JP3950889B2 - コンタクトホール充填方法 - Google Patents
コンタクトホール充填方法 Download PDFInfo
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- JP3950889B2 JP3950889B2 JP2004502346A JP2004502346A JP3950889B2 JP 3950889 B2 JP3950889 B2 JP 3950889B2 JP 2004502346 A JP2004502346 A JP 2004502346A JP 2004502346 A JP2004502346 A JP 2004502346A JP 3950889 B2 JP3950889 B2 JP 3950889B2
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- 238000000034 method Methods 0.000 title claims description 66
- 239000010410 layer Substances 0.000 claims description 157
- 238000004544 sputter deposition Methods 0.000 claims description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 14
- 239000011247 coating layer Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 238000005477 sputtering target Methods 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000945 filler Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- -1 nitride compound Chemical class 0.000 claims 1
- 230000035515 penetration Effects 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910010038 TiAl Inorganic materials 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000414 obstructive effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
さらなる形態では、コンタクトホールは、1μmより小さい直径を有する。コンタクトホールの深さは、500nmより大きい。深さは、好ましくは、1μmより大きい深さを有する。直径が500nmで深さが1μmの場合、アスペクト比は2である。しかしながら、さらに、アスペクト比がほぼ3までの場合にも、本発明による方法は、確実に実施し得る。なぜなら、特に指向性スパッタリングの場合、コンタクトホールの内外の層の厚さの相違は、許容限度内にあるからである。
−Applied Material社のIMP(Ionized Metal Plasma)法の使用、
−Applied Material社のSIP(Self Ionized Plasma)法の使用、
−Trikon社のAdvanced−High−Fill法の使用、
−Trikon社のUltra−High−Fill法の使用、あるいは、
−コリメータを用いた従来のスパッタリング法。
Claims (17)
- コンタクトホール(20)を充填する方法であって、
不活性ガスのもとで、少なくとも1つのコンタクトホール(20)内に、窒化チタンを含む基底層(50)が堆積され、
該基底層(50)の堆積の後に、ガス状の窒素のもとで、該コンタクトホール(20)内に、窒化チタンを含む被覆層(54)が堆積され、
不活性ガスのもとで、該基底層が堆積されたという事実のために、該コンタクトホールの底部の金属上には、いかなる窒化化合物も形成されず、
該被覆層(54)の堆積の後に、該コンタクトホール(20)内に、タングステンのコンタクトホール充填材が堆積され、
該コンタクトホールの底部(24)では、該被覆層(54)の厚さ(D4)が、20nmより小さいことを特徴とする、方法。 - 前記基底層(50)および/または前記被覆層(54)は、指向性スパッタリングによって堆積されることを特徴とする、請求項1に記載の方法。
- 前記基底層(50)の堆積の後であって、かつ、前記被覆層(54)の堆積の前に、前記コンタクトホール(20)内に、好ましくは指向性スパッタリングによって、中間層(B3,B4)が堆積され、該中間層の原子の少なくとも80%がチタン原子であることを特徴とする、請求項1または2に記載の方法。
- 不活性ガスのもとで前記中間層(52)の少なくとも1つの領域(B3,B4)は、スパッタリングターゲット(108)の窒化物フリーの表面から堆積されることを特徴とする、請求項3に記載の方法。
- 前記基底層(50)のスパッタリングのためのスパッタリングターゲットの表面(157)は、前記基底層(50)の堆積の前に、窒素のもとで、窒化されることを特徴とする、請求項2〜4のいずれか一項に記載の方法。
- 前記基底層(50)と前記被覆層(54)とは、同一のスパッタリングターゲット(108)を用いて生成されることを特徴とする、請求項2〜5のいずれか一項に記載の方法。
- 前記コンタクトホール(20)は、導電性接続部(14)にまで達するように誘電体層(18)に導入されることを特徴とする、請求項1〜6のいずれか一項に記載の方法。
- 複数のコンタクトホール(20)が前記誘電体層(18)に同時にエッチング形成され、
前記誘電体層(18)と前記接続部(14)との間に、好ましくは反射防止層である導電性補助層(16)が配置され、
該補助層(16)は、エッチングの際にストップ層として使用され、前記誘電体層が薄い場所では、該補助層(16)の突き抜けが生じることを特徴とする、請求項7に記載の方法。 - 前記コンタクトホールの底部(24)では、前記基底層(50)の厚さ(D3)および前記中間層(52)の厚さ(D2)の合計が、5nmより小さいことを特徴とする、請求項3に記載の方法。
