JP4072620B2 - Zinc oxide ultrafine particles and method for producing zinc oxide ultrafine particles - Google Patents
Zinc oxide ultrafine particles and method for producing zinc oxide ultrafine particles Download PDFInfo
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims description 98
- 239000011882 ultra-fine particle Substances 0.000 title claims description 51
- 239000011787 zinc oxide Substances 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 14
- 239000011701 zinc Substances 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 238000010891 electric arc Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 206010021143 Hypoxia Diseases 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
本発明は、欠陥が少なく高純度な酸化亜鉛超微粒子および酸化亜鉛超微粒子の製造方法に関し、特に、低純度な原料を用いた高品質な酸化亜鉛超微粒子および窒素アクセプタを含んだ酸化亜鉛超微粒子、並びに、その製造方法に関する。 The present invention relates to a high-purity zinc oxide ultrafine particle with few defects and a method for producing the zinc oxide ultrafine particle, and in particular, a high-quality zinc oxide ultrafine particle using a low-purity raw material and a zinc oxide ultrafine particle containing a nitrogen acceptor. And a manufacturing method thereof.
従来、酸化亜鉛の微粒子は酸素欠損に起因する欠陥による緑色の発光を利用した蛍光材料などに利用されていた。また、理論的には励起子による紫外線発光特性も備えるため、これを実現すべく、所定の基板上に結晶性の良い単結晶薄膜を成長させる研究もなされている。その結果、ＭＢＥ法（分子線エピタキシャル成長法）により、高純度な原料を用いて酸化亜鉛の単結晶薄膜の成長過程で窒素をドーピングすることにより、キャリア濃度は十分ではないがｐ型薄膜を製造することが可能となっている。 Conventionally, zinc oxide fine particles have been used for fluorescent materials utilizing green light emission due to defects caused by oxygen deficiency. Also, theoretically, since it has ultraviolet light emission characteristics by excitons, research to grow a single crystal thin film with good crystallinity on a predetermined substrate has been made to realize this. As a result, by doping with nitrogen in the growth process of a single crystal thin film of zinc oxide using a high-purity raw material by MBE (molecular beam epitaxial growth method), a p-type thin film is produced although the carrier concentration is not sufficient. It is possible.
しかしながら、従来の技術では以下の問題点があった。
すなわち、ＭＢＥ法は実験ないし研究段階に適した製造方法であり、量産には適さないという問題点があった。具体的には、電気的に活性な不純物を低減させるために原料全てに高純度が要求され、例えば、６Ｎ〜７Ｎ（純度９９．９９９９％〜９９．９９９９９％）の純度が必要であるという問題点があった。また、装置も大がかりであり、原料単価とも相まって、製造コストが極めて高いという問題点もあった。
However, the conventional technique has the following problems.
That is, the MBE method is a manufacturing method suitable for the experiment or research stage, and has a problem that it is not suitable for mass production. Specifically, in order to reduce electrically active impurities, all the raw materials are required to have high purity, for example, a purity of 6N to 7N (purity 99.9999% to 99.99999%) is required. There was a point. In addition, the apparatus is large-scale and there is a problem that the manufacturing cost is extremely high in combination with the raw material unit price.
この他、ＣＶＤ法により超微粒子を製造する方法も知られているが、やはり装置が大がかりであって、原料の純度管理が難しいことや製造コストが高いという問題点もある。 In addition, a method for producing ultrafine particles by the CVD method is also known, but there are also problems that the apparatus is large and the purity control of the raw materials is difficult and the production cost is high.
一方、素材の観点からは、酸化亜鉛は大気中で安定、安価、短波長の光と相互作用することが可能であるといった従来の半導体にない利点を持っている。したがって、半導体としての物性を発揮できる結晶性の良い酸化亜鉛が望まれている。 On the other hand, from the viewpoint of materials, zinc oxide has advantages not found in conventional semiconductors, such as being stable in the atmosphere, inexpensive, and capable of interacting with light of short wavelengths. Therefore, zinc oxide with good crystallinity that can exhibit physical properties as a semiconductor is desired.
本発明は上記に鑑みてなされたものであって、ｐ型伝導や紫外線発光など半導体としての物性を発揮できる結晶性の良い高品質な酸化亜鉛超微粒子を提供することを目的とする。 The present invention has been made in view of the above, and an object of the present invention is to provide high-quality zinc oxide ultrafine particles with good crystallinity that can exhibit physical properties as a semiconductor such as p-type conduction and ultraviolet light emission.
