JP4237116B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP4237116B2 JP4237116B2 JP2004237540A JP2004237540A JP4237116B2 JP 4237116 B2 JP4237116 B2 JP 4237116B2 JP 2004237540 A JP2004237540 A JP 2004237540A JP 2004237540 A JP2004237540 A JP 2004237540A JP 4237116 B2 JP4237116 B2 JP 4237116B2
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- JP
- Japan
- Prior art keywords
- semiconductor
- semiconductor device
- substrate
- semiconductor elements
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
前記基板上面に前記半導体素子と前記ワイヤを覆って封止樹脂を配置する工程は、前記封止樹脂によって形成される前記半導体装置の上面のコーナ部で前記放熱体の一部が露出するように、前記放熱体に対して封止樹脂を形成する。
2 半導体基板
3 放熱体
4A,4B,4C 熱伝導性接着剤
5A,5B,5C ボンディングワイヤ
6 封止樹脂
7 外部電極
8 金型
Claims (3)
- 外部回路と接続するための外部電極を有する基板と、前記外部電極と反対側の前記基板上に積層して搭載された複数の半導体素子とを備えた積層型マルチチップ半導体装置であって、
前記複数の半導体素子の中の対向する2つの半導体素子の間に、前記半導体装置の上面のコーナ部で一部が露出する放熱体を配置したことを特徴とする半導体装置。 - 前記放熱体と前記基板上に形成された接続パターンとをワイヤを用いて接続し、前記放熱体が電気的に定電位に接続される請求項1記載の半導体装置。
- 複数の半導体素子を熱伝導性接着剤を使用して基板上に積層する積層型マルチチップ半導体装置の製造方法であって、前記複数の半導体素子を積層する際に前記複数の半導体素子の中の2つの半導体素子間に放熱体を熱伝導性接着剤を使用して接続する工程と、前記基板の上面に配置された接続パターンと前記半導体素子の上面に配置された接続パターンをワイヤで接続する工程と、前記基板の上面に配置された接続パターンと前記放熱体の一部をワイヤで接続する工程と、前記基板上面に前記半導体素子と前記ワイヤを覆って封止樹脂を配置する工程と、前記封止樹脂を硬化する工程と、前記基板に外部回路と接続するための外部電極を配置する工程とを含み、
前記基板上面に前記半導体素子と前記ワイヤを覆って封止樹脂を配置する工程は、前記封止樹脂によって形成される前記半導体装置の上面のコーナ部で前記放熱体の一部が露出するように、前記放熱体に対して封止樹脂を形成する半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004237540A JP4237116B2 (ja) | 2004-08-17 | 2004-08-17 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004237540A JP4237116B2 (ja) | 2004-08-17 | 2004-08-17 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006059871A JP2006059871A (ja) | 2006-03-02 |
JP4237116B2 true JP4237116B2 (ja) | 2009-03-11 |
Family
ID=36107114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004237540A Expired - Fee Related JP4237116B2 (ja) | 2004-08-17 | 2004-08-17 | 半導体装置およびその製造方法 |
Country Status (1)
Country | Link |
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JP (1) | JP4237116B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7196427B2 (en) * | 2005-04-18 | 2007-03-27 | Freescale Semiconductor, Inc. | Structure having an integrated circuit on another integrated circuit with an intervening bent adhesive element |
JP6237647B2 (ja) * | 2013-01-07 | 2017-11-29 | パナソニック株式会社 | 放熱部材を備えた半導体装置 |
KR102184989B1 (ko) | 2013-09-11 | 2020-12-01 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
CN106713151B (zh) * | 2016-11-25 | 2019-12-31 | 东莞大联社电子散热材料有限公司 | 一种路由器新型散热模组 |
-
2004
- 2004-08-17 JP JP2004237540A patent/JP4237116B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2006059871A (ja) | 2006-03-02 |
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