JP3754436B2 - Polishing pad and semiconductor device manufacturing method using the same - Google Patents
Polishing pad and semiconductor device manufacturing method using the same Download PDFInfo
- Publication number
- JP3754436B2 JP3754436B2 JP2004046411A JP2004046411A JP3754436B2 JP 3754436 B2 JP3754436 B2 JP 3754436B2 JP 2004046411 A JP2004046411 A JP 2004046411A JP 2004046411 A JP2004046411 A JP 2004046411A JP 3754436 B2 JP3754436 B2 JP 3754436B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- layer
- polishing pad
- cushion layer
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/22—Rubbers synthetic or natural
- B24D3/24—Rubbers synthetic or natural for close-grained structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
Description
本発明は、シリコンウエハや光学材料、ハードディスク用のガラス基板、情報記録用樹脂板やセラミック板等の高度の表面平坦性を要求される材料の平坦化加工処理を安定、かつ高い均一性で行うための研磨パッドに関するものである。本発明の研磨パッドは、特にシリコンウエハ並びにその上に酸化物層、金属層等が形成された半導体ウエハを、平坦化する工程に使用する研磨パッドで、被研磨体であるシリコンウエハなどのＣＭＰ（ケミカルメカニカルポリッシング）による優れた平坦化特性とその均一性を提供し得る研磨パッドおよびこの研磨パッドを使用しての半導体デバイスの製造方法に関する。 The present invention performs stable and highly uniform flattening processing of materials requiring high surface flatness such as silicon wafers, optical materials, glass substrates for hard disks, resin plates for information recording, and ceramic plates. The present invention relates to a polishing pad. The polishing pad of the present invention is a polishing pad used in a process of planarizing a silicon wafer and a semiconductor wafer on which an oxide layer, a metal layer, etc. are formed, and is a CMP of a silicon wafer or the like to be polished. The present invention relates to a polishing pad capable of providing excellent planarization characteristics and uniformity by (chemical mechanical polishing), and a method of manufacturing a semiconductor device using the polishing pad.
高度の表面平坦性を要求される材料の代表的なものとしては、半導体集積回路（ＩＣ，ＬＳＩ）を製造するシリコンウエハと呼ばれる単結晶シリコンの円板が挙げられる。シリコンウエハは、ＩＣ、ＬＳＩ等の製造工程において、回路作成に使用する各種薄膜の信頼できる半導体接合を形成するために、各薄膜作成工程において表面を高精度に平坦に仕上げることが要求される。 As a typical material that requires a high degree of surface flatness, there is a single crystal silicon disk called a silicon wafer for manufacturing a semiconductor integrated circuit (IC, LSI). Silicon wafers are required to have a highly accurate flat surface in each thin film production process in order to form reliable semiconductor junctions of various thin films used for circuit production in the manufacturing process of IC, LSI, and the like.
一般的には、研磨パッドはプラテンと呼ばれる回転可能な支持円盤に固着され、半導体ウエハは自公転運動可能な研磨ヘッドと呼ばれる円盤に固着される。双方の回転運動により、研磨パッドとウエハとの間隙に微細な粒子（砥粒）を懸濁させた研磨スラリーを付加することで、研磨 、平坦化加工が実施される。この際、研磨パッドがウエハ表面上を移動する時、接触点で砥粒がウエハ表面上に押し付けられる。従って、ウエハ表面と砥粒との間の滑り動摩擦的な作用により加工面の研磨が実行される。このような研磨加工は、通常ＣＭＰ研磨加工と称されている。 In general, the polishing pad is fixed to a rotatable support disk called a platen, and the semiconductor wafer is fixed to a disk called a polishing head capable of rotating and revolving. Polishing and planarization are performed by adding a polishing slurry in which fine particles (abrasive grains) are suspended in the gap between the polishing pad and the wafer by both rotational movements. At this time, when the polishing pad moves on the wafer surface, the abrasive grains are pressed onto the wafer surface at the contact point. Therefore, polishing of the work surface is performed by the sliding frictional action between the wafer surface and the abrasive grains. Such a polishing process is usually referred to as a CMP polishing process.
従来、上記の高精度の研磨に使用される研磨パッドの研磨層としては、一般的に空洞率が３０〜３５％程度のポリウレタン発泡体シートが使用されているが、ポリウレタン発泡体シートは、局部的な平坦化能力は優れているものの、圧縮率が０．５〜１．０％程度と小さく、従ってクッション性が不足しているためにウエハ全面に均一な圧力を与えることが難しい。このため、通常、ポリウレタン発泡体シートの背面に柔らかいクッション層が別途設けられた研磨パッドを使用して、研磨加工が行われる。 Conventionally, as a polishing layer of a polishing pad used for the above-described high-precision polishing, a polyurethane foam sheet having a porosity of about 30 to 35% is generally used. Although the flattening ability is excellent, the compression ratio is as small as about 0.5 to 1.0%, and therefore the cushioning property is insufficient, so that it is difficult to apply a uniform pressure to the entire surface of the wafer. For this reason, polishing is usually performed using a polishing pad in which a soft cushion layer is separately provided on the back surface of the polyurethane foam sheet.
しかし、従来のポリウレタンシートを使用した研磨パッドのクッション層としては、以下の問題を有する。
（１）クッション層としては、連続空洞を持った樹脂含浸不織布が広く使用されているが、不織布に含浸される樹脂の含浸量のバラツキ、不織布の厚さのバラツキ、スラリー液の浸水による圧縮特性の変化等の問題がある。
（２）独立空洞を持った発泡ウレタンフォームが使用され始めているが、製造における発泡状態の安定化が困難である事、また空洞を持たせることにより、荷重をかけることにより、空洞の変形が起こり、回復するまでに時間を有する。すなわち、繰り返し荷重に対する残留歪みが大きい等の問題が残り、研磨時のウエハからの繰り返し荷重に対し、クッション層が変形し研磨特性に問題を生じる。
However, the cushioning layer of a polishing pad using a conventional polyurethane sheet has the following problems.
(1) As the cushion layer, a resin-impregnated nonwoven fabric having continuous cavities is widely used. However, the resin impregnation amount impregnated in the nonwoven fabric varies, the nonwoven fabric thickness varies, and the compression characteristics due to water immersion of the slurry liquid. There are problems such as changes.
(2) Foamed urethane foam with independent cavities has begun to be used, but it is difficult to stabilize the foamed state in manufacturing, and the cavity is deformed by applying a load by having the cavities. Have time to recover. That is, problems such as a large residual strain with respect to the repeated load remain, and the cushion layer is deformed with respect to the repeated load from the wafer at the time of polishing, causing a problem in polishing characteristics.
そのため、最近ではこれら問題点を解消するために、ＣＭＰプロセス時に使用される研磨パッドにおいて、種々の積層研磨パッド、例えば
（１）圧縮回復率が９０％以上である（ゴム弾性保有材質の）クッション層に研磨層を積層した研磨パッド（特許文献１）、
（２）体積弾性率が６０ＭＰａ以上で引っ張り弾性率が０．１から２０ＭＰａであるクッション層に水との接触角が７５度以下で曲げ弾性率が２ＧＰａ以上およびまたは表面硬度がデュロメーター硬度で８０以上の研磨層を積層した研磨パッド（特許文献２）、
（３）軟質ゴム状弾性体によるシート状発泡体と研磨布とを接着積層した研磨部材（特許文献３）等
が提案されている。
Therefore, recently, in order to solve these problems, various laminated polishing pads such as (1) a cushion (made of a rubber-elastic material) having a compression recovery rate of 90% or more are used in the polishing pad used in the CMP process. A polishing pad in which a polishing layer is laminated on a layer (Patent Document 1),
(2) A cushion layer having a bulk modulus of 60 MPa or more and a tensile modulus of 0.1 to 20 MPa has a contact angle with water of 75 degrees or less, a flexural modulus of 2 GPa or more, and / or a surface hardness of 80 or more in durometer hardness. A polishing pad (Patent Document 2) in which a plurality of polishing layers are laminated,
(3) A polishing member (Patent Document 3) in which a sheet-like foam made of a soft rubber-like elastic body and an abrasive cloth are bonded and laminated has been proposed.
特許文献１は、圧縮回復率が９０％以上である（ゴム弾性保有材質の）クッション層を使用することで研磨時の圧縮荷重に対して残留歪の少ない圧縮特性の変化を低減さす研磨パッドとなすことを目的としたものであり、研磨層にポリウレタン樹脂（いかなるポリウレタン樹脂を選定したかの開示はなされておらない）材質を使用した積層研磨パッドの例示がなされ、面内均一性と平坦化特性共に優れた研磨パッドとして示されているが研磨レートが極めて低いものである。 Patent Document 1 discloses a polishing pad that reduces a change in compression characteristics with little residual strain with respect to a compression load at the time of polishing by using a cushion layer (made of a rubber-elastic material) having a compression recovery rate of 90% or more. The purpose of this is to exemplify a laminated polishing pad that uses a polyurethane resin (no disclosure of which polyurethane resin was selected) for the polishing layer. In-plane uniformity and flattening Although it is shown as a polishing pad having excellent characteristics, the polishing rate is extremely low.
特許文献２は、体積弾性率が６０ＭＰａ以上で引っ張り弾性率が０．１から２０ＭＰａであるクッション層に水との接触角が７５度以下で曲げ弾性率が２ＧＰａ以上および／または表面硬度がデュロメータ硬度で８０以上の研磨層を積層した研磨パッドであり、研磨層として硬質の樹脂（例として、紙およびまたは布基材積層板、または硬質マトリックス樹脂に親水性成分を分散した組成物）を用いて平坦化特性を得てかつ水濡れ性をもってスクラッチ抑制を目論む研磨パッドであるが、その研磨層の硬さや曲げ弾性率が本発明のそれとは異なるオーダーのものであり、クッション層の例示においても一般的クッション層に使用されるものを示し、その例として無発泡のエラストマーが開示されている。また面内均一性と平坦化特性共に優れた研磨パッドとして示されているが研磨レートが極めて低いものである。 Patent Document 2 discloses that a cushion layer having a bulk modulus of 60 MPa or more and a tensile modulus of 0.1 to 20 MPa has a contact angle with water of 75 degrees or less, a flexural modulus of 2 GPa or more, and / or a surface hardness of durometer hardness. A polishing pad in which 80 or more polishing layers are laminated using a hard resin (for example, a paper and / or cloth base laminate or a composition in which a hydrophilic component is dispersed in a hard matrix resin) as the polishing layer. Although it is a polishing pad that obtains flattening characteristics and has water wettability with the aim of suppressing scratches, the hardness and bending elastic modulus of the polishing layer are different from those of the present invention, and it is also common in the illustration of cushion layers Examples of non-foamed elastomers are disclosed as examples for use in a typical cushion layer. Moreover, although it is shown as a polishing pad excellent in both in-plane uniformity and planarization characteristics, the polishing rate is extremely low.
特許文献３は、軟質ゴム状弾性体のシート状発泡体に研磨布を接着積層した研磨部材が開示されており、上記シート状発泡体として天然ゴム、合成ゴムまたは熱可塑性エラストマーからなる独立気泡の発泡体が記載されているが、研磨布としてベロアタイプの不織布などの布帛が記載されており、本発明の研磨層材質とは全く異なるものである。
本発明は、上記のような従来の研磨パッドやそれを用いた研磨方法では解決し得ない問題点を解決し、スクラッチを発生させることなく、研磨速度を向上させ、かつ半導体ウエハなどの被研磨体のより高い平坦化特性と均一性が同時に得られる研磨パッドおよび該研磨パッドを用いた半導体デバイスの製造方法を提供することを目的とするものである。 The present invention solves the problems that cannot be solved by the conventional polishing pad and the polishing method using the same as described above, improves the polishing rate without generating scratches, and polishes a semiconductor wafer or the like. An object of the present invention is to provide a polishing pad capable of simultaneously obtaining higher planarization characteristics and uniformity of a body, and a method of manufacturing a semiconductor device using the polishing pad.
本発明者等は、上述のような現状に鑑み鋭意研究を重ねた結果、研磨層とクッション層とから成る研磨パッドにおいて、研磨層に発泡ポリウレタンを使用し、クッション層に独立気泡発泡体を使用して積層し、研磨層の曲げ弾性率、クッション層の厚さおよび歪定数を特定範囲内に規定することによって上記課題を解決し得ることを見出し、本発明を完成した。 As a result of intensive research in view of the above situation, the present inventors have used a polyurethane foam for the polishing layer and a closed cell foam for the cushion layer in the polishing pad comprising the polishing layer and the cushion layer. The present invention was completed by finding that the above-mentioned problems can be solved by laminating and regulating the bending elastic modulus of the polishing layer, the thickness of the cushion layer, and the strain constant within a specific range.
