JP3945482B2 - Semiconductor sealing resin composition and semiconductor device using the same - Google Patents
Semiconductor sealing resin composition and semiconductor device using the same Download PDFInfo
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- JP3945482B2 JP3945482B2 JP2004017628A JP2004017628A JP3945482B2 JP 3945482 B2 JP3945482 B2 JP 3945482B2 JP 2004017628 A JP2004017628 A JP 2004017628A JP 2004017628 A JP2004017628 A JP 2004017628A JP 3945482 B2 JP3945482 B2 JP 3945482B2
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- fullerene
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- 239000004065 semiconductor Substances 0.000 title claims description 58
- 239000011342 resin composition Substances 0.000 title claims description 41
- 238000007789 sealing Methods 0.000 title description 21
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 23
- 229910003472 fullerene Inorganic materials 0.000 claims description 22
- 229920000647 polyepoxide Polymers 0.000 claims description 20
- 239000003822 epoxy resin Substances 0.000 claims description 19
- 239000005011 phenolic resin Substances 0.000 claims description 10
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 8
- 239000011256 inorganic filler Substances 0.000 claims description 8
- 229920001568 phenolic resin Polymers 0.000 claims description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 description 22
- 238000011156 evaluation Methods 0.000 description 8
- 239000000049 pigment Substances 0.000 description 8
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000006229 carbon black Substances 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- -1 etc. Substances 0.000 description 3
- 239000003063 flame retardant Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 239000004203 carnauba wax Substances 0.000 description 2
- 235000013869 carnauba wax Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000010330 laser marking Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241000872198 Serjania polyphylla Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910021387 carbon allotrope Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Description
この出願の発明は、半導体素子を封止するために用いられる半導体封止用樹脂組成物と、この半導体封止用樹脂組成物を用いて封止した半導体装置に関するものである。 The invention of this application relates to a semiconductor sealing resin composition used for sealing a semiconductor element and a semiconductor device sealed using the semiconductor sealing resin composition.
近年、半導体装置の高速化・高集積化に伴い、パッケージ配線の微細化が進んでいる。 In recent years, with increasing speed and integration of semiconductor devices, package wiring has been miniaturized.
半導体装置には、通常、製造者、品名、ロット番号等がレーザーマーキングされており、半導体封止用樹脂組成物には、レーザーマーク性を高めるために、黒色顔料としてカーボンブラックが多く使用されている（例えば、特許文献１、２）。 The semiconductor device is usually laser-marked with the manufacturer, product name, lot number, etc., and the resin composition for semiconductor encapsulation often uses carbon black as a black pigment in order to improve the laser markability. (For example, Patent Documents 1 and 2).
しかし、カーボンブラックは導電性を有するため、微細な配線間に入り込むと、半導体装置が導通不良を起こすという問題があった。そのため、レーザーマーク性が高く、微細な配線の封止にも適用できる絶縁性の高い半導体封止用樹脂組成物の開発が急務となっている。
そこで、この出願の発明は、以上のとおりの事情に鑑みてなされたものであり、従来技術の問題点を解消し、少くとも従来の封止用樹脂組成物と同等のレーザーマーク性を有する、導通不良を起こす危険性のない半導体封止用樹脂組成物に係わる新しい技術手段を提供することを課題としている。 Therefore, the invention of this application has been made in view of the circumstances as described above, solves the problems of the prior art, and has at least a laser mark property equivalent to that of a conventional sealing resin composition, It is an object of the present invention to provide a new technical means related to a resin composition for encapsulating a semiconductor without the risk of causing poor conduction.
この出願の発明は、上記の課題を解決するものとして、第１には、エポキシ樹脂、フェノール樹脂、無機充填材および０．０５〜１重量％のフラーレンを必須成分として含有する半導体封止用の樹脂組成物によって封止されてなることを特徴とする半導体装置を提供する。 The invention of this application, as to solve the above problems, the first, epoxy resins, phenolic resins, for semi-conductor sealing of an inorganic filler and 0.05 to 1% by weight of the fullerene containing as essential components A semiconductor device is provided which is sealed with the resin composition.
