JP3950878B2 - 多波長半導体レーザ及びその製造方法 - Google Patents
多波長半導体レーザ及びその製造方法 Download PDFInfo
- Publication number
- JP3950878B2 JP3950878B2 JP2004259659A JP2004259659A JP3950878B2 JP 3950878 B2 JP3950878 B2 JP 3950878B2 JP 2004259659 A JP2004259659 A JP 2004259659A JP 2004259659 A JP2004259659 A JP 2004259659A JP 3950878 B2 JP3950878 B2 JP 3950878B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- layer
- conductivity type
- substrate
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Description
11 GaAs基板
12a n型AlGaAsクラッドクラッド層
12b n型AlGaInPクラッド層
13a AlGaAs活性層
13b GaInP/AlGaInP活性層
14a,14a’ p型AlGaAsクラッド層
14b,14b’ p型AlGaInPクラッド層
16a,16b n型GaAs電流制限層
17a,17b p型GaAsコンタクト層
18 n側電極側電極
19a,19b p側電極
20a 第1半導体レーザ構造
20b 第2半導体レーザ構造
20c 第3半導体レーザ構造
21 サファイア基板
22a 第1導電型第1クラッド層
22b 第1導電型第2クラッド層
22c 第1導電型第3クラッド層
23a 第1活性層
23b 第2活性層
23c 第3活性層
24a,24a’ 第2導電型第1クラッド層
24b,24b’ 第2導電型第2クラッド層
24c,24c’ 第2導電型第3クラッド層
25a 第1窒化物エピタキシャル層
25b 第2窒化物エピタキシャル層
25c エピタキシャル層
25 窒化物エピタキシャル層
30 3波長半導体レーザ
31 第1導電型基板
32 絶縁層
38 第1電極
39a,39b,39c 第2電極
Claims (13)
- 窒化物単結晶成長のための基板を設けるステップと、
前記窒化物単結晶成長用基板上に、第1導電型第1クラッド層、第1活性層、及び、第2導電型第1クラッド層を順次に成長させ第1窒化物エピタキシャル層を形成するステップと、
前記窒化物単結晶成長用基板の一領域が露出するよう、前記第1窒化物エピタキシャル層を選択的に除去するステップと、
前記窒化物単結晶成長用基板の露出した上面に、第1導電型第2クラッド層、第2活性層、及び、第2導電型第2クラッド層を順次に成長させ第2窒化物エピタキシャル層を形成するステップと、
前記窒化物単結晶成長用基板から、前記第1及び第2窒化物エピタキシャル層を分離するステップと、
前記第1及び第2窒化物エピタキシャル層を第1導電型基板上に接合するステップと、
前記第1及び第2窒化物エピタキシャル層を選択的にエッチングして、前記第1導電型基板の一領域を露出させ、前記第1及び第2窒化物エピタキシャル層から相互分離された第1及び第2半導体レーザ構造を形成するステップと、
前記第1導電型基板の露出した一領域に第1導電型第3クラッド層、第3活性層、及び、第2導電型第3クラッド層が順次に成長させられた第3半導体レーザ構造を形成するステップと、
前記第1導電型基板の下面と前記第1ないし第3半導体レーザ構造における夫々の第2導電型クラッド層に接続される、第1及び第2電極を形成するステップと、
を含む多波長半導体レーザの製造方法。 - 前記第3半導体レーザ構造を形成するステップ後、前記第1及び第2電極を形成するステップ前に、前記第1ないし第3半導体レーザ構造における夫々の前記第2導電型クラッド層を選択的にエッチングしてリッジ構造に形成するステップと、前記リッジ構造の上端面を除く前記第2導電型クラッド層上面に絶縁層を形成するステップとをさらに含み、
前記第2電極は前記リッジ構造の上端面を通して夫々の前記第2導電型クラッド層に接続されること、
を特徴とする請求項1に記載の多波長半導体レーザの製造方法。 - 前記絶縁層を形成するステップは、前記第1ないし第3半導体レーザ構造の側面まで延長されるよう前記絶縁層を形成するステップであること、
を特徴とする請求項2に記載の多波長半導体レーザの製造方法。 - 前記絶縁層はSiO2またはSi3N4であること、
を特徴とする請求項2又は3に記載の多波長半導体レーザの製造方法。 - 前記第1及び第2窒化物エピタキシャル層を分離するステップは、前記窒化物単結晶成長用基板の下面にレーザを照射して前記第1及び第2窒化物エピタキシャル層をリフトオフさせるステップであること、
を特徴とする請求項1から4のいずれか一項に記載の多波長半導体レーザの製造方法。 - 前記第1及び第2窒化物エピタキシャル層を分離するステップは、前記レーザを照射する前に前記窒化物単結晶成長用基板の下面に対してラッピングを施しその厚さを減少させるステップをさらに含むこと、
を特徴とする請求項5に記載の多波長半導体レーザの製造方法。 - 前記第1及び第2窒化物エピタキシャル層を前記第1導電型基板上に接合するステップは、高温において前記第1及び第2窒化物エピタキシャル層を前記第1導電型基板の上面に加圧して接合するステップであること、
を特徴とする請求項1から6のいずれか一項に記載の多波長半導体レーザの製造方法。 - 前記第1窒化物エピタキシャル層を選択的に除去するステップは、前記第1半導体レーザ構造に対応する部分の前記第1窒化物エピタキシャル層を残留させるステップであること、
を特徴とする請求項1から7のいずれか一項に記載の多波長半導体レーザ素子の製造方法。 - 前記第3半導体レーザ構造を形成するステップは、前記第1及び第2半導体レーザ構造が形成された前記第1導電型基板の上面に前記第1導電型第3クラッド層、前記第3活性層、及び、前記第2導電型第3クラッド層を順次に成長させ前記第3半導体レーザ構造のためのエピタキシャル層を形成するステップと、
前記第3半導体レーザ構造のための前記エピタキシャル層を選択的にエッチングして、前記第1導電型基板の一領域に前記第1及び第2半導体レーザ構造と分離された第3半導体レーザ構造を形成するステップと、
を含む請求項1から8のいずれか一項に記載の多波長半導体レーザの製造方法。 - 前記第1ないし第3半導体レーザ構造は、前記第1導電型基板の一側から順序どおりに形成されたこと、
を特徴とする請求項1から9のいずれか一項に記載の多波長半導体レーザの製造方法。 - 前記窒化物単結晶成長用基板は、サファイア基板、SiC基板、または、GaN基板であること、