すなわち本発明は、研磨層とクッション層とを含む、半導体ウエハを研磨する研磨パッドであって、該研磨層が発泡ポリウレタンから形成され、かつ曲げ弾性率２５０〜３５０ＭＰａを有し、該発泡ポリウレタンが圧縮率０．５〜５．０％を有し、該クッション層が独立気泡発泡体から形成され、かつ厚さ０．５〜１．０ｍｍおよび歪定数０．０１〜０．０８μｍ／（ｇｆ／ｃｍ２）を有することを特徴とする研磨パッドに関する。
That is, the present invention includes a polishing layer and a cushion layer, a polishing pad for polishing a semiconductor wafer, the polishing layer is formed of foamed polyurethane, and bending have a modulus 250～350MPa, foamed polyurethane Having a compression ratio of 0.5 to 5.0%, the cushion layer being formed from a closed cell foam, and having a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 μm / (gf / cm 2 ).
クッション層に関しては、従来、厚さ１〜２ｍｍ程度および歪定数０．１μｍ／（ｇｆ／ｃｍ２）以上を有するものが用いられていた。このようなクッション層を用いて、平坦化特性と均一性を確保していたが、近年、より高い平坦化特性が求められており、このようなクッション層を用いた研磨パッドでは対応できなくなってきた。均一性を確保しながら高い平坦化特性を得るためには、研磨層として高い硬度を有してウエハ全面のうねりに追従するのに、研磨層のマクロな意味での曲げ特性が必要である。本発明者等は、鋭意検討の結果、そのような曲げ特性の最適範囲は曲げ弾性率で２５０〜３５０ＭＰａであることを見出したものである。 As for the cushion layer, those having a thickness of about 1 to 2 mm and a strain constant of 0.1 μm / (gf / cm 2 ) or more have been conventionally used. Although such a cushion layer has been used to ensure flattening characteristics and uniformity, in recent years, higher flattening characteristics have been demanded, and polishing pads using such cushion layers cannot be used. It was. In order to obtain high planarization characteristics while ensuring uniformity, the polishing layer needs to have bending characteristics in a macro sense in order to follow the waviness of the entire wafer surface with high hardness as the polishing layer. As a result of intensive studies, the present inventors have found that the optimum range of such bending characteristics is a flexural modulus of 250 to 350 MPa.
更に、上記曲げ特性の範囲で高い平坦化特性と均一性とを得るために、クッション層の歪定数および厚さにも最適範囲があり、本発明においては、従来用いられた範囲とは異なり、厚さ０．５〜１．０ｍｍおよび歪定数０．０１〜０．０８μｍ／（ｇｆ／ｃｍ２）であることを見出したものである。 Furthermore, in order to obtain high flattening characteristics and uniformity in the above bending characteristic range, there is an optimum range for the strain constant and thickness of the cushion layer, and in the present invention, unlike the range used conventionally, It has been found that the thickness is 0.5 to 1.0 mm and the strain constant is 0.01 to 0.08 μm / (gf / cm 2 ).
更に、本発明を好適に実施するためには、
上記発泡ポリウレタンが平均気泡径１〜７０μｍ以下を有し、
上記発泡ポリウレタンが比重０．５〜１．０ｇ／ｃｍ３を有し、
上記発泡ポリウレタンが硬度４５〜６５度を有し、
上記発泡ポリウレタンが圧縮率０．５〜５．０％を有し、および
上記クッション層が、ポリウレタン樹脂およびポリエチレン樹脂から成る群から選択される１種以上から形成される
ことが好ましい。
Furthermore, in order to implement this invention suitably,
The foamed polyurethane has an average cell diameter of 1 to 70 μm or less,
The foamed polyurethane has a specific gravity of 0.5 to 1.0 g / cm 3 ;
The foamed polyurethane has a hardness of 45 to 65 degrees,
It is preferable that the foamed polyurethane has a compression ratio of 0.5 to 5.0%, and the cushion layer is formed of one or more selected from the group consisting of a polyurethane resin and a polyethylene resin.
本発明の別の態様には、本発明の研磨パッドを用いて少なくとも半導体ウエハの表面を研磨する工程を含む半導体デバイスの製造方法がある。 In another aspect of the present invention, there is a method for manufacturing a semiconductor device including a step of polishing at least the surface of a semiconductor wafer using the polishing pad of the present invention.
本発明により、研磨層とクッション層とから成る研磨パッドにおいて、研磨層に発泡ポリウレタンを使用し、クッション層に独立気泡発泡体を使用して積層し、研磨層の曲げ弾性率、クッション層の厚さおよび歪定数を特定範囲内に規定することによって、従来品と比べて極めて高い平坦化特性を持ちながら、スクラッチを発生させることなく、研磨速度を向上させ、かつ半導体ウエハなどの被研磨体のより高い平坦化特性と均一性が同時に得られる研磨パッドを提供することが可能となり、またそのような研磨パッドは半導体デバイスの製造などに極めて有用である。 According to the present invention, in a polishing pad comprising a polishing layer and a cushion layer, a polyurethane foam is used for the polishing layer and a closed cell foam is used for the cushion layer, and the bending elastic modulus of the polishing layer and the thickness of the cushion layer are laminated. By defining the thickness and strain constant within a specific range, the polishing rate is improved without generating scratches while having extremely high flattening characteristics as compared with conventional products, and the polishing object such as a semiconductor wafer is improved. It is possible to provide a polishing pad that can obtain higher planarization characteristics and uniformity at the same time, and such a polishing pad is extremely useful for manufacturing semiconductor devices.
以下、本発明の研磨パッドについて更に詳しく説明する。前述のように、本発明の研磨パッドは研磨層と研磨層より柔らかいクッション層とから成る。本発明の研磨パッドにおいて、研磨層は発泡ポリウレタンから形成され、かつ曲げ弾性率２５０〜３５０ＭＰａを有することを要件とするが、好ましくは２６０〜３４０ＭＰａ、より好ましくは２７０〜３３０ＭＰａである。上記研磨層の曲げ弾性率が２５０ＭＰａに満たない場合は面内均一性は良好であるものの、十分な平坦化特性を得ることが出来ない。上記研磨層の曲げ弾性率が３５０ＭＰａを超える場合は平坦化特性は優れているものの、均一性を満足できないものとなる。 Hereinafter, the polishing pad of the present invention will be described in more detail. As described above, the polishing pad of the present invention comprises a polishing layer and a cushion layer softer than the polishing layer. In the polishing pad of the present invention, the polishing layer is made of foamed polyurethane and has a flexural modulus of 250 to 350 MPa, preferably 260 to 340 MPa, more preferably 270 to 330 MPa. When the bending elastic modulus of the polishing layer is less than 250 MPa, in-plane uniformity is good, but sufficient planarization characteristics cannot be obtained. When the flexural modulus of the polishing layer exceeds 350 MPa, the planarization characteristics are excellent, but the uniformity cannot be satisfied.
本発明の研磨パッドにおいて、クッション層は独立気泡発泡体から形成され、かつ厚さ０．５〜１．０ｍｍおよび歪定数０．０１〜０．０８μｍ／（ｇｆ／ｃｍ２）を有することを要件とする。上記クッション層の厚さは、好ましくは０．６〜０．９ｍｍ、より好ましくは０．７〜０．８５ｍｍである。上記クッション層の厚さが、０．５ｍｍより小さいと高い平坦化特性が得られるが、均一性が著しく悪化し、１．０ｍｍより大きいと均一性は良く、一般的な（従来品並みの）平坦化特性は得られるが、本発明の目指す高い平坦化特性を得ることができない。 In the polishing pad of the present invention, the cushion layer is formed from a closed cell foam and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 μm / (gf / cm 2 ). And The thickness of the cushion layer is preferably 0.6 to 0.9 mm, more preferably 0.7 to 0.85 mm. When the thickness of the cushion layer is smaller than 0.5 mm, high flattening characteristics can be obtained, but the uniformity is remarkably deteriorated. Although the flattening characteristic can be obtained, the high flattening characteristic aimed by the present invention cannot be obtained.
上記クッション層の歪定数は、好ましくは０．０２〜０．０７μｍ／（ｇｆ／ｃｍ２）、より好ましくは０．０３〜０．０６μｍ／（ｇｆ／ｃｍ２）である。上記クッション層の歪定数が、０．０１μｍ／（ｇｆ／ｃｍ２）より小さいとクッション層の厚さが上記範囲内にあっても十分な均一性が得られず、０．０８μｍ／（ｇｆ／ｃｍ２）より大きいとクッション層の厚さが上記範囲内にあっても高い平坦化特性を得ることができない。 Strain constant of the cushion layer is preferably 0.02~0.07μm / (gf / cm 2) , more preferably 0.03~0.06μm / (gf / cm 2) . When the strain constant of the cushion layer is smaller than 0.01 μm / (gf / cm 2 ), sufficient uniformity cannot be obtained even if the thickness of the cushion layer is within the above range, and 0.08 μm / (gf / If it is larger than cm 2 ), even if the thickness of the cushion layer is within the above range, high planarization characteristics cannot be obtained.
本発明の研磨パッドにおいては、上記のような要件をすべて満足することによって、即ち、上記研磨層の特性と上記クッション層の特性が相まってはじめて研磨速度（研磨レート）が向上しかつ平坦化特性と面内均一性とが共に優れた研磨が可能となる本発明の効果が得られるものであり、これらの一方の層が上記のような特性を保有したものであっても、他の一方の層の特性がそのような範囲から逸脱すれば本発明の効果は得られない。 In the polishing pad of the present invention, the polishing rate (polishing rate) is improved and the flattening characteristic is satisfied only when all the above requirements are satisfied, that is, the characteristics of the polishing layer and the characteristics of the cushion layer are combined. The effect of the present invention that enables polishing with excellent in-plane uniformity is obtained, and even if one of these layers possesses the above characteristics, the other layer If the characteristic deviates from such a range, the effect of the present invention cannot be obtained.
本発明の研磨パッドでは、上記研磨層用の発泡ポリウレタンが平均気泡径１〜７０μｍ、好ましくは５〜５０μｍを有することが望ましい。上記平均気泡径が、１μｍより小さいとスラリー保持効果が小さくなって研磨レートが低下し、７０μｍより大きいとスラリー保持効果が高くなって研磨レートが大きくなるが、平坦化特性が十分に得られなくなる。 In the polishing pad of the present invention, it is desirable that the polyurethane foam for the polishing layer has an average cell diameter of 1 to 70 μm, preferably 5 to 50 μm. When the average bubble diameter is smaller than 1 μm, the slurry holding effect is reduced and the polishing rate is lowered. When the average bubble diameter is larger than 70 μm, the slurry holding effect is increased and the polishing rate is increased, but flattening characteristics cannot be sufficiently obtained. .
本発明の研磨パッドでは、上記研磨層用の発泡ポリウレタンが比重０．５〜１．０ｇ／ｃｍ３、好ましくは０．７〜０．９ｇ／ｃｍ３を有することが望ましい。上記比重が０．５ｇ／ｃｍ３未満の場合、研磨層の表面（研磨面）の強度が低下し、半導体ウエハなどの被研磨対象物の平坦化特性（プラナリティ）が低下し、また、１．０ｇ／ｃｍ３より大きい場合は、研磨層表面の微細気泡の数が少なくなり、平坦化特性は良好であるが、研磨速度が小さくなる傾向にある。 In the polishing pad of the present invention, it is desirable that the polyurethane foam for the polishing layer has a specific gravity of 0.5 to 1.0 g / cm 3 , preferably 0.7 to 0.9 g / cm 3 . When the specific gravity is less than 0.5 g / cm 3, the strength of the surface (polishing surface) of the polishing layer decreases, the planarization characteristic (planarity) of the object to be polished such as a semiconductor wafer decreases, and When it is larger than 0 g / cm 3, the number of fine bubbles on the surface of the polishing layer is reduced and the planarization characteristics are good, but the polishing rate tends to be low.
本発明の研磨パッドでは、上記研磨層用の発泡ポリウレタンが硬度４５〜６５度、好ましくは４５〜６０度を有することが望ましい。上記硬度が４５度未満の場合には、被研磨対象物の平坦化特性が低下し、６５度より大きい場合には、平坦化特性は良好であるが、被研磨対象物の面内均一性が低下する傾向にある。 In the polishing pad of the present invention, it is desirable that the polyurethane foam for the polishing layer has a hardness of 45 to 65 degrees, preferably 45 to 60 degrees. When the hardness is less than 45 degrees, the planarization characteristic of the object to be polished is lowered. When the hardness is greater than 65 degrees, the planarization characteristic is good, but the in-plane uniformity of the object to be polished is good. It tends to decrease.
