JP3844608B2 - Vacuum deposition system - Google Patents

Vacuum deposition system Download PDF

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Publication number
JP3844608B2
JP3844608B2 JP28962498A JP28962498A JP3844608B2 JP 3844608 B2 JP3844608 B2 JP 3844608B2 JP 28962498 A JP28962498 A JP 28962498A JP 28962498 A JP28962498 A JP 28962498A JP 3844608 B2 JP3844608 B2 JP 3844608B2
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Prior art keywords
substrate
chamber
vacuum
plate
film forming
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JP28962498A
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JP2000119848A (en
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政輔 末代
重光 佐藤
弘樹 大空
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Ulvac Inc
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Ulvac Inc
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Priority to JP28962498A priority Critical patent/JP3844608B2/en
Priority to KR10-1999-0043798A priority patent/KR100508744B1/en
Priority to TW088117608A priority patent/TW439100B/en
Publication of JP2000119848A publication Critical patent/JP2000119848A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、真空中で液晶用薄膜等の各種の薄膜をスパッタリング、ＣＶＤなどの成膜方法により基板に成膜する真空成膜装置に関する。
【０００２】
【従来の技術】
従来、この種の真空成膜装置の代表的なものとして、例えば図１に示したような枚葉式のスパッタリング装置が知られている。この装置は、略六角形の真空の搬送室ａの周囲に、ガラス基板などの基板ｂを出し入れする２室の仕込み取出し室ｃ、ｄと、基板ｂを加熱する加熱手段を備えた加熱室ｅと、基板ｂにエッチングやスパッタリングなどの成膜処理を施す真空処理室ｆ、ｇ、ｈを設けたもので、該搬送室ａの内部に設けた搬送腕ｉにより仕込み取出し室ｃ又はｄからそこに用意された基板ｂを取出し、加熱室ｅへ搬入する。該加熱室ｅに於いて目的の温度にまで加熱されたのち、該搬送腕ｉで真空処理室ｆ、ｇ、ｈへ送られ、これらの室内で該基板ｂに成膜を施し、該搬送腕ｉで仕込み取出し室ｃ又はｄへ戻され、所定温度まで冷却されて大気中へ取り出される。
【０００３】
【発明が解決しようとする課題】
従来の真空成膜装置は、独立した加熱室が設備されているので、成膜装置全体が大きくなり、装置価格が高価になる不都合があった。また、基板を該加熱室に搬出入する時間と加熱するための時間が必要であるためタクトが遅くなり、生産性が悪い欠点があった。
【０００４】
本発明は、小型で安価に製作でき、生産性の良い真空成膜装置を提供することを目的とするものである。
【０００５】
【課題を解決するための手段】
本発明では、基板に成膜処理を施す真空処理室と、該基板を大気圧の外部と該真空処理室との間で搬出入するための、基板冷却手段及び基板加熱手段を備え排気手段を備えた仕込み取出し室とを具備する真空成膜装置に於いて、前記基板冷却手段を前記仕込み取出し室の内部の下方に設けた低温に制御された冷却プレートで形成し、前記仕込み取出し室の内部の上方に該冷却プレートと間隔を存して平行に対向配置したヒータープレートを備えた前記基板加熱手段を設けると共に、該仕込み取出し室に、該冷却プレートと該ヒータープレートとの間に搬入された基板を該冷却プレートに接近又は接触した位置と該ヒータープレートに接近した浮上位置とに移動させる昇降装置を設けることにより、或いは、前記仕込み取出し室の内部を２室に区画し、その一方の区画内に低温に制御されたプレートからなる前記基板冷却手段を設け、もう一方の区画内に前記基板加熱手段を設けることにより、上記目的を達成するようにした。
【０００６】
【発明の実施の形態】
