JP3556474B2 - Mounting structure of high-frequency element mounting board and high-frequency module structure - Google Patents

Mounting structure of high-frequency element mounting board and high-frequency module structure Download PDF

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JP3556474B2
JP3556474B2 JP18394698A JP18394698A JP3556474B2 JP 3556474 B2 JP3556474 B2 JP 3556474B2 JP 18394698 A JP18394698 A JP 18394698A JP 18394698 A JP18394698 A JP 18394698A JP 3556474 B2 JP3556474 B2 JP 3556474B2
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frequency
substrate
line
frequency element
dielectric substrate
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JP2000022043A (en
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義信 澤
謙治 北澤
慎一 郡山
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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Description

【０００１】
【発明の属する技術分野】
本発明は、マイクロ波帯からミリ波帯領域の高周波素子を搭載した高周波素子搭載基板を所定の外部基板に実装してなる構造、および複数の高周波素子搭載基板を所定の外部基板に配列実装してなる高周波用モジュール構造に関し、高周波信号の特性劣化を低減して外部基板に接続するための改良に関するものである。
【０００２】
【従来技術】
従来、マイクロ波やミリ波の信号を取り扱う高周波用パッケージ３０は、図６（ａ）に示すように、誘電体基板３１と、枠体３２および蓋体３３により形成されるキャビティ３４内に高周波素子３５が搭載されて気密に封止され、高周波信号の入出力及び他の高周波用パッケージとの接続は、誘電体基板３１の表面に形成され、一端が高周波素子３５と接続されたマイクロストリップ線路等の高周波用線路３６を枠体３２を通してキャビティ３４外に引き出し、これを誘電体基板３１の側面を経由して裏面に引回して形成し、パッケージ３０の裏面の高周波用線路３６と外部回路基板３７の高周波用線路３８とを半田等の接着材を介して接続していた。また、モジュール化する場合も、外部回路基板３７の高周波用線路３８を経由して他の高周波用パッケージ３０’と相互接続していた。
【０００３】
また、他の高周波用パッケージ４０は、図６（ｂ）に示すように、キャビティ３４内の誘電体基板３１の表面に、一端が高周波素子３５と接続された高周波用線路４１を形成し、また誘電体基板３１の裏面に高周波用線路４２を形成し、高周波用線路４１と４２とをスルーホール導体４３を介して接続していた。そして、この高周波用パッケージ４０も図４（ａ）の高周波用パッケージ３０と同様に、外部回路基板３７の高周波用線路３８とを半田等の接着材３９を介して接続され、またこの高周波用線路３８を介して他の高周波用パッケージ４０’と相互接続していた。
【０００４】
【発明が解決しようとする課題】
しかしながら、図６（ａ）において、高周波用線路３６が枠体３２内を通過する場合、通過部で線路がマイクロストリップ線路からストリップ線路へと変換されるため、信号線路幅を狭くする必要があり、その結果、通過部で反射損、放射損が発生しやすいため高周波信号の特性劣化が起こりやすくなるという問題があった。また、高周波用線路３６が誘電体基板３１の側面で曲折することから、ミリ波帯で用いた場合、伝送線路が曲折することにより反射が大きくなり信号を送受することが困難となる場合があった。
【０００５】
これに対して、図６（ｂ）は、スルーホール導体４３によって接続されるために図６（ａ）のような枠体３２通過部での反射損や放射損は低減されるが、信号周波数が４０ＧＨｚ以上になるとスルーホール導体４３での透過損失が急激に大きくなるために、マイクロ波帯からミリ波帯領域の信号を特性劣化なく伝送することが困難であった。
【０００６】
また、図６（ａ）（ｂ）のように、高周波用パッケージの外部回路基板３７への実装を、パッケージの底面に形成された高周波用線路３６、４２と高周波用線路３８とを半田等の接着材３９によって行うと、パッケージ側の高周波用線路と、外部回路基板側の高周波用線路とのパターンとのアライメントが難しく、信号の周波数によっては半田実装部でインピーダンス不整合によって反射損が生じ伝送損失が大きくなり、伝送自体が困難となる場合もあった。
【０００７】
従って、本発明は、高周波素子を搭載する基板を気密に封止するとともに、外部基板への実装においてアライメントが容易に行うことができ、高周波信号の伝送損失を低減した高周波素子搭載基板の実装構造を提供することを目的とするものである。
【０００８】
また、本発明は、高周波素子を搭載する基板を気密に封止するとともに、外部基板への実装と同時に他の高周波素子搭載基板の接続を容易にし、且つ高周波信号の伝送損失を低減したモジュール構造を提供することを目的とするものである。
【０００９】
【課題を解決するための手段】
