JP4183008B2 - マイクロリレー - Google Patents
マイクロリレー Download PDFInfo
- Publication number
- JP4183008B2 JP4183008B2 JP2007050098A JP2007050098A JP4183008B2 JP 4183008 B2 JP4183008 B2 JP 4183008B2 JP 2007050098 A JP2007050098 A JP 2007050098A JP 2007050098 A JP2007050098 A JP 2007050098A JP 4183008 B2 JP4183008 B2 JP 4183008B2
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- JP
- Japan
- Prior art keywords
- armature
- movable contact
- longitudinal direction
- fixed
- base substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H51/00—Electromagnetic relays
- H01H51/22—Polarised relays
- H01H51/2272—Polarised relays comprising rockable armature, rocking movement around central axis parallel to the main plane of the armature
- H01H51/2281—Contacts rigidly combined with armature
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- Micromachines (AREA)
Description
2 電磁石装置
3 アーマチュアブロック
4 カバー
14 固定接点
30 アーマチュア
31 フレーム部
32 支持ばね部
34 可動接点基台部
35 接圧ばね部
39 可動接点
Claims (1)
- 電磁石装置を収納する収納部が形成され且つ厚み方向の一表面側に一対の固定接点が設けられたベース基板と、
ベース基板の前記一表面側に固着される枠状のフレーム部、および、フレーム部の内側に配置されて支持ばね部を介してフレーム部に揺動自在に支持され電磁石装置により駆動されるアーマチュア、および、アーマチュアに接圧ばね部を介して支持された可動接点基台部、および、可動接点基台部に設けられて一対の固定接点に跨って接離する可動接点を有するアーマチュアブロックと、
アーマチュアブロックにおけるベース基板とは反対側で周部がフレーム部に固着されたカバーとを備え、
アーマチュアはフレーム部に囲まれる面内での形状が長方形状であって、
可動接点基台部は、アーマチュアの短手方向を長手方向とし、長手方向での両端部においてそれぞれ接圧ばね部に連結され、
一対の固定接点はアーマチュアの長手方向に並設されていて、
可動接点基台部の長手方向の両端部には、それぞれ、平面形状が矩形状で一対の固定接点に跨って配置される可動接点が設けられ、
可動接点基台部の長手方向の中間部は両端部に比べて細幅に形成されていることを特徴とするマイクロリレー。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007050098A JP4183008B2 (ja) | 2007-02-28 | 2007-02-28 | マイクロリレー |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007050098A JP4183008B2 (ja) | 2007-02-28 | 2007-02-28 | マイクロリレー |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004018962A Division JP4059201B2 (ja) | 2004-01-27 | 2004-01-27 | マイクロリレー |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007180047A JP2007180047A (ja) | 2007-07-12 |
JP4183008B2 true JP4183008B2 (ja) | 2008-11-19 |
Family
ID=38304981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007050098A Expired - Fee Related JP4183008B2 (ja) | 2007-02-28 | 2007-02-28 | マイクロリレー |
Country Status (1)
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Cited By (16)
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---|---|---|---|---|
US8405147B2 (en) | 2005-07-11 | 2013-03-26 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink |
US8536636B2 (en) | 2007-04-26 | 2013-09-17 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
US8559907B2 (en) | 2004-06-23 | 2013-10-15 | Peregrine Semiconductor Corporation | Integrated RF front end with stacked transistor switch |
US8583111B2 (en) | 2001-10-10 | 2013-11-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
US8604864B2 (en) | 2008-02-28 | 2013-12-10 | Peregrine Semiconductor Corporation | Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals |
US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
US8954902B2 (en) | 2005-07-11 | 2015-02-10 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
-
2007
- 2007-02-28 JP JP2007050098A patent/JP4183008B2/ja not_active Expired - Fee Related
Cited By (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8583111B2 (en) | 2001-10-10 | 2013-11-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
US8649754B2 (en) | 2004-06-23 | 2014-02-11 | Peregrine Semiconductor Corporation | Integrated RF front end with stacked transistor switch |
US9680416B2 (en) | 2004-06-23 | 2017-06-13 | Peregrine Semiconductor Corporation | Integrated RF front end with stacked transistor switch |
US8559907B2 (en) | 2004-06-23 | 2013-10-15 | Peregrine Semiconductor Corporation | Integrated RF front end with stacked transistor switch |
US9369087B2 (en) | 2004-06-23 | 2016-06-14 | Peregrine Semiconductor Corporation | Integrated RF front end with stacked transistor switch |
US8954902B2 (en) | 2005-07-11 | 2015-02-10 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
US8405147B2 (en) | 2005-07-11 | 2013-03-26 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink |
US9087899B2 (en) | 2005-07-11 | 2015-07-21 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
US9130564B2 (en) | 2005-07-11 | 2015-09-08 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink |
US9608619B2 (en) | 2005-07-11 | 2017-03-28 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US10951210B2 (en) | 2007-04-26 | 2021-03-16 | Psemi Corporation | Tuning capacitance to enhance FET stack voltage withstand |
US8536636B2 (en) | 2007-04-26 | 2013-09-17 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
US9177737B2 (en) | 2007-04-26 | 2015-11-03 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
US9024700B2 (en) | 2008-02-28 | 2015-05-05 | Peregrine Semiconductor Corporation | Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device |
US8604864B2 (en) | 2008-02-28 | 2013-12-10 | Peregrine Semiconductor Corporation | Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals |
US9293262B2 (en) | 2008-02-28 | 2016-03-22 | Peregrine Semiconductor Corporation | Digitally tuned capacitors with tapered and reconfigurable quality factors |
US8669804B2 (en) | 2008-02-28 | 2014-03-11 | Peregrine Semiconductor Corporation | Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals |
US9197194B2 (en) | 2008-02-28 | 2015-11-24 | Peregrine Semiconductor Corporation | Methods and apparatuses for use in tuning reactance in a circuit device |
US9106227B2 (en) | 2008-02-28 | 2015-08-11 | Peregrine Semiconductor Corporation | Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals |
US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
US10862473B2 (en) | 2018-03-28 | 2020-12-08 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
US11018662B2 (en) | 2018-03-28 | 2021-05-25 | Psemi Corporation | AC coupling modules for bias ladders |
US11418183B2 (en) | 2018-03-28 | 2022-08-16 | Psemi Corporation | AC coupling modules for bias ladders |
US11870431B2 (en) | 2018-03-28 | 2024-01-09 | Psemi Corporation | AC coupling modules for bias ladders |
US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Also Published As
Publication number | Publication date |
---|---|
JP2007180047A (ja) | 2007-07-12 |
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