本発明の実施の形態を別紙図面に基づき説明すると、図２に於いて符号１は六角形の平面形状を持つ真空成膜装置の搬送室、符号２及び３は該搬送室１の側面にドアバルブ４を介して連設した仕込み取出し室、符号５乃至８は該搬送室１の他の側面にドアバルブ４を介して連設した成膜用のエッチング装置やスパッタリング装置などの公知の成膜装置を収容した真空処理室を示す。これらの室は真空ポンプにより適当な圧力に真空排気され、該搬送室１内には関節を持った昇降伸縮旋回自在の搬送腕９が設けられる。
【０００７】
各仕込み取出し室２、３は、成膜処理を施す基板１０を室内から大気中へ出し入れするための開口１１と、室内から搬送室１へ出し入れするための開口１２が設けられ、図３に示したように、各室の下方の底面には冷却プレート１３ａからなる接近又は接触式の冷却手段１３をそのプレート面を上方に向けて固定し、その室内の上方にはハロゲンランプ１４とリフレクター１５及びヒータープレート１６で構成された基板加熱手段１７を支柱１８で固定した。各開口１１、１２は夫々ドアバルブ４を閉じることにより密閉され、その内部は真空排気口３１から真空ポンプに連なる真空排気手段と、リークバルブによる大気の導入とにより、真空圧と大気圧とに制御される。
【０００８】
該冷却プレート１３ａのプレート面と該ヒータープレート１６のプレート面は、間隔１９を存して互いに対向し、該基板１０が該間隔１９へ開口１１又は１２を介して搬送腕９により或いは公知のローディング装置（図示してない）により搬出入される。該冷却プレート１３ａのプレート面には、基板１０の搬送のための受け渡しと基板１０の温度調整のために出没自在のピンからなる昇降装置２１を設け、該間隔１９へ搬送腕９或いはローディング装置に乗せられて基板１０が搬入されたとき、該昇降装置２１が上昇して基板１０を搬送腕９等から持ち上げて浮上位置で受け取り、該搬送腕９等が退去後に該昇降装置２１が昇降して冷却プレート１３ａ上に接触した位置或いはヒータープレート１６に例えば数ｍｍに接近した位置に基板１０を位置させ、基板温度を調節する。この温度調節が終わると、該昇降装置２１が昇降して該基板１０を搬送腕９又はローディング装置へ渡し、該搬送腕９等により搬送室１又は外部の大気中へ基板１０が取り出される。該基板１０やこれに形成された膜が急冷などでダメージを受けることが予想される場合は、基板１０を冷却プレート１３ａに接近させ、そうでない場合は接触させて冷却する。
【０００９】
該基板１０は、これへの真空成膜に先立ち例えば２５０℃程度の所定の温度に加熱され、その成膜後には例えば５０℃程度に冷却して大気中に取り出される。また、該基板１０が大気圧の外部から該仕込み取出し室２、３へ搬入されたとき、該仕込み取出し室２、３は大気圧から真空圧にまで排気される。本発明に於いては、この基板１０の加熱を該仕込み取出し室２、３に設けた基板加熱手段１７により大気圧から真空圧にまで排気する時間を利用して行うもので、該仕込み取出し室２、３内で所定温度に加熱された基板１０を搬送腕９により直接に真空処理室５等へ搬入して成膜処理を施すことができ、基板１０の加熱のための独立した室が不要になるため真空成膜装置を小型に構成でき、必要な場合には図示のように真空処理室を増設できる。
【００１０】
図３の構成の仕込み取出し室２、３では、大気圧の外部から基板１０が搬入されたときに昇降装置２１により浮上位置３０にまで基板１０を上昇させ、加熱手段１７を作動させながら該仕込み取出し室２、３内を密閉して大気圧から真空圧にまで排気し、該基板１０が所定温度になったところで該昇降装置２１が下降して開口１２を介して室内へ進入した搬送腕９上に基板１０を載せ、該搬送腕９が最初の成膜工程を行う処理室５へ基板１０を運ぶ。このあと、成膜工程に従い搬送腕９が該処理室５から他の処理室へ搬送し、成膜が完了したところで該仕込み取出し室２、３へ基板１０を戻す。成膜を終えた基板１０は高温であるため冷却して大気中へ取り出されるが、その冷却のため該昇降装置２１が搬送腕９から基板１０を受領したのち下降して冷却手段１３に基板１０を接触させ、所定の低温になったところで該昇降装置２１が基板１０をローディング装置に受け渡すために上昇し、該仕込み取出し室２、３内を大気圧にしたのち該ローディング装置が室内へ進入して成膜を終えた基板１０を大気中に搬出する。
【００１１】
図４及び図５に示した例は、１室の真空処理室２２のみを備えた真空成膜装置の例であり、この場合は１室の仕込み取出し室２３に搬送室１を介して該処理室２２を連設し、該仕込み取出し室２３の内部を図６に示すように仕込み室区画２３ａと取出し区画２３ｂとに区画し、仕込み区画２３ａに加熱手段１７を設けるとともに取出し区画２３ｂに基板１０を受け止めるための支柱２４を設けるようにした。該仕込み取出し室２３には昇降旋回自在のベルトコンベアを備えた公知のローディング装置２５を接続し、基板１０を該ローディング装置２５の側方に設けたストックテーブル２６から処理室２２へ搬送腕９で送り込み、成膜された基板１０をもう一方のストックテーブル２７上に送り出すようにした。
【００１２】
図７に示した仕込み取出し室３２は、流体通路２８を設けたプレート２９を備えたもので、該流体通路２８に流れる流体を加熱流体又は低温流体として温度を制御し、該プレート２９に接触又は接近する基板１０に加熱と冷却のいずれかが与えられるようにした。
【００１３】
【発明の効果】
以上のように本発明によるときは、成膜処理を施す基板を冷却する冷却手段及び排気手段を備えた真空成膜装置の仕込み取出し室に、基板加熱手段を設けるようにしたので、成膜を施す際の基板の加熱を仕込み取出し室内を真空に排気する時間を利用して行うことができ、タクト時間を短縮できて生産性が向上し、その加熱のための独立した室が不要になるので成膜装置を小型で安価に製作することが可能になり、必要な場合は成膜の処理室を増設できる等の効果がある。
