JP4169071B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP4169071B2 JP4169071B2 JP2006344131A JP2006344131A JP4169071B2 JP 4169071 B2 JP4169071 B2 JP 4169071B2 JP 2006344131 A JP2006344131 A JP 2006344131A JP 2006344131 A JP2006344131 A JP 2006344131A JP 4169071 B2 JP4169071 B2 JP 4169071B2
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- 239000004065 semiconductor Substances 0.000 claims description 92
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 19
- 239000010410 layer Substances 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 12
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 238000000137 annealing Methods 0.000 description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- 125000006850 spacer group Chemical group 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Description
図1は、本発明の表示装置の一例として、液晶パネルを備えた表示装置の概略断面図を示す。この図に示すように、本実施形態の表示装置1は、液晶パネル101を備えている。この液晶パネル101は、対向配置された第1基板103と第2基板104との間に液晶層105を狭持してなる。
図4(a)の拡大平面図に示すように、表示領域103aに設けられた薄膜トランジスタTr1の活性領域5a-1は、三日月形状の結晶粒b,b,…の配列によって構成されている。
先ず、図4(a)および図5を用いて説明した構成の薄膜トランジスタTr1の製造方法を、図8に基づき、他の図面を参照しつつ説明する。
図6を用いて説明した構成の活性領域5a-1を備えた薄膜トランジスタTr1を作製する場合には、例えば先に図9(a)を用いて説明した爆発的結晶化を適用した方法が例示される。
先ず、図7(b)を用いて説明した構成の活性領域5a-1を備えた薄膜トランジスタTr1を作製する場合には、例えば先に図9(b)を用いて説明した、半導体薄膜5を深さ方向の全域で完全溶融させる結晶化を適用した方法が例示される。
図4(b)の拡大平面図に示すように、周辺領域103bに設けられた薄膜トランジスタTr2の活性領域5a-2は、帯状の結晶粒B,B,…の配列によって構成されている。
以上のような周辺領域103bの薄膜トランジスタTr2の作製は、先に図8を用いて説明した表示領域の薄膜トランジスタTr1の作製方法において、半導体薄膜5の結晶化を以下のような手順に変更すれば良い。
以上説明した薄膜トランジスタTr1,Tr2を設けた表示装置として、図1および図2を用いて説明した液晶表示装置を作製する場合には、以下のように行う。
表示領域の薄膜トランジスタTr1に用いるための結晶化を行った。
・チャネル長L方向のスポット径r1 =500nm
・走査方向yのスポット径 =300nm
・対物レンズの実効NA =0.6
・チャネル長L方向への移動ピッチp1=400nm
・走査方向yへの走査速度vt =3m/秒
・基板上での照射エネルギー =15mW相当
尚、半導体薄膜に対するレーザ光Lhの照射は、常にフォーカスサーボをかけ、高速での走査時に焦点が外れないようにした。また照射エネルギーが一定になるように照射ビームの一部をモニターしてエネルギーの変動がないようにした。
表示領域の薄膜トランジスタTr1に用いるための結晶化を行った。
・チャネル長L方向のスポット径r2 =約500nmの円形状
・対物レンズの実効NA =0.8
・チャネル長L方向への移動ピッチp2=400nm
・走査方向yへの走査速度vt =1m/秒
・基板上での照射エネルギー =12mW相当
尚、半導体薄膜に対するレーザ光Lhの照射は、常にフォーカスサーボをかけ、高速での走査時に焦点が外れないようにした。また照射エネルギーが一定になるように照射ビームの一部をモニターしてエネルギーの変動がないようにした。
表示領域の薄膜トランジスタTr1に用いるための結晶化を行った。
・チャネル長L方向のスポット径r2 =約500nmの円形状
・対物レンズの実効NA =0.4
・チャネル長L方向への移動ピッチp2=600nm
・走査方向yへの走査速度vt =3m/秒
・基板上での照射エネルギー =12mW相当
尚、半導体薄膜に対するレーザ光Lhの照射は、常にフォーカスサーボをかけ、高速での走査時に焦点が外れないようにした。また照射エネルギーが一定になるように照射ビームの一部をモニターしてエネルギーの変動がないようにした。
周辺領域の薄膜トランジスタTr2に用いるための結晶化を行った。
・チャネル長L方向のスポット径r3 =約500nmの円形状
・対物レンズの実効NA =0.8
・走査方向yと直交する方向への移動ピッチp =100nm
・走査方向y(チャネル長L方向)の走査速度vt=1m/秒、
・基板上での照射エネルギー =12mW相当
尚、半導体薄膜に対するレーザ光Lhの照射は、常にフォーカスサーボをかけ、高速での走査時に焦点が外れないようにした。また照射エネルギーが一定になるように照射ビームの一部をモニターしてエネルギーの変動がないようにした。
周辺領域の薄膜トランジスタTr2に用いるための結晶化を行った。
・チャネル長L方向のスポット径r3 =約500nmの円形状
・対物レンズの実効NA =0.4
・チャネル長Lと直交する方向への移動ピッチp =200nm
・走査方向y(チャネル長L方向)の走査速度vt=3m/秒、
・基板上での照射エネルギー =12mW相当
実施例2-1、2-2、3-1、3-2では、実施例2,3のようにして多結晶化した領域を用いて図4(a)に示した表示領域用の薄膜トランジスタTr1を作製した。また、実施例4-1、4-2、5-1、5-2では、実施例4,5のようにして多結晶化した領域を用いて図4(b)に示した周辺領域用の薄膜トランジスタTr2を作製した。
Claims (6)
- 複数の画素電極と当該各画素電極を駆動するための薄膜トランジスタとを配列形成した駆動基板を有する表示装置であって、
エネルギービームの照射によって多結晶化した活性領域を有する半導体薄膜と、当該活性領域を横切るように設けられたゲート電極とを備え、
前記ゲート電極と重なる前記活性領域のチャネル部では、当該ゲート電極の延設方向に沿って結晶粒界が周期的に配置されると共に、当該結晶粒界と結晶粒界との間には結晶粒界の延方向に凸となる三日月状の結晶粒が配列されたことにより、結晶状態がチャネル長方向に周期的に変化している
ことを特徴とする表示装置。 - 請求項1記載の表示装置において、
前記三日月状の結晶粒は結晶粒界間にわたる大きさであって、前記チャネル部は非晶質領域を含まずに全面が結晶化されている
ことを特徴とする表示装置。 - 複数の画素電極と当該各画素電極を駆動するための薄膜トランジスタとを配列形成した駆動基板を有する表示装置であって、
エネルギービームの照射によって多結晶化した活性領域を有する半導体薄膜と、当該活性領域を横切るように設けられたゲート電極とを備え、
前記ゲート電極と重なる前記活性領域のチャネル部では、結晶状態がチャネル長方向に周期的に変化しており、略同一の結晶状態がチャネル部を横切っていると共に、前記結晶状態の変化の周期毎に、前記活性領域を横切る状態で非晶質帯と結晶質帯とが交互に設けられており、
前記結晶質帯には、当該結晶質帯の幅方向にわたる大きさで当該結晶質帯の延設方向に凸となる三日月形状の結晶粒が、当該結晶質帯の延設方向に配列されている
ことを特徴とする表示装置。 - 請求項1〜3のうちの1項に記載の表示装置において、
前記チャネル部には、前記結晶状態の変化の周期が2周期以上の所定数で設けられている
ことを特徴とする表示装置。 - 請求項1〜4のうちの1項に記載の表示装置において、
前記画素電極と薄膜トランジスタが配列形成された表示領域の周囲に、薄膜トランジスタを用いて構成された周辺回路が設けられており、
前記周辺回路を構成する薄膜トランジスタは、
エネルギービームの照射によって多結晶化した活性領域を有する半導体薄膜と、当該活性領域を横切るように設けられたゲート電極とを備え、
前記ゲート電極と重なる前記活性領域のチャネル部には、当該チャネル部を横切る状態で当該ゲート電極に沿って帯状の結晶粒が延設され、当該帯状の結晶粒がチャネル長方向に周期的に設けられている
ことを特徴とする表示装置。 - 請求項1〜5のうちの1項に記載の表示装置において、
前記周辺回路を構成する薄膜トランジスタのチャネル部には、前記帯状の結晶粒の粒界が2周期以上の所定数で設けられている
ことを特徴とする表示装置。
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TW096116921A TWI364613B (en) | 2006-05-25 | 2007-05-11 | Display |
EP07010275A EP1860699A1 (en) | 2006-05-25 | 2007-05-23 | Display having thin fim transistors with channel region of varying crystal state |
US11/753,949 US7541615B2 (en) | 2006-05-25 | 2007-05-25 | Display device including thin film transistors |
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