JP4212102B2 - 集積回路の高周波増幅器 - Google Patents
集積回路の高周波増幅器 Download PDFInfo
- Publication number
- JP4212102B2 JP4212102B2 JP2004510104A JP2004510104A JP4212102B2 JP 4212102 B2 JP4212102 B2 JP 4212102B2 JP 2004510104 A JP2004510104 A JP 2004510104A JP 2004510104 A JP2004510104 A JP 2004510104A JP 4212102 B2 JP4212102 B2 JP 4212102B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- integrated circuit
- output
- base
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 32
- 230000003321 amplification Effects 0.000 claims description 30
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/198—A hybrid coupler being used as coupling circuit between stages of an amplifier circuit
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Description
Claims (10)
- 最終段が、増幅すべき信号を差動モードで受信する二つの信号増幅用入力点E及びE’と、それぞれがベース、エミッタ及びコレクタを有する同じタイプの導通特性を持った四つの主要なトランジスタを備える増幅器から構成される集積回路であって、四つのトランジスタとは、コモンエミッタ方式で搭載され、コレクタが集積回路の出力(S)に接続されている第1のトランジスタ、即ち、出力トランジスタ(Q1)、入力点Eと出力トランジスタ(Q1)のベースとの間に電圧フォロワー方式で搭載される第2のトランジスタ(Q2)、コモンエミッタ方式で搭載され、コレクタが出力トランジスタ(Q1)のベースに接続される第3のトランジスタ(Q3)、及び電圧フォロワー方式で搭載され、ベースが入力点E’に接続され、エミッタが第3のトランジスタ(Q3)のベースに接続されている第4のトランジスタ(Q4)であり、第1のトランジスタ(Q1)のベースに接続される第1の電流源(M2)と、第3のトランジスタ(Q3)のベースに接続される第2の電流源(M4)とを更に有する集積回路。
- 四つのトランジスタが全てバイポーラトランジスタであることを特徴とする請求項1に記載の集積回路。
- 出力トランジスタ(Q1)の大きさが第3のトランジスタ(Q3)の大きさのN倍であることを特徴とする請求項1又は2に記載の集積回路。
- 第2のトランジスタ(Q2)の大きさが第4のトランジスタ(Q4)と同じ比率Nであることを特徴とする請求項3に記載の集積回路。
- 第1と第2の電流源が同じ比率Nで電流を供給することを特徴とする請求項4に記載の集積回路。
- エミッタ抵抗(R1)が出力トランジスタ(Q1)のエミッタとグラウンド(M)との間に設けられ、エミッタ抵抗(R3)が第3のトランジスタのエミッタとグラウンド(M)との間に設けられ、出力トランジスタのエミッタ抵抗(R1)が第3のトランジスタのエミッタ抵抗(R3)のN分の1であることを特徴とする請求項3ないし5のいずれか1項に記載の集積回路。
- ベースが固定電圧(Vmc)によってバイアスされ、エミッタがエミッタ抵抗(R5)を介してグラウンドに接続され、コレクタが第3のトランジスタ(Q3)のベースに接続されている第5のトランジスタ(Q5)を有することを特徴とする請求項1ないし5のいずれか1項に記載の集積回路。
- 第5のトランジスタ(Q5)の大きさは、第3のトランジスタ(Q3)より小さく、その比率は第1と第3のトランジスタ間の大きさの比と同じであることを特徴とする請求項7に記載の集積回路。
- 請求項1ないし8のいずれか1項に記載されている増幅器から構成される二つの半増幅器(A1,A2)を備え、同一で逆位相の入力信号を受信し、位相再調整された該半増幅器の出力電流を合算するために設けられている結合回路(CH)に接続できる二つの出力を有することを特徴とする集積回路。
- 半増幅器の出力は集積回路の出力であることと、結合回路(CH)は集積回路の外部に存在することとを特徴とする請求項9に記載の集積回路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0206723A FR2840466B1 (fr) | 2002-05-31 | 2002-05-31 | Amplificateur haute frequence en circuit integre |
PCT/FR2003/001504 WO2003103133A2 (fr) | 2002-05-31 | 2003-05-16 | Amplificateur haute frequence en circuit integre |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005534213A JP2005534213A (ja) | 2005-11-10 |
JP4212102B2 true JP4212102B2 (ja) | 2009-01-21 |
Family
ID=29558882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004510104A Expired - Fee Related JP4212102B2 (ja) | 2002-05-31 | 2003-05-16 | 集積回路の高周波増幅器 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7088184B2 (ja) |
EP (1) | EP1554799B1 (ja) |
JP (1) | JP4212102B2 (ja) |
CN (1) | CN100527603C (ja) |
AU (1) | AU2003249409A1 (ja) |
CA (1) | CA2485657C (ja) |
DE (1) | DE60321028D1 (ja) |
FR (1) | FR2840466B1 (ja) |
WO (1) | WO2003103133A2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7423476B2 (en) * | 2006-09-25 | 2008-09-09 | Micron Technology, Inc. | Current mirror circuit having drain-source voltage clamp |
CN103546107A (zh) * | 2013-10-25 | 2014-01-29 | 苏州贝克微电子有限公司 | 一种宽带线性载流放大器 |