【図面の簡単な説明】
【図１】従来の真空成膜装置の全体平面図
【図２】本発明の実施の形態を示す要部の平面図
【図３】図２の３−３線部分の拡大断面図
【図４】本発明の他の実施の形態を示す斜視図
【図５】図４の平面図
【図６】図４の６−６線部分の拡大断面図
【図７】本発明の更に他の実施の形態を示す断面図
【符号の説明】
１ 搬送室、２・３ 仕込み取出し室、５・６・７・８ 真空処理室、１０ 基板、１３ 冷却手段、１３ａ 冷却プレート、１６ ヒータープレート、１７ 基板加熱手段、１９ 間隔、２１ 昇降装置、２３ａ・２３ｂ 区画、２８ 流体通路、２９ プレート、３０ 浮上位置、[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vacuum film forming apparatus for forming various thin films such as liquid crystal thin films on a substrate in a vacuum by a film forming method such as sputtering or CVD.
[0002]
[Prior art]
Conventionally, for example, a single-wafer type sputtering apparatus as shown in FIG. 1 is known as a typical example of this type of vacuum film forming apparatus. In this apparatus, around a substantially hexagonal vacuum transfer chamber a, a heating chamber e provided with two charging and unloading chambers c and d for loading and unloading a substrate b such as a glass substrate, and a heating means for heating the substrate b. And vacuum processing chambers f, g, and h for performing film formation processing such as etching and sputtering on the substrate b, and the transfer arm i provided in the transfer chamber a is used to remove it from the take-out chamber c or d. The substrate b prepared in step 1 is taken out and carried into the heating chamber e. After being heated to a target temperature in the heating chamber e, it is sent to the vacuum processing chambers f, g, h by the transfer arm i, and a film is formed on the substrate b in these chambers. The product is returned to the charge take-out chamber c or d by i, cooled to a predetermined temperature, and taken out to the atmosphere.
[0003]
[Problems to be solved by the invention]
Since the conventional vacuum film forming apparatus is provided with an independent heating chamber, there is a disadvantage that the entire film forming apparatus becomes large and the cost of the apparatus becomes expensive. In addition, since the time for carrying the substrate in and out of the heating chamber and the time for heating are required, the tact time is slow and the productivity is poor.
[0004]
An object of the present invention is to provide a vacuum film-forming apparatus that is small and can be manufactured at low cost and has high productivity.