また、この出願の発明は、第２には、フラーレンがＣ６０および／またはＣ７０である上記の半導体装置を提供する。 The invention of this application also provides the semiconductor device described above, wherein the fullerene is C60 and / or C70.
この出願の発明の半導体封止用樹脂組成物は、エポキシ樹脂、フェノール樹脂、無機充填剤および０．０５〜１重量％のフラーレンを必須成分とするものであり、従来のカーボンブラックに代わり、導電性を有さないフラーレンを顔料として用いることより、従来どおりの高いレーザーマーク性を有し、かつ導通不良を起こす恐れのない、絶縁性および成形性に優れた半導体封止用樹脂組成物を得ることができる。 The resin composition for semiconductor encapsulation of the invention of this application comprises an epoxy resin, a phenol resin, an inorganic filler, and 0.05 to 1% by weight of fullerene as essential components. By using fullerene having no properties as a pigment, a resin composition for semiconductor encapsulation having excellent laser insulating properties and excellent conductivity and moldability, which has high laser markability as usual, is obtained. be able to.
また、この出願の発明の半導体装置は、前記の半導体封止用樹脂組成物を用いて封止成形することにより製造されるものであるため、高いレーザーマーク性が維持され、かつ配線間が微細な場合でも導通不良のないものとなる。 In addition, since the semiconductor device of the invention of this application is manufactured by sealing molding using the above-described resin composition for sealing a semiconductor, a high laser mark property is maintained, and a space between wirings is fine. Even in this case, there will be no poor conduction.
この出願の発明の半導体封止用樹脂組成物は、エポキシ樹脂、フェノール樹脂、無機充填剤および顔料としてのフラーレンを必須成分とするものであり、フラーレンの含有量が０．０５〜１重量％であることを特徴とするものである。 The resin composition for encapsulating a semiconductor according to the invention of this application contains an epoxy resin, a phenol resin, an inorganic filler, and fullerene as a pigment as essential components, and the fullerene content is 0.05 to 1% by weight. It is characterized by being.
この出願の発明の半導体封止用樹脂組成物において、エポキシ樹脂は、一般的に半導体封止用として使用される各種のエポキシ樹脂であってよく、とくに限定されない。例えば、ｏ−クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、ビスフェノール型エポキシ樹脂、ブロム含有エポキシ樹脂等を挙げることができる。これらは１種に限定されず、複数を組み合わせて使用してもよい。 In the resin composition for semiconductor encapsulation of the invention of this application, the epoxy resin may be various epoxy resins generally used for semiconductor encapsulation, and is not particularly limited. For example, an o-cresol novolac type epoxy resin, a biphenyl type epoxy resin, a dicyclopentadiene type epoxy resin, a bisphenol type epoxy resin, a bromine-containing epoxy resin, and the like can be given. These are not limited to one type and may be used in combination.
この出願の発明の半導体封止用樹脂組成物において、フェノール樹脂は硬化剤として含有されるものであり、一般的に半導体封止用として使用される各種のものを適用できる。具体的には、フェノールノボラック樹脂、ジシクロペンタジエン型フェノール樹脂、フェノールアラルキル樹脂、クレゾールノボラック樹脂、ナフトールアラルキル樹脂等のナフタレン骨格含有フェノール樹脂、多価フェノール化合物が例示される。これらは１種に限定されず、複数種を組み合わせて使用してもよい。 In the resin composition for semiconductor encapsulation of the invention of this application, the phenol resin is contained as a curing agent, and various types generally used for semiconductor encapsulation can be applied. Specific examples include phenol novolac resins, dicyclopentadiene type phenol resins, phenol aralkyl resins, cresol novolac resins, naphthol aralkyl resins, and the like, naphthalene skeleton-containing phenol resins, and polyhydric phenol compounds. These are not limited to one type, and a plurality of types may be used in combination.
また、無機充填剤は、一般的に半導体封止用として使用されるものであればよく、その種類は特に限定されない。例えば、溶融シリカ、結晶シリカ、アルミナ、窒化ケイ素、窒化アルミニウム等が挙げられる。 Moreover, the inorganic filler should just be generally used for semiconductor sealing, and the kind is not specifically limited. Examples thereof include fused silica, crystalline silica, alumina, silicon nitride, and aluminum nitride.
