JP4043461B2 - フリップチップ用窒化物半導体発光素子 - Google Patents
フリップチップ用窒化物半導体発光素子 Download PDFInfo
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- JP4043461B2 JP4043461B2 JP2004251009A JP2004251009A JP4043461B2 JP 4043461 B2 JP4043461 B2 JP 4043461B2 JP 2004251009 A JP2004251009 A JP 2004251009A JP 2004251009 A JP2004251009 A JP 2004251009A JP 4043461 B2 JP4043461 B2 JP 4043461B2
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- 150000004767 nitrides Chemical class 0.000 title claims description 140
- 239000004065 semiconductor Substances 0.000 title claims description 137
- 239000000758 substrate Substances 0.000 claims description 35
- 239000003989 dielectric material Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 205
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/1401—Structure
- H01L2224/1403—Bump connectors having different sizes, e.g. different diameters, heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
11 サファイア基板
12、32、42 n型窒化物半導体層
13、33、43 活性層
14、34、44 p型窒化物半導体層
15 オーミックコンタクト層
16、47 金属バリア層
19a、19b 電極
20、50 フリップチップ発光装置
21 支持体用基板
22a、22b リードパターン
24a、24b 導電性バンプ
31、41 透光性基板
35、45 誘電体層
36、46 高反射性オーミックコンタクト層
39a、49a n側電極
39b、49b p側ボンディング電極
L1、L2 光
Claims (11)
- 窒化物単結晶成長のための透光性基板と、
前記透光性基板上に形成されたn型窒化物半導体層と、
前記n型窒化物半導体層上に形成された活性層と、
前記活性層上に形成されたp型窒化物半導体層と、
前記p型窒化物半導体層上に形成され、前記p型窒化物半導体層の露出したメッシュ構造のオープン領域を形成する複数の島状パターンからなった誘電体層と、
前記誘電体層、及び、前記p型窒化物半導体層の露出したオープン領域上に形成されたオーミックコンタクト層と、
前記オーミックコンタクト層、及び、前記n型窒化物半導体層上に夫々形成された、p側ボンディング電極、及び、n側電極とを備え、
前記誘電体層の厚さは、下記数式1のようになること、
を特徴とするフリップチップ用窒化物半導体発光素子。
- 前記メッシュ構造のオープン領域面積の和は、前記p型窒化物半導体層の上面の全面積の30%以上であること、
を特徴とする請求項1又は2に記載のフリップチップ用窒化物半導体発光素子。 - 前記誘電体層の屈折率は、前記p型窒化物半導体層の屈折率より低いこと、
を特徴とする請求項1から3のいずれか一つに記載のフリップチップ用窒化物半導体発光素子。 - 前記誘電体層は、
Si、Zr、Ta、Ti、In、Sn、Mg、及び、Alから成る群から選択された元素を有する酸化物、又は、窒化物から成ること、
を特徴とする請求項1から4のいずれか一つに記載のフリップチップ用窒化物半導体発光素子。 - 前記オーミックコンタクト層の反射率は、70%以上であること、
を特徴とする請求項1から5のいずれか一つに記載のフリップチップ用窒化物半導体発光素子。 - 前記オーミックコンタクト層は、
Ag、Ni、Al、Rh、Pd、Ir、Ru、Mg、Zn、Pt、Au、及び、その組合せから成る群から選択された物質から成る、少なくとも一つの層を備えること、
を特徴とする請求項1から6のいずれか一つに記載のフリップチップ用窒化物半導体発光素子。 - 前記オーミックコンタクト層は、
Ni、Pd、Ir、Pt、及び、Znから成る群から選択された物質から成る第1層と、
前記第1層上に形成され、Ag、及び、Alから成る群から選択された物質から成る第2層とを備えること、
を特徴とする請求項1から7のいずれか一つに記載の窒化物半導体発光素子。 - 前記オーミックコンタクト層は、
Niから成る第1層と、
前記第1層上に形成されたAgから成る第2層と、
前記第2層上に形成されたPtから成る3層とを備えること、
を特徴とする請求項1から8のいずれか一つに記載の窒化物半導体発光素子。 - 前記オーミックコンタクト層を覆う金属バリア層を、さらに備えること、
を特徴とする請求項1から8のいずれか一つに記載のフリップチップ用窒化物半導体発光素子。 - 前記金属バリア層は、
Ni、Al、Cu、Cr、Ti、及び、その組合せから成る群から選択された物質から成る、少なくとも一つの層を備えること、
を特徴とする請求項10に記載のフリップチップ用窒化物半導体発光素子。
Applications Claiming Priority (1)
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KR1020040040355A KR100631840B1 (ko) | 2004-06-03 | 2004-06-03 | 플립칩용 질화물 반도체 발광소자 |
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JP2005347728A JP2005347728A (ja) | 2005-12-15 |
JP4043461B2 true JP4043461B2 (ja) | 2008-02-06 |
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US (1) | US7294864B2 (ja) |
JP (1) | JP4043461B2 (ja) |
KR (1) | KR100631840B1 (ja) |
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2004
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- 2004-08-26 US US10/925,934 patent/US7294864B2/en active Active
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US7294864B2 (en) | 2007-11-13 |
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