JP3818311B1 - 結晶育成用坩堝 - Google Patents
結晶育成用坩堝 Download PDFInfo
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- JP3818311B1 JP3818311B1 JP2005084402A JP2005084402A JP3818311B1 JP 3818311 B1 JP3818311 B1 JP 3818311B1 JP 2005084402 A JP2005084402 A JP 2005084402A JP 2005084402 A JP2005084402 A JP 2005084402A JP 3818311 B1 JP3818311 B1 JP 3818311B1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】結晶育成用坩堝1は、種結晶を設置するための円筒状の先端部3と、結晶を育成するために先端部の上方に形成されていて先端部の径より大きい径を有する円筒状の直胴部5とを含む窒化ほう素製坩堝であって、先端部の厚みT1と直胴部の厚みT2とは0.1mm≦T2<T1≦5mmの条件を満たし、直胴部の内径D2と直胴部の長さL2とは100mm<D2および2<L2/D2<5の条件を満たすことを特徴としている。
【選択図】図1
Description
Claims (4)
- 種結晶を設置するための円筒状の先端部と、結晶を育成するために前記先端部の上方に形成されていて前記先端部の径より大きい径を有する円筒状の直胴部とを含む窒化ほう素製坩堝であって、
前記先端部の厚みT1と前記直胴部の厚みT2とは、0.1mm≦T2<T1≦5mmの条件を満たし、
前記直胴部の内径D2と前記直胴部の長さL2とは、100mm<D2および2<L2/D2<5の条件を満たすことを特徴とする結晶育成用坩堝。 - 前記先端部の厚みT1と前記直胴部の厚みT2とは、T1≦0.9mmおよびT2≦0.6mmの条件を満たすことを特徴とする請求項1に記載の結晶育成用坩堝。
- 前記先端部の内径D1と前記直胴部の内径D2とは、1/20≦D1/D2≦1/5の条件を満たすことを特徴とする請求項1または2に記載の結晶育成用坩堝。
- 前記先端部の内径D1と前記種結晶の外径S1とが、室温において0.01mm≦D1−S1≦1mmの条件を満たすことを特徴とする請求項1から3のいずれかに記載の結晶育成用坩堝。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005084402A JP3818311B1 (ja) | 2005-03-23 | 2005-03-23 | 結晶育成用坩堝 |
EP20060715433 EP1862570B1 (en) | 2005-03-23 | 2006-03-09 | Crystal growing crucible |
PCT/JP2006/304562 WO2006100927A1 (ja) | 2005-03-23 | 2006-03-09 | 結晶育成用坩堝 |
CNB2006800008276A CN100526520C (zh) | 2005-03-23 | 2006-03-09 | 晶体生长坩埚 |
KR1020077002447A KR100783463B1 (ko) | 2005-03-23 | 2006-03-09 | 결정 성장용 도가니 |
US11/884,836 US7473317B2 (en) | 2005-03-23 | 2006-03-09 | Crystal growth crucible |
TW095108816A TW200643237A (en) | 2005-03-23 | 2006-03-15 | Crystal growing crucible |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005084402A JP3818311B1 (ja) | 2005-03-23 | 2005-03-23 | 結晶育成用坩堝 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP3818311B1 true JP3818311B1 (ja) | 2006-09-06 |
JP2006265025A JP2006265025A (ja) | 2006-10-05 |
Family
ID=37023598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005084402A Active JP3818311B1 (ja) | 2005-03-23 | 2005-03-23 | 結晶育成用坩堝 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7473317B2 (ja) |
EP (1) | EP1862570B1 (ja) |
JP (1) | JP3818311B1 (ja) |
KR (1) | KR100783463B1 (ja) |
CN (1) | CN100526520C (ja) |
TW (1) | TW200643237A (ja) |
WO (1) | WO2006100927A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7497907B2 (en) * | 2004-07-23 | 2009-03-03 | Memc Electronic Materials, Inc. | Partially devitrified crucible |
US8747554B2 (en) * | 2006-06-20 | 2014-06-10 | Momentive Performance Materials Inc. | Multi-piece ceramic crucible and method for making thereof |
WO2009082816A1 (en) * | 2007-12-31 | 2009-07-09 | Rafael Nathan Kleiman | High efficiency silicon-based solar cells |
