film is formed without contacting the mask and the glass substrate.
According to a third aspect of the present invention, in the masking apparatus in the vacuum deposition apparatus according to the first or second aspect , a nickel iron alloy is used as a material constituting the mask.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
In the embodiment of the present invention , a mask is formed of a material having a thermal expansion coefficient close to that of a glass substrate, and the mask is brought into contact with the glass substrate to form a film. According to the present embodiment, since the mask bends in the same manner as the bend caused by thermal deformation of the glass substrate, the generation of stress at the contact surface between the mask and the glass substrate can be extremely reduced, and the occurrence of substrate cracking can be prevented. Can do. Further, according to the present embodiment, the problem that the film forming material wraps around the mask portion does not occur.
[0007]
In the embodiment of the present invention , a spring is installed between at least one end of the mask and the carrier in the above embodiment. By applying tension to at least one end of the mask with a spring in this way, even if only the mask generates heat, the tension by this spring improves adhesion and generates stress on the contact surface between the glass substrate and the mask. Can be prevented.
[0008]
In the embodiment of the present invention , the mask is formed of a material having a coefficient of thermal expansion close to that of the glass substrate, and a spring is provided between at least one end of the mask and the carrier so that the mask and the glass substrate are not in contact with each other. It is a film. According to the present embodiment, the mask bends in the same manner as the bend caused by thermal deformation of the glass substrate, and at least one end of the mask is tensioned by the spring, so that the gap dimension between the mask and the glass substrate can be kept constant. it can. Therefore, the contact between the glass substrate and the mask can be prevented, and the problem that the film forming material partially wraps around the mask portion does not occur.
[0009]
In the embodiment of the present invention , a nickel iron alloy is used as a material constituting the mask in the above embodiment. This nickel iron alloy is generally used for glass sealing. For example, when borosilicate glass (thermal expansion coefficient: 32 to 49 × 10 −7 · K −1 ) is used as a glass substrate, 42% nickel is used as a mask material. By using an iron alloy (Ni 42%, Fe balance, thermal expansion coefficient 40 to 47 × 10 −7 · K −1 ), the thermal expansion coefficient between the glass substrate and the mask is close. It is possible to prevent the wraparound more effectively.
[0010]
【Example】
Hereinafter, a masking apparatus in a vacuum deposition apparatus according to an embodiment of the present invention will be described with reference to the drawings.
First, a vacuum deposition apparatus to which the masking apparatus of the present invention is applied will be described with reference to FIG. FIG. 1 is a longitudinal sectional view showing an embodiment of the vacuum vapor deposition apparatus.
As shown in FIG. 1, the film forming chamber 1 includes a vacuum pump 2 for keeping the chamber in a vacuum. In the film forming chamber 1, the glass substrate 3 is mounted on the carrier 4 and moves in the film forming chamber 1 at a constant speed. 5 is a ring hearth, 6 is a turntable on which the ring hearth 5 is mounted, 7 is a film forming material placed on the ring hearth 5, and 8 is an electron beam gun provided in the film forming chamber 1.
[0011]
The film forming material 7 placed on the ring hearth 5 is heated and evaporated by the electron beam emitted from the electron beam gun 8 installed in the film forming chamber 1. The glass substrate 3 is mounted on a frame-shaped carrier 4 having an open window and is conveyed through the film forming chamber 1. The glass substrate 3 is vapor-deposited with the film-forming material 7 evaporated at the time of conveyance attached to the surface.
[0012]
Hereinafter, a masking apparatus according to an embodiment of the present invention will be described.
FIG. 2 is a plan view showing the masking device, FIG. 3 is a side view thereof, and FIG. 4 is an enlarged plan view of a main part showing the configuration of a mask and a spring.
2 to 4, a window frame-shaped substrate receiver 9 made of a ceramic material is provided on the inner peripheral portion of the carrier 4 configured in a frame shape. A substrate 3 made of borosilicate glass is placed on the substrate receiver 9. A mask 10 formed in a strip shape is provided on the lower surface of the substrate receiver 9, that is, on the side serving as the vapor deposition surface in the film forming chamber 1.