さらに、この出願の発明の半導体封止用樹脂組成物において必須成分として含有されるフラーレンは、グラファイトやダイアモンドと同様に、炭素原子だけからなる炭素同素体であるが、グラファイトと異なり絶縁体である。したがって、これをカーボンブラックに代わる黒色顔料として、半導体封止用樹脂組成物全量に対して０．０５〜１重量％添加することにより、従来と同等のレーザーマーク性を有し、かつ高い絶縁性を有する半導体封止用樹脂組成物が得られる。フラーレンの含有量が０．０５重量％未満の場合には、顔料として十分な着色効果が得られず、レーザーマーク性が低下するため好ましくない。また、フラーレンの含有量が１重量％より多い場合には、半導体封止用樹脂組成物の粘度が増大し、流動性が低下するためにパッケージとなる成型品への充填性が悪化するため好ましくない。 Further, the fullerene contained as an essential component in the semiconductor sealing resin composition of the invention of this application is a carbon allotrope consisting of only carbon atoms, like graphite and diamond, but is an insulator unlike graphite. Therefore, by adding 0.05 to 1% by weight of this as a black pigment to replace carbon black with respect to the total amount of the resin composition for semiconductor encapsulation, it has a laser mark property equivalent to that of the prior art and high insulation properties. A resin composition for encapsulating a semiconductor is obtained. When the fullerene content is less than 0.05% by weight, a sufficient coloring effect as a pigment cannot be obtained, and the laser mark property is lowered, which is not preferable. Further, when the content of fullerene is more than 1% by weight, the viscosity of the resin composition for semiconductor encapsulation is increased, and the fluidity is lowered. Absent.
使用されるフラーレンの種類はとくに限定されず、Ｃ20以上の各種のもの、例えば、Ｃ20、Ｃ24、Ｃ50、Ｃ60、Ｃ70、Ｃ76、Ｃ84等が適用できる。中でも、Ｃ60とＣ70は球状化合物としての安定性が高いことが知られており、いずれも入手が比較的容易であることから、この出願の発明の半導体封止用樹脂組成物における顔料として好ましく使用できる。また、フラーレンは、１種類に限定されず、Ｃ60とＣ70のように複数種の混合物であってもよい。 The kind of fullerene used is not particularly limited, and various kinds of C20 or more, for example, C20, C24, C50, C60, C70, C76, C84, etc. can be applied. Among them, C60 and C70 are known to have high stability as spherical compounds, and since both are relatively easily available, they are preferably used as pigments in the resin composition for semiconductor encapsulation of the invention of this application. it can. Further, the fullerene is not limited to one kind, and may be a mixture of plural kinds such as C60 and C70.
この出願の発明の半導体封止用樹脂組成物は、以上のとおり、エポキシ樹脂、フェノール樹脂、無機充填剤、および０．０５〜１重量％のフラーレンを必須成分とするものであるが、これら以外にも、一般的に半導体封止用として使用される各種の成分を含有していてもよい。例えば、効果促進剤として、トリフェニルホスフィン（ＴＰＰ）、トリメチルホスフィン等の有機リン化合物類、２−メチルイミダゾール、２−フェニル−４−メチルイミダゾール、２−フェニルイミダゾール等のイミダゾール類、１，８−ジアザビシクロ（５，４，０）ウンデセン−７、トリエタノールアミン、ベンジルジメチルアミン等、離型剤として、カルナバワックス等、難燃剤として、リン系難燃剤、ブロム化合物、三酸化アンチモン等、シランカップリング剤として、γ−グリシドキシプロピルトリエトキシシラン等が挙げられる。 As described above, the resin composition for semiconductor encapsulation of the invention of this application contains an epoxy resin, a phenol resin, an inorganic filler, and 0.05 to 1% by weight of fullerene as essential components. In addition, various components generally used for semiconductor encapsulation may be contained. For example, as an effect accelerator, organic phosphorus compounds such as triphenylphosphine (TPP) and trimethylphosphine, imidazoles such as 2-methylimidazole, 2-phenyl-4-methylimidazole and 2-phenylimidazole, 1,8- Diazabicyclo (5,4,0) undecene-7, triethanolamine, benzyldimethylamine, etc., release agent, carnauba wax, etc., flame retardant, phosphorus flame retardant, bromine compound, antimony trioxide, etc., silane coupling Examples of the agent include γ-glycidoxypropyltriethoxysilane.