本発明者らは、上記の目的に対して検討を重ねた結果、高周波素子と接続された高周波用線路と、他の回路との接続を担う高周波用線路とを電磁的に結合すること、そして、高周波素子の気密封止を外部基板への実装によって行うことによって他の回路との接続用の高周波用線路を上面側に設けることにより、接続用の高周波用線路と、他の回路との接続を容易ならしめることができることを見いだし、本発明に至った。
【００１０】
即ち、本発明の高周波素子搭載基板は、誘電体基板と、該誘電体基板の一方の表面に搭載された高周波素子と、前記誘電体基板の一方の表面に被着形成され一端が前記高周波素子と接続された第１の高周波用線路と、前記高周波素子および前記第１の高周波用線路の周囲に設けられた枠体と、前記誘電体基板の他方の表面に形成された第２の高周波用線路とを具備し、前記第１の高周波用線路と前記第２の高周波用線路とを電磁的に結合してなるものであって、かかる高周波素子搭載基板を、接続端子を具備する外部基板に実装するにあたり、前記高周波素子搭載基板の前記枠体を前記外部基板と接合することにより前記高周波素子を誘電体基板、枠体および外部基板によって形成されるキャビティ内に気密に封止するとともに、前記高周波素子搭載基板の前記第２の高周波用線路と前記接続端子とを接続してなることを特徴とするものである。
【００１１】
また、複数の高周波素子搭載基板を相互接続してモジュール化するにあたり、前記高周波素子搭載基板における前記枠体をそれぞれ前記外部基板と接合することにより前記高周波素子を誘電体基板、枠体および外部基板によって形成されるキャビティ内に気密に封止するとともに、前記複数の高周波素子搭載基板の各第２の高周波用線路同士を相互接続してなることを特徴とするものである。
【００１２】
なお、上記実装構造およびモジュール構造において、前記高周波素子搭載基板における前記誘電体基板内部にグランド層が形成され、前記第１の高周波用線路と前記第２の高周波用線路とが、前記グランド層内に形成されたスロット孔を介して電磁的に結合してなることが望ましい。
【００１３】
また、前記実装構造における第２の高周波用線路と接続端子との接続、前記第２の高周波用線路同士の接続を、ワイヤボンディング、リボン、金属層付きテープのうちのいずれかによって接続することが望ましい。
【００１４】
【作用】
本発明によれば、高周波素子搭載基板において、高周波素子と接続された高周波用線路と、他の回路との接続を担う高周波用線路とを電磁的に結合することによって、従来の図６（ａ）（ｂ）に示したような高周波線路の引回しやスルーホール導体による接続に比較して反射損や透過損などによる伝送特性の劣化を大幅に低減することができる。
【００１５】
また、外部基板への実装にあたり、高周波素子搭載基板の高周波素子搭載面側に枠体を形成し、この枠体を外部基板と接合することにより高周波素子を誘電体基板、枠体および外部基板によって形成されるキャビティ内に気密に封止することができる。
【００１６】
しかも、外部基板への実装面を高周波素子搭載面側とすることにより、接続用の高周波用線路が上面に配置されるために、この接続用の高周波用線路と外部基板の接続端子や、モジュール構造においては、他の高周波素子搭載基板の接続用高周波用線路とを、リボン、ワイヤ、又はＴＡＢ（Ｔａｐｅ Ａｕｔｏｍａｔｅｄ Ｂｏｎｄｉｎｇ）テープなどの金属層付きテープなどで接続することができ、これによりアライメントを容易に行うことができるとともに、接続時の伝送損失をも低減できる。
【００１７】
【発明の実施の形態】
本発明における高周波素子搭載基板の実装構造の一例を示す図１乃至図２をもとに説明する。図１は、本発明の実装構造の概略断面図、図２は、その平面図である。図１および図２によれば、高周波素子搭載基板Ａは、誘電体材料からなる誘電体基板１の表面にＭＭＩＣ，ＭＩＣなどの高周波素子２が搭載されている。また、誘電体基板１の表面には、高周波素子２に対して信号の入出力を担う一対の第１の高周波用線路３が被着形成されている。
【００１８】
また、図１の高周波素子搭載基板Ａにおいては、誘電体基板１の内部には、グランド層４がほぼ全面にわたり形成されており、前記第１の高周波用線路３は、グランド層４とともにマイクロストリップ線路を形成している。なお、第１の高周波用線路の一端は、ワイヤボンディング、リボン、ＴＡＢ（Ｔａｐｅ Ａｕｔｏｍａｔｅｄ Ｂｏｎｄｉｎｇ）用テープなどの金属層付きテープ（以下、単にＴＡＢ用テープという。）やフリップチップ実装等によって高周波素子２と電気的に接続されている。
【００１９】
さらに、誘電体基板１の高周波素子２および第１の高周波用線路３の周囲には、所定の高さを有する枠体５が設けられている。この枠体５は、後述する外部基板への実装時に高周波素子２を気密に封止するためのキャビティを形成する部材である。この枠体５は、キャビティからの電磁波が外部に漏洩するのを防止できる材料から構成されることが望ましく、金属、セラミックス、セラミックス金属複合材料、ガラスセラミックス等が使用できるが、これらの材料中に電磁波を吸収させることのできるカーボン等の電磁波吸収物質を分散させたり、表面にこれらの電磁波吸収物質を塗布することもできる。特に枠体５は、金属からなることが最も望ましい。その場合、金属製枠体は、誘電体基板１の表面にロウ材６等によって接合されている。
【００２０】
また、誘電体基板１の高周波素子２搭載面の反対側の表面には、一対の第２の高周波用線路７が被着形成されており、グランド層４とともにマイクロストリップ線路を形成している。
【００２１】
さらに、グランド層４内には、導体層が形成されないスロット孔８が形成されている。このスロット孔８は、いずれも長辺Ｌ、短辺Ｍの略長方形、または長径Ｌ、短径Ｍの楕円径からなり、スロット孔８を介して第１の高周波用線路３と第２の高周波用線路７の各終端部を対照的に対峙する位置に形成することによって線路３と線路７とを電磁的に結合することができる。
【００２２】
第１の高周波用線路３と第２の高周波用線路７とのスロット孔８による電磁結合構造は、図３に示すように、スロット孔８の長辺長さＬは、信号の伝送効率を上げる点で伝送信号の波長λの１／２相当の長さにするのが望ましく、スロット孔８の短辺の長さＭは伝送信号の波長λの１／５相当の長さから１／５０相当の長さに設定するのが望ましい。