また、上述の高品質な酸化亜鉛超微粒子を、低純度な素材から安価に製造する製造方法を提供することを目的とする。 Moreover, it aims at providing the manufacturing method which manufactures the above-mentioned high quality zinc oxide ultrafine particle from a low purity raw material at low cost.
上記の目的を達成するために、請求項１に記載の酸化亜鉛超微粒子は、結晶中の窒素濃度が１０１６ｃｍ−３〜１０２０ｃｍ−３であって、粒子径が５０ｎｍ〜２００ｎｍの酸化亜鉛超微粒子である。 In order to achieve the above object, the zinc oxide ultrafine particles according to claim 1, the nitrogen concentration in the crystal is 10 16 cm −3 to 10 20 cm −3 and the particle diameter is 50 nm to 200 nm. Zinc ultrafine particles.
また、請求項２に記載の酸化亜鉛超微粒子は、請求項１に記載の酸化亜鉛超微粒子において、室温で３７５ｎｍ付近の蛍光を示し、可視光域の蛍光強度の積分値が紫外光域の発光強度の積分値の１００分の一以下である酸化亜鉛超微粒子である。ここにいう酸化亜鉛超微粒子は、酸素欠損のない微粒子ということもできる。 Moreover, the zinc oxide ultrafine particles according to claim 2 are the zinc oxide ultrafine particles according to claim 1, exhibiting fluorescence around 375 nm at room temperature, and the integrated value of the fluorescence intensity in the visible light region is emission in the ultraviolet light region. It is a zinc oxide ultrafine particle which is 1/100 or less of the integral value of intensity. The zinc oxide ultrafine particles mentioned here can also be referred to as fine particles having no oxygen deficiency.
また、請求項３に記載の酸化亜鉛超微粒子は、請求項１または２に記載の酸化亜鉛超微粒子において、極低温にて波長３６８ｎｍ付近で観測されるドナーに基づく発光強度に比して、波長３７５ｎｍ付近で観測されるアクセプタに基づく発光強度が３倍以上大きな酸化亜鉛超微粒子である。 Further, the zinc oxide ultrafine particles according to claim 3 have a wavelength that is higher than that of the zinc oxide ultrafine particles according to claim 1 or 2 compared to the emission intensity based on a donor observed at a wavelength of about 368 nm at a very low temperature. It is zinc oxide ultrafine particles whose emission intensity based on the acceptor observed at around 375 nm is three times or more.
また、請求項４に記載の酸化亜鉛超微粒子製造方法は、酸素ガスと窒素ガスとを含む混合ガスを雰囲気ガスとし、その中でアーク放電を用いて亜鉛を加熱して蒸発させ、亜鉛蒸発量が過多となり酸素欠損の存在する超微粒子とならないように亜鉛蒸発量を抑制することにより請求項１〜３のいずれか一つに記載の酸化亜鉛超微粒子を製造する方法である。 The method for producing ultrafine zinc oxide particles according to claim 4 is characterized in that a mixed gas containing oxygen gas and nitrogen gas is used as an atmospheric gas, in which zinc is heated and evaporated using arc discharge, The method of producing ultrafine zinc oxide particles according to any one of claims 1 to 3, wherein the amount of zinc evaporation is suppressed so as not to cause excessive ultrafine particles having oxygen deficiency.
また、請求項５に記載の酸化亜鉛超微粒子製造方法は、請求項４に記載の酸化亜鉛超微粒子製造方法において、純度９９．９９％以下の亜鉛を用いる製造方法である。 The zinc oxide ultrafine particle production method according to claim 5 is the production method using zinc having a purity of 99.99% or less in the zinc oxide ultrafine particle production method according to claim 4.
また、請求項６に記載の酸化亜鉛超微粒子製造方法は、請求項４または5に記載の酸化亜鉛超微粒子製造方法において、雰囲気ガスとして精製しない空気を用いる製造方法である。 Further, the zinc oxide ultrafine particle production method according to claim 6 is the production method using the unpurified air as the atmospheric gas in the zinc oxide ultrafine particle production method according to claim 4 or 5.