- 前記コンタクトホール(20)の直径は、1μmより小さく、および/または、該コンタクトホール(20)の深さは、500nmより大きいことを特徴とする、請求項1〜9のいずれか一項に記載の方法。
- 少なくとも1つのコンタクトホール(20)を有する集積回路構造(10)であって、
該少なくとも1つのコンタクトホール(20)内に、窒化チタンの基底層(50)および被覆層(54)が配置されており、
該基底層(50)は、アルミニウムあるいはアルミニウム合金の接続部(14)に隣接し、該接続部(14)と該基底層(50)との間にはいかなる窒化アルミニウムも配置されず、
該コンタクトホール(20)は、タングステンの充填材を含み、
該コンタクトホールの底部(24)では、該被覆層(54)の厚さ(D4)が、20nmより小さいことを特徴とする、集積回路構造。 - 前記基底層(50)と前記被覆層(54)との間に配置された中間層(52)において、該中間層の原子の少なくとも80%がチタン原子であることを特徴とする、請求項11に記載の回路構造。
- 前記コンタクトホールの底部(24)では、前記基底層(50)の厚さ(D3)および前記中間層(52)の厚さ(D2)の合計が、5nmより小さいことを特徴とする、請求項12に記載の回路構造。
- 前記基底層(50)と前記被覆層(54)と前記中間層(52)とは、同一のスパッタリングターゲット(108)を用いて生成されることを特徴とする、請求項3〜5のいずれか一項に記載の方法。
- 前記接続部(14)は、アルミニウムまたはアルミニウム合金を主成分として含むことを特徴とする、請求項7に記載の方法。
- 前記コンタクトホール(20)の直径は、0.5μmであることを特徴とする、請求項10に記載の方法。
- 前記コンタクトホール(20)の深さは、1μmより大きいことを特徴とする、請求項10に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10219115A DE10219115A1 (de) | 2002-04-29 | 2002-04-29 | Verfahren zum Füllen eines Kontaktlochs und integrierte Schaltungsanordnung mit Kontaktloch |
PCT/DE2003/000861 WO2003094225A1 (de) | 2002-04-29 | 2003-03-17 | Verfahren zum füllen eines kontaktlochs |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005528785A JP2005528785A (ja) | 2005-09-22 |
JP3950889B2 true JP3950889B2 (ja) | 2007-08-01 |
Family
ID=29224876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004502346A Expired - Fee Related JP3950889B2 (ja) | 2002-04-29 | 2003-03-17 | コンタクトホール充填方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7390737B2 (ja) |
EP (1) | EP1500133A1 (ja) |
JP (1) | JP3950889B2 (ja) |
CN (1) | CN100419994C (ja) |
DE (1) | DE10219115A1 (ja) |
TW (1) | TWI322482B (ja) |
WO (1) | WO2003094225A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007004860B4 (de) * | 2007-01-31 | 2008-11-06 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung einer Kupfer-basierten Metallisierungsschicht mit einer leitenden Deckschicht durch ein verbessertes Integrationsschema |
US10975464B2 (en) * | 2018-04-09 | 2021-04-13 | International Business Machines Corporation | Hard mask films with graded vertical concentration formed using reactive sputtering in a radio frequency deposition chamber |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4121572C1 (ja) * | 1991-06-29 | 1992-12-03 | Fa. Ernst Siegling, 3000 Hannover, De | |
EP0598422B1 (en) * | 1992-10-15 | 2000-09-13 | Koninklijke Philips Electronics N.V. | Method of forming a Ti and a TiN layer on a semiconductor body by a sputtering process, comprising an additional step of cleaning the target |
US5358901A (en) * | 1993-03-01 | 1994-10-25 | Motorola, Inc. | Process for forming an intermetallic layer |
JP3216345B2 (ja) * | 1993-04-06 | 2001-10-09 | ソニー株式会社 | 半導体装置及びその作製方法 |
JP3401843B2 (ja) * | 1993-06-21 | 2003-04-28 | ソニー株式会社 | 半導体装置における多層配線の形成方法 |
KR950015602A (ko) * | 1993-11-22 | 1995-06-17 | 모리시다 요이치 | 반도체 장치의 제조방법 |