【００２３】
そして、第１の高周波用線路３および第２の高周波用線路７の終端部を、スロット孔８に対して、平面的にみてスロット孔８の中心から、互いに長さＸの分だけ突き出るように配設される。この突き出し長さＸは伝送信号の波長λの約１／４相当の長さが望ましい。
【００２４】
本発明における高周波素子搭載基板Ａにおける誘電体基板１の底面において、第２の高周波用線路７端部には、図２に示すようにその両側にグランド層９が形成されたグランド付きコプレーナ線路からなる接続部が形成されている。この接続部は、基板Ａと外部基板の回路と接続するためのものである。なお、グランド層９は、誘電体基板１内のグランド層４とビアホール導体１０あるいは誘電体基板１の側面に形成したキャスタレーション（図示せず）によって電気的に接続され、グランド層４と同電位に保たれている。
【００２５】
本発明の実装構造によれば、図１及び図２に示すように、外部基板Ｂに対して上記高周波素子搭載基板Ａの枠体５を外部基板Ｂの実装部に、半田もしくはＡｕＳｎ等の接着剤１１を用いて接合することにより高周波素子２を誘電体基板１、枠体５および外部基板Ｂによって形成されるキャビティ１２内に気密に封止される。
【００２６】
かかる封止構造によれば、キャビティ１２内は、電磁的にも封止された構造からなることが望ましく、そのために、外部基板Ｂにおける高周波素子搭載基板Ａ実装部におけるキャビティ１２形成部は、枠体５と同様に、電磁波が外部に漏洩するのを防止できる、金属、セラミックス、セラミックス金属複合材料、ガラスセラミックス等の材料から構成されることが望ましく、また、電磁波吸収物質をキャビティ１２形成面の内壁に塗布することもできる。
【００２７】
また、外部基板Ｂの高周波素子搭載基板Ａにおける接続部と対向する箇所には、第３の高周波用線路１３と、一対のグランド層１４とからなる接続端子１５が設けられており、高周波素子搭載基板Ａの第２の高周波用線路７と接続端子１５の第３の高周波用線路１３と、また一対のグランド層９と一対のグランド層１４とが、それぞれリボン、ワイヤ、ＴＡＢ用テープ等の金属層付きテープ等の接続部材１６によってそれぞれ電気的に接続されている。
【００２８】
このように、本発明によれば、外部基板への実装によって、高周波素子２を気密に封止する構造となし、且つ高周波素子搭載基板Ａと、外部基板Ｂとの接続を半田等の接着材を用いることなく、リボン、ワイヤ、ＴＡＢ用テープ等の接続部材１６によって接続することにより、両接続部間のアライメントを容易にならしめるとともに、半田などによる実装に比較して接続部における信号の反射損を低減することができる。
【００２９】
次に、本発明の高周波用モジュール構造について図４の概略断面図および図５の平面図をもとに説明する。本発明によれば、高周波モジュール構造は、基本的に、前記図１乃至図３に示したような構造からなる２個以上の複数の高周波素子搭載基板Ａをそれぞれ外部基板の表面に実装配列し、それらを相互接続してなるものである。
【００３０】
図４および図５に示されるように、２つの高周波素子搭載基板Ａ，Ａ’は、外部基板Ｂにおける第２の高周波用線路７，７’の接続部が互いに近接する位置に、図１および図２にて説明したように２つの基板Ａ、Ａ’がそれぞれの枠体５、５’を外部基板Ｂと半田もしくはＡｕＳｎ等の接着材１１、１１’によって接合されており、それぞれの高周波素子２、２’は、各誘電体基板１、１’、枠体５，５’および外部基板Ｂによって形成されるキャビティ１２，１２’内にそれぞれ気密に封止されている。
【００３１】
そして、上記２つの高周波素子搭載基板Ａ，Ａ’は、その各第２の高周波用線路７、７’同士、および一対のグランド層９、９’同士をそれぞれリボン、ワイヤ、ＴＡＢ用テープ等の接続部材１６によってそれぞれ電気的に接続されている。
【００３２】
かかるモジュール構造においても、各高周波素子搭載基板Ａ、Ａ’同士は、外部基板に対する実装によって、それぞれ高周波素子２を気密に封止する構造となし、且つ２つの高周波素子搭載基板Ａ、Ａ’との接続を半田等の接着材を用いることなく、リボン、ワイヤ、ＴＡＢ用テープ等によって接続することにより、両接続部間のアライメントを容易にならしめるとともに、半田などによる実装に比較して接続部における信号の反射損を低減することができる。
【００３３】
なお、上記の高周波素子搭載基板Ａにおいては、入力用および出力用の１対の高周波用線路が形成された場合について説明したが、基板Ａ内においては、高周波用線路は、３つ以上の高周波用線路が形成され、さらに３つ以上の電磁結合部が存在していてもよい。
【００３４】
また、上記高周波素子搭載基板Ａにおいては、信号伝送用の線路のみについて説明したが、この基板Ａには、信号伝送用の線路のみならず、他の目的の線路あるいは高周波素子２に対する電源供給用等の低周波用配線層が形成されていてもよい。その場合、電源供給用配線層も誘電体基板１の第２の高周波用線路７形成面に引き回され、第２の高周波用線路７の接続部の接続形態と同様に、外部基板Ｂの電源回路とリボン、ワイヤ、ＴＡＢ用テープ等によって接続すればよい。
【００３５】
さらに、高周波素子搭載基板Ａにおける第１の高周波用線路、第２の高周波用線路として、マイクロストリップ線路を例にして説明したが、かかる線路は、ストリップ線路、グランド付コプレーナ線路によって構成されていてもよい。
【００３６】
さらに、本発明の実装構造およびモジュール構造においては、外部基板Ｂは、プリント基板などからなるマザーボード、ハウジング、ヒートシンク等の機能を兼ね備えていてもよい。
【００３７】
【発明の効果】
以上詳述した通り、本発明の高周波素子搭載基板の実装構造およびモジュール構造においては、高周波素子搭載基板における信号伝送線路間を電磁結合させ、しかも高周波素子の気密封止を外部回路基板への枠体の接合によって行い、外部基板との接続部をワイヤ、リボン、ＴＡＢ用テープなどによって接続することにより、アライメントを容易に行うことができるとともに従来の半田などによる実装での特性劣化を低減しながら高周波素子に入出力することが可能な高信頼性で実装およびモジュール化が容易な実装構造およびモジュール構造を提供できる。