なお、本願では、超微粒子とは、その平均的な大きさがμｍ（１×１０−６ｍ）オーダー未満であることを意味する。また、超微粒子の形状は必ずしも球形を意味せず、直方体形や長径短径の比が大きな楕円体形であってもよく、更には針状結晶が含まれていても良いものとする。また、酸化亜鉛超微粒子とは、微粒子自体が一個の単結晶から構成されていることを必ずしも意味せず、複数のブロックに別れた単結晶の集合体であっても良いものとする。 In the present application, the ultrafine particles mean that the average size is less than μm (1 × 10 −6 m) order. Further, the shape of the ultrafine particles does not necessarily mean a spherical shape, but may be a rectangular parallelepiped shape or an ellipsoidal shape having a large major axis / minor axis ratio, and may further include a needle crystal. The zinc oxide ultrafine particles do not necessarily mean that the fine particles themselves are composed of one single crystal, and may be an aggregate of single crystals divided into a plurality of blocks.
また、可視光域とは、人間が関知できる光の波長範囲をいい、具体的には４００ｎｍ程度〜７００ｎｍ程度をいう。また、紫外光域とは、可視光域より短波長側の波長範囲をいい、具体的には４００ｎｍ未満をいう。 Further, the visible light region refers to a wavelength range of light that can be recognized by humans, and specifically refers to about 400 nm to about 700 nm. Further, the ultraviolet light region refers to a wavelength range on the shorter wavelength side than the visible light region, specifically, less than 400 nm.
また、極低温とは、１０K程度以下の温度をいい、熱エネルギーが無視できる温度レベルであることを意味する。 The cryogenic temperature refers to a temperature of about 10K or lower, and means a temperature level at which thermal energy can be ignored.
酸素ガスと窒素ガスを含む混合ガスは、例えば空気と同様の４：１のモル比のガスを用意しても良いし、製造室中の空気を直接使用しても良いものとする。なお、混合ガスのうち、酸素は３ｖｏｌ％〜５０ｖｏｌ％とすることができる。これは、３％ｖｏｌ％未満だと酸素欠損が生じ易く、５０％以上だとアーク放電が不安定になるからである。また、混合ガスのうち、窒素は５ｖｏｌ％〜９７ｖｏｌ％とすることができる。これは、５％未満だと超微粒子中の窒素の混入が少なくなるからである。なお、酸素ガスと窒素ガスだけを用いる場合はこれらの合計が１００ｖｏｌ％となるように調整すればよいが、この他、合計が１００ｖｏｌ％となるのであれば、アルゴンやヘリウムなどの不活性ガスを含んでも良いものとする。 As the mixed gas containing oxygen gas and nitrogen gas, for example, a gas having a molar ratio of 4: 1 similar to air may be prepared, or the air in the manufacturing chamber may be used directly. In addition, oxygen can be 3 vol%-50 vol% among mixed gas. This is because if it is less than 3% vol%, oxygen deficiency tends to occur, and if it is 50% or more, arc discharge becomes unstable. Moreover, nitrogen can be 5 vol%-97 vol% among mixed gas. This is because if it is less than 5%, the amount of nitrogen in the ultrafine particles is reduced. Note that when only oxygen gas and nitrogen gas are used, the total of these may be adjusted to 100 vol%, but in addition, if the total is 100 vol%, an inert gas such as argon or helium is used. It may be included.
なお、混合ガスの総圧は、ガス中蒸発法による場合にはアーク放電を生じ易くするため、例えば、２０×１０３［Ｐａ］とすることができる。ただし、混合ガスの構成比とその圧力、印加電圧、電極間の距離などの関係は、酸素欠損により亜鉛そのものが微粒子中に残存してしまわない組合せであればよいものとする。 Note that the total pressure of the mixed gas can be set to, for example, 20 × 10 3 [Pa] in order to easily generate arc discharge in the case of the gas evaporation method. However, the composition ratio of the mixed gas and the relationship between the pressure, the applied voltage, the distance between the electrodes, and the like may be any combination in which zinc itself does not remain in the fine particles due to oxygen deficiency.
また、加熱して蒸発させる方法としては、例えばアーク放電を用いる方法（以下の実施例でもアーク放電を利用したガス中蒸発法を用いた製造例を説明する）を挙げることができる。 Moreover, as a method of evaporating by heating, for example, a method using arc discharge (a manufacturing example using an in-gas evaporation method using arc discharge is also described in the following examples) can be mentioned.
また、純度９９．９９％以下とは、特にその下限を設定しないが、不純物が超微粒子の生成に影響を与えず、また、半導体としての性質の観点から見て影響を与えないレベルをいう。 The purity of 99.99% or less means a level at which the lower limit is not particularly set, but the impurity does not affect the generation of ultrafine particles and does not affect from the viewpoint of the properties as a semiconductor.