を特徴とする請求項1から10のいずれか一項に記載の多波長半導体レーザの製造方法。 - 前記第1窒化物エピタキシャル層は青色光を発振する半導体レーザのためのGaN系半導体物質で、前記第2窒化物エピタキシャル層は緑色光を発振する半導体レーザのためのGaN系半導体物質であること、
を特徴とする請求項1から11のいずれか一項に記載の多波長半導体レーザの製造方法。 - 前記第3半導体レーザ構造のためのエピタキシャル層は、AlGaInP系半導体物質であること、
を特徴とする請求項1から12のいずれか一項に記載の多波長半導体レーザの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040048079A KR100541110B1 (ko) | 2004-06-25 | 2004-06-25 | 다파장 반도체 레이저 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006013412A JP2006013412A (ja) | 2006-01-12 |
JP3950878B2 true JP3950878B2 (ja) | 2007-08-01 |
Family
ID=35505679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004259659A Expired - Fee Related JP3950878B2 (ja) | 2004-06-25 | 2004-09-07 | 多波長半導体レーザ及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20050286591A1 (ja) |
JP (1) | JP3950878B2 (ja) |
KR (1) | KR100541110B1 (ja) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005347478A (ja) * | 2004-06-02 | 2005-12-15 | Sharp Corp | 半導体レーザ素子 |
JP2006313875A (ja) * | 2005-04-08 | 2006-11-16 | Mitsubishi Electric Corp | 半導体レーザ装置 |
US7285968B2 (en) * | 2005-04-19 | 2007-10-23 | Formfactor, Inc. | Apparatus and method for managing thermally induced motion of a probe card assembly |
US20080304531A1 (en) * | 2007-02-20 | 2008-12-11 | California Institute Of Technology | Integrated broadband quantum cascade laser |
US9407068B2 (en) | 2007-02-20 | 2016-08-02 | California Institute Of Technology | Integrated broadband quantum cascade laser |
JP2008235606A (ja) * | 2007-03-20 | 2008-10-02 | Sony Corp | 半導体発光素子、半導体発光素子の製造方法、バックライト、表示装置、電子機器および発光装置 |
KR100856230B1 (ko) * | 2007-03-21 | 2008-09-03 | 삼성전기주식회사 | 발광장치, 발광장치의 제조방법 및 모놀리식 발광다이오드어레이 |
US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
US8767787B1 (en) | 2008-07-14 | 2014-07-01 | Soraa Laser Diode, Inc. | Integrated laser diodes with quality facets on GaN substrates |
US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
JP2010166022A (ja) * | 2008-09-26 | 2010-07-29 | Sanyo Electric Co Ltd | 半導体レーザ装置および表示装置 |
JP2010109332A (ja) * | 2008-09-30 | 2010-05-13 | Sanyo Electric Co Ltd | 半導体レーザ装置および表示装置 |
JP2010166023A (ja) * | 2008-09-30 | 2010-07-29 | Sanyo Electric Co Ltd | 半導体レーザ装置および表示装置 |
US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US9531164B2 (en) | 2009-04-13 | 2016-12-27 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US8750342B1 (en) | 2011-09-09 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser diodes with scribe structures |
JP5423294B2 (ja) * | 2009-09-30 | 2014-02-19 | 住友電気工業株式会社 | 窒化物半導体発光素子 |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8451876B1 (en) | 2010-05-17 | 2013-05-28 | Soraa, Inc. | Method and system for providing bidirectional light sources with broad spectrum |
US20110286484A1 (en) * | 2010-05-24 | 2011-11-24 | Sorra, Inc. | System and Method of Multi-Wavelength Laser Apparatus |
US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
US9048170B2 (en) | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US9025635B2 (en) | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US9093820B1 (en) | 2011-01-25 | 2015-07-28 | Soraa Laser Diode, Inc. | Method and structure for laser devices using optical blocking regions |