[0005]
[Means for Solving the Problems]
In the present invention, a vacuum processing chamber for forming a film on the substrate, and a substrate cooling means and a substrate heating means for carrying the substrate between the outside of the atmospheric pressure and the vacuum processing chamber are provided. In the vacuum film-forming apparatus provided with the charging / unloading chamber provided , the substrate cooling means is formed by a cooling plate controlled at a low temperature provided below the charging / unloading chamber, and the inside of the charging / unloading chamber The substrate heating means provided with a heater plate arranged in parallel with the cooling plate at an interval above the cooling plate is provided, and is loaded into the charging / unloading chamber between the cooling plate and the heater plate. by kicking setting an elevating device for moving the substrate in a floating position close to approach or contact position and the heater plate to the cooling plate, or the inside of the charged extraction chamber into two chambers Fractionated, the substrate cooling means comprising a controlled plates to low temperatures on the one compartment is provided, by providing the substrate heating means in the other compartment, and to achieve the above object.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
The embodiment of the present invention will be described with reference to the accompanying drawings. In FIG. 2, reference numeral 1 is a transfer chamber of a vacuum film forming apparatus having a hexagonal plane shape, and reference numerals 2 and 3 are door valves on the side of the transfer chamber 1. 4 is a charging / unloading chamber provided continuously through 4, and reference numerals 5 to 8 denote known film forming apparatuses such as a film forming etching apparatus and a sputtering apparatus connected to the other side surface of the transfer chamber 1 through a door valve 4. The accommodated vacuum processing chamber is shown. These chambers are evacuated to an appropriate pressure by a vacuum pump, and a transfer arm 9 having a joint that can be moved up and down and retractable is provided in the transfer chamber 1.
[0007]
Each of the loading / unloading chambers 2 and 3 is provided with an opening 11 for taking in and out the substrate 10 to be subjected to film formation from the room to the atmosphere and an opening 12 for taking in and out the room from the room to the transfer chamber 1 as shown in FIG. As described above, an approaching or contact type cooling means 13 comprising a cooling plate 13a is fixed to the bottom surface of each chamber with its plate surface facing upward, and a halogen lamp 14 and a reflector 15 and A substrate heating means 17 constituted by a heater plate 16 was fixed by a column 18. Each of the openings 11 and 12 is sealed by closing the door valve 4, and the inside is controlled to a vacuum pressure and an atmospheric pressure by a vacuum exhaust means connected to the vacuum pump from the vacuum exhaust port 31 and introduction of the atmosphere by a leak valve. Is done.
[0008]
The plate surface of the cooling plate 13a and the plate surface of the heater plate 16 are opposed to each other with a gap 19 therebetween, and the substrate 10 is moved to the gap 19 via the opening 11 or 12 by the transfer arm 9 or a known loading. It is carried in and out by a device (not shown). The plate surface of the cooling plate 13a is provided with an elevating device 21 composed of pins that can be moved in and out for transferring the substrate 10 and adjusting the temperature of the substrate 10. When the substrate 10 is loaded and the substrate 10 is carried in, the elevating device 21 rises and lifts the substrate 10 from the transfer arm 9 etc. and receives it in the floating position. The substrate 10 is positioned at a position in contact with the cooling plate 13a or a position close to, for example, several millimeters on the heater plate 16, and the substrate temperature is adjusted. When this temperature adjustment is finished, the lifting device 21 moves up and down to transfer the substrate 10 to the transport arm 9 or the loading device, and the substrate 10 is taken out into the transport chamber 1 or the outside atmosphere by the transport arm 9 or the like. When the substrate 10 or a film formed thereon is expected to be damaged by rapid cooling or the like, the substrate 10 is brought close to the cooling plate 13a, and if not, the substrate 10 is contacted and cooled.