また、酸素欠損のないとは、フォトルミネッセンス法による評価で酸素欠損に起因する５００ｎｍ前後の可視光の蛍光強度がバンド端発光による紫外光の１００分の一以下であるような結晶を意味する。 Further, the absence of oxygen deficiency means a crystal in which the fluorescence intensity of visible light around 500 nm due to oxygen deficiency is 1/100 or less of ultraviolet light due to band edge emission, as evaluated by a photoluminescence method.
本発明により、ｐ型伝導や紫外線発光など半導体としての物性を発揮できる結晶性の良い高品質な酸化亜鉛超微粒子を提供可能となる。 According to the present invention, it is possible to provide high-quality zinc oxide ultrafine particles with good crystallinity that can exhibit physical properties as a semiconductor such as p-type conduction and ultraviolet light emission.
また、この高品質な酸化亜鉛超微粒子を、低純度な素材から安価に製造する製造方法を提供可能となる。 In addition, it is possible to provide a manufacturing method for manufacturing the high-quality zinc oxide ultrafine particles at low cost from a low-purity material.
本実施例では酸化亜鉛超微粒子の作製にあたってガス中蒸発法を用いた例を説明する。超微粒子の生成には、真空冶金製ＧＥ−９７０を使用した。図１は、本実施例で使用した装置の概略構成を示した図である。 In this embodiment, an example in which an in-gas evaporation method is used for producing zinc oxide ultrafine particles will be described. GE-970 made by vacuum metallurgy was used for the production of ultrafine particles. FIG. 1 is a diagram showing a schematic configuration of an apparatus used in this embodiment.
超微粒子の作製手順としては、まずチャンバー内を真空に引き、ここに原料ガスである空気（特に精製しない空気）を２０×１０３［Ｐａ］の圧力となるまで流入した。続いて、カーボン電極と導電性のハースの上にセットした原料であるＺｎインゴット（純度４N：９９．９９％）との間でアーク放電を発生させ、Ｚｎを連続的に蒸発させた。 As a procedure for producing the ultrafine particles, first, the inside of the chamber was evacuated, and air as a raw material gas (in particular, air that was not purified) was introduced until the pressure reached 20 × 10 3 [Pa]. Subsequently, arc discharge was generated between the carbon electrode and a Zn ingot (purity 4N: 99.99%) which is a raw material set on the conductive hearth, and Zn was continuously evaporated.
このとき、Ｚｎがチャンバー内の酸素と反応してＺｎＯ超微粒子が生成される。生成された超微粒子はチャンバーの壁面に付着した。なお、以降の評価測定については、この壁面に付着した酸化亜鉛の超微粒子を用いた。 At this time, Zn reacts with oxygen in the chamber to produce ZnO ultrafine particles. The produced ultrafine particles adhered to the wall surface of the chamber. In the subsequent evaluation measurement, ultrafine particles of zinc oxide adhered to the wall surface were used.
電流値を変化させ、アーク放電が生じた際の電圧と、放電時間の関係を表１に示す。
評価はＳＥＭ（走査型電子顕微鏡）による観察と、フォトルミネッセンスによる発光特性測定をおこなった。 The evaluation was performed by observation with an SEM (scanning electron microscope) and measurement of light emission characteristics by photoluminescence.
まず、ＳＥＭ写真を示す。図２は、条件２により作製した酸化亜鉛超微粒子を写したＳＥＭ写真である。図から明らかなように、作製された超微粒子は１００ｎｍ径×２００ｎｍ程度の柱状の粒子であることが確認できた。 First, an SEM photograph is shown. FIG. 2 is an SEM photograph showing the zinc oxide ultrafine particles produced under condition 2. As is apparent from the figure, it was confirmed that the produced ultrafine particles were columnar particles having a diameter of about 100 nm × 200 nm.
次に、発光特性の測定結果を図３、図４、および、図５に示す。図３は、条件２で作製した試料の室温（２９０［Ｋ］）における発光特性を示した図である。図示したように、室温において自由励起子の吸収と同じ波長３７５［ｎｍ］付近で発光が確認された。これは自由励起子が存在することを示しており、高品質な結晶が製造されたことを意味する。 Next, the measurement results of the light emission characteristics are shown in FIG. 3, FIG. 4, and FIG. FIG. 3 is a graph showing light emission characteristics of a sample manufactured under Condition 2 at room temperature (290 [K]). As shown in the figure, light emission was confirmed at around 375 [nm], which is the same as the free exciton absorption at room temperature. This indicates the presence of free excitons, which means that high quality crystals have been produced.