US9287684B2 (en) * | 2011-04-04 | 2016-03-15 | Soraa Laser Diode, Inc. | Laser package having multiple emitters with color wheel |
US8971370B1 (en) | 2011-10-13 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices using a semipolar plane |
US9020003B1 (en) | 2012-03-14 | 2015-04-28 | Soraa Laser Diode, Inc. | Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates |
US9343871B1 (en) | 2012-04-05 | 2016-05-17 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9800016B1 (en) | 2012-04-05 | 2017-10-24 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US10559939B1 (en) | 2012-04-05 | 2020-02-11 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9099843B1 (en) | 2012-07-19 | 2015-08-04 | Soraa Laser Diode, Inc. | High operating temperature laser diodes |
US8971368B1 (en) | 2012-08-16 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices having a gallium and nitrogen containing semipolar surface orientation |
WO2015054662A1 (en) | 2013-10-10 | 2015-04-16 | Eastern Virginia Medical School | 4-((2-hydroxy-3-methoxybenzyl)amino) benzenesulfonamide derivatives as 12-lipoxygenase inhibitors |
US9246311B1 (en) | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
US9787963B2 (en) | 2015-10-08 | 2017-10-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
US10771155B2 (en) | 2017-09-28 | 2020-09-08 | Soraa Laser Diode, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
US10222474B1 (en) | 2017-12-13 | 2019-03-05 | Soraa Laser Diode, Inc. | Lidar systems including a gallium and nitrogen containing laser light source |
US10551728B1 (en) | 2018-04-10 | 2020-02-04 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
GB2579622B (en) | 2018-12-06 | 2021-04-28 | Exalos Ag | Superluminescent diodes and diode modules |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
US12000552B2 (en) | 2019-01-18 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2642228A1 (fr) * | 1989-01-20 | 1990-07-27 | Menigaux Louis | Procede de fabrication d'un dispositif semi-conducteur quasi plat susceptible d'effet laser multi-longueurs d'onde et dispositif correspondant |
JP2809691B2 (ja) * | 1989-04-28 | 1998-10-15 | 株式会社東芝 | 半導体レーザ |
US5386428A (en) * | 1993-11-02 | 1995-01-31 | Xerox Corporation | Stacked active region laser array for multicolor emissions |
US5436193A (en) * | 1993-11-02 | 1995-07-25 | Xerox Corporation | Method of fabricating a stacked active region laser array |
US5689123A (en) * | 1994-04-07 | 1997-11-18 | Sdl, Inc. | III-V aresenide-nitride semiconductor materials and devices |
US5804834A (en) * | 1994-10-28 | 1998-09-08 | Mitsubishi Chemical Corporation | Semiconductor device having contact resistance reducing layer |
US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
JPH08307001A (ja) * | 1995-04-28 | 1996-11-22 | Mitsubishi Electric Corp | 半導体レ−ザダイオ−ドおよびその製造方法 |
JPH09307145A (ja) | 1996-05-13 | 1997-11-28 | Nichia Chem Ind Ltd | 光半導体装置 |
TW420835B (en) * | 1997-06-16 | 2001-02-01 | Matsushita Electric Ind Co Ltd | Semiconductor manufacture method and manufacturing device therefor |