As a material of the mask 10, a 42% nickel iron alloy which is a nickel alloy is used. At this time, the thermal expansion coefficient of the mask 10 is 40 to 47 × 10 −7 · K −1 , and the thermal expansion coefficient of borosilicate glass used as the substrate is 32 to 49 × 10 −7 · K −1 . Close value. The thickness of the mask 10 is about 0.25 mm. The mask 10 is disposed so as to correspond to a desired location that requires masking of the glass substrate 3 and to come into contact with the glass substrate 3 when the glass substrate 3 is placed.
At both ends of the mask 10, springs 11 are provided, and are stretched between the carrier 4 and tension to apply the tension to the mask 10. The spring 11 may be provided at either one end.
[0013]
The operation of the masking apparatus in the above embodiment during film formation will be described below. At the time of film formation as shown in FIG. 1, the glass substrate 3 and the mask 10 are heated by a heater (not shown) provided in order to keep the deposition heat and the temperature of the glass substrate uniform. Therefore, although the temperatures of the glass substrate 3 and the mask 10 gradually increase and thermally deform, the thermal expansion coefficient of the mask 10 is brought close to the thermal expansion coefficient of the glass substrate 3, and the mask 10 is pulled by the spring 11. Since tension is applied to the mask 10, the mask 10 deforms following the deformation of the glass substrate 3. That is, only the mask 10 does not thermally expand, and the adhesion with the glass substrate 3 does not deteriorate. As a result, a non-uniform stress is applied to the contact portion between the glass substrate 3 and the mask 10 to cause the glass substrate 3 to break, or a gap is generated between the glass substrate 3 and the mask 10 due to heat dripping. The film material 7 does not wrap around.
[0014]
Hereinafter, a masking apparatus according to another embodiment of the present invention will be described.
FIG. 5 is a plan view showing the same masking device, and FIG. 6 is an enlarged plan view of the main part showing the configuration of the mask and the spring. Members having the same functions as those in the above embodiment are designated by the same reference numerals and description thereof is omitted.
In this embodiment, the long-side mask 10A is wide, and the mask 10B is also provided at the center of the glass substrate. In this case, the mask 10A is provided with the spring 11 so as to be pulled only from one side. This is because, when the mask 10A is wide, the weight of the mask 10A becomes large, and if the tension is applied by pulling the mask 10A from both sides, there is a risk of causing drool. In this embodiment, the square pipe 12 is provided below the masks 10, 10A, 10B, that is, on the vapor deposition surface side, with a predetermined gap from the masks 10, 10A, 10B. The square pipe 12 prevents large dripping at the time of thermal deformation of the masks 10, 10A, 10B. Further, in the present embodiment, the masks 10, 10A, 10B and the glass substrate 3 are arranged so as to be in non-contact even when the glass substrate 4 and the mask 3 are thermally expanded.
[0015]
The operation of the masking apparatus in the above embodiment during film formation will be described below.
At the time of film formation as shown in FIG. 1, the glass substrate 3 and the masks 10, 10A, 10B are heated by a heater (not shown) provided to keep the evaporation heat and the temperature of the glass substrate uniform. Accordingly, the temperatures of the glass substrate 3 and the masks 10, 10A, 10B gradually increase and thermally deform, but the thermal expansion coefficient of the masks 10, 10A, 10B is close to the thermal expansion coefficient of the glass substrate 3, and the mask Since the tension is applied by pulling 10, 10A, 10B with the spring 11, the masks 10, 10A, 10B are deformed similarly to the deformation of the glass substrate 3. Further, in the present embodiment, the masks 10A and 10B are further supported from below by the square pipe 12, so that when the deformation is larger, the deformation of the central portion is suppressed and the glass substrate 3 is separated. This can be prevented.
As described above, according to the present embodiment, only the masks 10, 10 </ b> A, and 10 </ b> B are not thermally expanded to form a large gap with the glass substrate 3, and the film forming material 7 does not go around.
