JP4079271B2 - 磁気抵抗センサの製造方法 - Google Patents
磁気抵抗センサの製造方法 Download PDFInfo
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- JP4079271B2 JP4079271B2 JP2003581177A JP2003581177A JP4079271B2 JP 4079271 B2 JP4079271 B2 JP 4079271B2 JP 2003581177 A JP2003581177 A JP 2003581177A JP 2003581177 A JP2003581177 A JP 2003581177A JP 4079271 B2 JP4079271 B2 JP 4079271B2
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- Prior art keywords
- electrode layer
- film
- island
- resist pattern
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Hall/Mr Elements (AREA)
Description
情報処理、通信、磁気記録、光記録などの各分野で用いられる殆どのデバイスに於いて、間に絶縁体が介装された2つの導体の電気的接続を得るために、絶縁体に円形の穴(コンタクトホール)が設けられている。このコンタクトホールは、デバイスの微細加工に適しているドライエッチングで形成するのが一般的である。
一般に、スパッタ法を用いた金属薄膜形成の初期過程では、金属は不連続な島構造を呈することが知られている。絶縁体マトリックス中にnmオーダーの島状金属が分散している不連続構造膜の例としてCo/SiO2膜がある。熱酸化Si基板上にスパッタ法を用いて作成したCo1.5nm/SiO220nmの透過型電子顕微鏡写真の平面像、断面像をそれぞれ図4(a)及び図4(b)に示す。
Claims (4)
- 磁気抵抗センサの製造方法であって、
下部電極層を成膜し、
前記下部電極層上に面内方向に分散配置される複数個の島状金属を形成し、
前記複数個の島状金属を形成した後、該島状金属を埋め込むように前記下部電極層上に絶縁体を成膜して導通路層を形成し、
前記導通路層上にレジストパターンを形成し、
前記レジストパターンをマスクとして、前記導通路層を部分的にエッチングして前記複数個の島状金属を露出させ、
前記導通路層上に磁気抵抗膜を成膜し、
前記磁気抵抗膜上に上部電極層を成膜する、
各ステップを具備したことを特徴とする磁気抵抗センサの製造方法。 - 磁気抵抗センサの製造方法であって、
下部電極層を成膜し、
前記下部電極層上に第1レジストパターンを形成し、
該第1レジストパターンをマスクとしてエッチングすることにより、所望形状の下部電極層を得、
前記下部電極層上に面内方向に分散配置される複数個の島状金属を形成し、
前記複数個の島状金属を埋め込むように前記下部電極層上に絶縁体マトリックスを成膜して不連続構造膜を形成し、
前記不連続構造膜上に第2レジストパターンを形成し、
該第2レジストパターンをマスクとしたエッチングにより、前記不連続構造膜の不用部を除去し、
前記不連続構造膜上に第3レジストパターンを形成し、
該第3レジストパターンをマスクとして、前記複数個の島状金属の頂部が露出するまで前記不連続構造膜の中央領域をエッチングし、
前記不連続構造膜上に磁気抵抗膜を成膜し、
前記磁気抵抗膜上に上部電極層を成膜し、
前記上部電極層上に第4レジストパターンを形成し、
該第4レジストパターンをマスクとしたエッチングにより、所望形状の上部電極層を得る、
各ステップからなることを特徴とする磁気抵抗センサの製造方法。 - 前記島状金属はCrから形成され、前記絶縁体マトリックスはSiO2から形成される請求項2記載の磁気抵抗センサの製造方法。
- 前記複数個の島状金属は、スパッタ法により形成される請求項2記載の磁気抵抗センサの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2002/003119 WO2003083838A1 (fr) | 2002-03-28 | 2002-03-28 | Capteur de resistance magnetique et son procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2003083838A1 JPWO2003083838A1 (ja) | 2005-08-04 |
JP4079271B2 true JP4079271B2 (ja) | 2008-04-23 |
Family
ID=28470397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003581177A Expired - Fee Related JP4079271B2 (ja) | 2002-03-28 | 2002-03-28 | 磁気抵抗センサの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7215515B2 (ja) |
JP (1) | JP4079271B2 (ja) |
WO (1) | WO2003083838A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6937447B2 (en) * | 2001-09-19 | 2005-08-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory |
US7914915B2 (en) * | 2007-03-06 | 2011-03-29 | The United States of America as represented by the Secretary of the Commerce, The National Institutes of Standards and Technology | Highly charged ion modified oxide device and method of making same |
US11350853B2 (en) | 2018-10-02 | 2022-06-07 | Under Armour, Inc. | Gait coaching in fitness tracking systems |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6064552A (en) * | 1997-03-18 | 2000-05-16 | Kabushiki Kaisha Toshiba | Magnetoresistive head having magnetic yoke and giant magnetoresistive element such that a first electrode is formed on the giant magnetoresistive element which in turn is formed on the magnetic yoke which acts as a second electrode |
JP3593463B2 (ja) * | 1998-09-11 | 2004-11-24 | 株式会社東芝 | 強磁性トンネル効果素子およびそれを用いた磁気装置 |
JP2001143227A (ja) * | 1999-11-18 | 2001-05-25 | Fujitsu Ltd | 磁気センサ |
JP3647736B2 (ja) * | 2000-09-29 | 2005-05-18 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
US6937447B2 (en) * | 2001-09-19 | 2005-08-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory |
JP2003142755A (ja) * | 2001-11-05 | 2003-05-16 | Fujitsu Ltd | 磁気抵抗センサ及びその製造方法 |
US6972146B2 (en) * | 2002-03-15 | 2005-12-06 | Canon Kabushiki Kaisha | Structure having holes and method for producing the same |
JP2004095110A (ja) * | 2002-09-03 | 2004-03-25 | Hitachi Ltd | 部分的な電流絞込層を備えたスピンバルブ型磁気ヘッド及びその製造方法、ならびにその電流絞込方法 |
US7450348B2 (en) * | 2003-06-25 | 2008-11-11 | Panasonic Corporation | Electronic device, magnetoresistance effect element; magnetic head, recording/reproducing apparatus, memory element and manufacturing method for electronic device |
US7061725B2 (en) * | 2003-12-01 | 2006-06-13 | Seagate Technology Llc | Magnetic read sensor with stripe width and stripe height control |
US7093347B2 (en) * | 2003-12-05 | 2006-08-22 | Seagate Technology Llc | Method of making a current-perpendicular to the plane (CPP) magnetoresistive (MR) sensor |
-
2002
- 2002-03-28 WO PCT/JP2002/003119 patent/WO2003083838A1/ja active Application Filing
- 2002-03-28 JP JP2003581177A patent/JP4079271B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-27 US US10/950,722 patent/US7215515B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPWO2003083838A1 (ja) | 2005-08-04 |
US20050036243A1 (en) | 2005-02-17 |
US7215515B2 (en) | 2007-05-08 |
WO2003083838A1 (fr) | 2003-10-09 |
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