JP3456118B2 (ja) * | 1997-07-02 | 2003-10-14 | 松下電器産業株式会社 | 発光素子及びその製造方法および光ディスク装置 |
JP3893735B2 (ja) | 1998-04-24 | 2007-03-14 | 松下電器産業株式会社 | 発光装置 |
US6233265B1 (en) * | 1998-07-31 | 2001-05-15 | Xerox Corporation | AlGaInN LED and laser diode structures for pure blue or green emission |
US6285698B1 (en) * | 1998-09-25 | 2001-09-04 | Xerox Corporation | MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer |
TW498102B (en) * | 1998-12-28 | 2002-08-11 | Futaba Denshi Kogyo Kk | A process for preparing GaN fluorescent substance |
US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
JP4024463B2 (ja) * | 1999-09-27 | 2007-12-19 | シャープ株式会社 | 半導体発光素子の製造方法 |
JP2001184698A (ja) * | 1999-12-22 | 2001-07-06 | Pioneer Electronic Corp | 光ピックアップ装置 |
JP3486900B2 (ja) * | 2000-02-15 | 2004-01-13 | ソニー株式会社 | 発光装置およびそれを用いた光装置 |
EP1152293A3 (en) * | 2000-05-01 | 2002-10-02 | Fuji Photo Film Co., Ltd. | Image-recording apparatus |
US6562648B1 (en) * | 2000-08-23 | 2003-05-13 | Xerox Corporation | Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials |
JP2002118331A (ja) | 2000-10-06 | 2002-04-19 | Toshiba Corp | 集積型半導体発光装置及びその製造方法 |
JP2003015222A (ja) | 2001-06-29 | 2003-01-15 | Seiko Epson Corp | 光源装置、およびこれを用いたプロジェクタ、ならびに光源装置用リフレクタの成形型 |
JP3856750B2 (ja) * | 2001-11-13 | 2006-12-13 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US6455340B1 (en) * | 2001-12-21 | 2002-09-24 | Xerox Corporation | Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff |
US20030222263A1 (en) * | 2002-06-04 | 2003-12-04 | Kopin Corporation | High-efficiency light-emitting diodes |
JP2004014943A (ja) * | 2002-06-10 | 2004-01-15 | Sony Corp | マルチビーム型半導体レーザ、半導体発光素子および半導体装置 |
KR20040005269A (ko) | 2002-07-09 | 2004-01-16 | 엘지이노텍 주식회사 | 두 파장 레이저다이오드 및 그 제조방법 |
US6759689B2 (en) * | 2002-08-07 | 2004-07-06 | Shin-Etsu Handotai Co., Ltd. | Light emitting element and method for manufacturing the same |
JP2004304111A (ja) * | 2003-04-01 | 2004-10-28 | Sharp Corp | 多波長レーザ装置 |
KR100631832B1 (ko) * | 2003-06-24 | 2006-10-09 | 삼성전기주식회사 | 백색 발광소자 및 그 제조방법 |
-
2004
- 2004-06-25 KR KR1020040048079A patent/KR100541110B1/ko not_active IP Right Cessation
- 2004-09-03 US US10/933,532 patent/US20050286591A1/en not_active Abandoned
- 2004-09-07 JP JP2004259659A patent/JP3950878B2/ja not_active Expired - Fee Related
-
2007
- 2007-09-18 US US11/857,192 patent/US7606280B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20050123423A (ko) | 2005-12-29 |
US7606280B2 (en) | 2009-10-20 |
JP2006013412A (ja) | 2006-01-12 |
US20050286591A1 (en) | 2005-12-29 |
US20080009088A1 (en) | 2008-01-10 |
KR100541110B1 (ko) | 2006-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3950878B2 (ja) | 多波長半導体レーザ及びその製造方法 | |
US7606281B2 (en) | Method of producing multi-wavelength semiconductor laser device | |
JP4660224B2 (ja) | 半導体レーザ装置 | |
US7535945B2 (en) | Semiconductor laser apparatus and method of manufacturing the same | |
WO2004086579A1 (ja) | 窒化物半導体素子およびその製造方法 | |
JP2002118331A (ja) | 集積型半導体発光装置及びその製造方法 | |
JP3697406B2 (ja) | 半導体発光装置及びその製造方法 | |