IL113882A0 (en) * | 1994-06-03 | 1995-08-31 | Varian Associates | Tin deposition method |
JPH08107087A (ja) | 1994-10-06 | 1996-04-23 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH08191104A (ja) * | 1995-01-11 | 1996-07-23 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
DE69625265T2 (de) * | 1995-03-28 | 2003-09-04 | Texas Instruments Inc., Dallas | Halbleiterstrukturen |
US5962923A (en) * | 1995-08-07 | 1999-10-05 | Applied Materials, Inc. | Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches |
DE69703851T2 (de) * | 1996-02-26 | 2001-04-26 | Applied Materials, Inc. | Barriereschichten aus Titannitrid |
JPH10125627A (ja) * | 1996-10-24 | 1998-05-15 | Fujitsu Ltd | 半導体装置の製造方法および高融点金属ナイトライド膜の形成方法 |
US6028003A (en) * | 1997-07-03 | 2000-02-22 | Motorola, Inc. | Method of forming an interconnect structure with a graded composition using a nitrided target |
US5893752A (en) * | 1997-12-22 | 1999-04-13 | Motorola, Inc. | Process for forming a semiconductor device |
US5985759A (en) * | 1998-02-24 | 1999-11-16 | Applied Materials, Inc. | Oxygen enhancement of ion metal plasma (IMP) sputter deposited barrier layers |
WO1999053114A1 (en) * | 1998-04-10 | 1999-10-21 | Applied Materials, Inc. | Continuous process for sputtering tantalum nitride films |
KR100331545B1 (ko) * | 1998-07-22 | 2002-04-06 | 윤종용 | 다단계 화학 기상 증착 방법에 의한 다층 질화티타늄막 형성방법및 이를 이용한 반도체 소자의 제조방법 |
US6410986B1 (en) * | 1998-12-22 | 2002-06-25 | Agere Systems Guardian Corp. | Multi-layered titanium nitride barrier structure |
US6316132B1 (en) * | 1999-09-02 | 2001-11-13 | Xilinx, Inc. | Structure and method for preventing barrier failure |
US6569751B1 (en) * | 2000-07-17 | 2003-05-27 | Lsi Logic Corporation | Low via resistance system |
-
2002
- 2002-04-29 DE DE10219115A patent/DE10219115A1/de not_active Withdrawn
-
2003
- 2003-03-14 TW TW092105724A patent/TWI322482B/zh not_active IP Right Cessation
- 2003-03-17 EP EP03722221A patent/EP1500133A1/de not_active Ceased
- 2003-03-17 US US10/511,851 patent/US7390737B2/en not_active Expired - Lifetime
- 2003-03-17 WO PCT/DE2003/000861 patent/WO2003094225A1/de active Application Filing
- 2003-03-17 CN CNB038096854A patent/CN100419994C/zh not_active Expired - Fee Related
- 2003-03-17 JP JP2004502346A patent/JP3950889B2/ja not_active Expired - Fee Related
-
2008
- 2008-02-15 US US12/032,267 patent/US7825510B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20080136032A1 (en) | 2008-06-12 |
WO2003094225A1 (de) | 2003-11-13 |
TW200305974A (en) | 2003-11-01 |
CN1650418A (zh) | 2005-08-03 |
EP1500133A1 (de) | 2005-01-26 |
CN100419994C (zh) | 2008-09-17 |
US7390737B2 (en) | 2008-06-24 |
US7825510B2 (en) | 2010-11-02 |
TWI322482B (en) | 2010-03-21 |
JP2005528785A (ja) | 2005-09-22 |
DE10219115A1 (de) | 2003-11-13 |
US20060024946A1 (en) | 2006-02-02 |
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