JP4164874B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4164874B2 JP4164874B2 JP2004162055A JP2004162055A JP4164874B2 JP 4164874 B2 JP4164874 B2 JP 4164874B2 JP 2004162055 A JP2004162055 A JP 2004162055A JP 2004162055 A JP2004162055 A JP 2004162055A JP 4164874 B2 JP4164874 B2 JP 4164874B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 230000017525 heat dissipation Effects 0.000 claims description 11
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 6
- 230000005855 radiation Effects 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004088 foaming agent Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 230000009365 direct transmission Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Description
図1に示すように、本発明の半導体装置では、第1の半導体素子としてのスイッチング素子、例えばMOSFET(1)の一方の主面(1a)が導電性の接着剤又は半田(10)により支持板(3)上に固着される。支持板(3)は、ニッケルメッキされた銅又はアルミニウム等の放熱性及び導電性を有する金属により形成され、MOSFET(1)の主電極、即ちドレイン電極が支持板(3)に電気的に接続される。支持板(3)とは反対側のMOSFET(1)の他方の主面(1b)上には、他方の主電極即ちソース電極が形成され、導電性の接着剤又は半田(11)により連結リード(4)が固着される。
Claims (3)
- 放熱性及び導電性を有する支持板と、該支持板に固着され且つ前記支持板に電気的に接続された一方の主面を有する第1の半導体素子と、前記第1の半導体素子の他方の主面に固着され且つ前記第1の半導体素子の他方の主面上に電気的に接続された一方の主面を有する連結リードと、該連結リードの他方の主面に固着された第2の半導体素子と、前記支持板の周辺に配置された複数のリード端子とを備え、
前記連結リードは、放熱性及び導電性を有すると共に、複数の前記リード端子の少なくとも一つと前記第1の半導体素子の他方の主面との間を架橋しかつ電気的に接続し、
前記連結リードの他方の主面上に絶縁性を有する被覆体が設けられ、
前記被覆体は、前記連結リードの他方の主面と前記第2の半導体素子との間に配置される絶縁層と断熱層とを有することを特徴とする半導体装置。 - 前記絶縁層は、気泡の含有率が相対的に少ない誘電体膜からなり、前記断熱層は、相対的に気泡の多い誘電体膜からなる請求項1に記載の半導体装置。
- 前記連結リードを跨ぐリード細線により前記第1の半導体素子と前記第2の半導体素子とを接続し、前記第2の半導体素子の駆動信号により前記第1の半導体素子の動作を制御する請求項1又は2のいずれかに記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004162055A JP4164874B2 (ja) | 2004-05-31 | 2004-05-31 | 半導体装置 |
CNB2005800039424A CN100461404C (zh) | 2004-05-31 | 2005-03-28 | 半导体器件 |
US10/592,444 US7382000B2 (en) | 2004-05-31 | 2005-03-28 | Semiconductor device |
PCT/JP2005/005690 WO2005117116A1 (ja) | 2004-05-31 | 2005-03-28 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004162055A JP4164874B2 (ja) | 2004-05-31 | 2004-05-31 | 半導体装置 |
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Publication Number | Publication Date |
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JP2005347327A JP2005347327A (ja) | 2005-12-15 |
JP4164874B2 true JP4164874B2 (ja) | 2008-10-15 |
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JP2004162055A Expired - Fee Related JP4164874B2 (ja) | 2004-05-31 | 2004-05-31 | 半導体装置 |
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US (1) | US7382000B2 (ja) |
JP (1) | JP4164874B2 (ja) |
CN (1) | CN100461404C (ja) |
WO (1) | WO2005117116A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP4135101B2 (ja) * | 2004-06-18 | 2008-08-20 | サンケン電気株式会社 | 半導体装置 |
DE102007002807B4 (de) | 2007-01-18 | 2014-08-14 | Infineon Technologies Ag | Chipanordnung |
JP5298473B2 (ja) * | 2007-07-23 | 2013-09-25 | 富士電機株式会社 | 半導体装置 |
JP2009295959A (ja) * | 2008-05-09 | 2009-12-17 | Panasonic Corp | 半導体装置及びその製造方法 |
JP5842109B2 (ja) * | 2012-02-23 | 2016-01-13 | パナソニックIpマネジメント株式会社 | 樹脂封止型半導体装置及びその製造方法 |
DE102015200480A1 (de) | 2015-01-14 | 2016-07-14 | Robert Bosch Gmbh | Kontaktanordnung und Leistungsmodul |
CN114975302A (zh) * | 2016-12-27 | 2022-08-30 | 新唐科技日本株式会社 | 半导体装置 |
JP7156230B2 (ja) * | 2019-10-02 | 2022-10-19 | 株式会社デンソー | 半導体モジュール |
CN113571507A (zh) * | 2021-03-16 | 2021-10-29 | 广东汇芯半导体有限公司 | 智能功率模块和智能功率模块的制造方法 |
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JPH0493159A (ja) | 1990-08-09 | 1992-03-25 | Daishowa Seiki Co Ltd | 工具ホルダ |
JP2543452Y2 (ja) * | 1990-12-21 | 1997-08-06 | 富士通テン株式会社 | 半導体装置 |
US5739581A (en) * | 1995-11-17 | 1998-04-14 | National Semiconductor Corporation | High density integrated circuit package assembly with a heatsink between stacked dies |
US6054754A (en) * | 1997-06-06 | 2000-04-25 | Micron Technology, Inc. | Multi-capacitance lead frame decoupling device |
KR100335481B1 (ko) | 1999-09-13 | 2002-05-04 | 김덕중 | 멀티 칩 패키지 구조의 전력소자 |
JP4036694B2 (ja) * | 2002-03-28 | 2008-01-23 | シャープ株式会社 | 積層型半導体装置 |
JP2004146628A (ja) * | 2002-10-25 | 2004-05-20 | Sanyo Electric Co Ltd | 半導体装置 |
-
2004
- 2004-05-31 JP JP2004162055A patent/JP4164874B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-28 WO PCT/JP2005/005690 patent/WO2005117116A1/ja active Application Filing
- 2005-03-28 US US10/592,444 patent/US7382000B2/en not_active Expired - Fee Related
- 2005-03-28 CN CNB2005800039424A patent/CN100461404C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US20070158682A1 (en) | 2007-07-12 |
CN1914728A (zh) | 2007-02-14 |
JP2005347327A (ja) | 2005-12-15 |
US7382000B2 (en) | 2008-06-03 |
WO2005117116A1 (ja) | 2005-12-08 |
CN100461404C (zh) | 2009-02-11 |
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