JP4232675B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4232675B2
JP4232675B2 JP2004109213A JP2004109213A JP4232675B2 JP 4232675 B2 JP4232675 B2 JP 4232675B2 JP 2004109213 A JP2004109213 A JP 2004109213A JP 2004109213 A JP2004109213 A JP 2004109213A JP 4232675 B2 JP4232675 B2 JP 4232675B2
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Japan
Prior art keywords
region
concentration
insulating film
semiconductor device
film
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Expired - Fee Related
Application number
JP2004109213A
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English (en)
Japanese (ja)
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JP2005294638A (ja
Inventor
幸政 石田
陵一 野澤
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Seiko Epson Corp
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Seiko Epson Corp
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Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2004109213A priority Critical patent/JP4232675B2/ja
Priority to CNB200510055479XA priority patent/CN100521072C/zh
Priority to US11/090,868 priority patent/US20050221568A1/en
Priority to KR1020050027127A priority patent/KR100666888B1/ko
Publication of JP2005294638A publication Critical patent/JP2005294638A/ja
Application granted granted Critical
Publication of JP4232675B2 publication Critical patent/JP4232675B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L2029/7863—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2004109213A 2004-04-01 2004-04-01 半導体装置の製造方法 Expired - Fee Related JP4232675B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004109213A JP4232675B2 (ja) 2004-04-01 2004-04-01 半導体装置の製造方法
CNB200510055479XA CN100521072C (zh) 2004-04-01 2005-03-18 半导体器件的制造方法、半导体器件、电光装置用基板、电光装置和电子设备
US11/090,868 US20050221568A1 (en) 2004-04-01 2005-03-28 Manufacturing method of semiconductor device, semiconductor device, substrate for electro-optical device, electro-optical device, and electronic apparatus
KR1020050027127A KR100666888B1 (ko) 2004-04-01 2005-03-31 반도체 장치의 제조방법, 반도체 장치, 전기광학장치용기판, 전기광학장치 및 전자기기

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004109213A JP4232675B2 (ja) 2004-04-01 2004-04-01 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2005294638A JP2005294638A (ja) 2005-10-20
JP4232675B2 true JP4232675B2 (ja) 2009-03-04

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JP2004109213A Expired - Fee Related JP4232675B2 (ja) 2004-04-01 2004-04-01 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US20050221568A1 (zh)
JP (1) JP4232675B2 (zh)
KR (1) KR100666888B1 (zh)
CN (1) CN100521072C (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9484419B2 (en) 2014-06-12 2016-11-01 Industry-Academic Cooperation Foundation, Yonsei University Oxide thin film, method for post-treating oxide thin film and electronic apparatus

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US6579751B2 (en) * 1999-09-01 2003-06-17 Micron Technology, Inc. Semiconductor processing methods of forming integrated circuitry
US7416924B2 (en) * 2004-11-11 2008-08-26 Samsung Electronics Co., Ltd. Organic light emitting display with single crystalline silicon TFT and method of fabricating the same
KR100848338B1 (ko) * 2007-01-09 2008-07-25 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 포함하는평판표시장치
US9018109B2 (en) * 2009-03-10 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including silicon nitride layer and manufacturing method thereof
US8669644B2 (en) * 2009-10-07 2014-03-11 Texas Instruments Incorporated Hydrogen passivation of integrated circuits
KR101426646B1 (ko) 2013-02-28 2014-08-06 충남대학교산학협력단 박막 트랜지스터의 제조방법
CN104576688B (zh) * 2013-10-10 2018-11-09 精工爱普生株式会社 发光装置以及电子设备
CN105185788A (zh) * 2015-09-01 2015-12-23 武汉华星光电技术有限公司 阵列基板及其制造方法
US10222547B2 (en) 2015-11-30 2019-03-05 Corning Incorporated Flame-retardant optical fiber coating
US10167396B2 (en) 2017-05-03 2019-01-01 Corning Incorporated Low smoke fire-resistant optical ribbon
US10692760B2 (en) * 2017-11-30 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for manufacturing the same

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US5821563A (en) * 1990-12-25 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from reverse leakage and throw leakage
JP3072000B2 (ja) * 1994-06-23 2000-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH08139315A (ja) * 1994-11-09 1996-05-31 Mitsubishi Electric Corp Ｍｏｓトランジスタ、半導体装置及びそれらの製造方法
US5937301A (en) * 1997-08-19 1999-08-10 Advanced Micro Devices Method of making a semiconductor device having sidewall spacers with improved profiles
US6093594A (en) * 1998-04-29 2000-07-25 Advanced Micro Devices, Inc. CMOS optimization method utilizing sacrificial sidewall spacer
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JP3875455B2 (ja) * 1999-04-28 2007-01-31 株式会社東芝 半導体装置の製造方法
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KR100393205B1 (ko) * 2000-05-30 2003-07-31 삼성전자주식회사 자기정렬 콘택구조를 가진 메모리영역과 샐리사이디드된듀얼 게이트 구조의 로직영역이 병합된 ｍｍｌ 반도체소자 및 그 제조방법
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Publication number Priority date Publication date Assignee Title
US9484419B2 (en) 2014-06-12 2016-11-01 Industry-Academic Cooperation Foundation, Yonsei University Oxide thin film, method for post-treating oxide thin film and electronic apparatus

Also Published As

Publication number Publication date
KR100666888B1 (ko) 2007-01-10
US20050221568A1 (en) 2005-10-06
JP2005294638A (ja) 2005-10-20
CN1677613A (zh) 2005-10-05
CN100521072C (zh) 2009-07-29
KR20060045369A (ko) 2006-05-17

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