本発明の研磨パッドでは、上記研磨層用の発泡ポリウレタンが圧縮率０．５〜５．０％、好ましくは０．５〜３．０％を有することが望ましい。上記圧縮率が上記範囲内にあれば十分に平坦化特性と均一性を両立させることが可能となる。 In the polishing pad of the present invention, it is desirable that the polyurethane foam for the polishing layer has a compression ratio of 0.5 to 5.0%, preferably 0.5 to 3.0%. If the compression ratio is within the above range, it is possible to sufficiently achieve both flattening characteristics and uniformity.
本発明の研磨パッドは、研磨終点検出用の光透過領域を有する研磨パッドであってもよい。上記光透過領域を有する場合、上記光透過領域の研磨層側表面に研磨液を保持・更新する凹凸構造を有しないことが好ましい。上記光透過領域の研磨層側表面にマクロな表面凹凸があると、凹部に砥粒等の添加剤を含有したスラリーが溜まり、光の散乱・吸収が起こり、検出精度に大きな影響を及ぼす傾向にある。さらに、上記光透過領域の他面側表面もマクロな表面凹凸を有しないことが好ましい。同様に、マクロな表面凹凸があると、光の散乱が起こりやすく、検出精度に影響を及ぼすおそれがあるからである。 The polishing pad of the present invention may be a polishing pad having a light transmission region for detecting a polishing end point. In the case of having the light transmission region, it is preferable that the light transmission region does not have an uneven structure for holding and updating the polishing liquid on the polishing layer side surface. If there is macroscopic surface irregularities on the polishing layer side surface of the light transmission region, slurry containing additives such as abrasive grains accumulates in the concave portions, light scattering and absorption occur, and the detection accuracy tends to be greatly affected. is there. Furthermore, it is preferable that the other surface side surface of the light transmission region does not have macro surface irregularities. Similarly, if there are macro surface irregularities, light scattering is likely to occur, which may affect detection accuracy.
本発明の研磨パッドにおける上記光透過領域の形成材料は、波長６００〜７００ｎｍの全領域における光透過率が５０％以上であり、研磨層の圧縮率より大きい圧縮率を有するものが好ましく、かかる性能を有するものであれば特に制限されない。そのような材料の例として、例えばポリウレタン樹脂、ポリエステル樹脂、ポリアミド樹脂、アクリル樹脂、ポリカーボネート樹脂、ハロゲン系樹脂（ポリ塩化ビニル、ポリテトラフルオロエチレン、ポリフッ化ビニリデンなど）、ポリスチレン、オレフィン系樹脂（ポリエチレン、ポリプロピレンなど）、エポキシ樹脂などが挙げられる。これらは単独で用いてもよく、２種以上を併用してもよい。上記材料の中でも、研磨中のドレッシング痕による光透過領域の光散乱を抑制できるため、耐摩耗性の高いポリウレタン樹脂が望ましい。 The material for forming the light transmission region in the polishing pad of the present invention preferably has a light transmittance of 50% or more in the entire region of a wavelength of 600 to 700 nm, and has a compression rate larger than the compression rate of the polishing layer. If it has, it will not be restrict | limited in particular. Examples of such materials include, for example, polyurethane resins, polyester resins, polyamide resins, acrylic resins, polycarbonate resins, halogen resins (polyvinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, etc.), polystyrene, olefin resins (polyethylene). And polypropylene) and epoxy resins. These may be used alone or in combination of two or more. Among the above materials, polyurethane resin having high wear resistance is desirable because light scattering in the light transmission region due to dressing marks during polishing can be suppressed.
上記光透過領域の形成材料としてのポリウレタン樹脂は、有機イソシアネート、ポリオール、及び鎖延長剤を含有してなるものである。 The polyurethane resin as the material for forming the light transmission region contains an organic isocyanate, a polyol, and a chain extender.
有機イソシアネートとしては、２，４‐トルエンジイソシアネート、２，６‐トルエンジイソシアネート、２，２’‐ジフェニルメタンジイソシアネート、２，４’‐ジフェニルメタンジイソシアネート、４，４’‐ジフェニルメタンジイソシアネート、１，５‐ナフタレンジイソシアネート、ｐ‐フェニレンジイソシアネート、ｍ‐フェニレンジイソシアネート、ｐ‐キシリレンジイソシアネート、ｍ‐キシリレンジイソシアネート、ヘキサメチレンジイソシアネート、１，４‐シクロヘキサンジイソシアネート、４，４’‐ジシクロへキシルメタンジイソシアネート、イソホロンジイソシアネート等が挙げられる。これらは単独で用いてもよく、２種以上を併用してもよい。 Examples of the organic isocyanate include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 2,2′-diphenylmethane diisocyanate, 2,4′-diphenylmethane diisocyanate, 4,4′-diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate, Examples include p-phenylene diisocyanate, m-phenylene diisocyanate, p-xylylene diisocyanate, m-xylylene diisocyanate, hexamethylene diisocyanate, 1,4-cyclohexane diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, isophorone diisocyanate, and the like. . These may be used alone or in combination of two or more.
また、有機イソシアネートとしては、上記ジイソシアネート化合物の他に、３官能以上の多官能イソシアネート化合物も使用可能である。多官能イソシアネート化合物としては、デスモジュール−Ｎ（バイエル社製）や商品名デュラネート（旭化成工業社製）として一連のジイソシアネートアダクト体化合物が市販されている。これら３官能以上の多官能イソシアネート化合物は、単独で使用するとプレポリマー合成に際してゲル化しやすいため、ジイソシアネート化合物に添加して使用することが好ましい。 In addition to the diisocyanate compound, a trifunctional or higher polyfunctional isocyanate compound can be used as the organic isocyanate. As a polyfunctional isocyanate compound, a series of diisocyanate adduct compounds are commercially available as Desmodur-N (manufactured by Bayer) or trade name Duranate (manufactured by Asahi Kasei Kogyo Co., Ltd.). These trifunctional or higher polyfunctional isocyanate compounds, when used alone, are easily gelled during prepolymer synthesis, and are therefore preferably used by adding to the diisocyanate compound.
ポリオールとしては、ポリテトラメチレンエーテルグリコールに代表されるポリエーテルポリオール、ポリブチレンアジペートに代表されるポリエステルポリオール、ポリカプロラクトンポリオール、ポリカプロラクトンのようなポリエステルグリコールとアルキレンカーボネートとの反応物などで例示されるポリエステルポリカーボネートポリオール、エチレンカーボネートを多価アルコールと反応させ、次いで得られた反応混合物を有機ジカルボン酸と反応させたポリエステルポリカーボネートポリオール、及びポリヒドロキシル化合物とアリールカーボネートとのエステル交換反応により得られるポリカーボネートポリオールなどが挙げられる。これらは単独で用いてもよく、２種以上を併用してもよい。 Examples of the polyol include polyether polyols typified by polytetramethylene ether glycol, polyester polyols typified by polybutylene adipate, polycaprolactone polyols, reactants of polyester glycols such as polycaprolactone and alkylene carbonate, and the like. Polyester polycarbonate polyol, polyester polycarbonate polyol obtained by reacting ethylene carbonate with polyhydric alcohol and then reacting the obtained reaction mixture with organic dicarboxylic acid, polycarbonate polyol obtained by transesterification reaction between polyhydroxyl compound and aryl carbonate, etc. Is mentioned. These may be used alone or in combination of two or more.
また、上述したポリオールの他に、エチレングリコール、１，２‐プロピレングリコール、１，３‐プロピレングリコール、１，４‐ブタンジオール、１，６‐ヘキサンジオール、ネオペンチルグリコール、１，４‐シクロヘキサンジメタノール、３‐メチル‐１，５‐ペンタンジオール、ジエチレングリコール、トリエチレングリコール、１，４‐ビス（２‐ヒドロキシエトキシ）ベンゼン等の低分子量ポリオールを併用してもよい。 In addition to the polyols described above, ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,4-butanediol, 1,6-hexanediol, neopentyl glycol, 1,4-cyclohexanedi Low molecular weight polyols such as methanol, 3-methyl-1,5-pentanediol, diethylene glycol, triethylene glycol and 1,4-bis (2-hydroxyethoxy) benzene may be used in combination.
鎖延長剤としては、エチレングリコール、１，２‐プロピレングリコール、１，３‐プロピレングリコール、１，４‐ブタンジオール、１，６‐ヘキサンジオール、ネオペンチルグリコール、１，４‐シクロヘキサンジメタノール、３‐メチル‐１，５‐ペンタンジオール、ジエチレングリコール、トリエチレングリコール、１，４‐ビス（２‐ヒドロキシエトキシ）ベンゼン等の低分子量ポリオール類、あるいは２，４‐トルエンジアミン、２，６‐トルエンジアミン、３，５‐ジエチル‐２，４‐トルエンジアミン、４，４’‐ジ‐ｓｅｃ‐ブチル‐ジアミノジフェニルメタン、４，４’‐ジアミノジフェニルメタン、３，３’‐ジクロロ‐４，４’‐ジアミノジフェニルメタン、２，２’，３，３’‐テトラクロロ−４，４’‐ジアミノジフェニルメタン、４，４’‐ジアミノ‐３，３’‐ジエチル‐５，５’‐ジメチルジフェニルメタン、３，３’‐ジエチル‐４，４’‐ジアミノジフェニルメタン、４，４’‐メチレン‐ビス‐メチルアンスラニレート、４，４’‐メチレン‐ビス‐アンスラニリックアシッド、４，４’‐ジアミノジフェニルスルフォン、Ｎ，Ｎ’‐ジ‐ｓｅｃ‐ブチル‐ｐ‐フェニレンジアミン、４，４'‐メチレン‐ビス（３‐クロロ‐２，６‐ジエチルアミン）、３，３’‐ジクロロ‐４，４’‐ジアミノ‐５，５’‐ジエチルジフェニルメタン、１，２‐ビス（２‐アミノフェニルチオ）エタン、トリメチレングリコール‐ジ‐ｐ‐アミノベンゾエート、３，５‐ビス（メチルチオ）‐２，４‐トルエンジアミン等に例示されるポリアミン類を挙げることができる。これらは１種で用いても、２種以上を混合しても差し支えない。ただし、ポリアミン類については自身が着色していたり、これらを用いてなる樹脂が着色する場合も多いため、物性や光透過性を損なわない程度に配合することが好ましい。 Chain extenders include ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,4-butanediol, 1,6-hexanediol, neopentyl glycol, 1,4-cyclohexanedimethanol, 3 -Low molecular weight polyols such as -methyl-1,5-pentanediol, diethylene glycol, triethylene glycol, 1,4-bis (2-hydroxyethoxy) benzene, or 2,4-toluenediamine, 2,6-toluenediamine, 3,5-diethyl-2,4-toluenediamine, 4,4′-di-sec-butyl-diaminodiphenylmethane, 4,4′-diaminodiphenylmethane, 3,3′-dichloro-4,4′-diaminodiphenylmethane, 2,2 ', 3,3'-tetrachloro-4,4'-diamy Diphenylmethane, 4,4'-diamino-3,3'-diethyl-5,5'-dimethyldiphenylmethane, 3,3'-diethyl-4,4'-diaminodiphenylmethane, 4,4'-methylene-bis-methylanthra Nilate, 4,4'-methylene-bis-anthranilic acid, 4,4'-diaminodiphenylsulfone, N, N'-di-sec-butyl-p-phenylenediamine, 4,4'-methylene-bis (3-chloro-2,6-diethylamine), 3,3'-dichloro-4,4'-diamino-5,5'-diethyldiphenylmethane, 1,2-bis (2-aminophenylthio) ethane, trimethylene Polyamines exemplified by glycol-di-p-aminobenzoate and 3,5-bis (methylthio) -2,4-toluenediamine Rukoto can. These may be used alone or in combination of two or more. However, since the polyamines are often colored themselves or resins formed using these are colored in many cases, it is preferable to blend them so as not to impair the physical properties and light transmittance.
上記ポリウレタン樹脂における有機イソシアネート、ポリオール、及び鎖延長剤の比は、各々の分子量やこれらから製造される光透過領域の所望物性などにより適宜変更できる。上記光透過領域の形成材料が上記所望の特性を得るためには、ポリオールと鎖延長剤の合計官能基（水酸基＋アミノ基）数に対する有機イソシアネートのイソシアネート基数が０．９５〜１．１５であることが好ましく、さらに好ましくは０．９９〜１．１０である。 The ratio of the organic isocyanate, polyol, and chain extender in the polyurethane resin can be appropriately changed depending on the molecular weight of each and the desired physical properties of the light transmission region produced therefrom. In order for the material for forming the light transmission region to obtain the desired characteristics, the number of isocyanate groups of the organic isocyanate is 0.95 to 1.15 with respect to the total number of functional groups (hydroxyl group + amino group) of the polyol and the chain extender. It is preferably 0.99 to 1.10.
上記ポリウレタン樹脂は、溶融法、溶液法など公知のウレタン化技術を応用して製造することができるが、コスト、作業環境などを考慮した場合、溶融法で製造することが好ましい。 The polyurethane resin can be produced by applying a known urethanization technique such as a melting method or a solution method, but it is preferable to produce the polyurethane resin by a melting method in consideration of cost, working environment, and the like.
上記ポリウレタン樹脂の重合手順としては、プレポリマー法、ワンショット法のどちらでも可能であるが、事前に有機イソシアネートとポリオールからイソシアネート末端プレポリマーを合成しておき、これに鎖延長剤を反応させるプレポリマー法が一般的である。なお、有機イソシアネートとポリオールから製造されるイソシアネート末端プレポリマーが市販されているが、本発明に適合するものであれば、それらを用いて、プレポリマー法により本発明で使用するポリウレタンを重合することも可能である。 As the polymerization procedure of the polyurethane resin, either a prepolymer method or a one-shot method is possible, but an isocyanate-terminated prepolymer is synthesized beforehand from an organic isocyanate and a polyol and reacted with a chain extender. The polymer method is common. In addition, although the isocyanate terminal prepolymer manufactured from organic isocyanate and a polyol is marketed, if it suits this invention, polymerize the polyurethane used by this invention by a prepolymer method using them. Is also possible.
光透過領域の作製方法は特に制限されず、公知の方法により作製できる。例えば、上記方法により製造したポリウレタン樹脂のブロックをバンドソー方式やカンナ方式のスライサーを用いて所定厚さにする方法や所定厚さのキャビティーを持った金型に樹脂を流し込み硬化させる方法や、コーティング技術やシート成形技術を用いた方法などが用いられる。なお、光透過領域に気泡がある場合には、光の散乱により反射光の減衰が大きくなり研磨終点の検出精度や膜厚の測定精度が低下する傾向にある。したがって、このような気泡を除去するために上記材料を混合する前に１０ Ｔｏｒｒ以下に減圧することにより材料中に含まれる気体を十分に除去することが好ましい。また、混合後の撹拌工程においては気泡が混入しないように、通常用いられる撹拌翼式ミキサーの場合には、回転数１００ｒｐｍ以下で撹拌することが好ましい。また、撹拌工程においても減圧下で行うことが好ましい。さらに、自転公転式混合機は、高回転でも気泡が混入しにくいため、該混合機を用いて撹拌、脱泡を行うことも好ましい方法である。 The method for producing the light transmission region is not particularly limited, and can be produced by a known method. For example, a polyurethane resin block produced by the above method is made to a predetermined thickness using a band saw type or canna type slicer, a method in which the resin is poured into a mold having a cavity of a predetermined thickness, and a coating is applied. A method using a technique or a sheet forming technique is used. If there are bubbles in the light transmission region, the attenuation of the reflected light increases due to light scattering, and the detection accuracy of the polishing end point and the measurement accuracy of the film thickness tend to decrease. Therefore, it is preferable to sufficiently remove the gas contained in the material by reducing the pressure to 10 Torr or less before mixing the material in order to remove such bubbles. Moreover, in the stirring process after mixing, in the case of the stirring blade type mixer normally used, it is preferable to stir at the rotation speed of 100 rpm or less so that bubbles may not mix. In addition, the stirring step is preferably performed under reduced pressure. Furthermore, since the rotation and revolution type mixer is difficult to mix bubbles even at high rotation, it is also preferable to perform stirring and defoaming using the mixer.
光透過領域の形状は特に制限されるものではないが、研磨層およびクッション層の開口部と同様の形状にすることが好ましい。 The shape of the light transmission region is not particularly limited, but is preferably the same shape as the openings of the polishing layer and the cushion layer.
光透過領域の大きさは特に制限されるものではないが、研磨層およびクッション層の開口部と同程度の大きさにすることが好ましい。 The size of the light transmission region is not particularly limited, but it is preferable that the size of the light transmission region is approximately the same as the opening size of the polishing layer and the cushion layer.
本発明の研磨パッドにおける研磨層は、発泡ポリウレタンから形成され、かつ曲げ弾性率２５０〜３５０ＭＰａを有すれば、その材料は特に制限なく使用できる。本発明において研磨層に発泡ポリウレタンを用いるのは、表面にある気泡部分にスラリーを保持することができ、研磨速度を大きくすることができ、またポリウレタン樹脂は耐摩耗性に優れ、原料組成を種々変えることにより所望の物性を有するポリマーを容易に得ることができるからである。 If the polishing layer in the polishing pad of the present invention is formed of foamed polyurethane and has a flexural modulus of 250 to 350 MPa, the material can be used without any particular limitation. In the present invention, the foamed polyurethane is used for the polishing layer because the slurry can be held in the bubble portion on the surface, the polishing rate can be increased, and the polyurethane resin is excellent in wear resistance, and various raw material compositions are used. This is because a polymer having desired physical properties can be easily obtained by changing the thickness.
上記研磨層用ポリウレタン樹脂は、上記光透過領域に用いたものと同様に、有機イソシアネート、ポリオール、鎖延長剤を含有してなるものである。 The said polyurethane resin for polishing layers contains organic isocyanate, a polyol, and a chain extender similarly to what was used for the said light transmissive area | region.
上記研磨層用ポリウレタン樹脂に使用する有機イソシアネートは特に制限されず、例えば上記光透過領域形成材料用のポリウレタン樹脂に用いたものと同様の有機イソシアネートが挙げられる。 The organic isocyanate used for the polishing layer polyurethane resin is not particularly limited, and examples thereof include organic isocyanates similar to those used for the polyurethane resin for the light transmission region forming material.
上記研磨層用ポリウレタン樹脂に使用するポリオールは特に制限されず、例えば上記光透過領域形成材料用のポリウレタン樹脂に用いたものと同様のポリオールが挙げられる。なお、研磨層用ポリウレタン樹脂に使用する場合、これらポリオールの数平均分子量は特に限定されるものではないが、得られるポリウレタンの弾性特性等の観点から５００〜２０００であることが好ましい。 The polyol used in the polishing layer polyurethane resin is not particularly limited, and examples thereof include the same polyols as those used in the polyurethane resin for the light transmission region forming material. In addition, when using for the polyurethane resin for polishing layers, the number average molecular weight of these polyols is not particularly limited, but is preferably 500 to 2,000 from the viewpoint of the elastic properties of the resulting polyurethane.
また、ポリオールとしては、上記のような高分子量のポリオールの他に、エチレングリコール、１，２‐プロピレングリコール、１，３‐プロピレングリコール、１，４‐ブタンジオール、１，６‐ヘキサンジオール、ネオペンチルグリコール、１，４‐シクロヘキサンジメタノール、３‐メチル‐１，５‐ペンタンジオール、ジエチレングリコール、トリエチレングリコール、１，４‐ビス（２‐ヒドロキシエトキシ）ベンゼン等の低分子量ポリオールを併用することもできる。 In addition to the above high molecular weight polyols, the polyols include ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,4-butanediol, 1,6-hexanediol, neodymium, and the like. Low molecular weight polyols such as pentyl glycol, 1,4-cyclohexanedimethanol, 3-methyl-1,5-pentanediol, diethylene glycol, triethylene glycol, and 1,4-bis (2-hydroxyethoxy) benzene may be used in combination. it can.
また、ポリオール中の高分子量成分と低分子量成分の比は、これらから製造される研磨層に要求される特性により決められる。 Further, the ratio of the high molecular weight component to the low molecular weight component in the polyol is determined by the characteristics required for the polishing layer produced therefrom.
上記研磨層用ポリウレタン樹脂に使用する鎖延長剤としては、４，４’‐メチレンビス（ｏ‐クロロアニリン）、２，６‐ジクロロ‐ｐ‐フェニレンジアミン、４，４’‐メチレンビス（２，３‐ジクロロアニリン）等に例示されるポリアミン類、あるいは、上述した低分子量ポリオールを挙げることができる。これらは１種で用いても、２種以上を併用してもよい。 Examples of the chain extender used in the polishing layer polyurethane resin include 4,4′-methylenebis (o-chloroaniline), 2,6-dichloro-p-phenylenediamine, 4,4′-methylenebis (2,3- Examples thereof include polyamines exemplified by dichloroaniline) and the like, and the low molecular weight polyol described above. These may be used alone or in combination of two or more.
上記ポリウレタン樹脂における有機イソシアネート、ポリオール、及び鎖延長剤の比は、各々の分子量やこれらから製造される研磨層の物性などにより種々変え得るが、曲げ弾性率２５０〜３５０ＭＰａを有する発泡体を得ることができるものでなければならない。研磨特性に優れる研磨層を得るためには、ポリオールと鎖延長剤の合計官能基（水酸基＋アミノ基）数に対する有機イソシアネートのイソシアネート基数は０．９５〜１．１５であることが好ましく、さらに好ましくは０．９９〜１．１０である。 The ratio of the organic isocyanate, polyol, and chain extender in the polyurethane resin can be variously changed depending on the respective molecular weights and physical properties of the polishing layer produced therefrom, but a foam having a flexural modulus of 250 to 350 MPa is obtained. Must be able to In order to obtain a polishing layer having excellent polishing characteristics, the number of isocyanate groups of the organic isocyanate relative to the total number of functional groups (hydroxyl group + amino group) of the polyol and the chain extender is preferably 0.95 to 1.15, and more preferably Is 0.99 to 1.10.
上記研磨層用ポリウレタン樹脂は、上記光透過領域形成材料用ポリウレタン樹脂と同様の方法により製造することができる。なお、必要に応じてポリウレタン樹脂に酸化防止剤等の安定剤、界面活性剤、滑剤、顔料、充填剤、帯電防止剤、その他の添加剤を添加してもよい。 The polyurethane resin for polishing layer can be produced by the same method as the polyurethane resin for light transmitting region forming material. If necessary, stabilizers such as antioxidants, surfactants, lubricants, pigments, fillers, antistatic agents, and other additives may be added to the polyurethane resin.
上記ポリウレタン樹脂を微細発泡させる方法は特に制限されないが、例えば中空ビーズを添加する方法、機械的発泡法、及び化学的発泡法等により発泡させる方法などが挙げられる。なお、各方法を併用してもよいが、特にポリアルキルシロキサンとポリエーテルとの共重合体であって活性水素基を有しないシリコーン系界面活性剤を使用した機械的発泡法が好ましい。上記シリコーン系界面活性剤としては、ＳＨ‐１９２（東レ・ダウコーニング・シリコーン製）等が好適な化合物として例示される。 The method of finely foaming the polyurethane resin is not particularly limited, and examples thereof include a method of adding hollow beads, a method of foaming by a mechanical foaming method, a chemical foaming method, and the like. In addition, although each method may be used together, the mechanical foaming method using the silicone type surfactant which is a copolymer of polyalkylsiloxane and polyether and does not have an active hydrogen group is preferable. Examples of the silicone surfactant include SH-192 (made by Toray / Dow Corning / Silicone) as a suitable compound.
本発明の研磨パッドの研磨層に用いられる独立気泡タイプの発泡ポリウレタンを製造する方法について以下に説明する。上記発泡ポリウレタンの製造方法は、以下の工程（ａ）〜（ｃ）を有する。
（ａ）イソシアネート末端プレポリマーの気泡分散液を作製する撹拌工程
イソシアネート末端プレポリマーにシリコーン系界面活性剤を添加し、非反応性気体と撹拌し、非反応性気体を微細気泡として分散させて気泡分散液とする。イソシアネート末端プレポリマーが常温で固体の場合には適宜の温度に予熱し、溶融して使用する。
（ｂ）硬化剤（鎖延長剤）混合工程
上記の気泡分散液に鎖延長剤を添加し、混合撹拌する。
（ｃ）硬化工程
鎖延長剤を混合したイソシアネート末端プレポリマーを注型し、加熱硬化させる。
A method for producing a closed-cell type foamed polyurethane used for the polishing layer of the polishing pad of the present invention will be described below. The manufacturing method of the said polyurethane foam has the following processes (a)-(c).
(A) Stirring step for preparing an isocyanate-terminated prepolymer bubble dispersion A silicone-based surfactant is added to the isocyanate-terminated prepolymer, and the mixture is stirred with a non-reactive gas to disperse the non-reactive gas as fine bubbles. A dispersion is obtained. When the isocyanate-terminated prepolymer is solid at room temperature, it is preheated to an appropriate temperature and melted before use.
(B) Curing Agent (Chain Extender) Mixing Step A chain extender is added to the cell dispersion and mixed and stirred.
(C) Curing step An isocyanate-terminated prepolymer mixed with a chain extender is cast and cured by heating.
上記非反応性気体は、微細気泡を形成するために使用されるが、可燃性でないものが好ましく、具体的には窒素、酸素、炭酸ガス、ヘリウムやアルゴン等の希ガスやこれらの混合気体が例示され、乾燥して水分を除去した空気の使用がコスト的にも最も好ましい。 The non-reactive gas is used to form fine bubbles, but is preferably non-flammable, specifically nitrogen, oxygen, carbon dioxide, rare gas such as helium or argon, or a mixed gas thereof. The use of air that is exemplified and dried to remove moisture is most preferable in terms of cost.
非反応性気体を微細気泡状にしてシリコーン系界面活性剤を含むイソシアネート末端プレポリマーに分散させる撹拌装置としては、公知の撹拌装置を特に限定なく使用可能であり、具体的にはホモジナイザー、ディゾルバー、２軸遊星型ミキサー（プラネタリーミキサー）等が例示される。撹拌装置の撹拌翼の形状も特に限定されないが、ホイッパー型の撹拌翼を使用すると微細気泡が得られるため好ましい。 As a stirring device for making non-reactive gas into fine bubbles and dispersing it in an isocyanate-terminated prepolymer containing a silicone-based surfactant, a known stirring device can be used without particular limitation. Specifically, a homogenizer, a dissolver, A two-axis planetary mixer (planetary mixer) is exemplified. The shape of the stirring blade of the stirring device is not particularly limited, but it is preferable to use a whipper-type stirring blade because fine bubbles can be obtained.
なお、撹拌工程において気泡分散液を作成する撹拌と、混合工程における鎖延長剤を添加して混合する撹拌は、異なる撹拌装置を使用することも好ましい態様である。特に混合工程における撹拌は気泡を形成する撹拌でなくてもよく、大きな気泡を巻き込まない撹拌装置の使用が好ましい。このような撹拌装置としては、遊星型ミキサーが好適である。撹拌工程と混合工程の撹拌装置を同一の撹拌装置を使用しても支障はなく、必要に応じて撹拌翼の回転速度等の撹拌条件の調整を行って使用することも好適である。 In addition, it is also a preferable aspect to use a different stirring apparatus for the stirring which produces a bubble dispersion liquid in the stirring process, and the stirring which adds and mixes the chain extender in a mixing process. In particular, the stirring in the mixing step may not be stirring that forms bubbles, and it is preferable to use a stirring device that does not involve large bubbles. As such an agitator, a planetary mixer is suitable. There is no problem even if the same stirring device is used as the stirring device in the stirring step and the mixing step, and it is also preferable to use the stirring device by adjusting the stirring conditions such as the rotation speed of the stirring blade as necessary.
上記発泡ポリウレタンの製造方法においては、気泡分散液を型に流し込んで流動しなくなるまで反応した発泡体を加熱、ポストキュアすることは、発泡体の物理的特性を向上させる効果があり極めて好適である。金型に気泡分散液を流し込んで直ちに加熱オーブン中に入れてポストキュアを行う条件としてもよく、そのような条件下でもすぐに反応成分に熱が伝達されないので気泡径が大きくなることはない。硬化反応は、常圧で行うと気泡形状が安定するため好ましい。 In the method for producing foamed polyurethane, it is very preferable to heat and post-cure the reacted foam until the foam dispersion is poured into the mold and no longer flows, because it has the effect of improving the physical properties of the foam. . The bubble dispersion may be poured into the mold and immediately placed in a heating oven for post-cure. Under such conditions, heat is not immediately transferred to the reaction components, and the bubble diameter does not increase. The curing reaction is preferably performed at normal pressure because the bubble shape is stable.
上記ポリウレタン樹脂の製造において、第３級アミン系、有機スズ系等の公知のポリウレタン反応を促進する触媒を使用してもよい。触媒の種類、添加量は、混合工程後、所定形状の型に流し込む流動時間を考慮して選択する。 In the production of the polyurethane resin, a catalyst that promotes a known polyurethane reaction such as tertiary amine or organotin may be used. The type and addition amount of the catalyst are selected in consideration of the flow time for pouring into a mold having a predetermined shape after the mixing step.
上記発泡ポリウレタンの製造は、容器に各成分を計量して投入し、撹拌するバッチ方式であっても、また撹拌装置に各成分と非反応性気体を連続して供給して撹拌し、気泡分散液を送り出して成形品を製造する連続生産方式であってもよい。 The above polyurethane foam can be produced in a batch system in which each component is weighed into a container and stirred. Alternatively, each component and a non-reactive gas are continuously supplied to the stirrer and stirred to disperse the bubbles. It may be a continuous production method in which a liquid is fed to produce a molded product.
本発明の研磨パッドに用いられる研磨層は、以上のようにして作製された発泡ポリウレタンを、所定のサイズに裁断して製造される。 The polishing layer used in the polishing pad of the present invention is produced by cutting the polyurethane foam prepared as described above into a predetermined size.
本発明の発泡ポリウレタンからなる研磨層は、被研磨対象物と接触する研磨側表面（研磨領域）に、スラリーを保持・更新するための溝が設けられていることが好ましい。上記研磨領域は、微細発泡体により形成されているため研磨表面に多くの開口を有し、スラリーを保持する働きを持っているが、更なるスラリーの保持性とスラリーの更新を効率よく行うため、また被研磨対象物との吸着による被研磨対象物の破壊を防ぐためにも、研磨側表面に溝を有することが好ましい。溝は、スラリーを保持・更新する表面形状であれば特に限定されるものではなく、例えば、ＸＹ格子溝、同心円状溝、貫通孔、貫通していない穴、多角柱、円柱、螺旋状溝、偏心円状溝、放射状溝、及びこれらの溝を組み合わせたものが挙げられる。また、溝ピッチ、溝幅、溝深さ等も特に制限されず適宜選択して形成される。さらに、これらの溝は規則性のあるものが一般的であるが、スラリーの保持・更新性を望ましいものにするため、ある範囲ごとに溝ピッチ、溝幅、溝深さ等を変化させることも可能である。 In the polishing layer made of the polyurethane foam of the present invention, it is preferable that a groove for holding and renewing the slurry is provided on the polishing side surface (polishing region) in contact with the object to be polished. Since the polishing region is formed of a fine foam, it has a large number of openings on the polishing surface and has a function of holding the slurry. However, in order to efficiently further maintain the slurry and renew the slurry. In order to prevent destruction of the object to be polished due to adsorption with the object to be polished, it is preferable to have a groove on the surface on the polishing side. The groove is not particularly limited as long as it is a surface shape that holds and renews the slurry. For example, XY lattice grooves, concentric circular grooves, through holes, non-through holes, polygonal columns, cylinders, spiral grooves, Examples include eccentric circular grooves, radial grooves, and combinations of these grooves. Further, the groove pitch, groove width, groove depth and the like are not particularly limited and are appropriately selected and formed. In addition, these grooves are generally regular, but the groove pitch, groove width, groove depth, etc. may be changed for each range to make the slurry retention and renewability desirable. Is possible.
上記溝の形成方法は特に限定されるものではないが、例えば、所定サイズのバイトのような治具を用い機械切削する方法、所定の表面形状を有した金型に樹脂を流しこみ硬化させる方法、所定の表面形状を有したプレス板で樹脂をプレスして形成する方法、フォトリソグラフィーを用いて形成する方法、印刷手法を用いて形成する方法、及び炭酸ガスレーザーなどを用いたレーザー光により形成する方法などが挙げられる。 The method of forming the groove is not particularly limited. For example, a method of machine cutting using a jig such as a tool of a predetermined size, a method of pouring and hardening a resin in a mold having a predetermined surface shape , A method of pressing a resin with a press plate having a predetermined surface shape, a method of forming using photolithography, a method of forming using a printing technique, and a laser beam using a carbon dioxide gas laser, etc. The method of doing is mentioned.
本発明の研磨パッドにおいて、上記研磨層の厚さは特に限定されるものではないが、厚さ０．５〜４ｍｍ程度が好ましく、さらに好ましくは０．６〜３．５ｍｍである。上記厚さを有する研磨層を作製する方法としては、上記発泡体のブロックをバンドソー方式やカンナ方式のスライサーを用いて所定厚さにする方法、所定厚さのキャビティーを持った金型に樹脂を流し込み硬化させる方法、及びコーティング技術やシート成形技術を用いた方法などが挙げられる。 In the polishing pad of the present invention, the thickness of the polishing layer is not particularly limited, but is preferably about 0.5 to 4 mm, more preferably 0.6 to 3.5 mm. As a method for producing a polishing layer having the above thickness, a method of making the foam block a predetermined thickness using a band saw type or canna type slicer, a resin in a mold having a cavity of a predetermined thickness And a method using a coating technique and a sheet forming technique.
また、研磨層の厚さのバラツキは、１００μｍ以下であることが好ましく、特に５０μｍ以下であることが好ましい。厚さのバラツキが１００μｍを越える場合には、研磨層が大きなうねりを持ったものとなり、被研磨対象物に対する接触状態が異なる部分ができ、研磨特性に悪影響を与える傾向にある。また、研磨層の厚さのバラツキを解消するため、一般的には研磨初期に研磨層の表面をダイヤモンド砥粒を電着、又は融着させたドレッサーを用いてドレッシングするが、上記厚さのバラツキの上限を超えたものは、ドレッシング時間が長くなり、生産効率を低下させることになる。また、厚さのバラツキを抑える方法としては、所定厚さにした研磨領域表面をバフィングする方法もある。バフィングする際には、粒度などが異なる研磨シートで段階的に行うことが好ましい。 Further, the variation in the thickness of the polishing layer is preferably 100 μm or less, and particularly preferably 50 μm or less. When the thickness variation exceeds 100 μm, the polishing layer has a large undulation, and there are portions where the contact state with the object to be polished is different, which tends to adversely affect the polishing characteristics. In order to eliminate the variation in the thickness of the polishing layer, the surface of the polishing layer is generally dressed with a dresser in which diamond abrasive grains are electrodeposited or fused in the initial stage of polishing. If the variation exceeds the upper limit, the dressing time becomes longer and the production efficiency is lowered. Further, as a method of suppressing the variation in thickness, there is a method of buffing the surface of the polishing region having a predetermined thickness. When buffing, it is preferable to carry out stepwise with abrasive sheets having different particle sizes.
研磨層および（光透過領域と）クッション層を有する積層研磨パッドの作成方法は特に制限されず、種々の方法が考えられるが、具体的な例を以下に説明する。以下光透過領域を有する場合における方法を例示したが光透過領域のない場合においては光透過領域用の開口を設けずに作成すればよいものである。 A method for producing a laminated polishing pad having a polishing layer and a cushion layer (with a light transmission region) is not particularly limited, and various methods are conceivable. Specific examples will be described below. In the following, the method in the case of having a light transmission region is exemplified, but in the case of no light transmission region, it may be formed without providing an opening for the light transmission region.
まず１つめの例は、所定位置に所定の大きさに開口した研磨層を両面テープと貼り合わせ、その下に研磨層の開口部に合わせるように、所定の大きさに開口したクッション層を貼り合わせる。次に、クッション層に離型紙のついた両面テープを貼りあわせ、研磨層の開口部に光透過領域をはめ込み、貼り合わせる方法である。 In the first example, a polishing layer opened to a predetermined size at a predetermined position is bonded to a double-sided tape, and a cushion layer opened to a predetermined size is bonded to the opening of the polishing layer below the double-sided tape. Match. Next, a double-sided tape with release paper is bonded to the cushion layer, and a light transmission region is fitted into the opening of the polishing layer, and then bonded.
２つめの具体例としては、所定の大きさに開口した研磨層を両面テープと貼り合わせ、その下にクッション層を貼り合わせる。その後、研磨層の開口部に合わせるように、両面テープ、及びクッション層を所定の大きさに開口する。次に、クッション層に離型紙のついた両面テープを貼りあわせ、研磨層の開口部に光透過領域をはめ込み、貼り合わせる方法である。 As a second specific example, a polishing layer having a predetermined size is bonded to a double-sided tape, and a cushion layer is bonded to the bottom. Thereafter, the double-sided tape and the cushion layer are opened to a predetermined size so as to match the opening of the polishing layer. Next, a double-sided tape with release paper is bonded to the cushion layer, and a light transmission region is fitted into the opening of the polishing layer, and then bonded.
３つめの具体例としては、所定の大きさに開口した研磨層を両面テープと貼り合わせ、その下にクッション層を貼り合わせる。次に、クッション層の反対面に離型紙のついた面テープを貼りあわせ、その後、研磨層の開口部に合わせるように、両面テープから離型紙まで所定の大きさに開口する。研磨層の開口部に光透過領域をはめ込み、貼り合わせる方法である。なおこの場合、光透過領域の反対側が開放された状態になり、埃等がたまる可能性があるため、それを塞ぐ部材を取り付けることが好ましい。 As a third specific example, a polishing layer having a predetermined size is bonded to a double-sided tape, and a cushion layer is bonded to the bottom. Next, a surface tape with a release paper is bonded to the opposite surface of the cushion layer, and then a predetermined size is opened from the double-sided tape to the release paper so as to match the opening of the polishing layer. In this method, a light transmission region is fitted into the opening of the polishing layer and bonded. In this case, since the opposite side of the light transmission region is in an open state and dust or the like may accumulate, it is preferable to attach a member that closes it.
４つめの具体例としては、離型紙のついた両面テープを貼り合わせたクッション層を所定の大きさに開口する。次に所定の大きさに開口した研磨層を両面テープと貼り合わせ、これらを開口部が合うように貼りあわせる。そして研磨層の開口部に光透過領域をはめ込み、貼り合わせる方法である。なおこの場合、研磨層の反対側が開放された状態になり、埃等がたまる可能性があるため、それを塞ぐ部材を取り付けることが好ましい。 As a fourth specific example, a cushion layer to which a double-sided tape with release paper is attached is opened to a predetermined size. Next, the polishing layer opened to a predetermined size is bonded to a double-sided tape, and these are bonded so that the openings match. Then, a light transmission region is fitted into the opening of the polishing layer and bonded. In this case, since the opposite side of the polishing layer is in an open state and dust or the like may accumulate, it is preferable to attach a member that closes it.
上記研磨パッドの作成方法において、研磨層やクッション層などを開口する手段は特に制限されるものではないが、例えば、切削能力をもつ治具をプレスして開口する方法、炭酸レーザーなどによるレーザーを利用する方法、及びバイトのような治具にて研削する方法などが挙げられる。なお、研磨層の開口部の大きさ及び形状は特に制限されない。 In the above-mentioned polishing pad preparation method, the means for opening the polishing layer, cushion layer, etc. is not particularly limited. For example, a method of pressing and opening a jig having cutting ability, a laser with a carbonic acid laser, etc. Examples thereof include a method of using and a method of grinding with a jig such as a cutting tool. The size and shape of the opening of the polishing layer are not particularly limited.
本発明の研磨パッドにおいて、クッション層は、上記研磨層の特性を補い両層の特性が相まって本発明の目的である研磨速度の向上と平坦化特性、面内均一性が同時に達成し得るものであり、前述のように、独立気泡発泡体から形成され、厚さ０．５〜１．０ｍｍおよび歪定数０．０１〜０．０８μｍ／（ｇｆ／ｃｍ２）を有することを必須要件とするものである。上記クッション層は、ＣＭＰにおいて、トレードオフの関係にある平坦化特性と面内均一性とを両立させるために必要なものである。平坦化特性とは、パターン形成時に発生する微小凹凸のある被研磨対象物を研磨した時のパターン部の平坦性をいい、面内均一性とは、被研磨対象物全体の均一性をいう。 In the polishing pad of the present invention, the cushion layer compensates for the characteristics of the above-mentioned polishing layer, and the characteristics of both layers, combined with the characteristics of the two layers, can simultaneously achieve the improvement of the polishing rate, the planarization characteristics, and the in-plane uniformity. Yes, as mentioned above, it is formed from closed-cell foams and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 μm / (gf / cm 2 ). It is. The above-mentioned cushion layer is necessary for achieving both planarization characteristics and in-plane uniformity which are in a trade-off relationship in CMP. The flattening characteristic refers to the flatness of the pattern portion when the object to be polished having minute irregularities generated during pattern formation is polished, and the in-plane uniformity refers to the uniformity of the entire object to be polished.
本発明の研磨パッドにおいて、上記クッション層は、独立気泡発泡体から形成され、厚さ０．５〜１．０ｍｍおよび歪定数０．０１〜０．０８μｍ／（ｇｆ／ｃｍ２）を有するものであれば、その形成材料は特に制限されないが、例えばポリウレタン樹脂、ポリエチレン樹脂などの高分子樹脂の独立気泡発泡体が挙げられる。 In the polishing pad of the present invention, the cushion layer is formed of a closed cell foam and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 μm / (gf / cm 2 ). If there is, the forming material is not particularly limited, and examples thereof include closed cell foams of polymer resins such as polyurethane resins and polyethylene resins.
ポリウレタン樹脂は、上記の光透過領域の作製において記載したポリウレタン樹脂から上記特性を備えたものとなり得る樹脂を選定すればよく、この選定された樹脂を用いて独立気泡発泡体を形成する。独立気泡発泡体を形成する方法は、上記研磨層作成方法として記載した方法から選択し採用すればよい。 As the polyurethane resin, a resin that can have the above characteristics may be selected from the polyurethane resins described in the preparation of the light transmission region, and a closed cell foam is formed using the selected resin. The method for forming the closed cell foam may be selected from the methods described as the polishing layer preparation method.
本発明において、研磨層とクッション層とを貼り合わせる手段としては、例えば、研磨層とクッション層とを両面テープで挟み、プレスする方法が挙げられる。 In the present invention, examples of means for bonding the polishing layer and the cushion layer include a method in which the polishing layer and the cushion layer are sandwiched with a double-sided tape and pressed.
両面テープは、不織布やフィルム等の基材の両面に接着層を設けた一般的な構成を有するものである。クッション層へのスラリーの浸透等を防ぐことを考慮すると、基材にフィルムを用いることが好ましい。また、接着層の組成としては、例えば、ゴム系接着剤やアクリル系接着剤等が挙げられる。金属イオンの含有量を考慮すると、アクリル系接着剤は金属イオン含有量が少ないため好ましい。また、研磨層とクッション層は組成が異なることもあるため、両面テープの各接着層の組成を異なるものとし、各層の接着力を適正化することも可能である。 The double-sided tape has a general configuration in which adhesive layers are provided on both sides of a substrate such as a nonwoven fabric or a film. In consideration of preventing the slurry from penetrating into the cushion layer, it is preferable to use a film for the substrate. Examples of the composition of the adhesive layer include rubber adhesives and acrylic adhesives. Considering the content of metal ions, an acrylic adhesive is preferable because the metal ion content is low. In addition, since the composition of the polishing layer and the cushion layer may be different, the composition of each adhesive layer of the double-sided tape can be made different so that the adhesive force of each layer can be optimized.
クッション層と両面テープとを貼り合わせる手段としては、クッション層に両面テープをプレスして接着する方法が挙げられる。この両面テープについては、上記研磨層とクッション層とを貼り合わせる両面テープと同様に、不織布やフィルム等の基材の両面に接着層を設けた一般的な構成を有するものである。研磨パッドの使用後に、プラテンから剥がすことを考慮すると、基材にフィルムを用いるとテープ残り等を解消することができるため好ましい。また、接着層の組成は上記研磨層とクッション層とを貼り合わせる両面テープと同様のものを使用することができる。 Examples of means for attaching the cushion layer and the double-sided tape include a method of pressing and bonding the double-sided tape to the cushion layer. About this double-sided tape, it has the general structure which provided the adhesive layer on both surfaces of base materials, such as a nonwoven fabric and a film, similarly to the double-sided tape which bonds the said grinding | polishing layer and a cushion layer. In consideration of peeling from the platen after using the polishing pad, it is preferable to use a film as the base material because the tape residue and the like can be eliminated. Further, the composition of the adhesive layer may be the same as that of the double-sided tape that bonds the polishing layer and the cushion layer.
半導体デバイスは、上記研磨パッドを用いて半導体ウエハの表面を研磨する工程を経て製造される。半導体ウエハとは、一般にシリコンウエハ上に配線金属及び酸化膜を積層したものである。半導体ウエハの研磨方法、研磨装置は特に制限されず、例えば、研磨パッドを支持する研磨定盤と、半導体ウエハを支持する支持台（ポリシングヘッド）とウエハへの均一加圧を行うためのバッキング材と、スラリーの供給機構を備えた研磨装置などを用いて行われる。研磨パッドは、例えば、両面テープで貼り付けることにより、研磨定盤に装着される。研磨定盤と支持台とは、それぞれに支持された研磨パッドと半導体ウエハが対向するように配置され、それぞれに回転軸を備えている。また、支持台側には、半導体ウエハを研磨パッドに押し付けるための加圧機構が設けてある。研磨に際しては、研磨定盤と支持台とを回転させつつ半導体ウエハを研磨パッドに押し付け、スラリーを供給しながら研磨を行う。スラリーの流量、研磨荷重、研磨定盤回転数、及びウエハ回転数は特に制限されず、適宜調整して行う。 A semiconductor device is manufactured through a process of polishing the surface of a semiconductor wafer using the polishing pad. A semiconductor wafer is generally a laminate of a wiring metal and an oxide film on a silicon wafer. The method and apparatus for polishing a semiconductor wafer are not particularly limited. For example, a polishing surface plate for supporting a polishing pad, a support base (polishing head) for supporting a semiconductor wafer, and a backing material for uniformly pressing the wafer And a polishing apparatus equipped with a slurry supply mechanism. For example, the polishing pad is attached to the polishing surface plate by pasting with a double-sided tape. The polishing surface plate and the support base are disposed so that the polishing pad and the semiconductor wafer supported by each surface face each other, and each has a rotation shaft. Further, a pressure mechanism for pressing the semiconductor wafer against the polishing pad is provided on the support base side. In polishing, the semiconductor wafer is pressed against the polishing pad while rotating the polishing surface plate and the support base, and polishing is performed while supplying slurry. The flow rate of the slurry, the polishing load, the polishing platen rotation speed, and the wafer rotation speed are not particularly limited and are appropriately adjusted.
これにより半導体ウエハの表面の突出した部分が除去されて平坦状に研磨される。その後、ダイシング、ボンディング、パッケージング等することにより半導体デバイスが製造される。半導体デバイスは、演算処理装置やメモリー等に用いられる。 As a result, the protruding portion of the surface of the semiconductor wafer is removed and polished flat. Thereafter, a semiconductor device is manufactured by dicing, bonding, packaging, or the like. The semiconductor device is used for an arithmetic processing device, a memory, and the like.
以下、本発明の構成と効果を具体的に示す実施例等について説明する。なお、実施例等における評価項目は下記のようにして測定した。 Examples and the like specifically showing the configuration and effects of the present invention will be described below. The evaluation items in Examples and the like were measured as follows.
（歪定数）
クッション層を直径０．５インチの円形サイズに切り取り歪定数測定用試料とし、温度２３℃±２℃、湿度６０％±１０％の環境下で、万能材料試験機（Ｉｎｓｔｒｏｎ社製 ｍｏｄｅｌ ５８４８）を用いて、圧縮速度０．１ｍｍ／分にて圧縮量と荷重を測定した。得られた圧縮荷重−圧縮変形量線図の荷重３００ｇｆ／ｃｍ２の時のデータ点から荷重１０００ｇｆ／ｃｍ２のデータ点を用いて１次近似した直線の勾配を用いて算出した。
(Strain constant)
The cushion layer is cut into a circular size of 0.5 inches in diameter and used as a strain constant measurement sample. Under a temperature of 23 ° C. ± 2 ° C. and a humidity of 60% ± 10%, a universal material testing machine (model 5848 manufactured by Instron) is used. The compression amount and load were measured at a compression speed of 0.1 mm / min. It calculated using the slope of the straight line which carried out the primary approximation using the data point of the load 1000gf / cm < 2 > from the data point in the case of the load 300gf / cm < 2 > of the obtained compression load-compression deformation amount diagram.
（圧縮率）
直径７ｍｍの円（厚さ：任意）に切り出した材料（研磨層）を圧縮率測定用試料とし、温度２３℃±２℃、湿度５０％±５％の環境で４０時間静置した。測定には熱分析測定器 ＴＭＡ（ＳＥＩＫＯ ＩＮＳＴＲＵＭＥＮＴＳ製、ＳＳ６０００）を用い、圧縮率を測定した。また、圧縮率の計算式を下記に示す。
(Compression rate)
A material (polishing layer) cut into a circle (thickness: arbitrary) having a diameter of 7 mm was used as a compression rate measurement sample and allowed to stand for 40 hours in an environment of temperature 23 ° C. ± 2 ° C. and humidity 50% ± 5%. For the measurement, a compression ratio was measured using a thermal analysis measuring instrument TMA (manufactured by SEIKO INSTRUMENTS, SS6000). Moreover, the calculation formula of a compression rate is shown below.
［Ｔ１は材料に無負荷状態から３０ＫＰａ（３００ｇ／ｃｍ２）の応力の負荷を６０秒間保持した時の材料厚さであり、Ｔ２はＴ１の状態から１８０ＫＰa （１８００ｇ／ｃｍ２）の応力の負荷を６０秒間保持した時の材料厚さである。］ [T1 is the thickness of the material when a stress load of 30 KPa (300 g / cm 2 ) is maintained for 60 seconds from a no-load state, and T2 is a stress load of 180 KPa (1800 g / cm 2 ) from the T1 state. Is the material thickness when holding for 60 seconds. ]
（曲げ弾性率）
研磨層を厚さ２．０ｍｍ、幅１０ｍｍ、長さ５０ｍｍに切り出して曲げ弾性率測定用試料とし、材料試験機（東洋精機社製、ＴＥＮＳＩＬＯＮ ＵＴＭ‐４ＬＨ）を用いて、支点間距離３２ｍｍ、試験速度２ｍｍ／分で、ＪＩＳ Ｋ７１７１に準拠して３回測定し、その平均値を曲げ弾性率とした。
(Flexural modulus)
The polishing layer was cut to a thickness of 2.0 mm, a width of 10 mm, and a length of 50 mm to obtain a sample for measuring the flexural modulus. Using a material testing machine (TENSILON UTM-4LH, manufactured by Toyo Seiki Co., Ltd.), a distance between fulcrums of 32 mm was tested. Measurement was performed 3 times in accordance with JIS K7171 at a speed of 2 mm / min, and the average value was defined as the flexural modulus.
（平均気泡径測定）
厚さ１ｍｍ程度になるべく薄くミクロトームカッターで平行に切り出した研磨層などの材を平均気泡径測定用試料とした。試料をスライドガラス上に固定し、画像処理装置（東洋紡社製、Ｉｍａｇｅ Ａｎａｌｙｚｅｒ Ｖ１０）を用いて、任意の０．２ｍｍ×０．２ｍｍ範囲の全気泡径を測定し、平均気泡径を算出した。
(Average bubble diameter measurement)
A material such as a polishing layer cut out in parallel with a microtome cutter as thin as possible to a thickness of about 1 mm was used as a sample for measuring the average cell diameter. The sample was fixed on a slide glass, and the total bubble diameter in an arbitrary 0.2 mm × 0.2 mm range was measured using an image processing apparatus (Image Analyzer V10, manufactured by Toyobo Co., Ltd.), and the average bubble diameter was calculated.
（比重測定）
ＪＩＳ Ｚ８８０７‐１９７６に準拠して行った。４ｃｍ×８．５ｃｍの短冊状（厚さ：任意）に切り出した研磨層などの材を比重測定用試料とし、温度２３℃±２℃、湿度５０％±５％の環境で１６時間静置した。測定には比重計（ザルトリウス社製）を用い、比重を測定した。
(Specific gravity measurement)
This was performed according to JIS Z8807-1976. A material such as a polishing layer cut into a 4 cm × 8.5 cm strip (thickness: arbitrary) was used as a sample for measuring specific gravity, and was allowed to stand for 16 hours in an environment of temperature 23 ° C. ± 2 ° C. and humidity 50% ± 5%. . The specific gravity was measured using a hydrometer (manufactured by Sartorius).
（硬度測定）
ＪＩＳ Ｋ６２５３‐１９９７に準拠して行った。２ｃｍ×２ｃｍ（厚さ：任意）の大きさに切り出した研磨層などの材を硬度測定用試料とし、温度２３℃±２℃、湿度５０％±５％の環境で１６時間静置した。測定時には、試料を重ね合わせ、厚さ６ｍｍ以上とした。硬度計（高分子計器社製、アスカーＤ型硬度計）を用い、硬度を測定した。
(Hardness measurement)
This was performed according to JIS K6253-1997. A material such as a polishing layer cut into a size of 2 cm × 2 cm (thickness: arbitrary) was used as a sample for hardness measurement, and was allowed to stand for 16 hours in an environment of a temperature of 23 ° C. ± 2 ° C. and a humidity of 50% ± 5%. At the time of measurement, the samples were overlapped to a thickness of 6 mm or more. The hardness was measured using a hardness meter (manufactured by Kobunshi Keiki Co., Ltd., Asker D type hardness meter).
（研磨特性の評価）
研磨装置としてＳＰＰ６００Ｓ（岡本工作機械社製）を用い、作製した研磨パッドを用いて、研磨特性の評価を行った。
(Evaluation of polishing characteristics)
Using SPP600S (manufactured by Okamoto Machine Tool Co., Ltd.) as a polishing apparatus, polishing characteristics were evaluated using the prepared polishing pad.
研磨レート
研磨レートの評価は、８インチのシリコンウエハに熱酸化膜を１μｍ製膜したものを、約０．５μｍ研磨して、このときの時間から算出した。酸化膜の膜厚測定には、干渉式膜厚測定装置（大塚電子社製）を用いた。研磨条件としては、スラリーとしてシリカスラリー（ＳＳ１２、キャボット社製）を研磨中に流量１５０ミリリットル／分にて添加した。研磨荷重としては３５０ｇ／ｃｍ２、研磨定盤回転数３５ｒｐｍ、ウエハ回転数３０ｒｐｍとした。
Polishing rate The polishing rate was evaluated by polishing about 0.5 μm of a 1-μm thick thermal oxide film formed on an 8-inch silicon wafer and calculating from this time. An interference type film thickness measuring device (manufactured by Otsuka Electronics Co., Ltd.) was used for measuring the thickness of the oxide film. As polishing conditions, silica slurry (SS12, manufactured by Cabot) was added as a slurry at a flow rate of 150 ml / min during polishing. The polishing load was 350 g / cm 2 , the polishing platen rotation number was 35 rpm, and the wafer rotation number was 30 rpm.
面内均一性
面内均一性は、研磨終了後のウエハの任意２５点の膜厚測定値より下記式により算出した。尚、面内均一性の値が小さいほどウエハ表面の面内均一性が高いことを表す。
In-plane uniformity The in- plane uniformity was calculated by the following formula from film thickness measurement values at arbitrary 25 points on the wafer after polishing. The smaller the in-plane uniformity value, the higher the in-plane uniformity of the wafer surface.
平坦化特性
平坦化特性の評価は、８インチシリコンウエハに熱酸化膜を０．５μｍ堆積させた後、所定のパターニングを行い、ｐ−ＴＥＯＳ（テトラエトキシシラン）にて酸化膜を１μｍ堆積させ、初期段差０．５μｍのパターン付きウエハを作製した。このウエハを前述条件にて研磨を行い、研磨後、各段差を測定し平坦化特性を評価した。平坦化特性としては２つの段差を測定した。一つはローカル段差であり、これは幅２７０μｍのラインが３０μｍのスペースで並んだパターンにおける段差であり、１分後の段差を測定した。もう一つは削れ量であり、幅２７０μｍのラインが３０μｍのスペースで並んだパターンと幅３０μｍのラインが２７０μｍのスペースで並んだパターンにおいて、上記２種パターンのライン上部の段差が２０００Å以下になるときの２７０μｍのスペースの削れ量を測定した。ローカル段差の数値が低いとウエハ上のパターン依存により発生した酸化膜の凹凸に対し、ある時間において平坦になる速度が大きいことを示す。また、スペースの削れ量が少ないと削れて欲しくない部分の削れ量が少なく平坦化特性が高いことを示す。
The planarization characteristics are evaluated by depositing a thermal oxide film of 0.5 μm on an 8-inch silicon wafer, performing predetermined patterning, and depositing an oxide film of 1 μm with p-TEOS (tetraethoxysilane). A patterned wafer with an initial step of 0.5 μm was produced. This wafer was polished under the above conditions, and after polishing, each step was measured to evaluate the planarization characteristics. Two steps were measured as the flattening characteristics. One is a local step, which is a step in a pattern in which lines having a width of 270 μm are arranged in a space of 30 μm, and the step after one minute was measured. The other is the amount of shaving, and in the pattern in which lines with a width of 270 μm are arranged in a space of 30 μm and the pattern in which lines with a width of 30 μm are arranged in a space of 270 μm, the step difference at the upper part of the two types of patterns is 2000 mm or less. The amount of scraping of the space of 270 μm was measured. When the numerical value of the local step is low, it indicates that the flattening speed in a certain time is large with respect to the unevenness of the oxide film caused by the pattern dependence on the wafer. Further, when the amount of scraping of the space is small, the amount of shaving of the portion that is not desired to be shaved is small and the flattening characteristics are high.
（実施例１）
熱可塑性ポリウレタンエラストマーＥ５６８（日本ミラクトラン社製、ショアＤ硬度６８）を押し出し機を用いて幅６５０ｍｍ、厚さ１．５ｍｍのシート状に押し出し、長さ６５０ｍｍで裁断し、６５０ｍｍ×６５０ｍｍ×１．５ｍｍのシートを得た。このシートを圧力容器内に入れ、温度４０℃、１５ＭＰａに保たれた二酸化炭素雰囲気下で２４時間放置し、上記シートに二酸化炭素を十分に含浸させた。これを容器から取り出し、８０℃に加温した２枚のテフロン（登録商標）シートに挟み込み、直ちに１４５℃のオイルバス中に入れて４０秒間浸漬処理を行い発泡させた。得られたシート発泡体をバフ機でバフィングして１．３ｍｍ厚さとし研磨層シートを得た。この得られた研磨層シートの比重は０．７６ｇ／ｃｍ３、平均気泡径は１８μｍ、硬度は４７、曲げ弾性率は２５５ＭＰａ、圧縮率は１．３％であった。
Example 1
A thermoplastic polyurethane elastomer E568 (Nippon Miractran, Shore D hardness 68) was extruded into a sheet having a width of 650 mm and a thickness of 1.5 mm using an extruder, cut to a length of 650 mm, and 650 mm × 650 mm × 1.5 mm. Got the sheet. This sheet was placed in a pressure vessel and allowed to stand for 24 hours in a carbon dioxide atmosphere maintained at a temperature of 40 ° C. and 15 MPa, so that the sheet was sufficiently impregnated with carbon dioxide. This was taken out from the container, sandwiched between two Teflon (registered trademark) sheets heated to 80 ° C., immediately put in an oil bath at 145 ° C., and subjected to an immersion treatment for 40 seconds to cause foaming. The obtained sheet foam was buffed with a buffing machine to a thickness of 1.3 mm to obtain a polishing layer sheet. The obtained polishing layer sheet had a specific gravity of 0.76 g / cm 3 , an average cell diameter of 18 μm, a hardness of 47, a flexural modulus of 255 MPa, and a compressibility of 1.3%.
この得られた研磨層シートの片面を、表面溝加工機（東邦エンジニアリング社製）によって、溝深さ０．４ｍｍ、溝幅０．２５ｍｍ、溝ピッチ１．５ｍｍの同心円状溝を形成し、直径２４インチ（６１０ｍｍ）を有する円形に外周を裁断して研磨層を作製した。 A concentric groove having a groove depth of 0.4 mm, a groove width of 0.25 mm, and a groove pitch of 1.5 mm is formed on one side of the obtained polishing layer sheet by a surface groove processing machine (manufactured by Toho Engineering Co., Ltd.). The outer periphery was cut into a circle having 24 inches (610 mm) to produce a polishing layer.
一方、独立気泡発泡体のポリウレタン樹脂からなる厚さ０．８ｍｍ、歪定数０．０７μｍ／（ｇｆ／ｃｍ２）の直径２４インチ（６１０ｍｍ）を有する円形のクッション層を用意し、これと上記研磨層とを両面テープ（積水化学社製、ダブルタックテープ＃５７８２）にて貼り合せ、さらにクッション層の研磨層と反対側面にプラテン用両面テープ（積水化学社製、ダブルタックテープ＃５７８４）を貼り、研磨パッドを作製した。 On the other hand, a circular cushion layer having a thickness of 0.8 mm and a distortion constant of 0.07 μm / (gf / cm 2 ) having a diameter of 24 inches (610 mm) made of a closed cell foam polyurethane resin was prepared, and this was polished. The layers are bonded with a double-sided tape (Sekisui Chemical Co., Ltd., double tack tape # 5782), and a double-sided tape for platen (Sekisui Chemical Co., Ltd., double tack tape # 5784) is attached to the side opposite to the polishing layer of the cushion layer. A polishing pad was prepared.