【図面の簡単な説明】
【図１】本発明の高周波素子搭載基板の実装構造の概略断面図である。
【図２】図１の実装構造の平面図である。
【図３】本発明における高周波素子搭載基板の電磁結合部の構造を説明するための平面図（ａ）および断面図（ｂ）である。
【図４】本発明の高周波素子搭載基板のモジュール構造の概略断面図である。
【図５】図４のモジュール構造の平面図である。
【図６】従来の高周波用パッケージの実装構造を説明するための概略断面図である。
【符号の説明】
Ａ 高周波素子搭載基板
Ｂ 外部基板
１ 誘電体基板
２ 高周波素子
３ 第１の高周波用線路
４ グランド層
５ 枠体
７ 第２の高周波用線路
８ スロット孔
１２ キャビティ
１３ 接続端子
１６ 接続部材[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention has a structure in which a high-frequency element mounting board on which a high-frequency element in a microwave band to a millimeter wave band is mounted is mounted on a predetermined external board, and a plurality of high-frequency element mounting boards are arranged and mounted on the predetermined external board. TECHNICAL FIELD The present invention relates to an improved high-frequency module structure for reducing deterioration of characteristics of a high-frequency signal and connecting to an external substrate.
[0002]
[Prior art]
Conventionally, as shown in FIG. 6A, a high-frequency package 30 for handling microwave or millimeter-wave signals has a high-frequency element in a cavity 34 formed by a dielectric substrate 31, a frame 32 and a lid 33. The input / output of high-frequency signals and the connection with other high-frequency packages are formed on the surface of the dielectric substrate 31 and one end is connected to the high-frequency element 35. The high-frequency line 36 of the package 30 is drawn out of the cavity 34 through the frame 32 and is routed to the back surface via the side surface of the dielectric substrate 31 to form the high-frequency line 36 on the back surface of the package 30 and the external circuit board 37. Is connected to the high-frequency line 38 via an adhesive such as solder. Also, in the case of modularization, it is interconnected with another high-frequency package 30 'via the high-frequency line 38 of the external circuit board 37.
[0003]
As shown in FIG. 6B, another high-frequency package 40 has a high-frequency line 41 having one end connected to the high-frequency element 35 on the surface of the dielectric substrate 31 in the cavity 34. A high-frequency line 42 is formed on the back surface of the dielectric substrate 31, and the high-frequency lines 41 and 42 are connected via a through-hole conductor 43. The high-frequency package 40 is also connected to the high-frequency line 38 of the external circuit board 37 via an adhesive 39 such as solder, similarly to the high-frequency package 30 in FIG. It was interconnected with another high-frequency package 40 ′ through 38.