以上のとおりのこの出願の発明の半導体封止用樹脂組成物は、上記のエポキシ樹脂、フェノール樹脂、無機充填剤、フラーレン、さらに必要に応じて各種の成分を配合し、これをミキサーやブレンダーで均一に混合した後に、加熱ロールやニーダー等で混練することによって調製できるものである。ここで、上記の各成分の配合順序は特に限定されるものではなく、また混練物を必要に応じて冷却固化させ、粉砕してペレットやパウダーにしたり、あるいはタブレット化したりして使用することができる。 The resin composition for semiconductor encapsulation of the invention of this application as described above is blended with the above-mentioned epoxy resin, phenol resin, inorganic filler, fullerene, and various components as necessary, and this is mixed with a mixer or blender. After mixing uniformly, it can prepare by kneading | mixing with a heating roll, a kneader, etc. Here, the blending order of the above components is not particularly limited, and the kneaded product can be cooled and solidified as necessary, pulverized into pellets or powder, or used as a tablet. it can.
そして、このようにして調製した半導体封止用樹脂組成物を用いて封止成形することにより、半導体装置を作製することができる。具体的には、半導体素子を搭載したリードフレームをトランスファー成形金型にセットし、トランスファー成形を行うことによって、半導体素子を封止用樹脂組成物で封止した半導体装置が得られる。このようにして得られる半導体装置では、表面へのレーザーマーキングが可能であり、高集積化により配線間が微細となっている場合でも導通不良が生じることがない。 And a semiconductor device can be produced by carrying out sealing molding using the resin composition for semiconductor sealing prepared in this way. Specifically, a semiconductor device in which a semiconductor element is sealed with a sealing resin composition is obtained by setting a lead frame on which a semiconductor element is mounted in a transfer molding die and performing transfer molding. In the semiconductor device thus obtained, laser marking can be performed on the surface, and no conduction failure occurs even when the wiring is fine due to high integration.
以下、実施例を示し、この発明の実施の形態についてさらに詳しく説明する。もちろん、この発明は以下の例に限定されるものではなく、細部については様々な態様が可能であることは言うまでもない。 Hereinafter, the present invention will be described in more detail with reference to examples. Of course, the present invention is not limited to the following examples, and it goes without saying that various aspects are possible in detail.
＜実施例１〜３＞
（１）半導体封止用樹脂組成物の調製
ビフェニル型エポキシ樹脂（ジャパンエポキシレジン（株）製「ＹＸ４０００Ｈ」）、フェノールノボラック樹脂（群栄化学工業（株）製「ＰＳＭ６２００」）、溶融シリカ、フラーレンＣ60（フロンティアカーボン（株）製）、トリフェニルホスフィン（ＴＰＰ）、カルナバワックス、およびメルカプトシランカップリング剤を、表１に示した配合量で配合し、これをブレンダーで３０分間混合、均一化した後、８０℃に加熱したニーダーで混練溶融させて押し出し、冷却後、粉砕機で所定の粒度に粉砕して、半導体封止用樹脂組成物を粒状材料として調製した。
<Examples 1-3>
(1) Preparation of resin composition for semiconductor encapsulation Biphenyl type epoxy resin (“YX4000H” manufactured by Japan Epoxy Resin Co., Ltd.), phenol novolac resin (“PSM6200” manufactured by Gunei Chemical Industry Co., Ltd.), fused silica, fullerene C60 (manufactured by Frontier Carbon Co., Ltd.), triphenylphosphine (TPP), carnauba wax, and mercaptosilane coupling agent were blended in the blending amounts shown in Table 1, and this was mixed and homogenized for 30 minutes with a blender. Thereafter, the mixture was kneaded and melted with a kneader heated to 80 ° C., extruded, cooled, and then pulverized to a predetermined particle size by a pulverizer to prepare a semiconductor sealing resin composition as a granular material.