（比較例１）
フッ素コーティングした反応容器内に、フィルタリングしたポリエーテル系プレポリマー（ユニロイヤル社製、アジプレンＬ‐３２５、ＮＣＯ濃度：２．２２ｍｅｑ／ｇ）１００重量部，及びフィルタリングしたシリコーン系ノニオン界面活性剤（東レ・ダウシリコーン社製、ＳＨ１９２）３重量部を混合し、温度を８０℃に調整した。フッ素コーティングした撹拌翼を用いて、回転数９００ｒｐｍで反応系内に気泡を取り込むように約４分間激しく撹拌を行った。そこへ予め１２０℃で溶融し、フィルタリングした４，４’−メチレンビス（ｏ‐クロロアニリン）（イハラケミカル社製、イハラキュアミンＭＴ）２６重量部を添加した。その後、約１分間撹拌を続けてフッ素コーティングしたパン型のオープンモールドへ反応溶液を流し込んだ。この反応溶液の流動性がなくなった時点でオーブン内に入れ、１１０℃で６時間ポストキュアを行いポリウレタン樹脂発泡体ブロックを得た。このポリウレタン樹脂発泡体ブロックをバンドソータイプのスライサー（フェッケン社製）を用いてスライスし、ポリウレタン樹脂発泡体シートを得た。次にこのシートをバフ機（アミテック社製）を使用して、所定の厚さに表面バフを行い、厚さ精度を整えたシートとした（シート厚さ：１．２７ｍｍ）。このバフ処理をしたシートを所定の直径２４インチ（６１０ｍｍ）を有する円形に打ち抜き、溝加工機（東邦鋼機社製）を用いて表面に溝幅０．２５ｍｍ、溝ピッチ１．５０ｍｍ、溝深さ０．４０ｍｍの同心円状の溝加工を行い研磨層を作製した。作製した研磨層の各物性は、平均気泡径４５μｍ、比重０．８７ｇ／ｃｍ３、硬度５３度、圧縮率１．０％、曲げ弾性率２６０ＭＰａであった。
(Comparative Example 1)
In a fluorine-coated reaction vessel, 100 parts by weight of a filtered polyether-based prepolymer (Uniroy, Adiprene L-325, NCO concentration: 2.22 meq / g) and a filtered silicone-based nonionic surfactant (Toray Industries, Inc.) -3 parts by weight of Dow Silicone, SH192) was mixed, and the temperature was adjusted to 80 ° C. Using a fluorine-coated stirring blade, the mixture was vigorously stirred for about 4 minutes so that air bubbles were taken into the reaction system at a rotation speed of 900 rpm. Thereto was added 26 parts by weight of 4,4′-methylenebis (o-chloroaniline) (Ihara Chemical amine, manufactured by Ihara Chemical Co., Ltd.) previously melted at 120 ° C. and filtered. Thereafter, stirring was continued for about 1 minute, and the reaction solution was poured into a pan-type open mold coated with fluorine. When the reaction solution lost its fluidity, it was put in an oven and post-cured at 110 ° C. for 6 hours to obtain a polyurethane resin foam block. This polyurethane resin foam block was sliced using a band saw type slicer (manufactured by Fecken) to obtain a polyurethane resin foam sheet. Next, this sheet was subjected to surface buffing to a predetermined thickness using a buffing machine (manufactured by Amitech Co., Ltd.) to obtain a sheet with adjusted thickness accuracy (sheet thickness: 1.27 mm). The buffed sheet is punched into a circular shape having a predetermined diameter of 24 inches (610 mm), and a groove width (0.25 mm, groove pitch 1.50 mm, groove depth) is formed on the surface using a groove processing machine (manufactured by Toho Koki Co., Ltd.). A concentric groove having a thickness of 0.40 mm was processed to prepare a polishing layer. The physical properties of the produced polishing layer were an average bubble diameter of 45 μm, a specific gravity of 0.87 g / cm 3 , a hardness of 53 degrees, a compressibility of 1.0%, and a flexural modulus of 260 MPa.
一方、独立気泡発泡体のポリエチレン樹脂からなる厚さ１．３ｍｍ、歪定数０．１４μｍ／（ｇｆ／ｃｍ２）の直径２４インチ（６１０ｍｍ）を有する円形であるクッション層を用意し、これと上記研磨層とを両面テープ（積水化学社製、ダブルタックテープ＃５７８２）にて貼り合せ、さらにクッション層の研磨層と反対側面にプラテン用両面テープ（積水化学社製、ダブルタックテープ＃５７８４）を貼り、研磨パッドを作製した。 On the other hand, a cushion layer which is a circular layer having a thickness of 1.3 mm made of polyethylene of closed cell foam and a diameter of 24 inches (610 mm) having a strain constant of 0.14 μm / (gf / cm 2 ) is prepared. The polishing layer is bonded with a double-sided tape (Sekisui Chemical Co., Ltd., double tack tape # 5782), and a double-sided tape for platen (Sekisui Chemical Co., Ltd., double tack tape # 5784) is attached to the opposite side of the cushion layer polishing layer. Affixed and a polishing pad was produced.
（比較例２）
クッション層として、独立気泡発泡体のポリエチレン樹脂からなる厚さ０．４ｍｍ、歪定数０．１３μｍ／（ｇｆ／ｃｍ２）の直径２４インチ（６１０ｍｍ）を有する円形シートを用意し、これと実施例１で用いた研磨層とを、比較例１と同様に積層して研磨パッドを作製した。
(Comparative Example 2)
As a cushion layer, a circular sheet having a diameter of 24 inches (610 mm) having a thickness of 0.4 mm and a strain constant of 0.13 μm / (gf / cm 2 ) made of polyethylene resin of closed cell foam is prepared. A polishing pad was prepared by laminating the polishing layer used in 1 in the same manner as in Comparative Example 1.
（比較例３）
シリコーン系ノニオン界面活性剤を２０重量部に変更した以外は、比較例１と同様にして研磨層を作製した。得られた研磨層の各物性は、平均気泡径２５μｍ、比重０．７ｇ／ｃｍ３、硬度４０、圧縮率２．０％、曲げ弾性率１７０ＭＰａであった。
(Comparative Example 3)
A polishing layer was produced in the same manner as in Comparative Example 1 except that the silicone-based nonionic surfactant was changed to 20 parts by weight. The physical properties of the obtained polishing layer were an average cell diameter of 25 μm, a specific gravity of 0.7 g / cm 3 , a hardness of 40, a compressibility of 2.0%, and a flexural modulus of 170 MPa.
この研磨層に、実施例１で用いたクッション層を、実施例１と同様に積層して研磨パッドを作製した。 On this polishing layer, the cushion layer used in Example 1 was laminated in the same manner as in Example 1 to produce a polishing pad.
実施例１および比較例１〜３の研磨パッドの研磨特性の評価を行った、その測定結果を下記表１に示す。実施例１の研磨パッドは、研磨レート、面内均一性、平坦化特性が全て満足し得るものであった。 Table 1 below shows the measurement results obtained by evaluating the polishing characteristics of the polishing pads of Example 1 and Comparative Examples 1 to 3. The polishing pad of Example 1 was satisfactory in all of the polishing rate, in-plane uniformity, and planarization characteristics.
これに対して、比較例１の研磨パッドは、研磨レートおよび面内均一性においては実施例の研磨パッドには劣るものの満足し得る範囲であったが、平坦化特性においては到底満足し得るものではなかった。比較例２の研磨パッドは、研磨レートおよび平坦化特性においては実施例の研磨パッドには劣るものの満足し得る範囲であったが、面内均一性が著しく悪化した。比較例３の研磨パッドは、面内均一性が非常に良好であったものの、研磨レートおよび平坦化特性が極めて悪化した。 On the other hand, the polishing pad of Comparative Example 1 was satisfactory in the polishing rate and in-plane uniformity although it was inferior to the polishing pad of the example, but the planarization characteristics were satisfactory. It wasn't. The polishing pad of Comparative Example 2 was in a satisfactory range in terms of polishing rate and planarization characteristics, although it was inferior to the polishing pad of the example, but the in-plane uniformity was significantly deteriorated. The polishing pad of Comparative Example 3 had very good in-plane uniformity, but the polishing rate and planarization characteristics were extremely deteriorated.
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| JP2004046411A JP3754436B2 (en) | 2004-02-23 | 2004-02-23 | Polishing pad and semiconductor device manufacturing method using the same |
| TW094105256A TW200534357A (en) | 2004-02-23 | 2005-02-22 | Polishing pad and method for manufacture of semiconductor device using the same |
| KR1020067019680A KR101107842B1 (en) | 2004-02-23 | 2005-02-22 | Polishing pad and method for manufacture of semiconductor device using the same |
| US10/590,067 US7470170B2 (en) | 2004-02-23 | 2005-02-22 | Polishing pad and method for manufacture of semiconductor device using the same |
| CNB2005800124200A CN100461346C (en) | 2004-02-23 | 2005-02-22 | Polishing pad and method for manufacture of semiconductor device using the same |
| PCT/JP2005/002785 WO2005081300A1 (en) | 2004-02-23 | 2005-02-22 | Polishing pad and method for manufacture of semiconductor device using the same |
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| KR102173453B1 (en) * | 2019-03-29 | 2020-11-03 | 노백남 | A cleaning pad for polishing of display and manufacturing method thereof |
| KR102198769B1 (en) | 2020-03-17 | 2021-01-05 | 에스케이씨 주식회사 | Polishing pad and preparation method of semiconductor device using same |
| JP7105334B2 (en) | 2020-03-17 | 2022-07-22 | エスケーシー ソルミックス カンパニー，リミテッド | Polishing pad and method for manufacturing semiconductor device using the same |
| KR102206485B1 (en) | 2020-03-17 | 2021-01-22 | 에스케이씨 주식회사 | Polishing pad and preparation method of semiconductor device using same |
| TW202239829A (en) * | 2020-12-25 | 2022-10-16 | 日商富士紡控股股份有限公司 | Polishing pad, method for producing polishing pad and method for producing polished article, and wrapping pad, method for producing wrapping pad and method for producing wrapped article |
| US20230390970A1 (en) * | 2022-06-02 | 2023-12-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of making low specific gravity polishing pads |
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| JP3442772B2 (en) * | 1990-03-22 | 2003-09-02 | ウェステック システムズ インコーポレイテッド | Apparatus for planarization of intermediate layers of semiconductor materials |
| US5257478A (en) | 1990-03-22 | 1993-11-02 | Rodel, Inc. | Apparatus for interlayer planarization of semiconductor material |
| JP2900777B2 (en) | 1993-12-14 | 1999-06-02 | 信越半導体株式会社 | Polishing member and wafer polishing apparatus |
| US5564965A (en) | 1993-12-14 | 1996-10-15 | Shin-Etsu Handotai Co., Ltd. | Polishing member and wafer polishing apparatus |
| US6428388B2 (en) * | 1998-11-06 | 2002-08-06 | Beaver Creek Concepts Inc. | Finishing element with finishing aids |
| JP4296655B2 (en) * | 1999-10-12 | 2009-07-15 | 東レ株式会社 | Polishing pad for semiconductor substrate |
| JP2002059357A (en) | 2000-08-23 | 2002-02-26 | Toray Ind Inc | Polishing pad, polishing device and polishing method |
| CN1224499C (en) | 2000-12-01 | 2005-10-26 | 东洋橡膠工业株式会社 | Polishing pad, method of mfg. polishing pad, and cushion layer polishing pad |
| JP2003305635A (en) | 2000-12-01 | 2003-10-28 | Toyobo Co Ltd | Cushion layer for polishing pad and polishing pad using it |
| JP2003124161A (en) * | 2001-10-09 | 2003-04-25 | Toray Ind Inc | Polishing pad, polishing device and polishing method using them |
| US7651761B2 (en) | 2001-11-13 | 2010-01-26 | Toyo Tire & Rubber Co., Ltd. | Grinding pad and method of producing the same |
| JP3455208B2 (en) | 2001-11-13 | 2003-10-14 | 東洋紡績株式会社 | Semiconductor wafer polishing pad, method for polishing semiconductor wafer, polishing sheet for polishing pad, and foam block for polishing sheet |
| JP3570681B2 (en) * | 2001-12-10 | 2004-09-29 | 東洋ゴム工業株式会社 | Polishing pad |
| US6913517B2 (en) * | 2002-05-23 | 2005-07-05 | Cabot Microelectronics Corporation | Microporous polishing pads |
| US7267607B2 (en) * | 2002-10-28 | 2007-09-11 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
| US6998166B2 (en) * | 2003-06-17 | 2006-02-14 | Cabot Microelectronics Corporation | Polishing pad with oriented pore structure |
| US20050032464A1 (en) * | 2003-08-07 | 2005-02-10 | Swisher Robert G. | Polishing pad having edge surface treatment |
| US8075372B2 (en) * | 2004-09-01 | 2011-12-13 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
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2004
- 2004-02-23 JP JP2004046411A patent/JP3754436B2/en not_active Expired - Lifetime
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- 2005-02-22 TW TW094105256A patent/TW200534357A/en unknown
- 2005-02-22 KR KR1020067019680A patent/KR101107842B1/en active IP Right Grant
- 2005-02-22 US US10/590,067 patent/US7470170B2/en active Active
- 2005-02-22 CN CNB2005800124200A patent/CN100461346C/en active Active
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017001765A1 (en) | 2016-02-29 | 2017-09-14 | Fanuc Corporation | NUMERICAL CONTROL FOR TOOL MACHINE |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI358081B (en) | 2012-02-11 |
| US7470170B2 (en) | 2008-12-30 |
| CN1950930A (en) | 2007-04-18 |
| KR101107842B1 (en) | 2012-01-31 |
| TW200534357A (en) | 2005-10-16 |
| KR20070019709A (en) | 2007-02-15 |
| JP2005236200A (en) | 2005-09-02 |
| CN100461346C (en) | 2009-02-11 |
| WO2005081300A1 (en) | 2005-09-01 |
| US20070178812A1 (en) | 2007-08-02 |
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