JP4110175B2 - アークイオンプレーティング方法 - Google Patents
アークイオンプレーティング方法 Download PDFInfo
- Publication number
- JP4110175B2 JP4110175B2 JP2006079255A JP2006079255A JP4110175B2 JP 4110175 B2 JP4110175 B2 JP 4110175B2 JP 2006079255 A JP2006079255 A JP 2006079255A JP 2006079255 A JP2006079255 A JP 2006079255A JP 4110175 B2 JP4110175 B2 JP 4110175B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- arc ion
- ion plating
- plating method
- arc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32614—Consumable cathodes for arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
1a…ガス導入口
1b…真空排気口
2…被処理物(ワーク)
3,3’…ターゲット
31,31’…上ターゲット
32,32’…下ターゲット
33,33’…中央ターゲット
4…回転テーブル
5…永久磁石
6…磁石昇降装置
7…アーク電源
8…アーク点火機構
10…連結リング
11…上フランジ
12…下フランジ
13…有底中空シャフト
14…ナット
15…冷却水排水路
16…絶縁部材
17…パワーケーブル
Claims (5)
- 真空チャンバ内に円筒状のターゲットと被処理物とを配置し、前記ターゲットを陰極とする真空アーク放電によってターゲット物質を蒸発させるとともにイオン化し、ターゲット物質イオンを前記被処理物に導いて皮膜形成を行うアークイオンプレーティング方法において、前記ターゲットが、少なくとも長手方向両端部とそれ以外の中央部とに分割可能に構成されており、ターゲット表面のアークスポット位置を制御することで前記長手方向両端部の消耗速度を前記中央部の消耗速度より速くして被処理物に皮膜形成を行うに際して、未使用時における長手方向に垂直方向の断面形状寸法がターゲット全長にわたって略同一とされたターゲットでアークイオンプレーティングを行った後、該ターゲットの少なくとも中央部が消耗限界に達するまでは、消耗速度の速い前記長手方向両端部のみを、前記中央部と前記長手方向両端部を同径にて連結可能なように、前記長手方向両端部に先細りテーパ部が形成されたものと交換して皮膜形成を行うことを特徴とするアークイオンプレーティング方法。
- 前記ターゲットの長手方向両端部と中央部とが、該ターゲットを内側から連結する連結リングによって互いに連結されることを特徴とする請求項1記載のアークイオンプレーティング方法。
- 前記ターゲットが、シャフトの外側に嵌められるとともに上下のフランジに挟まれた状態で、前記シャフトの下端に取り付けられるナットによって固定されることを特徴とする請求項1又は2記載のアークイオンプレーティング方法。
- 前記シャフトが、下端部に孔を備えた有底中空状であり、前記ターゲットを冷却する冷却水が、前記有底中空状のシャフトに導かれて下方に流れ、前記孔を通って上方に流れることで、前記円筒状のターゲットを内側から冷却することを特徴とする請求項3記載のアークイオンプレーティング方法。
- 前記ターゲットを長手方向両端部と中央部との3つの部分に分割可能に構成し、長手方向両端部の消耗速度を中央部の消耗速度の整数倍に設定し、消耗速度の遅い中央部の消耗限界による交換時期と先に交換された消耗速度の速い長手方向両端部の消耗限界による交換時期とが重なるようにすることを特徴する請求項1〜4のいずれか1項に記載のアークイオンプレーティング方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006079255A JP4110175B2 (ja) | 2006-03-22 | 2006-03-22 | アークイオンプレーティング方法 |
US12/279,555 US8133365B2 (en) | 2006-03-22 | 2007-03-06 | Method of arc ion plating and target for use therein |
CN2007800099617A CN101405428B (zh) | 2006-03-22 | 2007-03-06 | 电弧离子镀方法以及该方法中使用的靶材 |
EP07737836.2A EP1997932A4 (en) | 2006-03-22 | 2007-03-06 | ARC FLASHING TECHNIQUE AND TARGET USED THEREOF |
KR1020087022839A KR101027879B1 (ko) | 2006-03-22 | 2007-03-06 | 아크 이온 플레이팅 방법 및 이것에 사용되는 타겟 |
PCT/JP2007/054286 WO2007108313A1 (ja) | 2006-03-22 | 2007-03-06 | アークイオンプレーティング方法及びこれに用いられるターゲット |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006079255A JP4110175B2 (ja) | 2006-03-22 | 2006-03-22 | アークイオンプレーティング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007254802A JP2007254802A (ja) | 2007-10-04 |
JP4110175B2 true JP4110175B2 (ja) | 2008-07-02 |
Family
ID=38522346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006079255A Expired - Fee Related JP4110175B2 (ja) | 2006-03-22 | 2006-03-22 | アークイオンプレーティング方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8133365B2 (ja) |
EP (1) | EP1997932A4 (ja) |
JP (1) | JP4110175B2 (ja) |
KR (1) | KR101027879B1 (ja) |
CN (1) | CN101405428B (ja) |