[0016]
【The invention's effect】
As described above, in the present invention, when a film is formed by vapor deposition while covering a part of the glass substrate, it is possible to prevent the glass substrate from cracking or the wraparound of the film forming material. The effect is extremely large, for example, the treatment can be performed reliably.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view of a vacuum deposition apparatus showing an embodiment of the present invention. FIG. 2 is a plan view of a masking apparatus showing an embodiment of the present invention. FIG. 3 is a side view of the apparatus. Fig. 5 is an enlarged plan view of a main part showing the configuration of a mask and a spring of the apparatus. Fig. 5 is a plan view of a masking apparatus showing another embodiment of the invention. Figure [Explanation of symbols]
3 Glass substrate 4 Carrier 9 Substrate holder 10 Mask 10A Mask 10B Mask 11 Spring

Claims (3)

キャリアに設けた基板受け上に載置したガラス基板の所望箇所を被覆するマスクを有するマスキング装置であって、前記マスクを前記ガラス基板と熱膨張率が近い材料で形成し、前記マスクの少なくとも一端と前記キャリアとの間に、ばねを架設し、前記マスクの熱変形時のだれを防止するために前記マスクの蒸着面側に角パイプを設け、前記マスクを前記ガラス基板と接触させて成膜することを特徴とする真空蒸着装置におけるマスキング装置。A masking device having a mask for covering a desired portion of a glass substrate placed on a substrate receiver provided on a carrier, wherein the mask is formed of a material having a coefficient of thermal expansion close to that of the glass substrate, and at least one end of the mask A spring is installed between the carrier and the carrier, a square pipe is provided on the vapor deposition surface side of the mask to prevent dripping at the time of thermal deformation of the mask, and the mask is brought into contact with the glass substrate to form a film. A masking device in a vacuum vapor deposition device. キャリアに設けた基板受け上に載置したガラス基板の所望箇所を被覆するマスクを有するマスキング装置であって、前記マスクを前記ガラス基板と熱膨張率が近い材料で形成するとともに、前記マスクの少なくとも一端と前記キャリアとの間にばねを架設し、前記マスクの熱変形時のだれを防止するために前記マスクの蒸着面側に角パイプを設け、前記マスクと前記ガラス基板とを接触させずに成膜することを特徴とする真空蒸着装置におけるマスキング装置。A masking device having a mask for covering a desired portion of a glass substrate placed on a substrate receiver provided on a carrier, wherein the mask is formed of a material having a coefficient of thermal expansion close to that of the glass substrate, and at least of the mask A spring is installed between one end and the carrier, a square pipe is provided on the vapor deposition surface side of the mask to prevent dripping at the time of thermal deformation of the mask, and the mask and the glass substrate are not in contact with each other. A masking apparatus in a vacuum evaporation apparatus characterized by forming a film. 前記マスクを構成する材料として、ニッケル鉄合金を用いたことを特徴とする請求項１又は２に記載の真空蒸着装置におけるマスキング装置。 3. A masking apparatus in a vacuum deposition apparatus according to claim 1 , wherein a nickel-iron alloy is used as a material constituting the mask.
JP00184499A 1999-01-07 1999-01-07 Masking device in vacuum evaporation system Expired - Lifetime JP4246828B2 (en)

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EP1202329A3 (en) * 2000-10-31 2006-04-12 The Boc Group, Inc. Mask Restraining method and apparatus
JP4651239B2 (en) * 2001-08-24 2011-03-16 大日本印刷株式会社 Metal mask holding jig for vacuum deposition used in organic EL device manufacturing
JP2006045663A (en) * 2004-07-06 2006-02-16 Ulvac Japan Ltd Method for depositing vapor-deposited film on substrate and transport tray
JP4516870B2 (en) * 2004-07-06 2010-08-04 株式会社アルバック Method for simultaneously forming vapor deposition film on a plurality of substrates and transport tray
JP5235225B2 (en) * 2004-07-06 2013-07-10 株式会社アルバック Method for forming vapor deposition film on substrate and transfer tray
JP2006225748A (en) * 2005-02-21 2006-08-31 Ulvac Japan Ltd Method for depositing sputter thin film onto substrate and carrier
JP4817443B2 (en) * 2006-08-03 2011-11-16 トッキ株式会社 Plasma mask CVD equipment
JP5235223B2 (en) * 2011-05-20 2013-07-10 株式会社アルバック Method for forming sputtered thin film on substrate and carrier
JP6028926B2 (en) * 2013-03-14 2016-11-24 パナソニックＩｐマネジメント株式会社 Deposition mask and deposition apparatus

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