（２）レーザーマーク性の評価
上記（１）で得られた半導体封止用樹脂組成物を用いて５０ｍｍφの成型品をトランスファー成形し、これにＹＡＧレーザーを用いてレーザーマーキングを行った。印字性が特によいものを◎、印字性が良好なものを○、印字性が悪いものを×と目視で評価した。
(2) Evaluation of laser mark property Transfer molding of a 50 mmφ molded product was performed using the resin composition for semiconductor encapsulation obtained in the above (1), and laser marking was performed using a YAG laser. Visually evaluated as ◎ for those with particularly good printability, ○ for those with good printability, and × for those with poor printability.
（３）導通不良の評価
１６ＤＩＰのＴＥＧにより半導体封止用樹脂組成物の絶縁性を評価した。
(3) Evaluation of conduction failure The insulation property of the resin composition for semiconductor encapsulation was evaluated by 16DIP TEG.
導通不良が見られず絶縁性が高いものを◎、導通不良が見られたものを×と評価した。 The case where no poor conduction was observed and the insulation property was high was evaluated as “、”, and the case where poor conduction was observed was evaluated as “x”.
（４）流動性の評価
得られた半導体封止用樹脂組成物の流動性を２８ｍｍ角ＬＱＦＰの１個取り金型を用いた実成形により測定した。
(4) Evaluation of fluidity The fluidity of the obtained resin composition for encapsulating a semiconductor was measured by actual molding using a 28 mm square LQFP single die.
流動性の高いものを◎、流動性が良好なものを○、流動性が悪いものを×と評価した。 Those having high fluidity were evaluated as ◎, those having good fluidity as ○, and those having poor fluidity as ×.
以上の評価結果を表１に示した。 The above evaluation results are shown in Table 1.
＜実施例４＞
ビフェニル型エポキシ樹脂に代わり、エポキシ樹脂としてｏ−クレゾールノボラック型エポキシ樹脂（住友化学工業（株）製「ＥＳＣＬ１９５ＸＬ」）を使用し、難燃剤としてブロム化エポキシ樹脂（住友化学工業（株）製「ＥＳＢ４００」）と三酸化アンチモンを添加して、表１に示した配合量で、実施例１と同様の方法により半導体封止用樹脂組成物を調製した。
<Example 4>
Instead of biphenyl type epoxy resin, o-cresol novolac type epoxy resin (“ESCL195XL” manufactured by Sumitomo Chemical Co., Ltd.) is used as an epoxy resin, and brominated epoxy resin (“ESB400” manufactured by Sumitomo Chemical Co., Ltd.) is used as a flame retardant. )) And antimony trioxide were added, and a resin composition for semiconductor encapsulation was prepared in the same manner as in Example 1 with the blending amounts shown in Table 1.
得られた半導体封止用樹脂組成物を実施例１と同様の方法により評価し、結果を表１に示した。 The obtained resin composition for semiconductor encapsulation was evaluated in the same manner as in Example 1, and the results are shown in Table 1.
＜比較例１＞
フラーレンの代わりにカーボンブラックを使用した以外は、実施例１と同様の方法により半導体封止用樹脂組成物を調製し、レーザーマーク性、導通不良、および流動体を評価した。評価結果を表１に示した。
<Comparative Example 1>
A semiconductor sealing resin composition was prepared in the same manner as in Example 1 except that carbon black was used instead of fullerene, and the laser mark property, poor conduction, and fluid were evaluated. The evaluation results are shown in Table 1.
＜比較例２＞
フラーレンの代わりにカーボンブラックを使用した以外は、実施例４と同様の方法により半導体封止用樹脂組成物を調製し、レーザーマーク性、導通不良、および流動体を評価した。評価結果を表１に示した。
<Comparative example 2>
A semiconductor sealing resin composition was prepared in the same manner as in Example 4 except that carbon black was used instead of fullerene, and the laser mark property, poor conduction, and fluid were evaluated. The evaluation results are shown in Table 1.