[0009]
The substrate 10 is heated to a predetermined temperature of, for example, about 250 ° C. prior to vacuum film formation thereon, and is cooled to, for example, about 50 ° C. and taken out into the atmosphere after the film formation. Further, when the substrate 10 is carried into the preparation / removal chambers 2 and 3 from outside the atmospheric pressure, the preparation / removal chambers 2 and 3 are evacuated from atmospheric pressure to vacuum pressure. In the present invention, the heating of the substrate 10 is performed using the time for exhausting from the atmospheric pressure to the vacuum pressure by the substrate heating means 17 provided in the charging and unloading chambers 2 and 3. The substrate 10 heated to a predetermined temperature in 2 and 3 can be directly carried into the vacuum processing chamber 5 or the like by the transfer arm 9 to perform the film forming process, and an independent chamber for heating the substrate 10 is unnecessary. Therefore, the vacuum film forming apparatus can be made compact, and if necessary, a vacuum processing chamber can be added as shown in the figure.
[0010]
In the preparation take-out chambers 2 and 3 having the configuration shown in FIG. 3, when the substrate 10 is carried in from the outside of the atmospheric pressure, the raising and lowering device 21 raises the substrate 10 to the floating position 30 and operates the heating means 17 while operating the heating means 17. The inside of the take-out chambers 2 and 3 is sealed and evacuated from atmospheric pressure to vacuum pressure. When the substrate 10 reaches a predetermined temperature, the lifting device 21 descends and enters the chamber through the opening 12. The substrate 10 is placed thereon, and the transfer arm 9 carries the substrate 10 to the processing chamber 5 where the first film formation process is performed. Thereafter, the transfer arm 9 is transferred from the processing chamber 5 to another processing chamber in accordance with the film forming process, and when the film formation is completed, the substrate 10 is returned to the preparation take-out chambers 2 and 3. Since the substrate 10 after film formation is high in temperature, it is cooled and taken out into the atmosphere. For this cooling, the elevating device 21 descends after receiving the substrate 10 from the transfer arm 9 and moves to the cooling means 13. When the temperature reaches a predetermined low temperature, the lifting / lowering device 21 moves up to deliver the substrate 10 to the loading device, and after the inside of the loading / unloading chambers 2 and 3 is brought to atmospheric pressure, the loading device enters the room. Then, the substrate 10 on which film formation has been completed is carried out into the atmosphere.
[0011]
The example shown in FIGS. 4 and 5 is an example of a vacuum film forming apparatus having only one vacuum processing chamber 22, and in this case, the processing is performed via the transfer chamber 1 in one charging / unloading chamber 23. As shown in FIG. 6, the inside of the charging / unloading chamber 23 is divided into a charging chamber compartment 23a and an extraction compartment 23b, the heating means 17 is provided in the charging compartment 23a, and the substrate 10 is provided in the extraction compartment 23b. A support post 24 is provided for catching. A known loading device 25 equipped with a belt conveyor that can be swung up and down is connected to the preparation take-out chamber 23, and the substrate 10 is transferred from the stock table 26 provided on the side of the loading device 25 to the processing chamber 22 by the transfer arm 9. Then, the substrate 10 formed into a film was sent out onto the other stock table 27.
[0012]
7 is provided with a plate 29 provided with a fluid passage 28, the temperature of the fluid flowing in the fluid passage 28 is controlled as a heating fluid or a low-temperature fluid, and the plate 29 is contacted or Either heating or cooling was applied to the approaching substrate 10.
[0013]
【The invention's effect】
As described above, according to the present invention, since the substrate heating means is provided in the charging / unloading chamber of the vacuum film forming apparatus provided with the cooling means and the exhaust means for cooling the substrate to be subjected to the film forming process, the film forming is performed. The substrate can be heated at the time of application by using the time required to evacuate the inside of the take-out chamber, the tact time can be shortened, the productivity is improved, and an independent chamber for the heating becomes unnecessary. It is possible to manufacture the film forming apparatus in a small size and at a low cost, and there is an effect that a film forming processing chamber can be added if necessary.
[Brief description of the drawings]
FIG. 1 is an overall plan view of a conventional vacuum film forming apparatus. FIG. 2 is a plan view of a main part showing an embodiment of the present invention. FIG. 3 is an enlarged cross-sectional view taken along line 3-3 in FIG. FIG. 5 is a perspective view showing another embodiment of the present invention. FIG. 5 is a plan view of FIG. 4. FIG. 6 is an enlarged sectional view taken along line 6-6 of FIG. Sectional view showing form 【Explanation of symbols】
DESCRIPTION OF SYMBOLS 1 Transfer chamber, 2.3 Charge preparation chamber, 5, 6, 7, 8 Vacuum processing chamber, 10 Substrate, 13 Cooling means, 13a Cooling plate, 16 Heater plate, 17 Substrate heating means, 19 Interval, 21 Lifting device, 23a 23b compartment, 28 fluid passages, 29 plates, 30 levitation position,

Claims (2)

基板に成膜処理を施す真空処理室と、該基板を大気圧の外部と該真空処理室との間で搬出入するための、基板冷却手段及び基板加熱手段を備え排気手段を備えた仕込み取出し室とを具備する真空成膜装置に於いて、前記基板冷却手段を前記仕込み取出し室の内部の下方に設けた低温に制御された冷却プレートで形成し、前記仕込み取出し室の内部の上方に該冷却プレートと間隔を存して平行に対向配置したヒータープレートを備えた前記基板加熱手段を設けると共に、該仕込み取出し室に、該冷却プレートと該ヒータープレートとの間に搬入された基板を該冷却プレートに接近又は接触した位置と該ヒータープレートに接近した浮上位置とに移動させる昇降装置を設けたことを特徴とする真空成膜装置。A vacuum processing chamber for performing a film forming process on the substrate, and a loading / unloading unit having a substrate cooling means and a substrate heating means for carrying in and out the substrate between the outside of the atmospheric pressure and the vacuum processing chamber, and an exhaust means. in vacuum deposition apparatus comprising a chamber, the substrate cooling means is formed by the charged extraction chamber inside the low temperature controlled cooling plate provided below the, the above inside the charged extraction chamber The substrate heating means having a heater plate arranged in parallel and opposite to the cooling plate is provided, and the substrate carried between the cooling plate and the heater plate is cooled in the charging / unloading chamber. A vacuum film forming apparatus comprising a lifting device that moves between a position approaching or contacting the plate and a floating position approaching the heater plate . 基板に成膜処理を施す真空処理室と、該基板を大気圧の外部と該真空処理室との間で搬出入するための、基板冷却手段及び基板加熱手段を備え排気手段を備えた仕込み取出し室とを具備する真空成膜装置に於いて、前記仕込み取出し室の内部を２室に区画し、その一方の区画内に低温に制御されたプレートからなる前記基板冷却手段を設け、もう一方の区画内に前記基板加熱手段を設けたことを特徴とする真空処理室。 A vacuum processing chamber for performing a film forming process on the substrate, and a loading / unloading unit having a substrate cooling means and a substrate heating means for carrying in and out the substrate between the outside of the atmospheric pressure and the vacuum processing chamber, and an exhaust means. A vacuum film forming apparatus comprising a chamber, wherein the inside of the take-out chamber is divided into two chambers, and the substrate cooling means comprising a plate controlled at a low temperature is provided in one of the chambers, A vacuum processing chamber characterized in that the substrate heating means is provided in the compartment.
JP28962498A 1998-10-12 1998-10-12 Vacuum deposition system Expired - Fee Related JP3844608B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP28962498A JP3844608B2 (en) 1998-10-12 1998-10-12 Vacuum deposition system
KR10-1999-0043798A KR100508744B1 (en) 1998-10-12 1999-10-11 Vacuum film deposition apparatus
TW088117608A TW439100B (en) 1998-10-12 1999-10-12 Vacuum film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28962498A JP3844608B2 (en) 1998-10-12 1998-10-12 Vacuum deposition system

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JP3844608B2 true JP3844608B2 (en) 2006-11-15

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JP5021112B2 (en) * 2000-08-11 2012-09-05 キヤノンアネルバ株式会社 Vacuum processing equipment
JP6024372B2 (en) 2012-10-12 2016-11-16 Tdk株式会社 Substrate processing apparatus and substrate processing chamber module
KR102226624B1 (en) * 2018-03-30 2021-03-12 시바우라 메카트로닉스 가부시끼가이샤 Apparatus for forming organic film and method for producing organic film
CN110616406A (en) * 2018-11-29 2019-12-27 爱发科豪威光电薄膜科技(深圳)有限公司 Magnetron sputtering coating machine

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