US20090169781A1 (en) * | 2007-12-31 | 2009-07-02 | Marc Schaepkens | Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom |
US20110129784A1 (en) * | 2009-11-30 | 2011-06-02 | James Crawford Bange | Low thermal expansion doped fused silica crucibles |
WO2011096597A1 (ja) * | 2010-05-21 | 2011-08-11 | 住友電気工業株式会社 | 結晶成長用熱分解窒化ホウ素製容器、およびそれを用いた半導体結晶の成長方法 |
CN103374746A (zh) * | 2012-04-27 | 2013-10-30 | 比亚迪股份有限公司 | 一种用于制作准单晶硅的装置及一种准单晶硅的制作方法 |
US10435814B2 (en) * | 2015-10-30 | 2019-10-08 | The Board Of Trustees Of The Leland Stanford Junior University | Single metal crystals |
JP2019172525A (ja) * | 2018-03-29 | 2019-10-10 | 住友金属鉱山株式会社 | 単結晶育成用種結晶 |
US20210079556A1 (en) * | 2018-08-07 | 2021-03-18 | Sumitomo Electric Industries, Ltd. | Gallium arsenide single crystal and gallium arsenide single crystal substrate |
JP7155968B2 (ja) * | 2018-12-04 | 2022-10-19 | Tdk株式会社 | 単結晶育成用ルツボ及び単結晶製造方法 |
JP7403098B2 (ja) * | 2020-02-27 | 2023-12-22 | 不二越機械工業株式会社 | 酸化ガリウム単結晶育成用るつぼ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04367583A (ja) | 1991-06-11 | 1992-12-18 | Kobe Steel Ltd | 化合物半導体単結晶の製造方法 |
JP3120662B2 (ja) * | 1994-08-08 | 2000-12-25 | 住友電気工業株式会社 | 結晶育成用るつぼ |
DE69609568T2 (de) * | 1995-05-26 | 2001-02-01 | Sumitomo Electric Industries, Ltd. | Verfahren zur Herstellung von einem II-VI oder III-V Halbleitereinkristall |
JP3201305B2 (ja) * | 1996-04-26 | 2001-08-20 | 住友電気工業株式会社 | Iii−v族化合物半導体結晶の製造方法 |
US6670025B2 (en) * | 2001-05-24 | 2003-12-30 | General Electric Company | Pyrolytic boron nitride crucible and method |
JP2004026577A (ja) * | 2002-06-26 | 2004-01-29 | Hitachi Cable Ltd | 化合物半導体単結晶成長装置及び化合物半導体単結晶成長方法 |
JP2004277266A (ja) * | 2003-03-19 | 2004-10-07 | Hitachi Cable Ltd | 化合物半導体単結晶の製造方法 |
-
2005
- 2005-03-23 JP JP2005084402A patent/JP3818311B1/ja active Active
-
2006
- 2006-03-09 WO PCT/JP2006/304562 patent/WO2006100927A1/ja active Application Filing
- 2006-03-09 US US11/884,836 patent/US7473317B2/en active Active
- 2006-03-09 CN CNB2006800008276A patent/CN100526520C/zh active Active
- 2006-03-09 KR KR1020077002447A patent/KR100783463B1/ko not_active IP Right Cessation
- 2006-03-09 EP EP20060715433 patent/EP1862570B1/en active Active
- 2006-03-15 TW TW095108816A patent/TW200643237A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN101018895A (zh) | 2007-08-15 |
KR20070069130A (ko) | 2007-07-02 |
TW200643237A (en) | 2006-12-16 |
US7473317B2 (en) | 2009-01-06 |
CN100526520C (zh) | 2009-08-12 |
JP2006265025A (ja) | 2006-10-05 |
WO2006100927A1 (ja) | 2006-09-28 |
EP1862570A4 (en) | 2008-04-09 |
EP1862570B1 (en) | 2015-04-22 |
TWI359217B (ja) | 2012-03-01 |
EP1862570A1 (en) | 2007-12-05 |
US20080127885A1 (en) | 2008-06-05 |
KR100783463B1 (ko) | 2007-12-07 |
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