＜比較例３＞
フラーレンの含有量を０．０２重量％とした以外は、実施例１と同様の方法により半導体封止用樹脂組成物を調製し、レーザーマーク性、導通不良、および流動体を評価した。
<Comparative Example 3>
A semiconductor sealing resin composition was prepared in the same manner as in Example 1 except that the fullerene content was 0.02 wt%, and the laser mark property, poor conduction, and fluid were evaluated.
評価結果を表１に示した。 The evaluation results are shown in Table 1.
＜比較例４＞
フラーレンの含有量を１．３重量％とした以外は、実施例１と同様の方法により半導体封止用樹脂組成物を調製し、レーザーマーク性、導通不良、および流動体を評価した。
<Comparative example 4>
A semiconductor sealing resin composition was prepared in the same manner as in Example 1 except that the fullerene content was 1.3% by weight, and the laser mark property, poor conduction, and fluid were evaluated.
評価結果を表１に示した。 The evaluation results are shown in Table 1.
表１にみられるように、エポキシ樹脂、フェノール樹脂、無機充填剤、および０．０５〜１重量％のフラーレンを含有する半導体封止用樹脂組成物（実施例１〜４）では、高いレーザーマーク性が保持され、かつ、導通不良のない高い絶縁性が発揮されることが確認された。また、半導体封止用樹脂組成物の流動性も良好であった。 As seen in Table 1, a high laser mark is obtained in the resin composition for semiconductor encapsulation (Examples 1 to 4) containing an epoxy resin, a phenol resin, an inorganic filler, and 0.05 to 1% by weight of fullerene. It was confirmed that the high insulation property without any poor conduction was exhibited. Moreover, the fluidity | liquidity of the resin composition for semiconductor sealing was also favorable.
一方、黒色顔料としてカーボンブラックを使用した半導体封止用樹脂組成物（比較例１および２）では、導通不良が起こった。 On the other hand, in the semiconductor sealing resin composition using carbon black as the black pigment (Comparative Examples 1 and 2), poor conduction occurred.
また、フラーレンを黒色顔料として用いた場合でも、半導体封止用樹脂組成物における含有量が０．０５重量％未満の場合（比較例３）には、導通不良は見られず、高い流動性が維持されたものの、レーザーマーク性が低下してしまうことが明らかになった。 Further, even when fullerene is used as a black pigment, when the content in the resin composition for semiconductor encapsulation is less than 0.05% by weight (Comparative Example 3), there is no poor conduction and high fluidity is obtained. Although it was maintained, it became clear that the laser mark property deteriorated.
さらに、フラーレンの含有量が１重量％よりも多い半導体封止用樹脂組成物（比較例４）では、高いレーザーマーク性と絶縁性が得られたが、流動性が著しく低下し、成形性が悪化することが示された。 Further, in the resin composition for semiconductor encapsulation having a fullerene content of more than 1% by weight (Comparative Example 4), high laser mark property and insulating property were obtained, but fluidity was remarkably lowered and moldability was improved. It was shown to get worse.
以上詳しく説明したとおり、この発明によって、高いレーザーマーク性を有し、かつ導通不良のない半導体封止用樹脂組成物が提供される。 As described above in detail, the present invention provides a resin composition for encapsulating a semiconductor having high laser mark properties and no poor conduction.
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| JP5005272B2 (en) * | 2006-06-23 | 2012-08-22 | 京セラケミカル株式会社 | Semiconductor sealing resin composition and semiconductor device |
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| KR101914967B1 (en) | 2014-11-26 | 2018-11-05 | 쿄세라 코포레이션 | Resin composition for semiconductor encapsulation and semiconductor device |
| CN105255112B (en) * | 2015-10-29 | 2017-11-21 | 国家纳米科学中心 | A kind of epoxy resin fulvene compounding material and preparation method thereof |
| CN112646316A (en) * | 2020-12-03 | 2021-04-13 | 全球能源互联网研究院有限公司 | Low-conductivity temperature coefficient epoxy resin/fullerene composite material and preparation method thereof |
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