JP3928583B2 (ja) | 発光装置の製造方法 | |
JP2001244560A (ja) | 半導体発光装置の製造方法及び半導体発光装置 | |
JP2004311964A (ja) | 窒化物半導体素子およびその製造方法 | |
JP2006128675A (ja) | 多波長半導体レーザの製造方法 | |
JPH10261816A (ja) | 半導体発光素子及びその製造方法 | |
KR100360143B1 (ko) | 반도체 레이저 소자 및 그의 제조방법 | |
JP2010153710A (ja) | 半導体レーザ装置およびその製造方法 | |
JP2001358082A (ja) | 半導体層の成長方法および半導体発光素子 | |
WO2005088790A1 (ja) | 半導体レーザ素子、およびその製造方法 | |
KR100674835B1 (ko) | 다파장 반도체 레이저 제조방법 | |
JP2007227652A (ja) | 2波長半導体発光装置及びその製造方法 | |
JP4604189B2 (ja) | 半導体基板上にモノリシック集積化された三波長半導体レーザアレイ装置 | |
JP3872627B2 (ja) | マルチビーム型半導体光デバイス装置 | |
JP4839497B2 (ja) | 半導体発光装置及び半導体発光装置の製造方法 | |
JP2006253234A (ja) | レーザダイオードチップ、レーザダイオード及びレーザダイオードチップの製造方法 | |
JP2002043697A (ja) | 半導体レーザ装置およびその製造方法 | |
JP2001217504A (ja) | 半導体レーザ素子及びその製造方法 | |
JP2011018703A (ja) | 多波長半導体レーザ及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20060714 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20060714 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20061113 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061121 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070214 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070403 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070423 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100427 Year of fee payment: 3 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100427 Year of fee payment: 3 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100427 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110427 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110427 Year of fee payment: 4 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110427 Year of fee payment: 4 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110427 Year of fee payment: 4 |
|
R370 | Written measure of declining of transfer procedure |
Free format text: JAPANESE INTERMEDIATE CODE: R370 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110427 Year of fee payment: 4 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110427 Year of fee payment: 4 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110427 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120427 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120427 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130427 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130427 Year of fee payment: 6 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313631 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313631 |
|
S633 | Written request for registration of reclamation of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313633 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130427 Year of fee payment: 6 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130427 Year of fee payment: 6 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130427 Year of fee payment: 6 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130427 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140427 Year of fee payment: 7 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |