JP4168073B2 - 集積回路においてトレンチアイソレーション構造を形成する方法 - Google Patents
集積回路においてトレンチアイソレーション構造を形成する方法 Download PDFInfo
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- JP4168073B2 JP4168073B2 JP2007001007A JP2007001007A JP4168073B2 JP 4168073 B2 JP4168073 B2 JP 4168073B2 JP 2007001007 A JP2007001007 A JP 2007001007A JP 2007001007 A JP2007001007 A JP 2007001007A JP 4168073 B2 JP4168073 B2 JP 4168073B2
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- 238000000034 method Methods 0.000 title claims description 63
- 238000002955 isolation Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 description 42
- 238000007254 oxidation reaction Methods 0.000 description 42
- 230000008569 process Effects 0.000 description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000001590 oxidative effect Effects 0.000 description 7
- 230000002411 adverse Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
Description
12 半導体基板
13 バッファ層
15 耐酸化層
14 バッファ層13の残りの部分
16 耐酸化層15の残りの部分
18 フォトレジストマスク
20 半導体基板12の第1の部分
22 トレンチ
24 トレンチ側壁
26 トレンチ底部
28 シリコン層
30 第1の誘電体層
32 エッチングされた誘電体層
34 第2の誘電体層
36 トレンチプラグ
38 犠牲酸化物層
42 ゲート誘電体層
44 トランジスタのゲート電極
Claims (4)
- 集積回路においてトレンチアイソレーション構造を形成する方法であって、
半導体基板の第1の部分をエッチングしてトレンチを形成する段階、
前記トレンチ内に第1の誘電体層を熱成長する段階であって、該第1の誘電体層は前記トレンチを充填するには不充分な厚さを有する、段階、
前記第1の誘電体層をその形成後にアニールする段階、
前記トレンチ内に第2の誘電体層を被着する段階であって、該第2の誘電体層は前記第1の誘電体層がアニールされた後に形成される、段階、
前記第2の誘電体層をアニールする段階、そして
前記第2の誘電体層の一部を除去して前記トレンチ内にトレンチプラグを形成する段階、
を具備することを特徴とする集積回路においてトレンチアイソレーション構造を形成する方法。 - 集積回路においてトレンチアイソレーション構造を形成する方法であって、
半導体基板の第1の部分をエッチングしてトレンチを形成する段階、
前記トレンチ内に第1の誘電体層を熱成長する段階であって、該第1の誘電体層は前記トレンチを充填するには不充分な厚さを有する、段階、
前記第1の誘電体層をその形成後にアニールする段階、
前記トレンチ内に第2の誘電体層を被着する段階であって、該第2の誘電体層は前記第1の誘電体層がアニールされた後に形成される、段階、
前記第2の誘電体層をアニールする段階、そして
前記第2の誘電体層の一部を除去して前記トレンチ内にトレンチプラグを形成する段階であって、前記第2の誘電体層の一部を除去する段階は前記第2の誘電体層をアニールした後に行なわれる、段階、
を具備することを特徴とする集積回路においてトレンチアイソレーション構造を形成する方法。 - 集積回路においてトレンチアイソレーション構造を形成する方法であって、
半導体基板の第1の部分をエッチングしてトレンチを形成する段階であって、前記トレンチは200〜600ナノメートルの範囲の幅を有する、段階、
前記トレンチ内に第1の誘電体層を熱成長する段階であって、該第1の誘電体層は前記トレンチを充填するには不充分な厚さを有する、段階、
前記第1の誘電体層をその形成後にアニールする段階、
前記トレンチ内に第2の誘電体層を被着する段階であって、該第2の誘電体層は前記第1の誘電体層がアニールされた後に形成される、段階、
前記第2の誘電体層をアニールする段階、そして
前記第2の誘電体層の一部を除去するために化学機械研磨を行なって前記トレンチ内にトレンチプラグを形成する段階であって、前記第2の誘電体層の一部を除去する段階は前記第2の誘電体層をアニールした後に行なわれる、段階、
を具備することを特徴とする集積回路においてトレンチアイソレーション構造を形成する方法。 - 集積回路においてトレンチアイソレーション構造を形成する方法であって、
半導体基板の第1の部分をエッチングしてトレンチを形成する段階であって、前記トレンチは200〜600ナノメートルの範囲の幅を有する、段階、
前記トレンチ内に第1の誘電体層を熱成長する段階であって、該第1の誘電体層は前記トレンチを充填するには不充分な厚さを有する、段階、
前記第1の誘電体層をその形成後にアニールする段階、
前記トレンチ内に第2の誘電体層を被着する段階であって、該第2の誘電体層は前記第1の誘電体層がアニールされた後に形成される、段階、そして
前記第2の誘電体層の一部を除去するために化学機械研磨を行なって前記トレンチ内にトレンチプラグを形成する段階、
を具備することを特徴とする集積回路においてトレンチアイソレーション構造を形成する方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/416,243 US5786263A (en) | 1995-04-04 | 1995-04-04 | Method for forming a trench isolation structure in an integrated circuit |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10184596A Division JP4416843B2 (ja) | 1995-04-04 | 1996-04-01 | 集積回路においてトレンチアイソレーション構造を形成する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007096353A JP2007096353A (ja) | 2007-04-12 |
JP4168073B2 true JP4168073B2 (ja) | 2008-10-22 |
Family
ID=23649176
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10184596A Expired - Fee Related JP4416843B2 (ja) | 1995-04-04 | 1996-04-01 | 集積回路においてトレンチアイソレーション構造を形成する方法 |
JP2007001007A Expired - Fee Related JP4168073B2 (ja) | 1995-04-04 | 2007-01-09 | 集積回路においてトレンチアイソレーション構造を形成する方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10184596A Expired - Fee Related JP4416843B2 (ja) | 1995-04-04 | 1996-04-01 | 集積回路においてトレンチアイソレーション構造を形成する方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5786263A (ja) |
EP (1) | EP0736897B1 (ja) |
JP (2) | JP4416843B2 (ja) |
KR (1) | KR100394517B1 (ja) |
DE (1) | DE69623679T2 (ja) |
TW (1) | TW348274B (ja) |
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-
1995
- 1995-04-04 US US08/416,243 patent/US5786263A/en not_active Expired - Lifetime
-
1996
- 1996-02-03 TW TW085101342A patent/TW348274B/zh not_active IP Right Cessation
- 1996-03-25 EP EP96104675A patent/EP0736897B1/en not_active Expired - Lifetime
- 1996-03-25 DE DE69623679T patent/DE69623679T2/de not_active Expired - Lifetime
- 1996-04-01 JP JP10184596A patent/JP4416843B2/ja not_active Expired - Fee Related
- 1996-04-02 KR KR1019960009824A patent/KR100394517B1/ko not_active IP Right Cessation
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TW348274B (en) | 1998-12-21 |
DE69623679D1 (de) | 2002-10-24 |
JP2007096353A (ja) | 2007-04-12 |
JPH08279552A (ja) | 1996-10-22 |
KR960036914A (ko) | 1996-11-19 |
US5786263A (en) | 1998-07-28 |
EP0736897B1 (en) | 2002-09-18 |
EP0736897A3 (en) | 1998-03-11 |
EP0736897A2 (en) | 1996-10-09 |
KR100394517B1 (ko) | 2003-10-17 |
DE69623679T2 (de) | 2003-05-22 |
JP4416843B2 (ja) | 2010-02-17 |
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