図４は、条件２および条件３により作製した試料の５［Ｋ］における発光特性を示した図である。条件３により作製された超微粒子は図示したレンジでは発光は確認できず、５００ｎｍ程度のブロードなレンジで発光が確認できた（５００ｎｍにおける図示は省略）。このような可視光域での発光は、酸素欠損によるものと考えられる。 FIG. 4 is a graph showing the light emission characteristics at 5 [K] of the samples manufactured under conditions 2 and 3. The ultrafine particles produced under the condition 3 could not confirm light emission in the illustrated range, but could confirm light emission in a broad range of about 500 nm (illustration at 500 nm was omitted). Such light emission in the visible light region is considered to be due to oxygen deficiency.
反対に、条件２により作製された超微粒子は３７５［ｎｍ］という短波長側で鋭い発光ピークが観測され、５００［ｎｍ］程度のレンジでは発光が確認されなかった（５００ｎｍにおける図示は省略）。このように、鋭いピークが観測されたことより、条件２の超微粒子の結晶は高品質であるといえる。 On the other hand, the ultrafine particles produced under Condition 2 showed a sharp emission peak on the short wavelength side of 375 [nm], and no emission was confirmed in the range of about 500 [nm] (illustration at 500 nm omitted). Thus, since a sharp peak was observed, it can be said that the ultrafine crystal of Condition 2 is of high quality.
図５は、ＭＢＥにより窒素をドープした酸化亜鉛単結晶薄膜の発光特性についての論文値と条件２により作製した試料の測定値とを比較した図である。この論文値は非特許文献１に掲載された、現時点で世界最高レベルの高品位のｐ型ＺｎＯ単結晶薄膜の生成の成功を紹介したものである。 FIG. 5 is a diagram comparing the paper value of the light emission characteristics of the zinc oxide single crystal thin film doped with nitrogen by MBE and the measured value of the sample manufactured under condition 2. This paper value is the introduction of the success in producing the world's highest level high-quality p-type ZnO single crystal thin film published in Non-Patent Document 1.
上記の論文によれば、図中でＡ０Ｘは窒素アクセプタによる発光ピークであり、Ｄ０Ｘはドナーによる発光ピークである。図から明らかなように、高純度（６Ｎ〜７Ｎ）原材料を用いてＭＢＥにより製造された酸化亜鉛薄膜のスペクトルと、低純度の原料で製造された酸化亜鉛超微粒子のスペクトルは、ほぼ同形であり、加えて、アクセプタとドナーとの発光ピーク比が本実施例の方が論文値に比して大きく、極めて品質の高いｐ型の超微粒子が作製されたことが伺える。 According to the above paper, in the figure, A 0 X is an emission peak due to a nitrogen acceptor, and D 0 X is an emission peak due to a donor. As is apparent from the figure, the spectrum of the zinc oxide thin film manufactured by MBE using high purity (6N-7N) raw material and the spectrum of the zinc oxide ultrafine particles manufactured from the low purity raw material are almost the same shape. In addition, the emission peak ratio between the acceptor and the donor is larger in this example than in the paper value, indicating that extremely high quality p-type ultrafine particles were produced.
また、論文値は、結晶中の窒素濃度が１０１９ｃｍ−３であるので、条件２により作成した試料は、同程度の窒素濃度であるといえる。 Moreover, since the nitrogen concentration in a crystal | crystallization is 10 < 19 > cm <-3 >, it can be said that the sample created by the conditions 2 has comparable nitrogen concentration.
以上説明したように、本実施例によれば、低純度な材料を用いて極めて高品質かつｐ型の酸化亜鉛単超微粒子を得ることができた。なお、実勢価格上、原料純度が１桁上昇すると原料価格が一桁上昇するので、本方法によれば極めて低廉に高純度な酸化亜鉛超微粒子を得ることができるといえる。 As described above, according to the present example, extremely high quality and p-type zinc oxide single ultrafine particles could be obtained using a low-purity material. In addition, since the raw material price increases by an order of magnitude when the raw material purity increases by an actual price, it can be said that according to this method, high-purity zinc oxide ultrafine particles can be obtained very inexpensively.
本発明を利用して、例えば、紫外域から緑色域で発光する酸化亜鉛系発光素子や、太陽電池などを、安価に製造することができる。 By utilizing the present invention, for example, a zinc oxide light emitting element that emits light in the ultraviolet region to the green region, a solar cell, and the like can be manufactured at low cost.
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