[0004]
[Problems to be solved by the invention]
However, in FIG. 6A, when the high-frequency line 36 passes through the inside of the frame 32, the line is converted from a microstrip line to a strip line at the passing portion, so that the signal line width needs to be reduced. As a result, there is a problem that the reflection loss and the radiation loss are apt to occur in the passing portion, so that the characteristics of the high-frequency signal are likely to deteriorate. Further, since the high-frequency line 36 is bent on the side surface of the dielectric substrate 31, when used in the millimeter wave band, the transmission line is bent, so that reflection becomes large and it may be difficult to transmit and receive signals. Was.
[0005]
On the other hand, in FIG. 6B, reflection loss and radiation loss at the passage portion of the frame 32 as shown in FIG. When the frequency exceeds 40 GHz, the transmission loss in the through-hole conductor 43 rapidly increases, so that it has been difficult to transmit a signal in a microwave band to a millimeter wave band without characteristic deterioration.
[0006]
Also, as shown in FIGS. 6A and 6B, the high-frequency package is mounted on the external circuit board 37 by connecting the high-frequency lines 36 and 42 and the high-frequency line 38 formed on the bottom surface of the package with solder or the like. When using the adhesive 39, it is difficult to align the pattern of the high-frequency line on the package side with the pattern of the high-frequency line on the external circuit board side, and depending on the frequency of the signal, reflection loss occurs due to impedance mismatch in the solder mounting portion and transmission. In some cases, the loss becomes large and the transmission itself becomes difficult.
[0007]
Therefore, the present invention provides a mounting structure of a high-frequency element mounting substrate that hermetically seals a substrate on which a high-frequency element is mounted, and that can easily perform alignment when mounted on an external substrate and reduces transmission loss of high-frequency signals. The purpose is to provide.
[0008]
Further, the present invention provides a module structure that hermetically seals a substrate on which a high-frequency element is mounted, facilitates connection to another high-frequency element mounting substrate simultaneously with mounting on an external substrate, and reduces transmission loss of a high-frequency signal. The purpose is to provide.
[0009]
[Means for Solving the Problems]
The present inventors have repeatedly studied the above object, as a result of electromagnetically coupling a high-frequency line connected to a high-frequency element and a high-frequency line serving to connect to other circuits, and The high-frequency element is hermetically sealed by mounting on an external substrate, and the high-frequency line for connection with another circuit is provided on the upper surface side, thereby connecting the high-frequency line for connection with another circuit. Have been found to be easy, and have led to the present invention.
[0010]
That is, the high-frequency element mounting substrate of the present invention is a dielectric substrate, a high-frequency element mounted on one surface of the dielectric substrate, and one end of the high-frequency element adhered to one surface of the dielectric substrate. A first high-frequency line connected to the first high-frequency line, a frame provided around the high-frequency element and the first high-frequency line, and a second high-frequency line formed on the other surface of the dielectric substrate. A line, and the first high-frequency line and the second high-frequency line are electromagnetically coupled to each other, and the high-frequency element mounting substrate is mounted on an external substrate having connection terminals. Upon mounting, the high-frequency element is hermetically sealed in a cavity formed by the dielectric substrate, the frame, and the external substrate by joining the frame of the high-frequency element mounting substrate to the external substrate, high frequency And it is characterized in that formed by connecting the connection terminal and the second high-frequency line child mounting substrate.
[0011]
Further, when interconnecting a plurality of high-frequency element mounting boards to form a module, the frame in the high-frequency element mounting board is bonded to the external substrate, respectively, thereby connecting the high-frequency element to a dielectric substrate, a frame, and an external substrate. And the second high-frequency lines of the plurality of high-frequency element mounting substrates are interconnected with each other.
[0012]
In the mounting structure and the module structure, a ground layer is formed inside the dielectric substrate in the high-frequency element mounting board, and the first high-frequency line and the second high-frequency line are formed in the ground layer. It is desirable to be electromagnetically coupled via a slot hole formed in the hole.
[0013]
The connection between the second high-frequency line and the connection terminal and the connection between the second high-frequency lines in the mounting structure may be connected by any one of wire bonding, a ribbon, and a tape with a metal layer. desirable.
[0014]
[Action]
According to the present invention, in the high-frequency element mounting board, the high-frequency line connected to the high-frequency element is electromagnetically coupled to the high-frequency line for connection to another circuit, thereby achieving the conventional structure shown in FIG. 2) It is possible to significantly reduce deterioration of transmission characteristics due to reflection loss, transmission loss, and the like, as compared with routing of a high-frequency line and connection using a through-hole conductor as shown in FIG.
[0015]
In mounting on an external substrate, a frame is formed on the high-frequency element mounting surface side of the high-frequency element mounting board, and the high-frequency element is bonded to the external board by the dielectric board, the frame, and the external board. It can be hermetically sealed in the cavity formed.
[0016]
In addition, since the high-frequency line for connection is arranged on the upper surface by mounting the high-frequency element on the side on which the high-frequency element is mounted on the external substrate, the connection terminals between the high-frequency line for connection and the external substrate and the module In the structure, a high-frequency line for connection of another high-frequency element mounting substrate can be connected to a ribbon, a wire, or a tape with a metal layer such as a TAB (Tape Automated Bonding) tape, thereby facilitating alignment. And transmission loss at the time of connection can be reduced.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
An example of a mounting structure of a high-frequency element mounting board according to the present invention will be described with reference to FIGS. FIG. 1 is a schematic sectional view of a mounting structure according to the present invention, and FIG. 2 is a plan view thereof. According to FIGS. 1 and 2, the high-frequency element mounting substrate A has a high-frequency element 2 such as an MMIC or MIC mounted on a surface of a dielectric substrate 1 made of a dielectric material. A pair of first high-frequency lines 3 for inputting and outputting signals to and from the high-frequency element 2 are formed on the surface of the dielectric substrate 1.
[0018]
In the high-frequency element mounting substrate A shown in FIG. 1, a ground layer 4 is formed over substantially the entire surface of the dielectric substrate 1. The track is formed. One end of the first high-frequency line is formed by wire bonding, ribbon, tape with metal layer such as TAB (Tape Automated Bonding) tape (hereinafter simply referred to as TAB tape), flip chip mounting, or the like. Is electrically connected to
[0019]
Further, a frame 5 having a predetermined height is provided around the high-frequency element 2 and the first high-frequency line 3 of the dielectric substrate 1. The frame body 5 is a member that forms a cavity for hermetically sealing the high-frequency element 2 when mounted on an external substrate, which will be described later. The frame 5 is desirably made of a material that can prevent electromagnetic waves from leaking from the cavity to the outside. Metals, ceramics, ceramic-metal composite materials, glass ceramics, and the like can be used. It is also possible to disperse an electromagnetic wave absorbing substance such as carbon capable of absorbing electromagnetic waves, or to apply these electromagnetic wave absorbing substances to the surface. In particular, the frame 5 is most preferably made of metal. In this case, the metal frame is joined to the surface of the dielectric substrate 1 by the brazing material 6 or the like.
[0020]
A pair of second high-frequency lines 7 is formed on the surface of the dielectric substrate 1 opposite to the surface on which the high-frequency element 2 is mounted, and forms a microstrip line together with the ground layer 4.
[0021]
Further, a slot hole 8 in which no conductor layer is formed is formed in the ground layer 4. Each of the slot holes 8 has a substantially rectangular shape having a long side L and a short side M, or an elliptical diameter having a long diameter L and a short diameter M. The first high-frequency line 3 and the second high-frequency The lines 3 and 7 can be electromagnetically coupled by forming the respective end portions of the use line 7 in a position facing each other in contrast.
[0022]
As shown in FIG. 3, the electromagnetic coupling structure of the first high-frequency line 3 and the second high-frequency line 7 by the slot holes 8 is such that the long side length L of the slot holes 8 increases the signal transmission efficiency. At this point, it is desirable that the length of the short side of the slot hole 8 be equivalent to 1/2 of the wavelength λ of the transmission signal. It is desirable to set to the length.
[0023]
Then, the terminal ends of the first high-frequency line 3 and the second high-frequency line 7 project from the center of the slot hole 8 by a length X from the center of the slot hole 8 in a plan view. Will be arranged. The protrusion length X is desirably a length corresponding to about １ ／ of the wavelength λ of the transmission signal.
[0024]
On the bottom surface of the dielectric substrate 1 of the high-frequency element mounting board A according to the present invention, the end of the second high-frequency line 7 is connected to a grounded coplanar line having ground layers 9 formed on both sides thereof as shown in FIG. Are formed. This connection portion is for connecting the substrate A to a circuit on the external substrate. The ground layer 9 is electrically connected to the ground layer 4 in the dielectric substrate 1 by via hole conductors 10 or castellations (not shown) formed on the side surfaces of the dielectric substrate 1, and has the same potential as the ground layer 4. It is kept in.
[0025]
According to the mounting structure of the present invention, as shown in FIGS. 1 and 2, the frame 5 of the high frequency element mounting substrate A is bonded to the mounting portion of the external substrate B by soldering or AuSn. By bonding using the agent 11, the high-frequency element 2 is hermetically sealed in a cavity 12 formed by the dielectric substrate 1, the frame 5 and the external substrate B.
[0026]
According to such a sealing structure, it is desirable that the inside of the cavity 12 is formed of a structure that is also electromagnetically sealed. Therefore, the cavity 12 forming portion of the high-frequency element mounting substrate A mounting portion of the external substrate B Like the body 5, it is desirable to be made of a material such as a metal, a ceramic, a ceramic-metal composite material, or a glass ceramic, which can prevent the electromagnetic wave from leaking to the outside. It can also be applied to the inner wall.
[0027]
A connection terminal 15 composed of a third high-frequency line 13 and a pair of ground layers 14 is provided at a portion of the external substrate B facing the connection portion on the high-frequency element mounting board A, The second high-frequency line 7 of the substrate A, the third high-frequency line 13 of the connection terminal 15, and the pair of ground layers 9 and 14 are formed of a metal such as a ribbon, a wire, and a TAB tape. Each is electrically connected by a connection member 16 such as a layered tape.
[0028]
As described above, according to the present invention, the high-frequency element 2 is hermetically sealed by mounting on the external board, and the connection between the high-frequency element mounting board A and the external board B is made of an adhesive such as solder. By using a connecting member 16 such as a ribbon, a wire, a TAB tape or the like without using a connector, alignment between both connecting portions can be easily performed, and signal reflection at the connecting portion can be compared with mounting by soldering or the like. Loss can be reduced.
[0029]
Next, the high-frequency module structure of the present invention will be described with reference to the schematic sectional view of FIG. 4 and the plan view of FIG. According to the present invention, the high-frequency module structure basically has two or more high-frequency element mounting substrates A having the structure shown in FIGS. 1 to 3 mounted and arranged on the surface of the external substrate. , Interconnecting them.
[0030]
As shown in FIGS. 4 and 5, the two high-frequency element mounting boards A and A 'are positioned at positions where the connection portions of the second high-frequency lines 7, 7' on the external board B are close to each other. As described with reference to FIG. 2, the two substrates A and A ′ have their respective frame members 5 and 5 ′ joined to the external substrate B by solders or adhesives 11 and 11 ′ such as AuSn. 2, 2 'are hermetically sealed in cavities 12, 12' formed by the dielectric substrates 1, 1 ', the frame bodies 5, 5' and the external substrate B, respectively.
[0031]
The two high-frequency element mounting substrates A and A 'are formed by connecting the second high-frequency lines 7 and 7' to each other and a pair of ground layers 9 and 9 'to each other with a ribbon, wire, TAB tape, or the like. Each is electrically connected by the connection member 16.
[0032]
Also in such a module structure, each of the high-frequency element mounting boards A and A ′ has a structure in which the high-frequency element 2 is hermetically sealed by being mounted on an external board. By using a ribbon, wire, TAB tape, etc., without using an adhesive such as solder, the connection between the two can be easily aligned between the two connections, and the connection can be compared to mounting using solder, etc. Can be reduced.
[0033]
In the above-described high-frequency element mounting substrate A, a case has been described in which a pair of input and output high-frequency lines is formed. However, in the substrate A, three or more high-frequency lines are provided. A transmission line may be formed, and three or more electromagnetic coupling portions may be present.
[0034]
In the above-described high-frequency element mounting substrate A, only the signal transmission line has been described. However, this substrate A includes not only the signal transmission line but also another target line or power supply for the high-frequency element 2. And the like, a low-frequency wiring layer may be formed. In this case, the power supply wiring layer is also routed to the surface of the dielectric substrate 1 on which the second high-frequency line 7 is formed, and the power supply of the external substrate B is connected in the same manner as the connection of the second high-frequency line 7. What is necessary is just to connect to a circuit with a ribbon, a wire, TAB tape, etc.
[0035]
Furthermore, a microstrip line has been described as an example of the first high-frequency line and the second high-frequency line in the high-frequency element mounting board A. However, such a line is constituted by a strip line and a coplanar line with ground. Is also good.
[0036]
Further, in the mounting structure and the module structure of the present invention, the external board B may have functions of a mother board made of a printed board, a housing, a heat sink, and the like.
[0037]
【The invention's effect】
As described in detail above, in the mounting structure and module structure of the high-frequency element mounting board of the present invention, the signal transmission lines in the high-frequency element mounting board are electromagnetically coupled, and the hermetic sealing of the high-frequency element is fixed to the external circuit board. By performing bonding by connecting the body and connecting the connection part with the external substrate with a wire, ribbon, TAB tape, etc., alignment can be performed easily and characteristic deterioration due to mounting by conventional soldering can be reduced. It is possible to provide a highly reliable mounting structure and a module structure that can input and output to a high-frequency element and that can be easily mounted and modularized.
[Brief description of the drawings]
FIG. 1 is a schematic sectional view of a mounting structure of a high-frequency element mounting board according to the present invention.
FIG. 2 is a plan view of the mounting structure of FIG.
3A and 3B are a plan view and a cross-sectional view illustrating a structure of an electromagnetic coupling portion of the high-frequency element mounting board according to the present invention.
FIG. 4 is a schematic cross-sectional view of the module structure of the high-frequency element mounting board of the present invention.
FIG. 5 is a plan view of the module structure of FIG. 4;
FIG. 6 is a schematic cross-sectional view for explaining a mounting structure of a conventional high-frequency package.
[Explanation of symbols]
Reference Signs List A High-frequency element mounting substrate B External substrate 1 Dielectric substrate 2 High-frequency element 3 First high-frequency line 4 Ground layer 5 Frame 7 Second high-frequency line 8 Slot hole 12 Cavity 13 Connection terminal 16 Connection member

Claims (6)

誘電体基板と、該誘電体基板の一方の表面に搭載された高周波素子と、前記誘電体基板の一方の表面に被着形成され一端が前記高周波素子と接続された第１の高周波用線路と、前記高周波素子および前記第１の高周波用線路の周囲に設けられた枠体と、前記誘電体基板の他方の表面に形成された第２の高周波用線路とを具備し、前記第１の高周波用線路と前記第２の高周波用線路とを電磁的に結合してなる高周波素子搭載基板を、接続端子を具備する外部基板に実装する構造であって、前記高周波素子搭載基板の前記枠体を前記外部基板と接合することにより前記高周波素子を誘電体基板、枠体および外部基板によって形成されるキャビティ内に気密に封止するとともに、前記高周波素子搭載基板の前記第２の高周波用線路と前記接続端子とを接続してなることを特徴とする高周波素子搭載基板の実装構造。A dielectric substrate, a high-frequency element mounted on one surface of the dielectric substrate, a first high-frequency line formed on one surface of the dielectric substrate and connected at one end to the high-frequency element; A frame provided around the high-frequency element and the first high-frequency line, and a second high-frequency line formed on the other surface of the dielectric substrate. A high-frequency element mounting substrate formed by electromagnetically coupling a transmission line and the second high-frequency line to an external substrate having connection terminals, wherein the frame of the high-frequency element mounting substrate is The high-frequency element is hermetically sealed in a cavity formed by the dielectric substrate, the frame, and the external substrate by bonding to the external substrate, and the second high-frequency line of the high-frequency element mounting substrate is Connection terminal Mounting structure of the high-frequency element mounting substrate, characterized by comprising connecting. 前記高周波素子搭載基板における前記誘電体基板内部にグランド層が形成され、前記第１の高周波用線路と前記第２の高周波用線路とが、前記グランド層内に形成されたスロット孔を介して電磁的に結合してなる請求項１記載の高周波素子搭載基板の実装構造。A ground layer is formed inside the dielectric substrate in the high-frequency element mounting board, and the first high-frequency line and the second high-frequency line are electromagnetically connected to each other through a slot hole formed in the ground layer. 2. The mounting structure for a high-frequency element mounting board according to claim 1, wherein the mounting structure is formed by a combination. 前記第２の高周波用線路と、前記接続端子とを、ワイヤボンディング、リボン、金属層付きテープのうちのいずれかによって接続してなる請求項１または請求項２記載の高周波素子搭載基板の実装構造。3. The mounting structure for a high-frequency element mounting board according to claim 1, wherein the second high-frequency line and the connection terminal are connected by any one of wire bonding, ribbon, and tape with a metal layer. . 誘電体基板と、該誘電体基板の一方の表面に搭載された高周波素子と、前記誘電体基板の一方の表面に被着形成され一端が前記高周波素子と接続された第１の高周波用線路と、前記高周波素子および前記第１の高周波用線路の周囲に設けられた枠体と、前記誘電体基板の他方の表面に形成された第２の高周波用線路とを具備し、前記第１の高周波用線路と前記第２の高周波用線路とを電磁的に結合してなる複数の高周波素子搭載基板を外部基板の表面に実装配列してなる高周波用モジュール構造であって、
前記高周波素子搭載基板における前記枠体をそれぞれ前記外部基板と接合することにより前記高周波素子を誘電体基板、枠体および外部基板によって形成されるキャビティ内に気密に封止するとともに、前記複数の高周波素子搭載基板の各第２の高周波用線路同士を相互接続してなることを特徴とする高周波用モジュール構造。A dielectric substrate, a high-frequency element mounted on one surface of the dielectric substrate, a first high-frequency line formed on one surface of the dielectric substrate and connected at one end to the high-frequency element; A frame provided around the high-frequency element and the first high-frequency line, and a second high-frequency line formed on the other surface of the dielectric substrate. A high-frequency module structure in which a plurality of high-frequency element mounting substrates formed by electromagnetically coupling a transmission line and the second high-frequency line are mounted and arranged on a surface of an external substrate,
The frame in the high-frequency element mounting substrate is bonded to the external substrate to hermetically seal the high-frequency element in a cavity formed by the dielectric substrate, the frame, and the external substrate. A high-frequency module structure, wherein the second high-frequency lines of the element mounting board are interconnected. 前記高周波素子搭載基板における前記誘電体基板内部にグランド層が形成され、前記第１の高周波用線路と前記第２の高周波用線路とが、前記グランド層内に形成されたスロット孔を介して電磁的に結合してなる請求項４記載の高周波用モジュール構造。A ground layer is formed inside the dielectric substrate in the high-frequency element mounting board, and the first high-frequency line and the second high-frequency line are electromagnetically connected to each other through a slot hole formed in the ground layer. 5. The high-frequency module structure according to claim 4 , wherein the module structure is combined. 前記第２の高周波用線路同士を、ワイヤボンディング、リボン、および金属層付きテープのうちのいずれかによって相互接続してなる請求項４または請求項５記載の高周波用モジュール構造。The high-frequency module structure according to claim 4 or 5, wherein the second high-frequency lines are interconnected by any one of wire bonding, a ribbon, and a tape with a metal layer.
JP18394698A 1998-06-30 1998-06-30 Mounting structure of high-frequency element mounting board and high-frequency module structure Expired - Fee Related JP3556474B2 (en)

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