CN109450392A (zh) * | 2018-12-27 | 2019-03-08 | 苏州英诺迅科技股份有限公司 | 一种分布式射随放大器 |
CN114124004B (zh) * | 2021-11-23 | 2024-06-21 | 上海天马微电子有限公司 | 一种信号处理电路及信号处理装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4254381A (en) * | 1979-04-05 | 1981-03-03 | Rca Corporation | Balanced-to-single-ended signal converters |
NL8400633A (nl) * | 1984-02-29 | 1985-09-16 | Philips Nv | Versterkerschakeling. |
FR2645370B1 (fr) | 1989-04-04 | 1991-05-31 | Thomson Composants Militaires | Circuit d'amplification a gain commande de maniere lineaire |
FR2657719B1 (fr) | 1990-01-30 | 1994-08-26 | Thomson Composants Militaires | Circuit d'echantillonnage de signaux analogiques. |
FR2672750B1 (fr) | 1991-02-08 | 1996-12-20 | Thomson Composants Militaires | Circuit d'amplification a commande de gain exponentielle. |
JPH07118618B2 (ja) * | 1991-02-28 | 1995-12-18 | 菊水電子工業株式会社 | 負帰還増幅器 |
FR2688361A1 (fr) | 1992-03-03 | 1993-09-10 | Thomson Composants Militaires | Etage de sortie push-pull pour amplificateur en circuit integre. |
FR2714237B1 (fr) | 1993-12-17 | 1996-01-26 | Thomson Csf Semiconducteurs | Amplificateur à gain variable. |
US5828269A (en) * | 1996-12-05 | 1998-10-27 | Philips Electronics North America Corporation | High-frequency amplifier with high input impedance and high power efficiency |
US5844443A (en) * | 1996-12-12 | 1998-12-01 | Philips Electronics North America Corporation | Linear high-frequency amplifier with high input impedance and high power efficiency |
FR2761834B1 (fr) | 1997-04-04 | 1999-10-22 | Thomson Csf | Amplificateur avec etage d'entree en base commune |
US5994959A (en) * | 1998-12-18 | 1999-11-30 | Maxim Integrated Products, Inc. | Linearized amplifier core |
US6417734B1 (en) * | 2000-06-26 | 2002-07-09 | Koninklijke Philips Electronics N.V. | High-frequency amplifier circuit with negative impedance cancellation |
JP3833530B2 (ja) * | 2001-12-13 | 2006-10-11 | 株式会社東芝 | 差動増幅器 |
-
2002
- 2002-05-31 FR FR0206723A patent/FR2840466B1/fr not_active Expired - Fee Related
-
2003
- 2003-05-16 DE DE60321028T patent/DE60321028D1/de not_active Expired - Lifetime
- 2003-05-16 EP EP03755998A patent/EP1554799B1/fr not_active Expired - Fee Related
- 2003-05-16 US US10/514,506 patent/US7088184B2/en not_active Expired - Fee Related
- 2003-05-16 CA CA2485657A patent/CA2485657C/fr not_active Expired - Fee Related
- 2003-05-16 AU AU2003249409A patent/AU2003249409A1/en not_active Abandoned
- 2003-05-16 WO PCT/FR2003/001504 patent/WO2003103133A2/fr active IP Right Grant
- 2003-05-16 CN CNB038119714A patent/CN100527603C/zh not_active Expired - Fee Related
- 2003-05-16 JP JP2004510104A patent/JP4212102B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100527603C (zh) | 2009-08-12 |
CA2485657C (fr) | 2011-01-11 |
CA2485657A1 (fr) | 2003-12-11 |
AU2003249409A8 (en) | 2003-12-19 |
DE60321028D1 (de) | 2008-06-26 |
WO2003103133A3 (fr) | 2004-05-27 |
JP2005534213A (ja) | 2005-11-10 |
EP1554799A2 (fr) | 2005-07-20 |
FR2840466B1 (fr) | 2004-07-16 |
FR2840466A1 (fr) | 2003-12-05 |
AU2003249409A1 (en) | 2003-12-19 |
US7088184B2 (en) | 2006-08-08 |
CN1864323A (zh) | 2006-11-15 |
WO2003103133A2 (fr) | 2003-12-11 |
EP1554799B1 (fr) | 2008-05-14 |
US20060049877A1 (en) | 2006-03-09 |
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