WO (1) | WO2007108313A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI379916B (en) * | 2009-02-24 | 2012-12-21 | Ind Tech Res Inst | Vacuum coating device and coating method |
CN101886248B (zh) * | 2009-05-15 | 2013-08-21 | 鸿富锦精密工业(深圳)有限公司 | 溅镀式镀膜装置 |
US20120193227A1 (en) * | 2011-02-02 | 2012-08-02 | Tryon Brian S | Magnet array for a physical vapor deposition system |
US20120193226A1 (en) * | 2011-02-02 | 2012-08-02 | Beers Russell A | Physical vapor deposition system |
US20120193217A1 (en) * | 2011-02-02 | 2012-08-02 | Tryon Brian S | Segmented post cathode |
CN103031524B (zh) * | 2012-12-14 | 2014-11-05 | 中国船舶重工集团公司第七二五研究所 | 一种离子沉积实现ito靶材背面金属化的方法 |
JP5941016B2 (ja) * | 2013-05-27 | 2016-06-29 | 株式会社神戸製鋼所 | 成膜装置およびそれを用いた成膜方法 |
KR101862967B1 (ko) * | 2014-03-18 | 2018-07-04 | 캐논 아네르바 가부시키가이샤 | 성막 장치 |
CN107614743B (zh) * | 2015-05-19 | 2019-10-22 | 株式会社爱发科 | 磁控溅射装置用的旋转阴极单元 |
SG11202006091UA (en) * | 2017-12-27 | 2020-07-29 | Canon Anelva Corp | Deposition method and deposition apparatus |
KR102145945B1 (ko) | 2018-11-30 | 2020-08-21 | 한국생산기술연구원 | 다성분계 코팅막 복합 증착장치 |
WO2021007223A1 (en) | 2019-07-07 | 2021-01-14 | Selfie Snapper, Inc. | Selfie camera |
CA3163370A1 (en) | 2019-12-31 | 2021-07-08 | Denis Koci | Electroadhesion device with voltage control module |
USD939607S1 (en) | 2020-07-10 | 2021-12-28 | Selfie Snapper, Inc. | Selfie camera |
KR102509946B1 (ko) * | 2022-07-11 | 2023-03-14 | 국형원 | 아크이온 증착장치 |
KR102509947B1 (ko) * | 2022-07-20 | 2023-03-14 | 국형원 | 아크이온 증착장치 |
CN116334536A (zh) * | 2023-03-29 | 2023-06-27 | 东北大学 | 一种高韧性过渡族金属氮化物TiAl(Ni)NX硬质涂层及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60181268A (ja) | 1984-02-29 | 1985-09-14 | Hitachi Ltd | スパツタリングタ−ゲツト |
DE69416963T2 (de) * | 1993-12-17 | 1999-09-16 | Kobe Steel Ltd | Vorrichtung zur Bogenbeschichtung im Vakuum |
CZ293777B6 (cs) * | 1999-03-24 | 2004-07-14 | Shm, S. R. O. | Otěruvzdorný povlak |
US6436252B1 (en) * | 2000-04-07 | 2002-08-20 | Surface Engineered Products Corp. | Method and apparatus for magnetron sputtering |
JP4015874B2 (ja) * | 2002-04-11 | 2007-11-28 | 株式会社神戸製鋼所 | アークイオンプレーティング用ロッド形蒸発源 |
JP4014982B2 (ja) * | 2002-09-19 | 2007-11-28 | 株式会社神戸製鋼所 | アーク蒸発源用のロッドターゲット、その製造方法及びアーク蒸着装置 |
-
2006
- 2006-03-22 JP JP2006079255A patent/JP4110175B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-06 WO PCT/JP2007/054286 patent/WO2007108313A1/ja active Application Filing
- 2007-03-06 KR KR1020087022839A patent/KR101027879B1/ko not_active IP Right Cessation
- 2007-03-06 CN CN2007800099617A patent/CN101405428B/zh not_active Expired - Fee Related
- 2007-03-06 US US12/279,555 patent/US8133365B2/en not_active Expired - Fee Related
- 2007-03-06 EP EP07737836.2A patent/EP1997932A4/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO2007108313A1 (ja) | 2007-09-27 |
EP1997932A4 (en) | 2016-07-20 |
EP1997932A1 (en) | 2008-12-03 |
CN101405428B (zh) | 2012-08-01 |
US8133365B2 (en) | 2012-03-13 |
KR20080095300A (ko) | 2008-10-28 |
JP2007254802A (ja) | 2007-10-04 |
CN101405428A (zh) | 2009-04-08 |
KR101027879B1 (ko) | 2011-04-07 |
US20090065348A1 (en) | 2009-03-12 |
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